FDS6961AZS62Z [FAIRCHILD]
Power Field-Effect Transistor, 3.5A I(D), 30V, 0.09ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8;
| 型号： | FDS6961AZS62Z |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Power Field-Effect Transistor, 3.5A I(D), 30V, 0.09ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总5页 (文件大小：64K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
September 2001
FDS6961AZ
Dual N-Channel Logic Level PowerTrenchÒ MOSFET
General Description
Features
These N-Channel Logic Level MOSFETs are produced
· 3.5 A, 30 V.
RDS(ON) = 90 mW @ VGS = 10 V
RDS(ON) = 140 mW @ VGS = 4.5 V
using
Fairchild
Semiconductor’s
advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
· Low gate charge (2.1 nC typical)
· ESD protection diode (note 3)
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
· High performance trench technology for extremely
low RDS(ON)
· High power and current handling capability
5
6
4
3
Q1
Q2
7
8
2
1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
30
V
VGSS
ID
Gate-Source Voltage
±20
V
A
Drain Current – Continuous
– Pulsed
(Note 1a)
3.5
14
PD
W
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
2
(Note 1a)
(Note 1b)
(Note 1c)
1.6
1
0.9
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
RqJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1)
78
40
°C/W
°C/W
RqJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
2500 units
FDS6961AZ
FDS6961AZ
13’’
12mm
Ó2001 Fairchild Semiconductor Corporation
FDS6961AZ Rev C (W)
Electrical Characteristics
TA= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage VGS = 0 V,
ID = 250 mA
30
V
Breakdown Voltage Temperature
Coefficient
24
DBVDSS
DTJ
ID = 250 mA, Referenced to 25°C
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 24 V,
VDS = 24 V, VGS = 0 V, TJ = 55°C
VGS = 0 V
1
10
mA
mA
mA
IGSSF
IGSSR
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
VGS = 20 V, VDS = 0 V
10
VGS = –20 V, VDS = 0 V
–10
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
VDS = VGS
,
ID = 250 mA
1
1.9
–4
3
V
DVGS(th)
DTJ
ID = 250 mA, Referenced to 25°C
mV/°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = 10 V,
VGS = 4.5 V, ID = 2.8 A
VGS = 10 V, ID = 3.5 A, TJ = 125°C
ID = 3.5 A
70
90
104
90
140
143
mW
ID(on)
gFS
On–State Drain Current
VGS = 10 V,
VDS = 5 V,
VDS = 5 V
ID = 3.5 A
14
A
S
Forward Transconductance
8
Dynamic Characteristics
C
Input Capacitance
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
216
48
pF
pF
pF
iss
Coss
Output Capacitance
C
rss
Reverse Transfer Capacitance
21
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
VDD = 15 V,
VGS = 10 V,
ID = 1 A,
6.5
5
13
10
19
4
ns
ns
RGEN = 6 W
9.5
2
ns
ns
Qg
VDS = 15 V,
VGS = 5 V
ID = 3.5 A,
2.1
0.9
0.7
3
nC
nC
nC
Qgs
Qgd
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
1.3
1.2
A
V
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = 1.3 A
(Note 2)
0.8
Notes:
1. RqJAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RqJCis guaranteed by design while RqCAis determined by the user's board design.
a) 78°C/W when
mounted on a 0.5in
pad of 2 oz copper
b) 125°C/W when
mounted on a 0.02
in2 pad of 2 oz
copper
c) 135°C/W when mounted on a
minimum pad.
2
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300ms, Duty Cycle < 2.0%
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied
FDS6961AZ Rev C (W)
Typical Characteristics
14
2
1.8
1.6
1.4
1.2
1
VGS = 10V
6.0V
4.5V
VGS = 3.5V
12
10
8
4.0V
4.0V
3.5V
4.5V
6
5.0V
6.0V
4
10V
3.0V
2
0
0.8
0
1
2
3
4
5
0
2
4
6
8
10
12
14
VDS , DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.8
1.6
1.4
1.2
1
0.23
ID = 1.8A
ID = 3.5A
VGS = 10V
0.2
0.17
0.14
0.11
0.08
0.05
TA = 125oC
0.8
0.6
TA = 25oC
-50
-25
0
25
50
75
100
125
150
175
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
12
100
25oC
TA = -55oC
VDS = 5V
VGS = 0V
10
8
10
1
125oC
TA = 125oC
6
0.1
25oC
4
0.01
0.001
0.0001
-55oC
2
0
1.5
2
2.5
3
3.5
4
4.5
5
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6961AZ Rev C (W)
Typical Characteristics (continued)
10
300
250
200
150
100
50
ID = 3.5 A
VDS = 10V
15V
f = 1 MHz
VGS = 0 V
8
CISS
20V
6
4
2
0
COSS
CRSS
0
0
1
2
3
4
0
5
10
15
20
Qg, GATE CHARGE (nC)
VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
50
40
30
20
10
0
SINGLE PULSE
RqJA = 135°C/W
100ms
TA = 25°C
RDS(ON) LIMIT
10
1
1ms
10ms
100ms
1s
10s
DC
VGS = 10V
SINGLE PULSE
0.1
0.01
R
qJA = 135oC/W
TA = 25oC
0.001
0.01
0.1
1
10
100
0.1
1
10
100
t1, TIME (sec)
VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RqJA(t) = r(t) + RqJA
0.2
RqJA = 135oC/W
0.1
0.1
0.05
P(pk)
0.02
0.01
t1
0.01
t2
TJ - TA = P * R JA(t)
q
Duty Cycle, D = t1/ t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6961AZ Rev C (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
â
SMART START™
STAR*POWER™
Stealth™
VCX™
FAST
ACEx™
Bottomless™
CoolFET™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
FASTr™
FRFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
CROSSVOLT™
DenseTrench™
DOME™
POP™
Power247™
PowerTrenchâ
QFET™
EcoSPARK™
E2CMOSTM
TinyLogic™
QS™
EnSignaTM
TruTranslation™
UHC™
QT Optoelectronics™
Quiet Series™
SILENTSWITCHERâ
FACT™
FACT Quiet Series™
UltraFETâ
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITYARISING OUT OF THE APPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICESORSYSTEMSWITHOUTTHEEXPRESSWRITTENAPPROVALOFFAIRCHILDSEMICONDUCTORCORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
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