FDS6570A [ONSEMI]
单 N 沟道,2.5V 指定,PowerTrench® MOSFET,20V,15A,7.5mΩ;型号: | FDS6570A |
厂家: | ONSEMI |
描述: | 单 N 沟道,2.5V 指定,PowerTrench® MOSFET,20V,15A,7.5mΩ |
文件: | 总6页 (文件大小:255K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
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regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDS6570A
Single N-Channel 2.5V Specified PowerTrench MOSFET
General Description
Features
This N-Channel 2.5V specified MOSFET is produced
• 15 A, 20 V. RDS(on) = 0.0075 Ω @ VGS = 4.5 V
RDS(on) = 0.010 Ω @ VGS = 2.5 V.
using
ON
Semiconductor's
advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain superior
switching performance.
• Low gate charge (47nC typical).
• Fast switching speed.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
• High performance trench technology for extremely
low RDS(ON)
.
Applications
• DC/DC converter
• Load switch
• High power and current handling capability.
• Battery protection
D
D
D
5
6
7
8
4
3
2
1
D
G
S
S
SO-8
S
TA = 25°C unless otherwise noted
Absolute Maximum Ratings
Symbol
Parameter
FDS6570A
Units
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
20
V
V
A
8
±
(Note 1a)
(Note 1a)
15
50
PD
Power Dissipation for Single Operation
2.5
W
(Note 1b)
(Note 1c)
1.2
1
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
C
°
Thermal Characteristics
θ
(Note 1a)
(Note 1)
R
R
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
50
25
C/W
C/W
JA
°
°
JC
θ
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
Tape Width
Quantity
FDS6570A
FDS6570A
13’’
12mm
2500 units
2000 Semiconductor Components Industries, LLC.
October-2017, Rev. 3
Publication Order Number:
FDS6570A/D
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
20
V
µ
A
VGS = 0 V, ID = 250
Breakdown Voltage Temperature
Coefficient
29
∆
DSS
µ
°
°
mV/ C
BV
∆
ID = 250 A, Referenced to 25 C
TJ
IDSS
IGSSF
IGSSR
Zero Gate Voltage Drain Current
VDS = 16 V, VGS = 0 V
1
µ
A
Gate-Body Leakage Current, Forward VGS = 8 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = -8 V, VDS = 0 V
100
-100
nA
nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
0.4
25
0.9
-4
1.5
V
µ
VDS = VGS, ID = 250
A
Gate Threshold Voltage
Temperature Coefficient
∆
µ
°
°
VGS(th)
ID = 250 A, Referenced to 25 C
mV/ C
∆
TJ
RDS(on)
Static Drain-Source
On-Resistance
VGS = 4.5 V, ID =15 A
GS = 4.5 V, ID =15 A,
TJ=125 C
GS = 2.5 V, ID =12 A
VGS = 4.5 V, VDS = 5.0 V
0.006 0.0075
0.009 0.0130
0.008 0.0100
Ω
V
°
V
ID(on)
gFS
On-State Drain Current
A
S
Forward Transconductance
VDS = 5 V, ID = 15 A
70
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
VDS = 10 V, VGS = 0 V,
f = 1.0 MHz
4700
850
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
310
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 10 V, ID = 1 A,
VGS = 4.5 V, RGEN = 6
20
27
95
35
47
7
32
44
ns
ns
Ω
133
56
ns
ns
Qg
VDS = 10 V, ID = 15 A,
66
nC
nC
nC
V
GS = 5 V,
Qgs
Qgd
10.5
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
2.1
1.2
A
V
(Note 2)
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.1 A
0.65
Notes:
1.
RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. RθJC is guaranteed by design while RθJA is determined by the user's board design.
c) 125° C/W when
a) 50° C/W when
b) 105° C/W when
mounted on a 0.003 in2
pad of 2 oz. copper.
mounted on a 0.5 in2
pad of 2 oz. copper.
mounted on a 0.02 in2
pad of 2 oz. copper.
Scale
1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
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2
Typical Characteristics
50
2.5
2
VGS= 4.5V
2.5V
40
30
20
10
0
2.0V
3.0V
VGS= 2.0V
1.5
1
2.5V
3.0V
4.5V
40
1.5V
0.5
0
0.4
0.8
1.2
1.6
2
0
10
20
30
50
V
DS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
0.03
0.024
0.018
0.012
0.006
0
1.6
ID= 15A
ID= 7.0A
VGS= 4.5V
1.4
1.2
1
TJ= 125oC
25oC
0.8
0.6
-50
-25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (oC)
1
1.5
2
2.5
3
3.5
4
4.5
5
V
GS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
100
50
40
30
20
10
0
VGS= 0
TJ= -55oC
VDS= 5V
25oC
10
1
125oC
TJ=125oC
25oC
125oC
0.1
0.01
0.001
0
0.2
0.4
0.6
0.8
1
1.2
0.5
1
1.5
2
2.5
VSD, BODY DIODE VOLTAGE (V)
V
GS, GATE TO SOURCE VOLTAGE (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
Figure 5. Transfer Characteristics.
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3
Typical Characteristics (continued)
5
7000
6000
5000
4000
3000
2000
1000
0
ID= 13A
4
VDS= 5V
Ciss
10V
3
15V
2
1
0
Coss
Crss
0
4
8
12
16
20
0
10
20
30
40
50
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
10
50
40
30
20
10
0
RDS(ON) Limit
100 s
µ
SINGLE PULSE
RθJA=125oC/W
TA=25oC
1ms
10ms
100ms
1s
10s
1
DC
VGS= 4.5V
0.1
SINGLE
PULSE
RθJA= 125oC/W
0.01
0.01
0.1
1
10
100
0.001
0.01
0.1
1
10
100
1000
VDS, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.5
R
(t) = r(t) * R
JA
θ
0.2
0.2
JA
θ
R
= 125°C/W
JA
θ
0.1
0.1
0.05
0.05
P(pk)
0.02
0.02
0.01
t
1
t
2
0.01
Single Pulse
T
- T = P * R
(t)
JA
0.005
J
A
θ
Duty Cycle, D = t /t
1
2
0.002
0.001
0.0001
0.001
0.01
0.1
, TIME (sec)
1
10
100
300
t
1
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
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4
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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