FDPC8014AS [ONSEMI]
25V，不对称双 N 沟道，PowerTrench® Power Clip MOSFET;
| 型号： | FDPC8014AS |
| 厂家： | 
ONSEMI |
| 描述： | 25V，不对称双 N 沟道，PowerTrench® Power Clip MOSFET |
| 文件： | 总12页 (文件大小：552K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET – Dual, N-Channel,
POWERTRENCH), Power
Clip, Asymmetric
25 V
FDPC8014AS
General Description
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This device includes two specialized N−Channel MOSFETs in a
dual package. The switch node has been internally connected to enable
easy placement and routing of synchronous buck converters. The
control MOSFET (Q1) and synchronous SyncFETt (Q2) have been
designed to provide optimal power efficiency.
PIN1
PIN1
Features
• Q1: N−Channel
Top
Bottom
♦ Max r
♦ Max r
= 3.8 mW at V = 10 V, I = 20 A
GS D
DS(on)
Power Clip 5x6
PDFN8 5x6, 1.27P,
CASE 483AR
= 4.7 mW at V = 4.5 V, I = 18 A
DS(on)
GS
D
• Q2: N−Channel
♦ Max r
♦ Max r
= 1.0 mW at V = 10 V, I = 40 A
GS D
DS(on)
= 1.2 mW at V = 4.5 V, I = 37 A
DS(on)
GS
D
MARKING DIAGRAM
• Low Inductance Packaging Shortens Rise/Fall Times, Resulting in
Lower Switching Losses
• MOSFET Integration Enables Optimum Layout for Lower Circuit
Inductance and Reduced Switch Node Ringing
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
$Y&Z&3&K
FDPC
8014AS
FDPC8014AS = Specific Device Code
Applications
• Computing
• Communications
• General Purpose Point of Load
$Y
&Z
&3
&K
= ON semiconductor Logo
= Assembly Plant Code
= 3−Digit Date Code
= 2−Digits Lot Run Traceability Code
PAD9
PIN DESCRIPTION
V+(HSD)
Pin
1
Name
HSG
GR
Description
HSG
LSG
SW
High Side Gate
Gate Return
GR
PAD10
GND(LSS)
2
V+
V+
SW
SW
3, 4, 9
5, 6, 7
8
V+ (HSD) High Side Drain
SW
Switching Node, Low Side Drain
Low Side Gate
LSG
HSG
GR
V+
LSG
SW
SW
SW
10
GND (LSS) Low Side Source
V+
N−Channel MOSFET
ORDERING INFORMATION
See detailed ordering and shipping information on page 10 of
this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
December, 2020 − Rev. 2
FDPC8014AS/D
FDPC8014AS
MOSFET MAXIMUM RATINGS (T = 25°C, unless otherwise noted)
A
Symbol
Parameter
Q1
Q2
Unit
V
V
DS
V
GS
Drain to Source Voltage
Gate to Source Voltage
25 (Note 4)
25
12
12
V
I
Drain Current
−Continuous
−Continuous
−Continuous
−Pulsed
T
T
= 25°C (Note 5)
= 100°C (Note 5)
59
159
A
D
C
37
20 (Note 1a)
266
100
C
T = 25°C
A
40 (Note 1b)
1116
(Note 3)
(Note 2)
E
AS
Single Pulse Avalanche Energy
73
294
mJ
W
P
Power Dissipation for Single Operation
Power Dissipation for Single Operation
T
C
= 25°C
21
37
D
T = 25°C
A
2.1 (Note 1a)
2.3 (Note 1b)
T , T
Operating and Storage Junction Temperature Range
−55 to +150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS (T = 25°C, unless otherwise noted)
A
Symbol
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Q1
Q2
Unit
6.0
3.3
°C/W
R
q
JC
R
60 (Note 1a)
130 (Note 1c)
55 (Note 1b)
120 (Note 1d)
q
JA
R
q
JA
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. RθJC is guaranteed by
θ
JA
design while RθCA is determined by the user’s board design.
a. 60°C/W when mounted on
b. 55°C/W when mounted on
2
2
a 1 in pad of 2 oz copper
a 1 in pad of 2 oz copper
c. 130°C/W when mounted on
a minimum pad of 2 oz copper
d. 120°C/W when mounted on
a minimum pad of 2 oz copper
2. Q1: E of 73 mJ is based on starting T = 25°C; N−ch: L = 3 mH, I = 7 A, V = 30 V, V = 10 V. 100% test at L = 0.1 mH, I = 24 A.
AS
AS
J
J
AS
AS
DD
DD
GS
GS
AS
AS
Q2: E of 294 mJ is based on starting T = 25°C; N−ch: L = 3 mH, I = 14 A, V = 25 V, V = 10 V. 100% test at L = 0.1 mH, I = 46 A.
3. Pulsed Id please refer to Figure 11 and Figure 24 SOA graph for more details.
4. The continuous V rating is 25 V; However, a pulse of 30 V peak voltage for no longer than 100 ns duration at 600 kHz frequency can be
DS
applied.
5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal &
electro−mechanical application board design.
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2
FDPC8014AS
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Condition
Type
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown
Voltage
I
D
I
D
= 250 mA, V = 0 V
Q1
Q2
25
25
−
−
−
−
V
DSS
GS
= 1 mA, V = 0 V
GS
DBV
/ DT Breakdown Voltage Temperature
I
D
= 250 mA, referenced to 25°C
Q1
Q2
−
−
−
−
mV/°C
24
25
DSS
J
D
Coefficient
I
= 10 mA, referenced to 25°C
I
Zero Gate Voltage Drain Current
V
V
= 20 V, V = 0 V
Q1
Q2
−
−
−
−
1
mA
mA
DSS
GSS
DS
DS
GS
= 20 V, V = 0 V
500
GS
I
Gate to Source Leakage Current,
Forward
V
GS
V
GS
= 12 V / −8 V, V = 0 V
Q1
Q2
−
−
−
−
100
100
nA
nA
DS
= 12 V / −8 V, V = 0 V
DS
ON CHARACTERISTICS
V
GS(th)
Gate to Source Threshold Voltage
V
GS
V
GS
= V , I = 250 mA
Q1
Q2
0.8
1.0
1.3
1.5
2.5
3.0
V
DS
D
= V , I = 1 mA
DS
D
DV
/ DT Gate to Source Threshold Voltage
I
D
= 250 mA, referenced to 25°C
= 10 mA, referenced to 25°C
Q1
Q2
−
−
−4
−3
−
−
mV/°C
mW
GS(th)
J
D
Temperature Coefficient
I
r
Drain to Source On Resistance
Forward Transconductance
V
V
V
= 10 V, I = 20 A
Q1
−
−
−
2.9
3.6
3.9
3.8
4.7
5.3
DS(on)
GS
GS
GS
D
= 4.5 V, I = 18 A
D
= 10 V, I = 20 A, T =125°C
D
J
V
V
V
= 10 V, I = 40 A
Q2
−
−
−
0.75
0.9
1.0
1.0
1.2
1.5
GS
GS
GS
D
= 4.5 V, I = 37 A
D
= 10 V, I = 40 A , T =125°C
D
J
g
FS
V
V
= 5 V, I = 20 A
Q1
Q2
−
−
182
296
−
−
S
DS
DS
D
= 5 V, I = 40 A
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
Q1:
Q1
Q2
−
−
1695
6985
2375
9780
pF
pF
pF
W
iss
V
= 13 V, V = 0 V, f = 1 MHZ
DS
GS
Q2:
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Q1
Q2
−
−
495
2170
710
3040
V
DS
= 13 V, V = 0 V, f = 1 MHZ
oss
GS
C
Q1
Q2
−
−
54
172
100
245
rss
R
Q1
Q2
0.1
0.1
0.4
0.4
1.2
1.2
g
SWITCHING CHARACTERISTICS
td(on)
Turn−On Delay Time
Q1:
Q1
Q2
−
−
8
16
29
ns
ns
ns
ns
nC
VDD = 13 V, ID = 20 A, RGEN = 6 W
16
Q2:
tr
Rise Time
Q1
Q2
−
−
2
6
10
12
VDD = 13 V, ID = 40 A, RGEN = 6 W
td(off)
tf
Turn−Off Delay Time
Fall Time
Q1
Q2
−
−
24
48
38
76
Q1
Q2
−
−
2
5
10
10
Qg
Total Gate Charge
VGS = 0 V to 10 V
Q1: VDD = 13 V, ID = 20 A
Q2: VDD = 13 V, ID = 40 A
Q1
Q2
−
−
25
97
35
135
Qg
Total Gate Charge
VGS = 0 V to 4.5 V
Q1: VDD = 13 V, ID = 20 A
Q2: VDD = 13 V, ID = 40 A
Q1
Q2
−
−
11
44
16
62
nC
Qgs
Qgd
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Q1: VDD = 13 V, ID = 20 A
Q2: VDD = 13 V, ID = 40 A
Q1
Q2
−
−
3.4
14
−
−
nC
nC
−
−
2.2
9
−
−
Q1
Q2
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3
FDPC8014AS
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
Symbol
Parameter
Test Condition
Type
Min
Typ
Max
Unit
DRAIN−SOURCE DIODE CHARACTERISTICS
V
Source to Drain Diode Forward
Voltage
V
V
= 0 V, I = 20 A (Note 6)
Q1
Q2
−
−
0.8
0.8
V
A
1.2
1.2
SD
GS
GS
S
= 0 V, I = 40 A (Note 6)
S
I
Diode Continuous Forward
Current
T
C
= 25°C
Q1
Q2
−
−
59
159
−
−
S
I
Diode Pulse Current
Q1
Q2
−
−
266
1116
−
−
A
S,Pulse
t
Reverse Recovery Time
Reverse Recovery Charge
Q1: I = 20 A, di/dt = 100 A/ms
Q1
Q2
−
−
25
44
40
70
ns
nC
rr
F
Q2: I = 40 A, di/dt = 300 A/ms
F
Q
Q1
Q2
−
−
10
78
20
125
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
TYPICAL CHARACTERISTICS (Q1 N−CHANNEL) (T = 25°C unless otherwise noted)
J
5
4
3
2
1
0
75
60
45
30
15
0
PULSE DURATION = 80 ms
DUTY CIRCLE = 0.5% MAX
VGS = 10 V
VGS = 2.5 V
V
GS = 4.5 V
GS = 3.5 V
VGS = 3 V
V
VGS = 3 V
VGS = 2.5 V
PULSE DURATION = 80 ms
DUTY CIRCLE = 0.5% MAX
= 10 V
VGS
60
VGS = 4.5 V
VGS= 3.5 V
0.0
0.2
0.4
0.6 0.8 1.0
0
15
30
45
75
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 1. On Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain Current
and Gate Voltage
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
12
ID = 20 A
VGS = 10 V
PULSE DURATION = 80 ms
DUTY CIRCLE = 0.5% MAX
9
ID = 20 A
6
T = 125°C
J
3
0
T = 25°C
J
−75 −50 −25
0
25
50
75 100 125 150
1
2
3
4
5
6
7
8
9
10
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance vs. Junction
Temperature
Figure 4. On−Resistance vs. Gate to Source Voltage
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FDPC8014AS
TYPICAL CHARACTERISTICS (Q1 N−CHANNEL) (T = 25°C unless otherwise noted) (continued)
J
75
60
45
30
15
0
100
PULSE DURATION = 80 ms
DUTY CIRCLE = 0.5% MAX
V
= 5 V
V
GS
= 0 V
DS
10
1
T = 150°C
J
T = 150°C
J
T = 25°C
J
0.1
T = 25°C
J
0.01
0.001
T = −55°C
T = −55°C
J
J
1.0
1.5
2.0
2.5
3.0
0.0
0.2
0.4
0.6
0.8
1.0
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage vs.
Source Current
10
8
10000
I
D
= 20 A
V
= 13 V
DD
1000
100
10
C
iss
6
V
DD
= 10 V
Coss
4
V
DD
= 15 V
2
Crss
f = 1 MHz
= 0 V
V
GS
0
0
6
12
18
24
30
0.1
1
10
25
Qg, GATE CHARGE (nC)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain to Source Voltage
60
50
30
10
T = 25°C
J
V
GS
= 10 V
40
30
20
10
0
T = 100°C
J
T = 125°C
J
V
GS
= 4.5 V
R
= 6.0°C/W
q
JC
1
0.001
0.01
t
0.1
1
10
100
25
50
75
100
125
150
, TIME IN AVALANCHE (ms)
T , CASE TEMPERATURE (°C)
C
AV
Figure 9. Unclamped Inductive Switching Capability
Figure 10. Maximum Continuous Drain Current vs.
Case Temperature
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FDPC8014AS
TYPICAL CHARACTERISTICS (Q1 N−CHANNEL) (T = 25°C unless otherwise noted) (continued)
J
10000
300
100
SINGLE PULSE
= 6.0°C/W
R
10 ms
q
JC
T
C
= 25°C
10
1
1000
100
10
100 ms
1 ms
THIS AREA IS LIMITED
10 ms
BY r
DS(on)
100 ms/DC
SINGLE PULSE
0.1
0.01
T = MAX RATED
J
R
= 6.0°C/W
= 25°C
CURVE BENT TO
MEASURED DATA
q
JC
T
C
10−5
10−4
10−3
t, PULSE WIDTH (s)
10−2
10−1
0.01
0.1
1
10
100
1
V
DS
, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power Dissipation
2
DUTY CYCLE−DESCENDING ORDER
1
D = 0.5
0.2
P
DM
0.1
0.1
0.05
0.02
0.01
t1
t2
NOTES:
SINGLE PULSE
0.01
0.001
Z
q
(t) = r(t) x R
q
JC
JC
R
= 6.0°C/W
q
JC
DUTY FACTOR: D = t / t
1
(t)
2
T − T = P
x Z
q
J
C
DM
JC
10−5
10−4
10−3
t, RECTANGULAR PULSE DURATION (sec)
10−2
10−1
1
Figure 13. Junction−to−Case Transient Thermal Response Curve
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FDPC8014AS
TYPICAL CHARACTERISTICS (Q2 N−CHANNEL) (T = 25°C unless otherwise noted)
J
150
120
90
60
30
0
8
V
= 10 V
GS
PULSE DURATION = 80 ms
DUTY CIRCLE = 0.5% MAX
V
GS
= 2.5 V
V
GS
= 4.5 V
6
4
2
0
V
= 3.5 V
GS
V
= 3 V
GS
V
= 2.5 V
GS
V
GS
= 3 V
PULSE DURATION = 80 ms
DUTY CIRCLE = 0.5% MAX
V
= 3.5 V
60
V
= 4.5 V V = 10 V
GS
GS GS
0.0
0.2
0.4
0.6
0.8
0
30
90
120
150
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 14. On−Region Characteristics
Figure 15. Normalized on−Resistance vs.
Drain Current and Gate Voltage
5
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
I
V
= 40 A
D
PULSE DURATION = 80 ms
DUTY CIRCLE = 0.5% MAX
= 10 V
GS
4
3
2
1
0
I
D
= 40 A
T = 125°C
J
T = 25°C
J
−75 −50 −25
0
25
50
75 100 125 150
2
3
4
5
6
7
8
9
10
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 16. Normalized On−Resistance vs.
Figure 17. On−Resistance vs. Gate to Source Voltage
Junction Temperature
150
120
90
60
30
0
100
10
V
GS
= 0 V
PULSE DURATION = 80 ms
DUTY CIRCLE = 0.5% MAX
V
DS
= 5 V
T = 125°C
J
1
T = 25°C
J
0.1
T = 25°C
T = −55°C
J
T = 125°C
J
J
0.01
0.001
T = −55°C
J
1.0
1.5
2.0
2.5
3.0
0.0
0.2
0.4
0.6
0.8
1.0
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 18. Transfer Characteristics
Figure 19. Source to Drain Diode Forward Voltage vs.
Source Current
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FDPC8014AS
TYPICAL CHARACTERISTICS (Q2 N−CHANNEL) (T = 25°C unless otherwise noted) (continued)
J
10
8
10000
I
D
= 40 A
C
iss
V
DD
= 13 V
6
Coss
1000
V
DD
= 10 V
4
V
DD
= 15 V
Crss
2
f = 1 MHz
= 0 V
V
GS
0
100
0.1
0
20
40
60
80
100
1
10
25
Qg, GATE CHARGE (nC)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 20. Gate Charge Characteristics
Figure 21. Capacitance vs. Drain to Source Voltage
160
128
100
10
1
V
GS
= 10 V
T = 25°C
96
64
32
0
J
T = 125°C
J
V
GS
= 4.5 V
T = 100°C
J
R
= 3.3°C/W
q
JC
0.001
0.01
0.1
1
10
100
1000
25
50
75
100
125
150
t , TIME IN AVALANCHE (ms)
AV
T , CASE TEMPERATURE (°C)
C
Figure 22. Unclamped Inductive Switching Capability
Figure 23. Maximum Continuous Drain Current vs.
Case Temperature
2000
1000
10000
SINGLE PULSE
R
= 3.3°C/W
q
JC
T
C
= 25°C
10 ms
100
1000
100
10
100 ms
10
1
THIS AREA IS LIMITED
BY r
1 ms
DS(on)
10 ms
100 ms/DC
SINGLE PULSE
T = MAX RATED
J
R
= 3.3°C/W
= 25°C
CURVE BENT TO
MEASURED DATA
q
JC
T
C
0.1
0.1
10−5
10−4
10−3
t, PULSE WIDTH (s)
10−2
10−1
1
10
70
1
V
DS
, DRAIN to SOURCE VOLTAGE (V)
Figure 24. Forward Bias Safe Operating Area
Figure 25. Single Pulse Maximum Power Dissipation
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FDPC8014AS
TYPICAL CHARACTERISTICS (Q2 N−CHANNEL) (T = 25°C unless otherwise noted) (continued)
J
2
DUTY CYCLE−DESCENDING ORDER
1
D = 0.5
0.2
P
DM
0.1
0.1
0.05
0.02
0.01
t1
t2
NOTES:
SINGLE PULSE
0.01
0.001
Z
q
(t) = r(t) x R
q
JC
JC
R
= 3.3°C/W
q
JC
DUTY FACTOR: D = t / t
1
(t)
2
T − T = P
x Z
q
J
C
DM
JC
−5
−4
−3
−1
1
10
10
10
t, RECTANGULAR PULSE DURATION (sec)
10−2
10
Figure 26. Junction−to−Case Transient Thermal Response Curve
TYPICAL CHARACTERISTICS
SyncFET Schottky Body Diode Characteristics
Figure 27 shows the reverses recovery characteristic of the
FDPC8014AS.
Schottky barrier diodes exhibit significant leakage at high
temperature and high reverse voltage. This will increase the
power in the device.
ON Semiconductor’s SyncFET process embeds a
Schottky diode in parallel with POWERTRENCH
MOSFET. This diode exhibits similar characteristics to a
discrete external Schottky diode in parallel with a MOSFET.
10−2
50
40
T = 125°C
J
10−3
10−4
10−5
10−6
T = 100°C
J
30
di/dt = 300 A/ms
20
10
0
T = 25°C
J
−10
0
5
10
15
20
25
100 150 200 250 300 350 400 450 500
TIME (ns)
V
DS
, REVERSE VOLTAGE (V)
Figure 27. FDPC8014AS SyncFET Body Diode Reverse
Recovery Characteristic
Figure 28. SyncFET Body Diode Reverse Leakage vs.
Drain−source Voltage
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9
FDPC8014AS
ORDERING INFORMATION
†
Device
Device Marking
FDPC8014AS
Package
Reel Size
Tape Width
Shipping
FDPC8014AS
Power Clip 56
PDFN8 5x6, 1.27P
(Pb−Free)
13”
12 mm
2000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
POWERTRENCH is registered trademark and SyncFET is trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the
United States and/or other countries.
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10
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PQFN8 5x6, 1.27P
CASE 483AR
ISSUE A
DATE 21 MAY 2021
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98AON13666G
PQFN8 5x6, 1.27P
PAGE 1 OF 1
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相关型号：
FDPC8014S
Power Field-Effect Transistor, 20A I(D), 25V, 0.0038ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, POWER CLIP 56, 8 PIN
FAIRCHILD
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