FDS6574A [ONSEMI]
N 沟道，PowerTrench® MOSFET，20V，16A，6mΩ;
| 型号： | FDS6574A |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® MOSFET，20V，16A，6mΩ 开关 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：323K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET – N-Channel,
POWERTRENCH)
20 V
FDS6574A
General Description
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This N−Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM controllers. It has been
V
DSS
R
MAX
I MAX
D
DS(on)
optimized for low gate charge, low R
and fast switching speed.
DS(ON)
20 V
6 mW @ 4.5 V
7 mW @ 2.5 V
9 mW @ 1.8 V
16 A
Features
• 16 A, 20 V
♦ R
♦ R
♦ R
= 6 mW @ V = 4.5 V
GS
DS(ON)
DS(ON)
DS(ON)
= 7 mW @ V = 2.5 V
GS
D
D
= 9 mW @ V = 1.8 V
GS
D
• Low Gate Charge
D
• High Performance Trench Technology for Extremely Low R
• High Power and Current Handling Capability
DS(ON)
G
S
S
S
• This Device is Pb−Free and are RoHS Compliant
SOIC8
CASE 751EB
Applications
• DC/DC Converter
MARKING DIAGRAM
FDS6574A
ALYW
FDS6574A = Specific Device Code
A
= Assembly Site
L
YW
= Wafer Lot Number
= Assembly Start Week
PIN CONNECTIONS
5
4
3
6
7
8
2
1
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of
this data sheet.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
April, 2021 − Rev. 2
FDS6574A/D
FDS6574A
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Ratings
Unit
V
V
Drain−Source Voltage
Gate−Source Voltage
Drain Current
20
DSS
GSS
V
8
V
I
D
Continuous (Note 1a)
16
A
Pulsed
80
2.5
P
D
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
W
1.2
1.0
T , T
Operating and Storage Junction Temperature Range
−55 to +175
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
Thermal Resistance, Junction−to−Ambient (Note 1a)
Thermal Resistance, Junction−to−Case (Note 1)
Ratings
50
Unit
°C/W
°C/W
R
q
JA
R
25
q
JC
1. R
is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder
q
JA
mounting surface of the drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
q
q
JC
CA
a. 50°C/W when
mounted on a 1 in
pad of 2 oz copper
b. 105°C/W when
mounted on a 0.04 in
pad of 2 oz copper
c. 125°C/W when mounted
on a minimum pad.
2
2
Scale 1:1 on letter size paper
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2
FDS6574A
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain–Source Breakdown Voltage
V
I
= 0 V, I = 250 mA
20
−
−
−
V
DSS
GS
D
Breakdown Voltage Temperature
Coefficient
= 250 mA, Referenced to 25°C
−
10
mV/°C
DBVDSS
DTJ
D
I
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
V
DS
V
GS
V
GS
= 16 V, V = 0 V
−
−
−
−
−
−
1
mA
nA
nA
DSS
GS
I
= 8 V, V = 0 V
100
–100
GSSF
GSSR
DS
I
= –8 V, V = 0 V
DS
ON CHARACTERISTICS (Note 2)
V
Gate Threshold Voltage
V
I
= V , I = 250 mA
0.4
0.6
1.5
V
GS(th)
DS
GS D
Gate Threshold Voltage Temperature
Coefficient
= 250 mA, Referenced to 25°C
−
–2.7
−
mV/°C
DVGS(th)
DTJ
D
R
Static Drain–Source On–Resistance
V
GS
V
GS
V
GS
V
GS
V
GS
V
DS
= 4.5 V, I = 16 A
−
−
4
4.4
5
6
7
9
9
−
−
mW
DS(on)
D
= 2.5 V, I = 15 A
D
= 1.8 V, I = 13 A
−
D
= 4.5 V, I = 16 A, T = 125_C
−
5.3
−
D
J
I
On–State Drain Current
= 4.5 V, V = 5 V
40
−
A
S
D(on)
DS
g
FS
Forward Transconductance
= 5 V, I = 16 A
115
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= 10V, V = 0 V, f = 1.0 MHz
−
−
−
7657
1432
775
−
−
−
pF
pF
pF
iss
GS
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
rss
SWITCHING CHARACTERISTICS (Note 2)
t
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
= 10 V, I = 1 A, V = 4.5 V,
GEN
−
−
−
−
−
−
−
19.5
22
35
36
ns
ns
d(on)
DD
D
GS
R
= 6 W
t
r
t
173
82
277
131
105
−
ns
d(off)
t
f
ns
Q
V
DS
= 10 V, I = 16 A, V = 4.5 V
75
nC
nC
nC
g
D
GS
Q
9
gs
gd
Q
17
−
DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward Voltage = 0 V, I = 2.1 A (Note 2)
I
−
−
−
2.1
1.2
A
V
S
V
SD
V
GS
0.56
S
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0 %.
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3
FDS6574A
TYPICAL CHARACTERISTICS
100
80
60
40
20
0
2
1.8
1.6
V
= 4.5 V
GS
2.5 V
1.8 V
3.5 V
V
GS
= 1.5 V
1.8 V
1.5 V
1.4
1.2
1
3.0 V
3.5 V
2.5 V
40
4.5 V
0.8
0
0.5
1
1.5
2
0
20
60
80
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 1. On−Region Characteristics
Figure 2. On−Resistance Variation with
Drain Current and Gate Voltage
0.012
0.01
1.6
1.4
1.2
1
I
V
= 16 A
I = 8 A
D
D
= 4.5 V
GS
0.008
0.006
0.004
0.002
T = 125°C
A
T = 25°C
A
0.8
0.6
1
2
3
4
5
−50 −25
0
25 50 75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On−Resistance Variation with Temperature
Figure 4. On−Resistance Variation with
Gate−to−Source Voltage
90
100
10
T = −55°C
A
V
DS
= 5 V
V
= 0 V
GS
25°C
125°C
75
60
45
30
15
0
1
T = 125°C
A
0.1
25°C
0.01
0.001
0.0001
−55°C
0.5
0.8
1.1
1.4
1.7
2
0
0.2
0.4
0.6
0.8
1
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Body Diode
Forward Voltage vs. Source Current
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4
FDS6574A
TYPICAL CHARACTERISTICS (continued)
5
4
3
2
1
0
10000
I
D
= 16 A
f = 1 MHz
V = 0 V
GS
V
DS
= 5 V
10 V
8000
C
ISS
15 V
6000
4000
C
OSS
2000
0
C
RSS
0
15
30
45
60
75
90
0
5
10
15
20
Q , GATE CHARGE (nC)
g
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
50
1000
100
10
SINGLE PULSE
= 125°C/W
T = 25°C
A
R
q
JA
100 ms
40
30
20
10
0
R
LIMIT
DS(ON)
1 ms
10 ms
100 ms
1 s
10 s
1
DC
V
= 4.5 V
GS
SINGLE PULSE
= 125°C/W
0.1
R
q
JA
T = 25°C
A
0.01
0.01
1
10
100
0.001
0.01
0.1
1
10
100
0.1
t, PULSE WIDTH (s)
V
DS
, DRAIN−SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum Power Dissipation
1
D = 0.5
0.2
0.1
R
R
(t) = r(t) * R
q
JA
= 125°C/W
q
q
JA
JA
0.1
0.05
0.02
0.01
P(pk)
t
t
1
0.01
2
T − T = P * R (t)
q
JA
J
A
SINGLE PULSE
Duty Cycle, D = t / t
1
2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, TIME (s)
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
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5
FDS6574A
PACKAGE MARKING AND ORDERING INFORMATION
†
Device Marking
Device
Package Type
Reel Size
Tape Width
Shipping
FDS6574A
FDS6574A
SOIC8
CASE 751EB
(Pb−Free)
13”
12 mm
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other
countries.
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOIC8
CASE 751EB
ISSUE A
DATE 24 AUG 2017
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Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13735G
SOIC8
PAGE 1 OF 1
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