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October 2014

FDMS7680

N-Channel PowerTrench^®MOSFET

30 V, 6.9 mΩ

Features

General Description

This N-Channel MOSFET has been designed specifically to

improve the overall efficiency and to minimize switch node

ringing of DC/DC converters using either synchronous or

conventional switching PWM controllers. It has been optimized

for low gate charge, low r_DS(on),fast switching speed and body

diode reverse recovery performance.

Max r_DS(on)= 6.9 mΩ at V_GS= 10 V, I_D= 14 A

Max r_DS(on)= 11 mΩ at V_GS= 4.5 V, I_D= 11 A

Advanced Package and Silicon combination for low r_DS(on)

and high efficiency

Next generation enhanced body diode technology, engineered

for soft recovery.

Applications

IMVP Vcore Switching for Notebook

VRM Vcore Switching for Desktop and Server

OringFET / Load Switch

MSL1 robust package design

100% UIL tested

RoHS Compliant

DC-DC Conversion

Top

Bottom

Pin 1

S

D

S

G

S

D

G

D

Power 56

MOSFET Maximum Ratings ^T_A= 25 °C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

30

V

Gate to Source Voltage

+/-20

V

Drain Current -Continuous (Package limited)

-Continuous (Silicon limited)

-Continuous

T_C= 25 °C

T_A= 25 °C

28

53

I_D

A

(Note 1a)

14

-Pulsed

80

(Note 4)

(Note 3)

E_AS

Single Pulse Avalanche Energy

Power Dissipation

29

33

mJ

W

T_C= 25 °C

T_A= 25 °C

P_D

Power Dissipation

(Note 1a)

2.5

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

3.7

50

°C/W

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

13 ’’

Tape Width

12 mm

Quantity

FDMS7680

Power 56

3000 units

FDMS7680 Rev.C3

www.fairchildsemi.com

1

Electrical Characteristics ^T_J^{= 25 °C unless otherwise noted}

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

BV_DSS

Drain to Source Breakdown Voltage

I_D= 250 µA, V_GS= 0 V

30

V

∆BV_DSS

∆T_J

Breakdown Voltage Temperature

Coefficient

I

_D= 250 µA, referenced to 25 °C

13

mV/°C

I_DSS

I_GSS

Zero Gate Voltage Drain Current

V_DS= 24 V, V_GS= 0 V

1

µA

Gate to Source Leakage Current, Forward V_GS= 20 V, V_DS= 0 V

100

nA

On Characteristics

V_GS(th)

Gate to Source Threshold Voltage

V_GS= V_DS, I_D= 250 µA

1.25

1.9

3.0

V

∆V_GS(th)

∆T_J

Gate to Source Threshold Voltage

Temperature Coefficient

I_D= 250 µA, referenced to 25 °C

-6

mV/°C

V

_GS= 10 V , I_D= 14 A

5.6

8.0

7.3

85

6.9

11

r_DS(on)

g_FS

Static Drain to Source On Resistance

Forward Transconductance

V_GS= 4.5 V, I_D= 11 A

mΩ

V_GS= 10 V, I_D= 14 A, T_J= 125 °C

V_DS= 5 V, I_D= 14 A

10.1

S

Dynamic Characteristics

C_iss

C_oss

C_rss

R_g

Input Capacitance

1390

430

60

1850

575

85

pF

Ω

V

_DS= 15 V, V_GS= 0 V,

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

f = 1 MHz

0.1

0.9

2.0

Switching Characteristics

t_d(on)

t_r

t_d(off)

t_f

Turn-On Delay Time

Rise Time

10

4

20

10

34

10

28

13

ns

nC

V_DD= 15 V, I_D= 14 A,

V_GS= 10 V, R_GEN= 6 Ω

Turn-Off Delay Time

Fall Time

21

3

Q_g

Total Gate Charge

Gate to Source Charge

Gate to Drain “Miller” Charge

V_GS= 0 V to 10 V

20

9

Q_g

V_GS= 0 V to 4.5 V

V

_DD= 15 V,

I_D= 14 A

Q_gs

Q_gd

4.6

2.3

nC

Drain-Source Diode Characteristics

V

_GS= 0 V, I_S= 2.1 A

(Note 2)

0.74

0.83

24

1.2

1.3

39

15

36

27

V_SD

Source to Drain Diode Forward Voltage

V

V_GS= 0 V, I_S= 14 A

t_rr

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Time

Reverse Recovery Charge

ns

nC

ns

I_F= 14 A, di/dt = 100 A/µs

Q_rr

t_rr

8

20

I_F= 14 A, di/dt = 300 A/µs

Q_rr

15

nC

Notes:

2

1. R

is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

is guaranteed by design while R is determined by

θCA

θJA

θJC

the user's board design.

a. 50 °C/W when mounted on a

b. 125 °C/W when mounted on a

minimum pad of 2 oz copper.

2

1 in pad of 2 oz copper.

2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.

3. Starting T = 25 °C, L = 0.3 mH, I = 14 A, V = 27 V, V = 10 V.

J

AS

DD

GS

4. Pulse Id refers to Figure.11 Forward Bias Safe Operation Area.

www.fairchildsemi.com

2

FDMS7680 Rev.C3

Typical Characteristics ^T_J^{= 25 °C unless otherwise noted}

80

8

7

6

5

4

3

2

1

0

V_GS= 10 V

PULSE DURATION = 80 µs

DUTY CYCLE = 0.5% MAX

V_GS= 3 V

V_GS= 4.5 V

V_GS= 4 V

60

V_GS= 3.5 V

40

20

0

V_GS= 4 V

PULSE DURATION = 80 µs

DUTY CYCLE = 0.5% MAX

V_GS= 3 V

V_GS= 4.5 V V_GS= 10 V

0

1

2

3

0

20

I_D

40

60

80

V_DS

,

DRAIN TO SOURCE VOLTAGE (V)

,

DRAIN CURRENT (A)

Figure 1. On Region Characteristics

Figure2. N o r m a l i z e d O n - R e s i s ta n c e

vs Drain Current and Gate Voltage

25

20

15

10

5

1.6

PULSE DURATION = 80

I_D= 14 A

µs

I_D= 14 A

_GS= 10 V

1.5

1.4

1.3

1.2

1.1

1.0

0.9

0.8

0.7

DUTY CYCLE = 0.5% MAX

V

T_J= 125 ^o

C

T_J= 25 ^o

C

0

2

4

6

8

10

-75 -50 -25

T_J

0

25 50 75 100 125 150

,

JUNCTION TEMPERATURE ( )

^oC

V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 3. Normalized On Resistance

vs Junction Temperature

Figure4. On-Resistance vs Gate to

Source Voltage

80

100

10

V_GS= 0 V

PULSE DURATION = 80 µs

DUTY CYCLE = 0.5% MAX

60

40

20

0

T_J= 150 ^o

C

V_DS= 5 V

T_J= 150 ^o

C

1

T_J= 25 ^oC

T_J= 25 ^o

C

0.1

T_J= -55 ^o

C

T_J= -55 ^o

C

0.01

1

2

3

4

5

0.2

0.4

0.6

0.8

1.0

1.2

V_GS, GATE TO SOURCE VOLTAGE (V)

V_SD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics

Figure6. Source to Drain Diode

Forward Voltage vs Source Current

www.fairchildsemi.com

3

FDMS7680 Rev.C3

Typical Characteristics ^T_J^{= 25 °C unless otherwise noted}

10

3000

1000

V_DD= 15 V

I_D= 14 A

C_iss

8

6

4

2

0

V_DD= 10 V

C_oss

V_DD= 20 V

100

30

C_rss

f = 1 MHz

= 0 V

V

GS

30

0

4

8

12

16

20

24

0.1

1

10

V_DS, DRAIN TO SOURCE VOLTAGE (V)

Q_g, GATE CHARGE (nC)

Figure 7. Gate Charge Characteristics

Figure8. C a p a c i t a n c e v s D r a i n

to Source Voltage

50

60

50

40

30

20

10

0

T_J= 25 ^o

C

10

T_J= 100 ^o

C

V_GS= 10 V

T_J= 125 ^o

C

Limited by Package

R_θJC= 3.7 ^oC/W

V_GS= 4.5 V

1

0.001

0.01

0.1

1

10

100

25

50

75

100

125

150

^oC

t_AV, TIME IN AVALANCHE (ms)

T_C,

CASE TEMPERATURE ( )

Figure9. U n c l a m p e d I n d u c t i v e

Switching Capability

Figure10. Maximum Continuous Drain

Current vs Case Temperature

500

100

100000

10 us

10000

1000

100

10

1

THIS AREA IS

LIMITED BY r_DS(on)

SINGLE PULSE

_θJC= 3.7 ^oC/W

_C= 25 ^oC

100 us

1 ms

R

T

10 ms

SINGLE PULSE

T_J= MAX RATED

100 ms/DC

R

_θJC= 3.7^oC/W

0.1

T_C= 25 ^oC

CURVE BENT TO

MEASURED DATA

0.1

10

0.01

-6

-5

10

-4

10

-3

10

-2

10

-1

10

1

0.1

1

10

100

V_DS, DRAIN to SOURCE VOLTAGE (V)

t, PULSE WIDTH(sec)

Figure12. Single Pulse Maximum

Power Dissipation

Figure 11. Forward Bias Safe

Operating Area

www.fairchildsemi.com

4

FDMS7680 Rev.C3

Typical Characteristics ^T_J^{= 25 °C unless otherwise noted}

2

DUTY CYCLE-DESCENDING ORDER

1

D = 0.5

0.2

P

DM

0.1

0.05

0.02

0.01

t

1

t

2

NOTES:

0.01

Z

(t) = r(t) x R

= 3.7 °C/W

θJC

SINGLE PULSE

R

θJC

R

_θJC= 3.7 ^oC/W

Peak T = P

x Z (t) + T

θJC C

J

DM

Duty Cycle, D = t / t

1

2

0.001

10^-6

10^-5

10^-4

t, RECTANGULAR PULSE DURATION (sec)

10^-3

10^-2

10^-1

1

Figure 13. Junction-to-Ambient Transient Thermal Response Curve

Figure 15.

16

12

8

di/dt = 300 A/µs

4

0

-4

0

20

40

60

80

100

120

TIME (ns)

Figure 14. Body Diode Reverse Recovery

Characteristics

www.fairchildsemi.com

FDMS7680 Rev.C3

5

PQFN8 5X6, 1.27P

CASE 483AE

ISSUE A

5.10

3.91

5.10

PKG

A

SEE

DETAIL B

1.27

6.61

C

L

B

8

7

6

5

8

5

0.77

4.52

3.75

5.85

5.65

C

PKG

6.15

L

KEEP OUT

AREA

1.27

1

4

1

2

3

4

TOP VIEW

0.61

1.27

3.81

LAND PATTERN

RECOMMENDATION

OPTIONAL DRAFT

ANGLE MAY APPEAR

ON FOUR SIDES

SEE

DETAIL C

5.00

4.80

OF THE PACKAGE

0.35

0.15

ꢀꢁꢂꢃ

0.10 C

0.30

0.05

0.00

SIDE VIEW

ꢀꢁꢂꢃ

8X

0.08 C

C

0.35

0.15

5.20

4.80

1.10

0.90

SEATING

PLANE

DETAIL C

DETAIL B

SCALE: 2:1

3.81

SCALE: 2:1

1.27

0.51

(8X)

0.31

NOTES: UNLESS OTHERWISE SPECIFIED

(0.34)

A. PACKAGE STANDARD REFERENCE: JEDEC MO-240,

ISSUE A, VAR. AA,.

0.10

C A B

1

2

3

4

B. DIMENSIONS DO NOT INCLUDE BURRS OR MOLD FLASH.

MOLD FLASH OR BURRS DOES NOT EXCEED 0.10MM.

C. ALL DIMENSIONS ARE IN MILLIMETERS.

0.76

0.51

(0.52)

D. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-2009.

E. IT IS RECOMMENDED TO HAVE NO TRACES OR

VIAS WITHIN THE KEEP OUT AREA.

6.25

5.90

+0.30

3.48

-0.10

(0.50)

(0.30)

(2X)

8

7

6

5

ꢀꢄꢅꢅꢀꢄꢂꢀ

+0.10

-0.15

0.20

(8X)

3.96

3.61

BOTTOM VIEW

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

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1


型号：	FDMS7680
厂家：	ONSEMI
描述：	N 沟道，PowerTrench® MOSFET，30V，6.9mΩ 开关脉冲光电二极管晶体管
文件：	总8页 (文件大小：400K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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