FDS6982AS [ONSEMI]
双笔记本电源，N 沟道，PowerTrench® SyncFET™，30V;
| 型号： | FDS6982AS |
| 厂家： | 
ONSEMI |
| 描述： | 双笔记本电源，N 沟道，PowerTrench® SyncFET™，30V 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总11页 (文件大小：605K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ON Semiconductor
Is Now
To learn more about onsemi™, please visit our website at
www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDS6982AS
Dual Notebook Power Supply N-Channel PowerTrench® SyncFET™
General Description
Features
•
Q2:
Optimized to minimize conduction losses
Includes SyncFET Schottky body diode
The FDS6982AS is designed to replace two single SO-
8
MOSFETs and Schottky diode in synchronous
8.6A, 30V
R
DS(on) max= 13.5mΩ @ VGS = 10V
DS(on) max= 16.5mΩ @ VGS = 4.5V
DC:DC power supplies that provide various peripheral
voltages for notebook computers and other battery
powered electronic devices. FDS6982AS contains two
unique 30V, N-channel, logic level, PowerTrench
MOSFETs designed to maximize power conversion
efficiency. The high-side switch (Q1) is designed with
specific emphasis on reducing switching losses while
the low-side switch (Q2) is optimized to reduce
conduction losses. Q2 also includes an integrated
R
•
•
Low gate charge (21nC typical)
Q1:
Optimized for low switching losses
6.3A, 30V
R
DS(on) max= 28.0mΩ @ VGS = 10V
DS(on) max= 35.0mΩ @ VGS = 4.5V
Schottky
diode
using
ON
Semiconductor’s
R
monolithic SyncFET technology.
Applications
•
Low gate charge (11nC typical)
• Notebook
D1
D1
5
4
3
2
1
D2
Q1
6
D2
7
Q2
8
G1
S1
SO-8
G2
S2
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
Q2
Q1
Units
VDSS
VGSS
ID
Drain-Source Voltage
30
±20
8.6
30
30
±20
6.3
20
V
V
A
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
(Note 1a)
PD
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
2
W
(Note 1a)
(Note 1b)
1.6
1
0.9
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
RθJA
RθJC
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
12mm
Quantity
2500 units
FDS6982AS
FDS6982AS
13”
Publication Order Number:
FDS6982AS/D
©2008 Semiconductor Components Industries, LLC.
October-2017, Rev. 2
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown
VGS = 0 V,
VGS = 0 V,
ID = 1 mA, Referenced to 25°C
ID = 250 µA, Referenced to 25°C
ID = 1 mA
ID = 250 uA
Q2
Q1
Q2
Q1
30
30
V
Voltage
Breakdown Voltage
Temperature Coefficient
28
24
∆BVDSS
∆TJ
mV/°C
IDSS
Zero Gate Voltage Drain
Current
Gate-Body Leakage
VDS = 24 V,
VGS = 0 V
Q2
Q1
Q2
Q1
500
1
±100
µA
IGSS
nA
V
GS = ±20 V, VDS = 0 V
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS
,
ID = 1 mA
ID = 250 µA
Q2
Q1
1
1
1.4
1.9
3
3
V
V
DS = VGS
,
Gate Threshold Voltage
Temperature Coefficient
∆VGS(th)
∆TJ
Q2
–3.1
–4.3
mV/°C
ID = 1 mA, Referenced to 25°C
ID = 250 uA, Referenced to 25°C
Q1
Q2
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 8.6 A
VGS = 10 V, ID = 8.6 A, TJ = 125°C
11
16
13
20
26
25
13.5
20.0
16.5
28
33
35
mΩ
V
V
GS = 4.5 V, ID = 7.5 A
GS = 10 V, ID = 6.3 A
Q1
VGS = 10 V, ID = 6.3 A, TJ = 125°C
VGS = 4.5 V, ID = 5.6 A
A
S
ID(on)
gFS
On-State Drain Current
VGS = 10 V,
VDS = 5 V
Q2
Q1
30
20
32
19
Forward Transconductance
VDS = 5 V,
VDS = 5 V,
ID = 8.6 A
ID = 6.3 A
Q2
Q1
Dynamic Characteristics
Ciss
Coss
Crss
RG
Input Capacitance
V
DS = 10 V,
VGS = 0 V,
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
1250
610
410
180
130
85
pF
pF
pF
Ω
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS = 15mV, f = 1.0 MHz
1.4
2.2
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 15 V, ID = 1 A,
VGS = 10V, RGEN = 6 Ω
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
9
10
6
7
18
20
12
14
44
39
20
6
22
22
23
25
34
27
20
10
ns
ns
ns
ns
ns
ns
ns
ns
27
24
11
3
12
12
13
14
19
15
10
5
V
DD = 15 V, ID = 1 A,
VGS = 4.5V, RGEN = 6 Ω
www.onsemi.com
2
Electrical Characteristics (continued)
TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions
Type Min Typ Max Units
Switching Characteristics (Note 2)
Q2:
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
21
11
12
6
3.1
1.8
3.6
2.4
30
15
16
9
nC
nC
nC
nC
Qg
(TOT)
Total Gate Charge at Vgs=10V
Total Gate Charge at Vgs=5V
Gate–Source Charge
V
DS = 15 V, ID = 11.5A
Q1:
Qg
V
DS = 15 V, ID = 6.3A
Qgs
Qgd
Gate–Drain Charge
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
Q2
Q1
Q2
3.0
1.3
A
ns
Trr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
IF = 11.5 A,
diF/dt = 300 A/µs
19
12
20
9
(Note 3)
(Note 3)
Qrr
Trr
nC
ns
Q1
IF = 6.3 A,
diF/dt = 100 A/µs
Qrr
VSD
nC
V
0.5
0.6
0.8
Drain-Source Diode Forward VGS = 0 V, IS = 3 A
(Note 2)
Q2
Q2
Q1
0.7
1.0
1.2
Voltage
VGS = 0 V, IS = 6 A
VGS = 0 V, IS = 1.3 A
(Note 2)
(Note 2)
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a)
78°C/W when
mounted on a
0.5in2 pad of 2
oz copper
b)
125°C/W when
mounted on a
0.02 in2 pad of
2 oz copper
c)
135°C/W when
mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. See “SyncFET Schottky body diode characteristics” below.
www.onsemi.com
3
Typical Characteristics: Q2
30
2.6
2.4
2.2
2
3.0V
VGS = 2.5V
VGS = 10V
4.5V
3.5V
20
10
0
1.8
1.6
1.4
1.2
1
3.0V
2.5V
3.5V
4.0V
4.5V
6.0V
10V
0.8
0
0.5
1
1.5
2
0
10
20
30
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.4
1.2
1
0.05
0.04
0.03
0.02
0.01
0
ID = 8.6A
GS = 10V
ID = 4.3 A
V
TA = 125oC
0.8
0.6
TA = 25oC
-50
-25
0
25
50
75
100
125
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
30
25
20
15
10
5
10
1
VDS = 5V
VGS = 0V
TA = 125oC
25oC
TA = 125oC
-55oC
0.1
0.01
-55oC
25oC
0
1
1.5
2
2.5
3
3.5
0
0.2
0.4
0.6
0.8
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
www.onsemi.com
4
Typical Characteristics: Q2
10
2000
1600
1200
800
400
0
f = 1MHz
GS = 0 V
ID = 8.6A
V
8
VDS = 10V
20V
6
Ciss
15V
4
Coss
2
0
Crss
0
5
10
15
20
25
0
5
10
15
20
25
30
Qg, GATE CHARGE (nC)
V
DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
50
40
30
20
10
0
RDS(ON) LIMIT
SINGLE PULSE
RθJA = 135°C/W
TA = 25°C
100 s
µ
1ms
10ms
10
1
100ms
1s
10s
DC
VGS = 10V
SINGLE PULSE
RθJA = 135oC/W
TA = 25oC
0.1
0.01
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) * Rθ
JA
0.2
RθJA = 135°C/W
0.1
0.1
0.05
P(pk)
0.02
t1
0.01
t2
0.01
SINGLE PULSE
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
www.onsemi.com
5
Typical Characteristics Q1
20
2.6
2.2
1.8
1.4
1
VGS = 10V
6.0V
4.0V
3.5V
VGS = 3.0V
16
12
8
4.5V
3.5V
4.0V
4.5V
3.0V
6.0V
10V
4
0.6
0
0
5
10
ID, DRAIN CURRENT (A)
15
20
0
1
2
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. On-Region Characteristics.
Figure 13. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
0.1
ID = 6.3A
VGS = 10V
ID = 3.15 A
0.08
0.06
0.04
0.02
0
1.4
1.2
1
TA = 125oC
TA = 25oC
0.8
0.6
2
4
6
8
10
-50
-25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 14. On-Resistance Variation with
Temperature.
Figure 15. On-Resistance Variation with
Gate-to-Source Voltage.
20
100
VGS = 0V
VDS = 5V
10
1
15
10
5
TA = 125oC
25oC
0.1
TA = 125oC
-55oC
-55oC
0.01
0.001
0.0001
25oC
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1
1.5
2
2.5
3
3.5
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 16. Transfer Characteristics.
Figure 17. Body Diode Forward Voltage Variation
with Source Current and Temperature.
www.onsemi.com
6
Typical Characteristics Q1
800
600
400
200
0
10
f = 1MHz
VGS = 0 V
ID = 6.3A
8
VDS = 10V
Ciss
6
4
2
0
20V
15V
Coss
Crss
0
5
10
15
20
0
3
6
9
12
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 18. Gate Charge Characteristics.
Figure 19. Capacitance Characteristics.
100
50
40
30
20
10
0
SINGLE PULSE
RθJA = 135°C/W
TA = 25°C
RDS(ON) LIMIT
100 s
µ
10
1
1ms
10ms
100ms
1s
10s
DC
VGS = 10V
SINGLE PULSE
RθJA = 135oC/W
0.1
0.01
T
A = 25oC
0.1
1
10
100
0.001
0.01
0.1
1
10
100
1000
VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 20. Maximum Safe Operating Area.
Figure 21. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) * RθJA
RθJA = 135°C/W
0.2
0.1
0.1
0.05
0.02
P(pk)
t1
0.01
t2
0.01
SINGLE PULSE
T
J - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
10
100 1000
t1, TIME (sec)
Figure 22. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
www.onsemi.com
7
Typical Characteristics (continued)
SyncFET Schottky Body Diode
Characteristics
ON Semiconductor’s SyncFET process embeds
Schottky diode in parallel with PowerTrench
MOSFET. This diode exhibits similar
a
Schottky barrier diodes exhibit significant leakage at
high temperature and high reverse voltage. This will
increase the power in the device.
characteristics to a discrete external Schottky diode
in parallel with a MOSFET. Figure 23 shows the
0.1
reverse
FDS6982AS.
recovery
characteristic
of
the
TA = 125oC
0.01
0.001
TA = 100oC
0.0001
0.00001
TA = 25oC
0.000001
0
5
10
15
20
25
30
VDS, REVERSE VOLTAGE (V)
Figure 25. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature
Time: 10nS/DIV
Figure 23. FDS6982AS SyncFET body
diode reverse recovery characteristic.
For comparison purposes, Figure 24 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDS6982).
Time: 10nS/DIV
Figure 24. Non-SyncFET (FDS6982) body
diode reverse recovery characteristic.
www.onsemi.com
8
Typical Characteristics
L
VDS
BVDSS
tP
VGS
RGE
VDS
VDD
+
-
IAS
DUT
VDD
0V
VGS
vary tP to obtain
required peak IAS
tp
IAS
0.01Ω
tAV
Figure 26. Unclamped Inductive Load Test
Figure 27. Unclamped Inductive
Waveforms
Circuit
Drain Current
Same type as
+
50kΩ
10V
10µF
-
1µF
+
VDD
QG(TOT)
-
VGS
10V
VGS
DUT
QGD
QGS
Ig(REF
Charge, (nC)
Figure 28. Gate Charge Test Circuit
Figure 29. Gate Charge Waveform
tON
td(ON)
tOFF
td(OFF
RL
tf
VDS
tr
VDS
)
90%
90%
+
-
VGS
RGEN
10%
10%
0V
DUT
VDD
90%
50%
VGS
50%
VGS
Pulse Width ≤ 1µs
Duty Cycle ≤ 0.1%
10%
0V
Pulse Width
Figure 30. Switching Time Test
Circuit
Figure 31. Switching Time Waveforms
www.onsemi.com
9
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
© Semiconductor Components Industries, LLC
www.onsemi.com
❖
相关型号：
FDS6982F011
Power Field-Effect Transistor, 8.6A I(D), 30V, 0.028ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
FAIRCHILD
FDS6982L86Z
Power Field-Effect Transistor, 6.3A I(D), 30V, 0.028ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
FAIRCHILD
FDS6982S62Z
Power Field-Effect Transistor, 6.3A I(D), 30V, 0.028ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
FAIRCHILD
FDS6982SD84Z
Power Field-Effect Transistor, 6.3A I(D), 30V, 0.028ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
FAIRCHILD
FDS6982SF011
Power Field-Effect Transistor, 8.6A I(D), 30V, 0.028ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
FAIRCHILD
FDS6982SL86Z
Power Field-Effect Transistor, 6.3A I(D), 30V, 0.028ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明