FDMS86163P [ONSEMI]
P 沟道，PowerTrench® MOSFET，-100V，-50A，22mΩ;
| 型号： | FDMS86163P |
| 厂家： | 
ONSEMI |
| 描述： | P 沟道，PowerTrench® MOSFET，-100V，-50A，22mΩ 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：483K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – P-Channel,
POWERTRENCH)
BV
R
MAX
I MAX
D
DSS
DS(ON)
−100 V
22 mW @ −10 V
−50 A
-100 V, -50 A, 22 mW
Top
Bottom
S
Pin 1
G
FDMS86163P
S
S
General Description
D
D
This P−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been especially tailored to
minimize the on−state resistance and yet maintain superior switching
performance.
D
D
Power 56
PQFN8
CASE 483AE
Features
MARKING DIAGRAM
• Max r
• Max r
= 22 mW at V = −10 V, I = −7.9 A
GS D
DS(on)
DS(on)
= 30 mW at V = −6 V, I = −5.9 A
GS
D
$Y&Z&3&K
FDMS
86163P
• Very Low RDS−on Mid Voltage P−Channel Silicon Technology
Optimised for Low Qg
• This Product is Optimised for Fast Switching Applications
As Well As Load Switch Applications
• 100% UIL Tested
• This Device is Pb−Free, Halogen Free/BFR Free and is RoHS
Compliant
$Y
&Z
&3
&K
= onsemi Logo
= Assembly Location
= 3−Digit Date Code
= Lot Code
Applications
• Active Clamp Switch
• Load Switch
FDMS86163P = Specific Device Code
PIN CONNECTION
MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Parameter
Parameter
Symbol
Value
−100
25
Unit
V
S
S
S
G
1
2
3
4
8
7
D
D
D
D
Drain−to−Source Voltage
Gate−to−Source Voltage
V
DS
V
GS
V
Drain Current −Continuous T = 25°C
I
D
−50
−7.9
−100
A
C
6
5
−Continuous T = 25°C (Note 1a)
A
−Pulsed (Note 4)
Single Pulse Avalanche Energy (Note 3)
E
AS
486
mJ
W
Power Dissipation
T
= 25°C
P
D
104
2.5
C
T = 25°C (Note1a)
A
ORDERING INFORMATION
Operating and Storage Junction Temperature
Range
T , T
−55 to
+150
°C
J
STG
†
Device
Package
Shipping
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
FDMS86163P
PQFN−8
(Pb−Free)
3000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
October, 2021 − Rev. 3
FDMS86163P/D
FDMS86163P
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
1.2
Unit
Thermal Resistance, Junction to Case
Thermal Resistance Junction to Ambient (Note 1a)
°C/W
R
q
JC
JA
R
50
q
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
B
Drain to Source Breakdown Voltage
I
I
= −250 mA, V = 0 V
−100
−
−
−
V
VDSS
D
GS
DBV
DT
/
Breakdown Voltage Temperature
Coefficient
= −250 mA, Referenced to 25°C
−
−59
mV/°C
DSS
D
J
DSS
GSS
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= −80 V, V = 0 V
−
−
−
−
−1
mA
DS
GS
I
=
25 V, V = 0 V
100
nA
GS
DS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
V
I
= V , I = −250 mA
−2
−2.8
−4
V
GS(th)
GS
DS
D
DV
/
Gate to Source Threshold Voltage
Temperature Coefficient
= −250 mA, Referenced to 25°C
−
6.2
−
mV/°C
GS(th)
D
DT
J
r
Static Drain to Source On Resistance
Forward Transconductance
V
GS
V
GS
V
GS
V
DS
= −10 V, I = −7.9 A
−
−
−
−
17.8
21.3
29
22
30
36
−
mW
DS(on)
D
= −6 V, I = −5.9 A
D
= −10 V, I = −7.9 A, T = 125°C
D
J
g
FS
= −10 V, I = −7.9 A
29
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= −50 V, V = 0 V, f = 1 MHz
−
−
3070
501
21
4085
670
35
pF
iss
GS
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
−
rss
R
0.1
2.6
5.3
W
g
SWITCHING CHARACTERISTICS
t
Turn−On Delay
V
V
= −50 V, I = −7.9 A,
−
−
−
−
−
−
−
−
17
8.8
33
30
18
53
14
59
37
−
ns
d(on)
DD
GS
D
= −10 V, R
= 6 W
GEN
t
r
Rise Time
t
Turn−Off Delay
d(off)
t
f
Fall Time
6.9
42
Q
Q
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V
GS
V
GS
V
DD
= 0 V to −10 V
= 0 V to −6 V
V = −50 V,
DD
nC
g
g
I
D
= −7.9 A
26
Q
= −50 V, I = −7.9 A
11.8
7.1
gs
gd
D
Q
−
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2
FDMS86163P
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified) (continued)
J
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
DRAIN−SOURCE DIODE CHARACTERISTICS
V
Source to Drain Diode Forward
Voltage
V
V
= 0 V, I = −7.9 A (Note 2)
−
−
−
−
−0.81
−0.75
63
−1.3
−1.2
102
210
V
SD
GS
S
= 0 V, I = −2 A (Note 2)
GS
S
t
Reverse Recovery Time
I = −7.9 A, di/dt = 100 A/ms
F
ns
rr
Q
Reverse Recovery Charge
132
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. R
is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. R
is guaranteed
q
q
JA
JC
by design while R
is determined by the user’s board design.
q
CA
b) 50°C/W when mounted on
a minimum pad of 2 oz copper
a) 50°C/W when mounted on
2
a 1 in pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. Starting T = 25°C; P−ch: L = 3 mH, I = −18 A, V = −100 V, V = −10 V. 100% test at L = 0.1 mH, I = −58 A.
J
AS
DD
GS
AS
4. Pulse Id refers to Figure 11. Forward Bias Safe Operation Area.
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3
FDMS86163P
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
100
80
60
40
20
0
4
V
= −6 V
V
GS
= −10 V
GS
V
= −4.5 V
GS
V
= −5 V
GS
3
2
1
0
V
= −5.5 V
GS
V
GS
= −5.5 V
V
= −5 V
GS
V
GS
= −6 V
V
GS
= −10 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% Max
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% Max
V
GS
= −4.5 V
0
1
2
3
4
5
0
20
40
60
80
100
−V , DRAIN TO SOURCE VOLTAGE (V)
DS
−I , DRAIN CURRENT (A)
D
Figure 2. Normalized On−Resistance vs. Drain
Figure 1. On Region Characteristics
Current and Gate Voltage
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
80
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% Max
I
V
= −7.9 A
D
= −10 V
GS
60
40
20
0
I
D
= −7.9 A
T = 125°C
J
T = 25°C
J
−75 −50 −25
0
25 50 75 100 125 150
10
3
4
5
6
7
8
9
−V , GATE TO SOURCE VOLTAGE (V)
GS
T , JUNCTION TEMPERATURE (°C)
J
Figure 4. On−Resistance vs. Gate to
Figure 3. Normalized On Resistance
vs. Junction Temperature
Source Voltage
100
10
100
80
60
40
20
0
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% Max
V
GS
= 0 V
V
DS
= −5 V
T = 150°C
J
1
T = 25°C
J
T = 150°C
J
0.1
T = 25°C
J
0.01
T = −55°C
J
T = −55°C
J
0.001
2
3
4
5
6
7
0.0
0.2
0.4
0.6
0.8
1.0
1.2
−V , GATE TO SOURCE VOLTAGE (V)
GS
−V , BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs. Source Current
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4
FDMS86163P
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
10000
10
8
I
D
= −7.9 A
C
C
V
DD
= −50 V
iss
V
DD
= −75 V
V
DD
= −25 V
1000
100
10
6
oss
4
2
C
f = 1 MHz
= 0 V
rss
V
GS
0
0
10
20
30
40
50
0.1
1
10
100
−V , DRAIN TO SOURCE VOLTAGE (V)
DS
Q , GATE CHARGE (nC)
g
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain to Source Voltage
100
10
1
60
50
40
30
20
10
0
R
= 1.2°C/W
q
JC
T = 25°C
J
T = 100°C
J
V
= −10 V
GS
V
GS
= −6 V
T = 125°C
J
0.001 0.01
0.1
10
100
1000
1
25
50
75
100
125
150
t , TIME IN AVALANCHE (ms)
AV
T , CASE TEMPERATURE (°C)
C
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
Figure 9. Unclamped Inductive Switching
Capability
20000
10000
500
100
SINGLE PULSE
R
= 1.2°C/W
q
JC
10 ms
T
C
= 25°C
100 ms
10
1
1000
THIS AREA IS
LIMITED BY r
1 ms
DS(on)
10 ms
SINGLE PULSE
T = MAX RATED
J
DC
CURVE BENT TO
MEASURED DATA
R
= 1.2°C/W
q
JC
100
50
T
C
= 25°C
0.1
−5
−4
−3
−2
−1
1
10
100 200
10
10
10
10
10
1
−V , DRAIN TO SOURCE VOLTAGE (V)
DS
t, PULSE WIDTH (s)
Figure 12. Single Pulse Maximum Power
Dissipation
Figure 11. Forward Bias Safe Operating Area
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5
FDMS86163P
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.50
0.20
0.10
0.05
0.02
0.01
P
DM
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
x R
SINGLE PULSE
PEAK T = P
x Z
+ T
JC C
q
q
J
DM
JC
0.01
0.005
−5
−4
3
2
1
10
10
10−
10−
10−
1
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Junction−to−Case Transient Thermal Response Curve
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PQFN8 5X6, 1.27P
CASE 483AE
ISSUE C
DATE 21 JAN 2022
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13655G
PQFN8 5X6, 1.27P
PAGE 1 OF 1
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
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