FDS6930B-SBNT001 [FAIRCHILD]
Transistor;
| 型号： | FDS6930B-SBNT001 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Transistor |
| 文件： | 总5页 (文件大小：532K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
June 2005
FDS6930B
Dual N-Channel Logic Level PowerTrench® MOSFET
Features
General Description
■ 5.5 A, 30 V.
R
R
= 38 mΩ @ V = 10 V
These N-Channel Logic Level MOSFETs are produced using
Fairchild Semiconductor’s advanced PowerTrench process that
has been especially tailored to minimize the on-state resistance
and yet maintain superior switching performance.
DS(ON)
DS(ON)
GS
= 50 mΩ @ V = 4.5 V
GS
■ Fast switching speed
■ Low gate charge
These devices are well suited for low voltage and battery pow-
ered applications where low in-line power loss and fast switch-
ing are required.
■ High performance trench technology for extremely
low R
DS(ON)
■ High power and current handling capability
D2
D2
5
6
7
8
4
3
2
1
D1
D1
G2
S2
SO-8
G1
S1
Pin 1
Absolute Maximum Ratings T = 25°C unless otherwise noted
A
Symbol
Parameter
Ratings
Units
V
Drain-Source Voltage
Gate-Source Voltage
30
V
V
A
DSS
V
20
GSS
I
Drain Current
– Continuous
– Pulsed
(Note 1a)
5.5
D
20
P
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1)
(Note 1a)
(Note 1b)
(Note 1c)
2
W
D
1.6
1
0.9
T , T
Operating and Storage Junction Temperature Range
–55 to 150
°C
J
STG
Thermal Characteristics
R
R
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
°C/W
°C/W
θJA
θJC
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6930B
FDS6930B
13"
12mm
2500 units
©2005 Fairchild Semiconductor Corporation
FDS6930B Rev. A
1
www.fairchildsemi.com
Electrical Characteristics T = 25°C unless otherwise noted
A
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BV
Drain–Source Breakdown Voltage
V
I
= 0 V, I = 250 µA
30
V
DSS
GS
D
∆BVDSS
∆T
Breakdown Voltage Temperature
Coefficient
= 250 µA, Referenced to 25°C
26
mV/°C
D
J
I
Zero Gate Voltage Drain Current
V
V
= 24 V, V = 0 V
1
10
µA
DSS
DS
GS
= 24 V, V = 0 V, T = 55°C
DS
GS
GS
J
I
Gate–Source Leakage
V
=
20 V, V = 0 V
100
3
nA
GSS
DS
On Characteristics (Note 2)
Gate Threshold Voltage
V
V
I
= V , I = 250 µA
1
1.9
V
GS(th)
DS
GS
D
∆VGS(th)
Gate Threshold Voltage
Temperature Coefficient
= 250 µA, Referenced to 25°C
–4.6
mV/°C
D
∆T
J
R
Static Drain–Source
On–Resistance
V
V
V
= 10 V, I = 5.5 A
31
40
45
38
50
62
mΩ
DS(on)
GS
D
= 4.5 V, I = 4.8 A
GS
GS
D
= 10 V, I = 5.5 A, T = 125°C
D
J
I
On–State Drain Current
V
= 10 V, V = 5 V
20
A
S
D(on)
GS
DS
DS
g
Forward Transconductance
V
= 5 V, I = 5.5 A
19
FS
D
Dynamic Characteristics
C
C
C
R
Input Capacitance
V
= 15 V, V = 0 V,
GS
310
90
412
120
60
pF
pF
pF
Ω
iss
oss
rss
G
DS
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
40
V
= 15 mV, f = 1.0 MHz
1.9
GS
Switching Characteristics (Note 2)
t
t
t
t
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
V
= 15 V, I = 1 A,
6
6
12
12
28
4
ns
ns
d(on)
DD
GS
D
= 10 V, R
= 6 Ω
GEN
r
16
2
ns
d(off)
f
ns
Q
Q
Q
V
V
= 5 V, I = 5.5 A,
2.7
1.0
0.7
3.8
nC
nC
nC
g
DS
GS
D
= 5 V
gs
gd
Drain–Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain–Source Diode Forward Current
I
1.3
1.2
32
A
V
S
V
Drain–Source Diode Forward Voltage
Diode Reverse Recovery Time (note3)
Diode Reverse Recovery Charge
V
= 0 V, I = 1.3 A (Note 2)
0.8
16
6
SD
GS
S
t
I = 5.5 A, d /d = 100 A/µs
nS
nC
rr
F
iF
t
Q
rr
Notes:
1.
R
R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
θJA
θJC
is guaranteed by design while R
is determined by the user's board design.
θCA
a) 78°C/W when mounted
on a 0.5 in pad of 2 oz
copper
b) 125°C/W when
mounted on a 0.02 in
pad of 2 oz copper
c) 135°C/W when
mounted on a
minimum pad.
2
2
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. Trr parameter will not be subjected to 100% production testing.
2
www.fairchildsemi.com
FDS6930B Rev. A
Typical Characteristics
20
2
1.8
1.6
1.4
1.2
1
VGS = 10V
4.0V
3.5V
16
VGS = 3.5V
4.5V
6.0V
12
8
4.0V
4.5V
5.0V
3.0V
6.0V
10.0V
4
0
0.8
0
0.5
1
1.5
2
0
4
8
12
16
20
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
1.4
1.2
1
0.12
0.1
ID = 5.5A
VGS = 10.0V
ID = 2.75A
0.08
0.06
0.04
0.02
TA = 125°C
0.8
0.6
TA = 25°C
-50
-25
0
25
50
75
100
125
150
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
20
16
12
8
100
10
VGS = 0V
VDS = 5V
TA = 125°C
1
25°C
0.1
-55°C
-55°C
TA = 125°C
0.01
0.001
0.0001
4
25°C
0
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
3
www.fairchildsemi.com
FDS6930B Rev. A
Typical Characteristics
500
400
300
200
100
0
10
f = 1 MHz
VGS = 0 V
ID = 5.5A
8
VDS = 5V
15V
6
4
2
0
Ciss
10V
Coss
Crss
0
1
2
3
4
5
6
0
5
10
15
20
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
50
40
30
20
10
0
100
SINGLE PULSE
θ
R JA = 135°C/W
100µs
TA = 25°C
RDS(ON) LIMIT
10
1
1ms
10ms
100ms
1s
10s
DC
VGS = 10.0V
SINGLE PULSE
RθJA = 135°C/W
0.1
0.01
TA = 25°C
0.001
0.01
0.1
1
10
100
0.01
0.1
1
10
100
t1, TIME (sec)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Single Pulse Maximum
Power Dissipation.
Figure 9. Maximum Safe Operating Area.
1
D = 0.5
R JA(t) = r(t) * R
θ θ
JA
0.2
R
θ
JA = 135°C/W
0.1
0.1
0.05
P(pk)
0.02
0.01
t1
t2
TJ - TA = P * R
Duty Cycle, D = t1 / t2
0.01
θ
JA(t)
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
4
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FDS6930B Rev. A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
®
ACEx™
PowerSaver™
SuperSOT™-8
SyncFET™
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ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
FAST
®
ActiveArray™
Bottomless™
Build it Now™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
PowerTrench
FASTr™
FPS™
FRFET™
GlobalOptoisolator™
GTO™
®
®
QFET
QS™
TINYOPTO™
TruTranslation™
UHC™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
μSerDes™
SILENT SWITCHER
SMART START™
SPM™
®
UltraFET
HiSeC™
I2C™
UniFET™
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MSXPro™
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ImpliedDisconnect™
IntelliMAX™
®
OCXPro™
OPTOLOGIC
®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerEdge™
FACT Quiet Series™
Stealth™
Across the board. Around the world.™
SuperFET™
SuperSOT™-3
SuperSOT™-6
®
The Power Franchise
Programmable Active Droop™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVESTHE RIGHTTO MAKE CHANGES WITHOUTFURTHER NOTICETOANY
PRODUCTS HEREINTO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOTASSUMEANYLIABILITY
ARISING OUTOFTHEAPPLICATION OR USE OFANYPRODUCTOR CIRCUITDESCRIBED HEREIN; NEITHER DOES IT
CONVEYANYLICENSE UNDER ITS PATENTRIGHTS, NORTHE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I16
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