FDMS86152 [ONSEMI]
N 沟道,PowerTrench® MOSFET,100V,45A,6mΩ;型号: | FDMS86152 |
厂家: | ONSEMI |
描述: | N 沟道,PowerTrench® MOSFET,100V,45A,6mΩ |
文件: | 总8页 (文件大小:355K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Is Now Part of
To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please
email any questions regarding the system integration to Fairchild_questions@onsemi.com.
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
March 2015
FDMS86152
N-Channel PowerTrench® MOSFET
100 V, 45 A, 6 mΩ
Features
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process thant has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Max rDS(on) = 6 mΩ at VGS = 10 V, ID = 14 A
Max rDS(on) = 11 mΩ at VGS = 6 V, ID = 11.5 A
Advanced Package and Silicon combination for low rDS(on)
and high efficiency
MSL1 robust package design
100% UIL tested
Applications
Primary DC-DC MOSFET
Secondary Synchronous Rectifier
Load Switch
RoHS Compliant
Bottom
Top
Pin 1
S
D
D
D
D
S
S
S
Pin 1
G
S
S
G
D
D
D
D
Power 56
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
100
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
V
V
±20
TC = 25 °C
TA = 25 °C
45
ID
(Note 1a)
(Note 3)
(Note 1a)
14
A
-Pulsed
260
EAS
Single Pulse Avalanche Energy
Power Dissipation
541
mJ
W
TC = 25 °C
TA = 25 °C
125
PD
Power Dissipation
2.7
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
1.0
45
°C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
13 ’’
Tape Width
12 mm
Quantity
FDMS86152
FDMS86152
Power 56
3000 units
©2013 Fairchild Semiconductor Corporation
FDMS86152 Rev.1.2
1
www.fairchildsemi.com
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
100
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
I
D = 250 μA, referenced to 25 °C
90
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = 80 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
1
μA
±100
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
2
3
4
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
I
D = 250 μA, referenced to 25 °C
GS = 10 V, ID = 14 A
-10
mV/°C
V
5.2
7.3
8.7
42
6
rDS(on)
gFS
Static Drain to Source On Resistance
Forward Transconductance
VGS = 6 V, ID = 11.5 A
11
10
mΩ
VGS = 10 V, ID = 14 A, TJ = 125 °C
VDS = 10 V, ID = 14 A
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
2530
595
22
3370
795
35
pF
pF
pF
Ω
VDS = 50 V, VGS = 0 V,
f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
0.9
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
17
6
30
12
39
10
50
33
ns
ns
VDD = 50 V, ID = 14 A,
VGS = 10 V, RGEN = 6 Ω
Turn-Off Delay Time
Fall Time
25
5
ns
ns
Qg
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VGS = 0 V to 10 V
VGS = 0 V to 6 V
36
23
10.7
7.2
nC
nC
nC
nC
Qg
VDD = 50 V,
D = 14 A
I
Qgs
Qgd
Drain-Source Diode Characteristics
V
GS = 0 V, IS = 2.1 A
(Note 2)
(Note 2)
0.70
0.78
59
1.2
1.3
94
VSD
Source to Drain Diode Forward Voltage
V
VGS = 0 V, IS = 14 A
trr
Reverse Recovery Time
ns
IF = 14 A, di/dt = 100 A/μs
Qrr
Reverse Recovery Charge
74
119
nC
Notes:
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R is determined by
θCA
θJA
θJC
the user's board design.
a. 45 °C/W when mounted on a
b. 115 °C/W when mounted on a
minimum pad of 2 oz copper.
2
1 in pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting T = 25 °C, L = 3 mH, I = 19 A, V = 100 V, V = 10 V. 100% test at L = 0.3 mH, I = 42 A.
J
AS
DD
GS
AS
©2013 Fairchild Semiconductor Corporation
FDMS86152 Rev.1.2
www.fairchildsemi.com
2
Typical Characteristics TJ = 25 °C unless otherwise noted
4
3
2
1
0
260
VGS = 8 V
VGS = 10 V
VGS = 5 V
VGS = 7 V
VGS = 6 V
195
130
65
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 7 V
VGS = 8 V
VGS = 6 V
VGS = 10 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 5 V
0
0
65
130
ID, DRAIN CURRENT (A)
195
260
0
1
2
3
4
5
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs Drain Current and Gate Voltage
2.2
30
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
ID = 14 A
ID = 14 A
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
25
20
15
10
5
VGS = 10 V
TJ = 125 o
C
TJ = 25 o
C
0
-75 -50 -25
0
25 50 75 100 125 150
4
5
6
7
8
9
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
F i gu re 3 . N orma li zed On - Res is ta nc e
vs Junction Temperature
Figure4. On-Resistance vs Gate to
Source Voltage
260
300
100
PULSE DURATION = 80 μs
VGS = 0 V
DUTY CYCLE = 0.5% MAX
195
130
65
10
VDS = 5 V
TJ = 150 o
C
1
TJ = 25 o
C
0.1
TJ = 150 o
C
TJ = -55 o
C
TJ = 25 o
C
0.01
0.001
TJ = -55 o
C
0
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
©2013 Fairchild Semiconductor Corporation
FDMS86152 Rev.1.2
www.fairchildsemi.com
3
Typical Characteristics TJ = 25 °C unless otherwise noted
5000
1000
10
VDD = 50 V
ID = 14 A
Ciss
8
VDD = 25 V
VDD = 75 V
6
4
2
0
Coss
100
Crss
f = 1 MHz
GS = 0 V
V
10
0.1
1
10
100
0
10
20
Q , GATE CHARGE (nC)
30
40
VDS, DRAIN TO SOURCE VOLTAGE (V)
g
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
100
10
1
100
80
60
40
20
0
RθJC = 1.0 oC/W
VGS = 10 V
TJ = 25 o
C
VGS = 6 V
TJ = 100 oC
Limited by Package
TJ = 125 o
C
0.01
0.1
1
10
100200
25
50
75
100
125
150
tAV, TIME IN AVALANCHE (ms)
TC, CASE TEMPERATURE (oC)
Figure9. U n c l a m p e d I n d u c t i v e
Switching Capability
Figure10. Maximum Continuous Drain
Current vs Case Temperature
1000
100
10
10000
THIS AREA IS
LIMITED BY rDS(on)
SINGLE PULSE
θJA = 115 oC/W
TA = 25 oC
R
100 μs
1000
100
10
1 ms
10 ms
100 ms
1
SINGLE PULSE
TJ = MAX RATED
R
θJA = 115oC/W
TA = 25 oC
0.1
0.01
1 s
CURVE BENT TO
MEASURED DATA
10 s
DC
1
0.5
10-4
10-3
10-2
t, PULSE WIDTH (sec)
10-1
1
10
0.01
0.1
1
10
100
600
100 1000
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
Figure 12. Single Pulse Maximum
Power Dissipation
©2013 Fairchild Semiconductor Corporation
FDMS86152 Rev.1.2
www.fairchildsemi.com
4
Typical Characteristics TJ = 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
0.1
P
DM
0.02
0.01
t
1
0.01
t
2
NOTES:
Z
(t) = r(t) x R
= 115 °C/W
θJA
θJA
0.001
R
SINGLE PULSE
θJA
Peak T = P
x Z (t) + T
θJA A
J
DM
Duty Cycle, D = t / t
1
2
0.0001
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (sec)
1
10
100
1000
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
©2013 Fairchild Semiconductor Corporation
FDMS86152 Rev.1.2
www.fairchildsemi.com
5
5.10
4.90
A
4.42
3.81
PKG
C
L
B
7
6
5
8
8
5
1.14
KEEP OUT AREA
3.65
6.25
5.90
C
PKG
L
6.61
4.79
1.27
1
4
PIN #1
IDICATOR
TOP VIEW
SIDE VIEW
1
2
1.27
3
4
0.61
SEE
DETAIL A
3.81
5.10
LAND PATTERN
RECOMMENDATION
3.81
1.27
0.10
C A B
0.47
0.37
(0.38)
(8X)
1
4
(0.35)
0.65
0.55
NOTES: UNLESS OTHERWISE SPECIFIED
A) PACKAGE STANDARD REFERENCE:
JEDEC MO-240, ISSUE A, VAR. AA,
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS DO NOT INCLUDE BURRS
OR MOLD FLASH. MOLD FLASH OR
PIN #1
INDICATOR
4.66
4.46
BURRS DOES NOT EXCEED 0.10MM.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M-2009.
E) IT IS RECOMMENDED TO HAVE NO TRACES
OR VIAS WITHIN THE KEEP OUT AREA.
F) DRAWING FILE NAME: PQFN08JREV3.
8
5
0.70
4.33
4.13
BOTTOM VIEW
0.10 C
1.10
0.90
0.08 C
C
0.05
0.00
0.25
0.15
SEATING
PLANE
SCALE: 2:1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
© Semiconductor Components Industries, LLC
www.onsemi.com
相关型号:
©2020 ICPDF网 联系我们和版权申明