FDPC8016S [ONSEMI]
25V，不对称双 N 沟道，PowerTrench® Power Clip MOSFET;
| 型号： | FDPC8016S |
| 厂家： | 
ONSEMI |
| 描述： | 25V，不对称双 N 沟道，PowerTrench® Power Clip MOSFET 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总12页 (文件大小：348K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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MOSFET - Dual N‐Channel,
Asymmetric,
POWERTRENCHꢀ Power
Clip 25 V
FDPC8016S
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General Description
ELECTRICAL CONNECTION
This device includes two specialized N−Channel MOSFETs in a
dual package. The switch node has been internally connected to enable
easy placement and routing of synchronous buck converters. The
control MOSFET (Q1) and synchronous SyncFET™ (Q2) have been
designed to provide optimal power efficiency.
Features
Q1: N-Channel
• Max R
• Max R
= 3.8 mW at V = 10 V, I = 20 A
GS D
DS(on)
= 4.7 mW at V = 4.5 V, I = 18 A
N-Channel MOSFET
DS(on)
GS
D
Q2: N-Channel
PIN1
• Max R
= 1.4 mW at V = 10 V, I = 35 A
GS D
DS(on)
• Max R
= 1.7 mW at V = 4.5 V, I = 32 A
GS D
DS(on)
• Low Inductance Packaging Shortens Rise/Fall Times, Resulting in
Lower Switching Losses
• MOSFET Integration Enables Optimum Layout for Lower Circuit
Inductance and Reduced Switch Node Ringing
Top View
Bottom View
Power Clip 56
(PQFN8 5x6)
CASE 483AR
• These Devices are Pb−Free and are RoHS Compliant
PIN ASSIGNMENT
Applications
• Computing
LSG
SW
HSG
• Communications
GR
V+
V+
• General Purpose Point of Load
SW
SW
*PAD10 V+(HSD)
MARKING DIAGRAM
$Y&Z&3&K
05OD
15OD
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
05OD 15OD
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
November, 2019 − Rev. 6
FDPC8016S/D
FDPC8016S
PINOUT DESCRIPTION
Pin
1
Name
HSG
GR
Description
High Side Gate
Gate Return
Pin
Name
V+(HSD)
SW
Description
Pin
8
Name
LSG
Description
Low Side Gate
Low Side Source
3. 4, 10
5, 6, 7
High Side Drain
2
Switching Node,
Low Side Drain
9
GND(LSS)
MOSFET MAXIMUM RATINGS (T = 25°C, Unless otherwise specified)
A
Symbol
Parameter
Q1
25 (Note 5)
12
Q2
25 (Note 5)
12
Unit
V
V
DS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
V
I
D
A
Continuous (T = 25°C)
60
20 (Note 1a)
75
100
35 (Note 1b)
140
C
A
Continuous (T = 25°C)
Pulsed (T = 25°C) (Note 4)
A
E
Single Pulsed Avalanche Energy (Note 3)
73
216
mJ
W
AS
P
Power Dissipation for Single Operation
D
21
42
(T = 25°C)
C
2.1 (Note 1a)
2.3 (Note 1b)
(T = 25°C)
A
T , T
Operating and Storage Junction Temperature Range
−55 to +150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
Q1
Q2
Unit
R
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
6.0
3.0
_C/W
_C/W
_C/W
q
JC
R
60 (Note 1a)
130 (Note 1c)
55 (Note 1b)
120 (Note 1d)
q
JA
R
q
JA
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
05OD/15OD
FDPC8016S
Power Clip 56
13″
12 mm
3,000 Units
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
D
I
D
= 250 μA, V = 0 V
Q1
Q2
25
25
−
−
−
−
V
DSS
GS
= 1 mA, V = 0 V
GS
DBV
/DT
Breakdown Voltage Temperature
Coefficient
I
I
= 250 μA, referenced to 25°C
= 10 mA, referenced to 25°C
Q1
Q2
−
−
24
28
−
−
mV/_C
mA
DSS
J
D
D
I
Zero Gate Voltage Drain Current
V
V
= 20 V, V = 0 V
Q1
Q2
−
−
−
−
1
500
DSS
DS
DS
GS
= 20 V, V = 0 V
GS
I
Gate to Source Leakage Current,
Forward
V
GS
V
GS
= 12 V / −8 V, V = 0 V
Q1
Q2
−
−
−
−
100
100
nA
nA
GSS
DS
= 12 V / −8 V, V = 0 V
DS
ON CHARACTERISTICS
V
GS(th)
Gate to Source Threshold Voltage
V
GS
V
GS
= V , I = 250 μA
Q1
Q2
0.8
1.0
1.3
1.5
2.5
2.5
V
DS
D
= V , I = 1 mA
DS
D
DV
/DT
Gate to Source Threshold Voltage
Temperature Coefficient
I
D
= 250 μA, referenced to 25°C
= 10 mA, referenced to 25°C
Q1
Q2
−
−
−4
−3
−
−
mV/_C
GS(th)
J
D
I
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2
FDPC8016S
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Unit
ON CHARACTERISTICS
R
Drain to Source On Resistance
V
V
V
= 10 V, I = 20 A
Q1
−
−
−
2.8
3.4
3.9
3.8
4.7
5.3
mW
DS(on)
GS
GS
GS
D
= 4.5 V, I = 18 A
D
= 10 V, I = 20 A,
D
T =125°C
J
V
V
V
= 10 V, I = 35 A
Q2
−
−
−
1.1
1.3
1.5
1.4
1.7
1.9
GS
GS
GS
D
= 4.5 V, I = 32 A
D
= 10 V, I = 35 A ,
D
T =125°C
J
g
FS
Forward Transconductance
V
DS
V
DS
= 5 V, I = 20 A
Q1
Q2
−
−
182
241
−
−
S
D
= 5 V, I = 35 A
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
Q1:
DS
f = 1 MHZ
Q1
Q2
−
−
1695
4715
2375
6600
pF
pF
pF
W
iss
V
= 13 V, V = 0 V,
GS
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Q1
Q2
−
−
495
1195
710
1675
oss
Q2:
V
DS
= 13 V, V = 0 V,
GS
f = 1 MHZ
C
Q1
Q2
−
−
54
159
100
290
rss
R
Q1
Q2
0.1
0.1
0.4
0.5
1.2
1.5
g
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Q1:
Q1
Q2
−
−
8
16
24
ns
ns
ns
ns
nC
d(on)
V
= 13 V, I = 20 A,
13
DD
D
R
= 6 Ω
GEN
t
r
Rise Time
Q1
Q2
−
−
2
4
10
10
Q2:
V
= 13 V, I = 35 A,
D
= 6 Ω
DD
GEN
R
t
Turn-Off Delay Time
Fall Time
Q1
Q2
−
−
24
38
38
61
d(off)
t
f
Q1
Q2
−
−
2
3
10
10
Q
Q
Total Gate Charge
V
GS
= 0 V to 10 V
Q1
Q2
−
−
25
67
35
94
g
g
Q1: V = 13 V, I = 20 A
DD
D
Q2: V = 13 V, I = 35 A
DD
D
Total Gate Charge
V
GS
= 0 V to 4.5 V
Q1
Q2
−
−
11
31
16
44
nC
Q1: V = 13 V, I = 20 A
DD
D
Q2: V = 13 V, I = 35 A
DD
D
Q
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Q1: V = 13 V, I = 20 A
Q1
Q2
−
−
3.4
10
−
−
nC
nC
gs
DD
D
Q2: V = 13 V, I = 35 A
DD
D
Q
Q1: V = 13 V, I = 20 A
Q1
Q2
−
−
2.2
6.3
−
−
gd
DD
D
Q2: V = 13 V, I = 35 A
DD
D
DRAIN-SOURCE DIODE CHARACTERISTICS
V
Source to Drain Diode Forward
Voltage
V
V
= 0 V, I = 20 A
Q1
Q2
−
−
−
0.8
0.8
1.2
1.2
V
SD
GS
GS
S
= 0 V, I = 35 A (Note 2)
S
t
Reverse Recovery Time
Q1:
Q1
Q2
25
33
40
53
ns
nC
rr
I = 20 A, di/dt = 100 A/μs
F
Q2:
Q
Reverse Recovery Charge
Q1
Q2
10
31
20
50
rr
I = 35 A, di/dt = 200 A/μs
F
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. R
is determined
CA
q
q
JA
by the user’s board design.
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3
FDPC8016S
a) 60°C/W when mounted on
b) 55°C/W when mounted on
2
2
a 1 in pad of 2 oz copper.
a 1 in pad of 2 oz copper.
c) 130°C/W when mounted on
d) 120°C/W when mounted on
a minimum pad of 2 oz copper.
a minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. Q1:
E
of 73 mJ is based on starting T = 25_C; N-ch: L = 3 mH, I = 7 A, V = 30 V, V = 10 V,
AS
J
AS
DD
GS
100% tested at L = 0.1 mH, I = 24 A.
AS
Q2:
E
of 216 mJ is based on starting T = 25_C; N-ch: L = 3 mH, I = 12 A, V = 25 V, V = 10 V,
AS
J
AS
DD
GS
100% tested at L = 0.1 mH, I = 39 A.
AS
4. Pulsed Id limited by junction temperature, td <=10 μs. Please refer to SOA curve for more details.
5. The continuous V rating is 25 V; However, a pulse of 30 V peak voltage for no longer than 100 ns duration at 600 KHz frequency can be
DS
applied.
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4
FDPC8016S
TYPICAL CHARACTERISTICS (Q1 N-Channel)
(T = 25°C unless otherwise noted)
J
75
60
45
30
15
0
5
4
3
2
VGS = 10 V
ꢀs
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
GS = 2.5 V
VGS = 4.5 V
VGS = 3.5 V
VGS = 3 V
VGS = 3 V
VGS = 2.5 V
1
ꢀ s
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
VGS = 10 V
VGS = 4.5 V
VGS = 3.5 V
0
0.0
0.2
0.4
0.6
0.8
1.0
0
15 30
45
60
75
V
DS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics
Figure 2. Normalized On-Resistance vs. Drain
Current and Gate Voltage
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
12
ID = 20 A
VGS = 10 V
ꢀ
s
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
9
6
3
0
ID = 20 A
TJ = 125 o
C
TJ = 25 o
C
−75 −50 −25
0
25 50 75 100 125 150
C)
1
2
3
4
5
6
7
8
9
10
TJ, JUNCTION TEMPERATURE (o
V
GS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On-Resistance vs.
Junction Temperature
Figure 4. On-Resistance vs. Gate to Source
Voltage
100
75
60
45
30
15
0
ꢀ s
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80
VGS = 0 V
V
DS = 5 V
10
1
TJ = 150 o
C
TJ = 150 o
C
TJ = 25 oC
0.1
0.01
TJ = 25 o
C
TJ = −55oC
TJ = −55 o
C
0.001
1.0
1.5
2.0
2.5
3.0
0.0
0.2
0.4
0.6
0.8
1.0
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward
Voltage vs. Source Current
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FDPC8016S
TYPICAL CHARACTERISTICS (Q1 N-Channel)
(T = 25°C unless otherwise noted)
J
10
8
10000
1000
100
ID = 20 A
VDD = 13 V
Ciss
6
VDD = 10 V
Coss
4
VDD = 15 V
f = 1 MHz
GS = 0 V
2
Crss
V
0
10
0
6
12
18
24
30
100
80
0.1
1
10
25
Q , GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
g
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain to Source Voltage
70
60
30
10
TJ = 25 oC
50
VGS = 10 V
40
TJ = 100 o
C
VGS = 4.5 V
30
20
TJ = 125 o
C
R
= 6.0 oC/W
ꢁ
JC
10
0
1
0.001
0.01
0.1
1
10
25
50
75
100
125
150
T , CASE TEMPERATURE (oC)
tAV, TIME IN AVALANCHE (ms)
C
Figure 9. Unclamped Inductive
Switching Capability
Figure 10. Maximum Continuous Drain Current
vs. Case Temperature
5000
500
100
SINGLE PULSE
= 6.0 oC/W
R
ꢁ
JC
1000
10 ꢀs
TC = 25 o
C
10
1
ꢀs
100
THIS AREA IS
LIMITED BY r
DS(on)
100
1 ms
10 ms
DC
SINGLE PULSE
TJ = MAX RATED
= 6.0oC/W
C = 25oC
R
ꢁ
JC
CURVE BENT TO
MEASURED DATA
T
0.1
10
10−5
10−4
10−3
t, PULSE WIDTH (sec)
10−2
10−1
0.1
1
10
1
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
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FDPC8016S
TYPICAL CHARACTERISTICS (Q1 N-Channel)
(T = 25°C unless otherwise noted)
J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
P
DM
0.1
0.1
0.01
0.05
0.02
0.01
t
1
t
2
NOTES:
Z
R
SINGLE PULSE
θ
(t) = r(t) x
θ
JC
JC
= 6.0 oC/W
R
θ
JC
DUTY FACTOR: D = t / t2
1
Z
θ
JC
(t)
T
−T = P x
DM
J
C
0.001
10−5
10−4
10−3
10−2
10−1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Case Transient Thermal Response Curve
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FDPC8016S
TYPICAL CHARACTERISTICS (Q2 N-Channel)
(T = 25°C unless otherwise noted)
J
140
120
100
80
6.0
4.5
3.0
V
GS = 10 V
ꢀs
PULSE DURATION = 80
VGS = 2.5 V
DUTY CYCLE = 0.5% MAX
VGS = 4.5 V
VGS = 3.5 V
VGS = 3 V
VGS = 3 V
60
VGS = 2.5 V
40
1.5
0.0
ꢀ s
20
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
VGS = 10 V
VGS = 3.5 V
VGS = 4.5 V
0
0
20
40
60
80
100 120 140
0.0
0.2
0.4
0.6
0.8
ID, DRAIN CURRENT (A)
V
DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 14. On-Region Characteristics
Figure 15. Normalized On-Resistance vs. Drain
Current and Gate Voltage
5
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
ꢀs
ID
PULSE DURATION = 80
= 35 A
DUTY CYCLE = 0.5% MAX
GS = 10 V
V
4
ID = 35 A
3
2
TJ = 125 o
C
1
0
TJ = 25 o
C
1
2
3
4
5
6
7
8
9
10
−75 −50 −25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE ( oC)
V
GS, GATE TO SOURCE VOLTAGE (V)
Figure 16. Normalized On-Resistance vs.
Junction Temperature
Figure 17. On-Resistance vs. Gate to Source
Voltage
140
200
100
VDS = 5 V
VGS = 0 V
120
100
80
60
40
20
0
TJ = 25 oC
10
TJ = 125 o
C
TJ = 125 o
C
1
0.1
TJ = 25 oC
TJ = −55oC
TJ = −55oC
0.01
0.001
ꢀs
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
1
2
3
4
0.0
0.2
0.4
0.6
0.8
1.0
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 18. Transfer Characteristics
Figure 19. Source to Drain Diode Forward
Voltage vs. Source Current
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FDPC8016S
TYPICAL CHARACTERISTICS (Q2 N-Channel)
(T = 25°C unless otherwise noted)
J
10
8
10000
1000
100
ID = 35 A
Ciss
VDD = 13 V
6
Coss
VDD = 10 V
4
VDD = 15 V
Crss
f = 1 MHz
GS = 0 V
2
V
0
0
20
40
60
80
0.1
1
10
VDS
, DRAIN TO SOURCE VOLTAGE (V)
25
Qg , GATE CHARGE (nC)
Figure 20. Gate Charge Characteristics
Figure 21. Capacitance vs. Drain to Source Voltage
160
140
120
50
10
TJ = 25 oC
V
GS = 10 V
100
80
60
40
20
0
TJ = 100 o
C
Limited by Package
= 3.0 oC/W
R
VGS = 4.5 V
ꢁ
JC
TJ = 125 o
C
1
0.001 0.01
0.1
1
10
100
1000
25
50
75
100
125
150
tAV, TIME IN AVALANCHE (ms)
T , CASE TEMPERATURE (oC)
C
Figure 22. Unclamped Inductive
Switching Capability
Figure 23. Maximum Continuous Drain Current
vs. Case Temperature
1000
100
10
10000
SINGLE PULSE
= 3.0 oC/W
R
ꢁ
JC
ꢀs
10
= 25 oC
TC
1000
100
10
ꢀs
100
THIS AREA IS
1 ms
LIMITED BY rDS(on)
10 ms
DC
SINGLE PULSE
1
TJ = MAX RATED
J
o
R
ꢁ
JC = 3.0
CURVE BENT TO
MEASURED DATA
C = 25oC
T
0.1
10−5
10−4
10−3
t, PULSE WIDTH (sec)
10−2
10−1
0.1
1
10
80
1
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 24. Forward Bias Safe Operating Area
Figure 25. Single Pulse Maximum Power
Dissipation
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FDPC8016S
TYPICAL CHARACTERISTICS (Q2 N-Channel)
(T = 25°C unless otherwise noted)
J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
P
DM
0.05
0.02
0.01
0.1
0.01
t
1
t
2
NOTES:
Z
R
θ
JC
(t) = r(t) x
θ
JC
= 3.0 oC/W
DUTY FACTOR: D = t / t2
R
θ
JC
SINGLE PULSE
1
Z
T
−T = P x
DM
(t)
JC
θ
J
C
0.001
10−5
10−4
10−3
10−2
10−1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 26. Junction-to-Case Transient Thermal Response Curve
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FDPC8016S
TYPICAL CHARACTERISTICS (continued)
SyncFET Schottky Body Diode Characteristics
ON’s SyncFET process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits
similar characteristics to a discrete external Schottky diode
in parallel with a MOSFET. Figure 27 shows the reverse
recovery characteristic of the FDPC8016S.
Schottky barrier diodes exhibit significant leakage at high
temperature and high reverse voltage. This will increase the
power in the device.
40
35
30
25
20
10−2
TJ = 125 o
C
10−3
10−4
10−5
10−6
TJ = 100 oC
di / dt = 200 A/ ꢀs
15
10
5
TJ = 25 o
C
0
−5
0
5
10
15
20
25
50
100 150 200
250
300
350
400
TIME (ns)
VDS, REVERSE VOLTAGE (V)
Figure 27. FDPC8016S SyncFET Body Diode Reverse
Recovery Characteristic
Figure 28. SyncFET Body Diode Reverse Leakage vs.
Drain-Source Voltage
POWERTRENCH is a registered trademark and SyncFET is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its
subsidiaries in the United States and/or other countries.
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