FDP027N08B-F102 [ONSEMI]
N 沟道，PowerTrench® MOSFET，80V，223A，2.7mΩ;
| 型号： | FDP027N08B-F102 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® MOSFET，80V，223A，2.7mΩ |
| 文件： | 总9页 (文件大小：1302K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FDP027N08B
N 沟道 PowerTrench MOSFET
80 V、 223 A、 2.7 m
®
特性
说明
该 N 沟道 MOSFET 采用飞兆半导体的 PowerTrench® 工艺生
产，这一先进工艺是专为最大限度地降低导通阻抗并保持卓越开
关性能而量身定制。
•
•
•
•
•
•
•
•
RDS(on) = 2.21 m ( Typ.) @ VGS = 10 V, ID = 100 A
低 FOM RDS(on) * QG
低反向恢复电荷， Qrr =112 nC
软反向恢复体二极管
可实现高效同步整流
应用
快速开关速度
100% 经过 UIL 测试
•
•
•
用于 ATX/ 服务器 / 电信 PSU 的同步整流
符合 RoHS 标准
电池保护电路
电机驱动和不间断电源
D
G
G
D
S
TO-220
S
MOSFET 最大额定值 TC = 25°C 除非另有说明。
FDP027N08B-F102
符号
参数
单位
VDSS
VGSS
80
±20
V
漏极－源极电压
栅极－源极电压
V
A
223*
158*
120
- 连续 （TC = 25°C，硅限制）
- 连续 （TC = 100°C，硅限制）
- 连续 （TC = 25°C，封装限制）
- 脉冲
ID
漏极电流
IDM
892
A
mJ
漏极电流
（说明 1）
（说明 2）
（说明 3）
EAS
dv/dt
917
单脉冲雪崩能量
二极管恢复 dv/dt 峰值
6.0
V/ns
W
(TC = 25°C)
246
PD
功耗
1.64
W/°C
°C
- 降低至 25°C 以上
TJ, TSTG
TL
-55 至 +175
300
工作和存储温度范围
°C
用于焊接的最大引线温度，距离外壳 1/8"，持续 5 秒
* 计算连续电流 （基于最高允许结温）。封装限制电流为 120 A。
热性能
FDP027N08B-F102
符号
参数
单位
RJC
RJA
结至外壳热阻最大值
结至环境热阻最大值
0.61
62.5
°C/W
Publication Order Number:
©2011 飞兆半导体公司
December-2017, Rev. 3
FDP027N08BCN/D
封装标识与定购信息
器件编号
顶标
FDP027N08B
封装
包装方法
塑料管
卷尺寸
带宽
数量
FDP027N08B-F102
TO-220
N/A
N/A
50 个
电气特性 TC = 25°C 除非另有说明。
符号
参数
测试条件
最小值 典型值 最大值
单位
关断特性
BVDSS
I
D = 250 A，VGS = 0 V
ID = 250 A，参考温度为 25°C
DS = 64 V，VGS = 0 V
VDS = 64 V，TC = 150°C
GS = ±20 V，VDS = 0 V
80
-
-
-
-
V
漏极 - 源极击穿电压
BVDSS
/ TJ
击穿电压温度系数
0.05
V/°C
V
-
-
-
-
-
-
1
IDSS
IGSS
A
零栅极电压漏极电流
500
±100
V
nA
栅极 - 体漏电流
导通特性
VGS(th)
RDS(on)
gFS
VGS = VDS，ID = 250 A
VGS = 10 V，ID = 100 A
VDS = 10 V，ID = 100 A
2.5
-
4.5
2.7
-
V
m
S
栅极阈值电压
-
-
2.21
227
漏极至源极静态导通电阻
正向跨导
动态特性
Ciss
-
-
-
-
-
-
-
-
-
10170
1670
35
13530
pF
pF
pF
pF
nC
nC
nC
nC
输入电容
V
DS = 40 V，VGS = 0 V，
Coss
2220
输出电容
f = 1 MHz
Crss
-
反向传输电容
Coss(er)
Qg(tot)
Qgs
VDS = 40 V，VGS = 0 V
3025
137
56
-
能量相关输出电容
10 V 的栅极电荷总量
栅极 - 源极栅极电荷
栅极平台电荷阈值
栅极 - 漏极 “ 米勒 ” 电荷
等效串联电阻 (G-S)
178
VDS = 40 V，VGS = 10 V，
ID = 100A
-
-
-
-
Qgs2
25
Qgd
28
（说明 4）
ESR
f = 1 MHz
2.4
开关特性
td(on)
tr
td(off)
tf
-
-
-
-
47
66
87
41
104
142
184
92
ns
ns
ns
ns
导通延迟时间
开通上升时间
关断延迟时间
关断下降时间
VDD = 40 V，ID = 100 A，
V
GS = 10 V，RG = 4.7
（说明 4）
漏极 - 源极二极管特性
IS
-
-
-
-
-
-
-
223*
892
1.3
-
A
A
漏极 - 源极二极管最大正向连续电流
ISM
VSD
trr
漏极 - 源极二极管最大正向脉冲电流
漏极 - 源极二极管正向电压
反向恢复时间
VGS = 0 V，ISD = 100 A
GS = 0 V，VDD = 40 V，ISD = 100 A，
dIF/dt = 100 A/s
-
V
80
112
ns
nC
V
Qrr
-
反向恢复电荷
注意：
1. 重复额定值：脉冲宽度受限于最大结温。
2. L = 3 mH， I = 24.72 A， R = 25 ，开始 T = 25°C。
AS
G
J
3. I 100 A， di/dt 200 A/s， V BV
，开始 T = 25°C。
SD
DD
DSS
J
4. 本质上独立于工作温度的典型特性。
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2
典型性能特征
图 1. 导通区域特性
图 2. 传输特性
500
500
*Notes:
1. VDS = 10V
2. 250s Pulse Test
100
10
1
175oC
100
25oC
VGS = 15.0V
10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
*Notes:
1. 250s Pulse Test
2. TC = 25oC
10
5
-55oC
0.1
1
4
2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
VGS, Gate-Source Voltage[V]
VDS, Drain-Source Voltage[V]
图 3. 导通电阻变化与漏极电流和
栅极电压的关系
图 4. 体二极管正向电压变化与源极电流
和温度的关系
3.0
500
2.5
100
VGS = 10V
25oC
175oC
2.0
VGS = 20V
10
1
1.5
*Notes:
1. VGS = 0V
*Note: TC = 25oC
300 400
2. 250s Pulse Test
1.0
0
100
200
ID, Drain Current [A]
500
0.2
0.4
0.6
0.8
1.0
1.2 1.3
VSD, Body Diode Forward Voltage [V]
图 5. 电容特性
30000
图 6. 栅极电荷特性
10
10000
VDS = 16V
DS = 40V
DS = 64V
8
6
4
2
0
Ciss
V
V
1000
Coss
*Note:
1. VGS = 0V
100
10
2. f = 1MHz
Crss
C
C
C
= C + C (C = shorted)
gs gd ds
iss
= C + C
ds gd
oss
rss
= C
gd
*Note: ID = 100A
90 120 150
0
30
60
0.1
1
10
80
Qg, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
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3
典型性能特性 （接上页）
图 7. 击穿电压变化与温度的关系
图 8. 导通电阻变化与温度的关系
2.0
1.08
1.04
1.00
0.96
0.92
1.5
1.0
*Notes:
1. VGS = 10V
*Notes:
1. VGS = 0V
2. ID = 100A
2. ID = 250A
0.5
-100
-50
0
50
100
150
200
-80
-40
0
40
80
120 160 200
o
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
图 9. 最大安全工作区
图 10. 最大漏极电流与壳温的关系
2000
1000
250
VGS= 10V
10us
200
100
100us
150
100
50
1ms
10ms
DC
10
Operation in This Area
is Limited by R DS(on)
1
*Notes:
1. TC = 25oC
2. TJ = 175oC
0.1
R
JC= 0.61oC/W
3. Single Pulse
0
25
0.01
50
75
100
125
150
175
1
10
VDS, Drain-Source Voltage [V]
100 200
o
TC, Case Temperature [ C]
图 11. Eoss 与漏源极电压的关系
图 12. 非箝位感性开关能力
6
5
4
3
2
1
0
200
100
TJ = 25 oC
TJ = 150 o
C
10
1
0.001 0.01
0
20
40
60
80
0.1
1
10
100
1000
VDS, Drain to Source Voltage [V]
tAV, TIME IN AVALANCHE (ms)
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4
典型性能特性 （接上页）
图 13. 瞬态热响应曲线
1
0.5
0.2
0.1
PDM
0.1
t1
0.05
t2
*Notes:
0.02
0.01
1. ZJC(t) = 0.61oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
Single pulse
0.01
0.005
10-5
10-4
10-3
1，矩形脉冲持续时间 [ 秒 ]
10-2
10-1
1
t
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5
I = 常量
G
图 14. 栅极电荷测试电路与波形
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
图 15. 阻性开关测试电路与波形
VGS
图 16. 非箝位电感开关测试电路与波形
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6
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
图 17. 二极管恢复 dv/dt 峰值测试电路与波形
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7
机械尺寸
图 18. TO-220 模塑 3 引线 Jedec 变体 AB (Delta)
封装图纸作为一项服务，提供给考虑飞兆半导体元件的客户。具体参数可能会有变化，且不会做出相应通知。请注意图纸上的版本和 /
或日期，并联系飞兆半导体代表核实或获得最新版本。封装规格并不扩大飞兆公司全球范围内的条款与条件，尤其是其中涉及飞兆公司
产品保修的部分。
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8
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相关型号：
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FAIRCHILD
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