FDMQ8205 [ONSEMI]
GreenBridgeTM 2 系列高效桥式整流器;
| 型号： | FDMQ8205 |
| 厂家： | 
ONSEMI |
| 描述： | GreenBridgeTM 2 系列高效桥式整流器 |
| 文件： | 总11页 (文件大小：244K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
GreenBridget2 Series of
High-Efficiency Bridge
Rectifiers
FDMQ8205
WDFN12 5x4.5, 0.8P
CASE 511CS
General Description
FDMQ8205 is GreenBridge 2 series of quad MOSFETs for a bridge
application so that the input will be insensitive to the polarity of
a power source coupled to the device. Many known bridge rectifier
circuits can be configured using typical diodes. The conventional
diode bridge has relatively high power loss that is undesirable in many
applications. Especially, Power over Ethernet (PoE) Power Device
(PD) application requires high−efficiency bridges because it should be
operated with the limited power delivered from Power Source
Equipment (PSE) which is classified by IEEE802.3at. FDMQ8205 is
MARKING DIAGRAM
$Y&Z&2&K
FDMQ
8205
FDMQ8205 = Specific Device Code
$Y
&Z
&2
= onsemi Logo
configured with low R
dual P−ch MOSFETs and N−ch
DS(on)
= Assembly plant code
= Date Code format(Year and
Week)
MOSFETs so that it can reduce the power loss caused by the voltage
drop, compared to the conventional diode bridge. FDMQ8205 enables
the application to maximize the available power and voltage and to
eliminate the thermal design problems in PoE PD applications.
FDMQ8205 GreenBridge 2 is compatible with IEEE802.3at PoE
standard by not compromising detection and classification
requirement as well as small backfeed voltage.
&K
= Lot Run Traceability Code
ORDERING INFORMATION
See detailed ordering and shipping information on
page 9 of this data sheet.
Features
• Low Power Loss GreenBridge Replaces Diode Bridge
• Self Driving Circuitry for MOSFETs
• Low R
80 V Rated MOSFETs
DS(on)
• Maximizing Available Power and Voltage
• Eliminating Thermal Design Problems
• IEEE802.3at Compatible
♦ Meet Detection and Classification Requirement
♦ Work with 2 and 4−pair Architecture
♦ Small Backfeed Voltage
• Compact MLP 4.5 x 5 Package
• These Device is Pb−Free and Halogen Free.
Applications
• Power over Ethernet (PoE) Power Device (PD)
♦ IP Phones
♦ Network Cameras
♦ Wireless Access Points
♦ Thin Clients
♦ Microcell
♦ Femtocell
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
April, 2022 − Rev. 2
FDMQ8205/D
FDMQ8205
TYPICAL APPLICATION
RJ45
Connector
1
POUT
G3
G2
INPUT1
G1
FDMQ8205
2
3
VOUTP
INPUT2
G4
VOUT+
Isolated
DC/DC
Converter
0.1 mF
22 mF
TVS
PoE PD
Interface
VOUT−
6
4
NOUT
VOUTN
POUT
5
7
G3
G2
INPUT1
G1
FDMQ8205
INPUT2
G4
8
NOUT
Figure 1. Typical Application of Power Device for Power over Ethernet
BLOCK DIAGRAM
OUTP
OUTP
Q3
Q2
Gate
Gate
G2
G3
driven
driven
Q4
Q1
Gate
Gate
G1
G4
driven
driven
INPUT2
INPUT1
OUTN
OUTN
Figure 2. Block Diagram
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2
FDMQ8205
PIN CONFIGURATION
1
2
3
G1
G4
OUTN
OUTN
12
11
10
INPUT2
(16)
INPUT1
(13)
OUTN
OUTN
4
5
G2
G3
OUTP
OUTP
9
8
7
OUTP
INPUT2
(15)
INPUT1
(14)
6
OUTP
MLP 4.5x5
Figure 3. Pin Assignment (Bottom View)
PIN DESCRIPTION
Pin No.
Name
Description
1
G1
G2
G3
G4
Gate of Q1 N−ch MOSFET
Gate of Q2 P−ch MOSFET
Gate of Q3 P−ch MOSFET
Gate of Q4 N−ch MOSFET
Input1 of GreenBridge
4
9
12
13, 14
15, 16
2, 3, 11, 10
5, 6, 7, 8
INPUT1
INPUT2
OUTN
Input2 of GreenBridge
Negative Output of GreenBridge
Positive Output of GreenBridge
OUTP
1. Show the feature that provides orientation or pin 1 location.
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3
FDMQ8205
ABSOLUTE MAXIMUM RATINGS
Min
−
Max
80
Unit
V
INPUT1, INPUT2 to OUTN
OUTP to INPUT1, INPUT2
INPUT1 to INPUT2
−
80
V
−
80
V
INPUT2 to INPUT1
−
80
V
OUTP to OUTN
−
80
V
G1, G2, G3, G4 to OUTN
OUTP to G1, G2, G3, G4
VG_TRANSIENT
−
70
V
−
70
V
Transient Gate Voltage, Pulse Width < 200 ms,
Duty Cycle < 0.003%
−
100
V
Continuous I
(GreenBridge Current,
T = 25°C (Note 2a)
−
−
−
−
−
−
3.0
1.7
58
A
A
INPUT
A
Q1 + Q3 or Q2 + Q4)
T = 25°C (Note 2b)
A
Pulsed I (Q1 + Q3 or Q2 + Q4)
Pulse Width < 300 ms, Duty Cycle < 2% (Note 3)
A
INPUT
P
D
(Power Dissipation, Q1 + Q3 or Q2 + Q4)
T = 25°C (Note 2a)
A
2.5
0.78
150
W
W
°C
T = 25°C (Note 2b)
A
Max Junction Temperature
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
2
2. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. R
is guaranteed
JC
q
q
JA
by design while R
is determined by the user’s board design.
q
CA
2
a. 50°C/W when mounted on a 1 in pad of
2 oz copper, the board designed Q1 + Q3
or Q2 + Q4.
b. 160°C/W when mounted on a minimum
pad of 2 oz copper, the board designed
Q1 + Q3 or Q2 + Q4.
3. Pulse Id measured at td ≤ 300 ms, refer to SOA graph for more details.
THERMAL CHARACTERISTICS
Symbol
Parameter
Thermal Resistance, Junction to Case
Min
−
Typ
5.1
50
Max
−
Unit
°C/W
R
q
JC
R
Thermal Resistance, Junction to Ambient (Note 2a)
Thermal Resistance, Junction to Ambient (Note 2b)
−
−
q
JA
R
−
160
−
q
JA
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4
FDMQ8205
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Conditions
Min
−
Max
57
Unit
V
V
INPUT
Input Voltage of Bridge
Gate Voltage of MOSFETs
INPUT1 to INPUT2 or INPUT2 to INPUT1
V
G
G1, G4 to OUTN
G2, G3 to OUTP
−
57
V
I
Input Current of Bridge
Bridge Current through Q2 and Q4 or (Q3 and Q1)
−
1.7
85
A
INPUT
Ambient Operation Temperature (T )
−40
−40
°C
°C
A
Junction Operating Temperature (T ) (Note 4)
125
J
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
4. Backfeed Voltage can not be guaranteed for junction temperature in excess of 85°C. See V in Electrical Characteristics Table.
BF
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Conditions
Min
−
Typ
−
Max
57
Unit
V
INPUT
Input Voltage of Bridge
Gate Voltage of MOSFETs
At INPUT1 to INPUT2 or INPUT2 to INPUT1
At G1, G4 to OUTN and G2, G3 to OUTP
V
V
G
−
−
57
V
I
Quiescent Current
Detection Mode
−
−
−
−
−
−
−
5
mA
Q
1.5 V < V
= V < 10.1 V (Note 5)
INPUT
G
Classification Mode
10.2 V < V = V < 23.9 V (Note 5)
−
400
3.2
36
mA
mA
V
INPUT
G
Power On Mode
Maximum V
−
= V = 57 V (Note 5)
INPUT
G
V
Turn−On Voltage of
MOSFETs
Turn−On of MOSFETs while V Increases
(Note 4)
32
−
TURN_ON
G
I
Turn−Off Leakage Current
V
OUTP
= 57 V, V
= 0 V
700
2.7
mA
V
LEAKAGE
OUTN
T = −40°C to 85°C (Note 5)
J
V
BF
Backfeed Voltage
V
OUTP
= 57 V, V = 0 V, 100 kW
OUTN
−
between INPUT1 and INPUT2
T = −40°C to 85°C (Note 5)
J
R
N−ch MOSFET
P−ch MOSFET
V
V
V
= 42 V, I
= 48 V, I
= 57 V, I
= 1.5 A, T = 25°C
−
−
−
−
−
35
29
26
95
83
76
51
44
mW
mW
mW
mW
mW
DS(on)
G
G
G
INPUT
INPUT
INPUT
A
= 1.5 A, T = 25°C
A
= 1.5 A, T = 25°C
37
A
V
= −42 V, I
= −1.5 A, T = 25°C
147
125
G
G
INPUT
A
V
V
= −48 V, I
= −1.5 A, T = 25°C
INPUT
INPUT
A
= −57 V, I
= −1.5 A, T = 25°C
−
107
mW
G
A
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. INPUT1 is connected to G3 and G4 and also INPUT2 is connected to G1 and G2 like below.
VOUT+
OUTP
G2
G3
FDMQ8205
INPUT1
G1
INPUT2
INPUT1
INPUT2
G4
OUTN
VOUT+
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5
FDMQ8205
TYPICAL CHARACTERISTICS (Q1 OR Q4 N−CHANNEL)
(T = 25°C unless otherwise noted.)
J
2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
10
I
V
= 1.7 A
V
GS
= 0 V
D
10
1
= 57 V
GS
T = 150°C
J
T = 25°C
J
10−1
10−2
10−3
10−4
10−5
T = −55°C
J
−75 −50 −25
0
25 50 75 100 125 150
0.2
0.4
0.6
0.8
1.0
1.2
T , JUNCTION TEMPERATURE (°C)
J
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 4. Normalized On Resistance vs.
Junction Temperature
Figure 5. Source to Drain Diode Forward
Voltage vs. Source Current
10−1
10−2
10−3
10−4
10−5
10−6
10−7
10−8
10−9
V
= 0 V
DS
T = 125°C
J
T = 25°C
J
0
10
20
30
40
50
60
70
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 6. Gate Leakage Current vs.
Gate to Source Voltage
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6
FDMQ8205
TYPICAL CHARACTERISTICS (Q2 OR Q3 P−CHANNEL)
(T = 25°C unless otherwise noted.)
J
2
1.8
1.6
1.4
1.2
1.0
0.8
0.6
10
I
V
= −1.7 A
= −57 V
V
GS
= 0 V
D
10
GS
1
T = 150°C
J
T = 25°C
J
10−1
10−2
10−3
10−4
10−5
T = −55°C
J
−75 −50 −25
0
25 50 75 100 125 150
0.2
0.4
0.6
0.8
1.0
1.2
T , JUNCTION TEMPERATURE (°C)
J
−V , BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 7. Normalized On Resistance vs.
Junction Temperature
Figure 8. Source to Drain Diode Forward Voltage
vs. Source Current
10−1
10−2
10−3
10−4
10−5
10−6
10−7
10−8
10−9
V
= 0 V
DS
T = 125°C
J
T = 25°C
J
0
10
20
30
40
50
60
70
−V , GATE TO SOURCE VOLTAGE (V)
GS
Figure 9. Gate Leakage Current vs.
Gate to Source Voltage
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7
FDMQ8205
TYPICAL CHARACTERISTICS (Q1 + Q3 OR Q2 + Q4 IN SERIAL)
(T = 25°C unless otherwise noted.)
J
2000
1000
100
10
THIS AREA IS
LIMITED BY r
DS(on)
100 ms
100
1 ms
1
10 ms
10
100 ms
0.1
1 s
SINGLE PULSE
T = MAX RATED
SINGLE PULSE
R = 160°C/W
q
JA
T = 25°C
A
10 s
DC
1
J
0.01
0.001
R
= 160°C/W
q
JA
T = 25°C
A
0.1
10−4 10−3 10−2 10−1
1
10
10
103
2
0.01
0.1
1
10
100 400
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
t, PULSE WIDTH (sec)
Figure 11. Single Pulse Maximum Power
Dissipation
Figure 10. Forward Bias Safe Operating Area
2
DUTY CYCLE−DESCENDING ORDER
1
10−1
10−2
10−3
10−4
D = 0.5
0.2
P
0.1
DM
0.05
0.02
0.01
t1
t2
NOTES:
Z
q
(t) = r(t) x R
q
JA
= 160°C/W
SINGLE PULSE
JA
R
q
JA
DUTY FACTOR: D = t / t
T − T = P
1
(t)
2
x Z
q
J
A
DM
JA
10−4
10−3
10−2
t, RECTANGULAR PULSE DURATION (sec)
10−1
1
10
100
1000
Figure 12. Junction−to−Ambient Transient Thermal Response Curve
0.6
0.5
0.4
0.3
0.2
0.1
0
T = 85°C
J
T = 25°C
J
T = −40°C
J
0
15
30
OUTP to OUTN (V)
45
60
Figure 13. Leakage vs. Output Voltage Curve
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8
FDMQ8205
ORDERING INFORMATION
†
Device Marking
Device
FDMQ8205
Package
MLP4.5x5
Reel Size
Tape Width
Shipping
3000 / Tape & Reel
FDMQ8205
13"
12 mm
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
StaGreenBridge is trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or
other countries.
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9
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN12 5x4.5, 0.8P
CASE 511CS
ISSUE O
DATE 31 AUG 2016
5.00
A
B
4.45
(0.40)
(0.25)
0.10 C
2.10(4X)
7
2X
12
1.00(4X)
(0.50)
3.50
4.50
PIN#1
IDENT AREA
4.80
(0.50)2X
0.10 C
1
0.80
(0.65)
6
TOP VIEW
2X
0.40
(12x)
RECOMMENDED LAND PATTERN
0.80 MAX
0.10 C
(0.20)
0.08 C
0.05
C
NOTES:
0.00
A. PACKAGE DOES NOT FULLY CONFORM TO
JEDEC MO−229 REGISTRATION
B. DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSIONS AND TOLERANCES PER
ASME Y14.5M, 1994.
SEATING
SIDE VIEW
PLANE
0.05
5.00
1.95
(4X)
(0.35)4X
(0.50)2X
1.85
1
6
PIN#1
IDENT
(0.50)2X
0.05
4.50
1.05
0.95
(4X)
0.55
0.45
0.10 C A B
0.05
C
7
12
0.80
2.40
0.35
0.25
(12X)
BOTTOM VIEW
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13607G
WDFN12 5X4.5, 0.8P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
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© Semiconductor Components Industries, LLC, 2019
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