FDP020N06B-F102 [ONSEMI]
N 沟道 PowerTrench® MOSFET 60V,313A,2mΩ;型号: | FDP020N06B-F102 |
厂家: | ONSEMI |
描述: | N 沟道 PowerTrench® MOSFET 60V,313A,2mΩ |
文件: | 总9页 (文件大小:1012K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
FDP020N06B
®
N 沟道PowerTrench MOSFET
60 V、313 A、2 m
特性
•
说明
此N 沟道 MOSFET 采用飞兆半导体先进的PowerTrench® 工艺
生产,这一先进工艺是专为最大限度地降低导通电阻并保持卓越
开关性能而定制的。
RDS(on) = 1.65 m ( Typ.)@VGS = 10 V, ID = 100 A
• 低FOM RDS(on) * QG
• 低反向恢复电荷,Qrr =194 nC
• 软反向恢复体二极管
• 可实现高效同步整流
• 快速开关速度
应用
• 用于ATX/ 服务器/ 电信PSU 的同步整流
• 电池保护电路
• 电机驱动和不间断电源
• 可再生系统
•
100% 经过UIL 测试
• 符合RoHS 标准
D
G
G
D
S
TO-220
S
最大绝对额定值TC =25°C 除非另有说明。
FDP020N06B-F102
符号
参数
单位
60
±20
313*
221*
120
1252
1859
6.0
V
VDSS
VGSS
漏极- 源极电压
栅极- 源极电压
V
A
- 连续(TC=25°C,硅限制)
- 连续(TC=100°C,硅限制)
- 连续(TC= 25°C,封装限制)
- 脉冲
ID
漏极电流
A
mJ
IDM
漏极电流
(说明1)
(说明2)
(说明3)
EAS
单脉冲雪崩能量
二极管恢复dv/dt 峰值
V/ns
W
dv/dt
(TC = 25°C)
333
2.2
PD
功耗
W/°C
°C
- 降低至25°C 以上
TJ, TSTG
TL
工作和存储温度范围
-55 至+175
300
°C
用于焊接的最大引线温度,距离外壳1/8",持续5 秒
* 封装限制电流为120 安。
热性能
FDP020N06B-F102
符号
参数
单位
RJC
RJA
0.45
62.5
结至外壳热阻最大值
结至环境热阻最大值
°C/W
Publication Order Number:
©2011 飞兆半导体公司
December-2017, Rev. 3
FDP020N06BCN/D
封装标识与定购信息
器件编号
顶标
FDP020N06B
封装
包装方法
塑料管
卷尺寸
不适用
带宽
数量
FDP020N06B-F102
TO-220
不适用
50 个
电气特性TC =25°C 除非另有说明。
符号
参数
测试条件
最小值 典型值 最大值
单位
关断特性
BVDSS
ID = 250 A, VGS = 0 V
ID=250 A,温度为25°C
60
-
-
-
-
V
漏极- 源极击穿电压
BVDSS
/ TJ
击穿电压温度系数
0.03
V/°C
VDS = 48 V, VGS = 0 V
VDS = 48 V, TC = 150°C
VGS = ±20 V, VDS = 0 V
-
-
-
-
-
-
1
IDSS
IGSS
A
零栅极电压漏极电流
500
±100
nA
栅极- 体漏电流
导通特性
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 250 A
VGS = 10 V, ID = 100 A
VDS = 10 V, ID = 100 A
2.5
3.3
1.65
263
4.5
2.0
-
V
m
S
栅极阈值电压
-
-
漏极至源极静态导通电阻
正向跨导
动态特性
Ciss
-
-
-
-
-
-
-
-
-
16100
3840
127
5897
206
87
20930
pF
pF
pF
pF
nC
nC
nC
nC
输入电容
V
DS = 30 V, VGS = 0 V,
Coss
4992
输出电容
f = 1 MHz
Crss
-
反向传输电容
Coss(er)
Qg(tot)
Qgs
V
V
DS = 30 V, VGS = 0 V
DS = 30 V, ID = 100 A,
-
能量相关输出电容
10 V 的栅极电荷总量
栅极- 源极栅极电荷
栅极- 阈值- 平台
栅极- 漏极“ 米勒” 电荷
等效串联电阻(G-S)
268
-
-
-
-
Qgs2
VGS = 10 V
36
(说明4)
Qgd
34
ESR
f = 1 MHz
0.9
开关特性
td(on)
tr
td(off)
tf
-
-
-
-
74
62
158
134
234
94
ns
ns
ns
ns
导通延迟时间
开通上升时间
关断延迟时间
关断下降时间
VDD = 30 V, ID = 100 A,
VGS = 10 V, RG = 4.7
112
42
(说明4)
漏极- 源极二极管特性
IS
-
-
-
-
-
-
-
313*
1252
1.25
-
A
A
漏极- 源极二极管最大正向连续电流
ISM
VSD
trr
漏极- 源极二极管最大正向脉冲电流
漏极- 源极二极管正向电压
反向恢复时间
VGS = 0 V, ISD = 100 A
-
V
106
194
ns
nC
V
GS = 0 V, VDD = 30 V, ISD = 100 A,
dIF/dt = 100 A/s
Qrr
-
反向恢复电荷
注意:
1: 重复额定值:脉冲宽度受限于最大结温
2: 开始T =25°C,L=3 mH,I =35.2 A
J
AS
3:
I
100 A, di/dt 200 A/s, V BV
,开始T =25°C
DSS J
SD
DD
4: 本质上独立于工作温度的典型特性。
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2
典型性能特征
图1. 导通区域特性
400
图2. 传输特性
500
*Notes:
1. VDS = 10V
2. 250s Pulse Test
100
10
1
100
25oC
175oC
VGS = 15.0V
-55oC
10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
*Notes:
1. 250s Pulse Test
2. TC = 25oC
10
0.1
3
4
5
6
7
1
2
VGS, Gate-Source Voltage[V]
VDS, Drain-Source Voltage[V]
图3. 导通电阻变化与漏极电流和栅极电压的关系
图4. 体二极管正向电压变化与源极电流和温度的关系
2.0
500
1.8
100
175oC
25oC
VGS = 10V
1.6
10
VGS = 20V
1.4
*Notes:
1. VGS = 0V
*Note: TC = 25oC
300 400 500
2. 250s Pulse Test
1.2
1
0
100
200
ID, Drain Current [A]
0.3 0.4
0.6
0.8
1.0
1.2 1.3
VSD, Body Diode Forward Voltage [V]
图5. 电容特性
40000
图6. 栅极电荷特性
10
Ciss
VDS = 12V
DS = 30V
DS = 48V
8
6
4
2
0
10000
V
V
Coss
1000
*Note:
1. VGS = 0V
2. f = 1MHz
Crss
C
C
C
= C + C (C = shorted)
gs gd ds
iss
= C + C
ds gd
oss
rss
100
50
*Note: ID = 100A
= C
gd
0
30
60
90
120 150 180 210
0.1
1
10
60
Qg, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
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3
典型性能特性(接上页)
图7. 击穿电压变化与温度的关系
1.08
图8. 导通电阻变化与温度的关系
1.8
1.6
1.4
1.2
1.0
1.04
1.00
*Notes:
1. VGS = 10V
*Notes:
1. VGS = 0V
0.8
0.96
0.94
2. ID = 100A
2. ID = 250A
0.6
-80
-40
0
40
80
120 160 200
-80
-40
0
40
80
120 160 200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
图9. 最大安全工作区
5000
图10. 最大漏极电流与壳温的关系
400
1000
100
VGS= 10V
10us
100us
320
1ms
240
160
10ms
DC
10
Operation in This Area
1
0.1
is Limited by R DS(on)
*Notes:
1. TC = 25oC
2. TJ = 175oC
R
JC= 0.45oC/W
80
0
3. Single Pulse
0.01
0.1
1
10
100
25
50
75
100
125
150
175
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
图11. 非箝位感性开关能力
图12. Eoss 与漏源极电压
100
6
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS-VDD)
If R = 0
tAV = (L/R)In[(IAS*R)/(1.3*RATED BVDSS-VDD)+1]
5
4
3
2
1
0
STARTING TJ = 25oC
10
STARTING TJ = 150oC
1
0.01
0
15
30
45
60
0.1
1
10
100
1000 10000
VDS, Drain to Source Voltage [V]
tAV, Time In Avalanche [ms]
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4
典型性能特性(接上页)
图13. 瞬态热响应曲线
1
0.5
0.2
0.1
PDM
0.1
t1
t2
0.05
*Notes:
0.02
0.01
1. ZJC(t) = 0.45oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
0.01
Single pulse
0.004
10-5
10-4
10-3
10-2
10-1
1
t
,矩形脉冲持续时间[ 秒]
1
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5
I = 常量
G
图14. 栅极电荷测试电路与波形
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
图15. 阻性开关测试电路与波形
VGS
图16. 非箝位电感开关测试电路与波形
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6
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
图17. 二极管恢复dv/dt 峰值测试电路与波形
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7
机械尺寸
图18. TO-220 模塑3 引线Jedec 变体AB (Delta)
封装图纸作为一项服务,提供给考虑飞兆半导体元件的客户。具体参数可能会有变化,且不会做出相应通知。请注意图纸上的版本和 /
或日期,并联系飞兆半导体代表核实或获得最新版本。封装规格并不扩大飞兆公司全球范围内的条款与条件,尤其是其中涉及飞兆公司
产品保修的部分。
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8
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相关型号:
FDP030N06B_F102
Power Field-Effect Transistor, 120A I(D), 60V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3
FAIRCHILD
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