FDMS9620S [ONSEMI]
双 N 沟道，PowerTrench® MOSFET，30V;
| 型号： | FDMS9620S |
| 厂家： | 
ONSEMI |
| 描述： | 双 N 沟道，PowerTrench® MOSFET，30V 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总10页 (文件大小：397K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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May 2014
FDMS9620S
Dual N-Channel PowerTrench® MOSFETꢀ
Q1: 30V, 16A, 21.5mꢁꢀꢀQ2: 30V, 18A, 13mꢁ
Features
Q1: N-Channel
General Description
Max rDS(on) = 21.5mꢁ at VGS = 10V, ID = 7.5A
Max rDS(on) = 29.5mꢁ at VGS = 4.5V, ID = 6.5A
This device includes two specialized MOSFETs in a unique dual
Power 56 package. It is designed to provide an optimal
Synchronous Buck power stage in terms of efficiency and PCB
utilization. The low switching loss "High Side" MOSFET is
complementedbyaLowConductionLoss "LowSide" SyncFET.
Q2: N-Channel
Max rDS(on) = 13mꢁ at VGS = 10V, ID = 10A
Max rDS(on) = 17mꢁ at VGS = 4.5V, ID = 8.5A
Low Qg high side MOSFET
Applications
Low rDS(on) low side MOSFET
Thermally efficient dual Power 56 package
Pinout optimized for simple PCB design
RoHS Compliant
Synchronous Buck Converter for:
Notebook System Power
General Purpose Point of Load
G1
D1
S2
S2
S2
G2
D1
D1
D1
G1
5
6
7
8
4
3
2
1
D1
D1
D1
S1/D2
G2
S2
S2
S2
Power 56
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
Parameter
Q1
30
20
16
7.5
60
Q2
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
30
20
18
10
60
Drain Current
-Continuous
TC = 25°C
TA = 25°C
-Continuous
-Pulsed
(Note 1a)
ID
A
Power Dissipation for Single Operation
TA = 25°C
TA = 25°C
(Note 1a)
(Note 1b)
2.5
1
PD
W
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RꢂJC
RꢂJA
RꢂJA
Thermal Resistance, Junction to Case
8.2
3.1
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1a)
(Note 1b)
50
°C/W
120
Package Marking and Ordering Information
Device Marking
FDMS9620S
Device
FDMS9620S
Package
Power 56
Reel Size
Tape Width
12mm
Quantity
3000 units
13”
1
©2007 Fairchild Semiconductor Corporation
FDMS9620S Rev.D3
www.fairchildsemi.com
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Units
Off Characteristics
I
I
D = 250ꢃA, VGS = 0V
D = 1mA, VGS = 0V
Q1
Q2
30
30
BVDSS
Drain to Source Breakdown Voltage
V
mV/°C
ꢃA
ꢄBVDSS
ꢀꢀꢀꢄTJ
Breakdown Voltage Temperature
Coefficient
ID = 250ꢃA, referenced to 25°C
D = 1mA, referenced to 25°C
Q1
Q2
Q1
Q2
Q1
Q2
23
23
I
1
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = 24V, VGS = 0V
VGS 20V, VDS= 0V
500
100
100
=
nA
On Characteristics
V
V
GS = VDS, ID = 250ꢃA
GS = VDS, ID = 1mA
Q1
Q2
1
1
1.6
1.6
3
3
VGS(th)
Gate to Source Threshold Voltage
V
ꢀꢄVGS(th)
ꢀꢀꢀꢄTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250ꢃA, referenced to 25°C
D = 1mA, referenced to 25°C
Q1
Q2
-4
-4
mV/°C
I
VGS = 10V, ID = 7.5A
18
23
25
9
13
14
21.5
29.5
32
13
17
22
V
V
GS = 4.5V, ID = 6.5A
Q1
Q2
GS = 10V, ID = 7.5A , TJ = 125°C
rDS(on)
Drain to Source On Resistance
mꢁ
V
V
V
GS = 10V, ID = 10A
GS = 4.5V, ID = 8.5A
GS = 10V, ID = 10A , TJ = 125°C
V
V
DD = 10V, ID = 7.5A
DD = 10V, ID = 10A
Q1
Q2
25
27
gFS
Forward Transconductance
S
Dynamic Characteristics
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
500
700
100
500
65
100
665
935
135
665
100
150
Ciss
Coss
Crss
Rg
Input Capacitance
pF
pF
pF
ꢁ
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 15V, VGS = 0V, f = 1MHZ
f = 1MHz
0.9
1.8
Switching Characteristics
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
11
15
7
13
23
27
2.3
7
20
27
14
24
37
44
10
14
td(on)
tr
td(off)
tf
Turn-On Delay Time
ns
ns
ns
ns
nC
nC
Rise Time
V
V
DD = 15V, ID = 1A,
GS = 10V, RGEN = 6ꢁ
Turn-Off Delay Time
Fall Time
Q1
Q1
Q2
Q1
Q2
10
18
1.7
2.8
14
25
Qg
Total Gate Charge
Gate to Source Gate Charge
V
DD = 15V, VGS = 10V ,ID = 7.5A
Qgs
Q2
VDD = 15V, VGS = 10V ,ID = 10A
Q1
Q2
2.0
3.6
Qgd
Gate to Drain “Miller” Charge
nC
©2007 Fairchild Semiconductor Corporation
FDMS9620S Rev.D3
www.fairchildsemi.com
2
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Units
Drain-Source Diode Characteristics
Q1
Q2
2.1
3.5
IS
Maximum Continuous Drain-Source Diode Forward Current
A
V
V
V
GS = 0V, IS = 2.1A
GS = 0V, IS = 3.5A
(Note 2) Q1
(Note 2) Q2
0.7
0.5
13
14
4
9
1.2
1.0
VSD
trr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Q1
Q2
Q1
Q2
Q1
F = 7.5A, di/dt = 100A/ꢃs
Q2
F = 10A, di/dt = 300A/ꢃs
ns
nC
I
Qrr
Reverse Recovery Charge
I
Notes:
2
1: R
is determined with the device mounted on a 1in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R is determined by
ꢂCA
ꢂJA
ꢂJC
the user's board design.
b. 120°C/W when mounted on a
minimum pad of 2 oz copper
a.50°C/W when mounted on
2
a 1 in padof 2oz copper
2: Pulse Test: Pulse Width < 300ꢃs, Duty cycle < 2.0%.
©2007 Fairchild Semiconductor Corporation
FDMS9620S Rev.D3
www.fairchildsemi.com
3
Typical Characteristics (Q1 N-Channel)TJ = 25°C unless otherwise noted
60
50
40
30
20
10
0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
VGS = 10V
PULSE DURATION = 300ꢃs
VGS = 6V
DUTY CYCLE = 2.0%MAX
VGS = 4.5V
VGS = 4V
VGS =3.5V
VGS = 4V
VGS = 4.5V
VGS = 6V
VGS = 3.5V
PULSE DURATION = 300ꢃs
DUTY CYCLE = 2.0%MAX
VGS = 10V
0
1
2
3
4
0
10
20
30
40
50
60
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT(A)
Figure 1. On Region Characteristics
Figure2. NormalizedOn-Resistance
vs Drain Current and Gate Voltage
1.6
70
60
50
40
30
20
10
ID = 7.5A
GS =10V
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
PULSE DURATION = 300ꢃs
DUTY CYCLE = 2.0%MAX
V
ID = 3.8A
TJ = 125oC
TJ = 25oC
-50 -25
0
25
50
75
100 125 150
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs Junction Temperature
Figure 4. On-Resistance vs Gate to
Source Voltage
40
60
10
PULSE DURATION = 300ꢃs
VGS = 0V
DUTY CYCLE = 2.0%MAX
VDD = 5V
30
TJ = 125oC
1
0.1
20
TJ = 25oC
TJ =125oC
10
TJ = 25oC
0.01
TJ = -55oC
TJ = -55oC
0
0.001
1
2
3
4
5
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. SourcetoDrain Diode
Forward Voltage vs Source Current
©2007 Fairchild Semiconductor Corporation
FDMS9620S Rev.D3
www.fairchildsemi.com
4
Typical Characteristics (Q1 N-Channel)TJ = 25°C unless otherwise noted
10
1000
ID = 7.5A
VDD =10V
8
Ciss
VDD = 15V
6
Coss
VDD = 20V
4
100
30
2
f = 1MHz
= 0V
Crss
V
GS
0
30
0
2
4
6
8
10
12
0.1
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE(nC)
g
Figure 7. Gate Charge Characteristics
Figure8. CapacitancevsDrain
to Source Voltage
100
100
10
VGS = 10V
10
1
1ms
SINGLE PULSE
10ms
T
= MAX RATE
J
R
ꢂJA = 120oC
100ms
1s
T
= 25oC
SINGLE PULSE
A
R
ꢂJA = 120oC/W
0.1
THIS AREA IS LIMITED
BY rDS(ON)
10s
DC
TA= 25oC
1
0.5
0.01
10-3
10-2
10-1
t, PULSE WIDTH (sec)
1
10
100
1000
0.1
1
10
100
VDS, DRAIN to SOURCE VOLTAGE (V)
F i g u r e 9 . F o r w a r d B i a s S a f e
Operating Area
Figure 10. Single Pulse Maximum
Power Dissipation
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
P
DM
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
SINGLE PULSE
R
1
2
ꢂJA = 120oC/W
PEAK T = P
x Z
x R
+ T
J
DM
ꢂJA
ꢂJA A
0.01
10-3
10-2
10-1
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 11. Transient Thermal Response Curve
©2007 Fairchild Semiconductor Corporation
FDMS9620S Rev.D3
www.fairchildsemi.com
5
Typical Characteristics (Q2 SyncFET)
60
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
VGS = 10V
PULSE DURATION = 300ꢃs
DUTY CYCLE = 2.0%MAX
VGS = 4V
VGS = 4.5V
VGS = 6V
VGS =3.5V
50
40
30
20
10
0
VGS = 4V
VGS = 4.5V
VGS = 3.5V
VGS = 6V
PULSE DURATION = 300ꢃs
DUTY CYCLE = 2.0%MAX
VGS = 10V
0.0
0.5
1.0
1.5
2.0
2.5
0
10
20
30
40
50
60
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT(A)
Figure 12. On-Region Characteristics
Figure 13. Normalized on-Resistance vs Drain
Current and Gate Voltage
1.8
60
ID = 10A
VGS =10V
PULSE DURATION = 300ꢃs
ID = 5A
DUTY CYCLE = 2.0%MAX
1.6
1.4
1.2
1.0
0.8
0.6
50
40
30
TJ = 125oC
20
10
TJ = 25oC
0
-50 -25
0
25
50
75
100 125 150
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 15. On-Resistance vs Gate to
Source Voltage
Figure 14. Normalized On-Resistance
vs Junction Temperature
10
60
VGS = 0V
PULSE DURATION = 300ꢃs
DUTY CYCLE = 2.0%MAX
50
VDD = 5V
40
1
0.1
TJ = 125oC
30
TJ = 25oC
TJ =125oC
20
10
0
0.01
TJ = 25oC
TJ = -55oC
TJ = -55oC
0.001
0.0
0.2
0.4
0.6
0.8
1
2
3
4
5
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 16. Transfer Characteristics
Figure 17. Source to Drain Diode
Forward Voltage vs Source Current
©2007 Fairchild Semiconductor Corporation
FDMS9620S Rev.D3
www.fairchildsemi.com
6
Typical Characteristics
10
2000
1000
ID = 10A
VDD =10V
Ciss
8
6
4
2
0
VDD = 15V
Coss
VDD = 20V
f = 1MHz
= 0V
100
50
V
GS
Crss
10
30
0.1
1
0
4
8
12
16
20
VDS, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE(nC)
g
Figure 19. Capacitance vs Drain
to Source Voltage
Figure 18. Gate Charge Characteristics
©2007 Fairchild Semiconductor Corporation
FDMS9620S Rev.D3
www.fairchildsemi.com
7
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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