FDMC3020DC [ONSEMI]

N 沟道，双 CoolTM 33 PowerTrench® MOSFET，30V，40A，6.25mΩ;


型号：	FDMC3020DC
厂家：	ONSEMI
描述：	N 沟道，双 CoolTM 33 PowerTrench® MOSFET，30V，40A，6.25mΩ 开关脉冲光电二极管晶体管
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中文：	中文翻译
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FDMC3020DC

N-Channel Dual Cool^TM33 PowerTrench^®MOSFET

30 V, 40 A, 6.25 mΩ

General Description

This

Semiconductor’s

N-Channel

MOSFET

advanced

produced

using

process.

PowerTrench^®

Features

Advancements in both silicon and Dual Cool^TMpackage

technologies have been combined to offer the lowest r_DS(on)

Dual Cool^TMTop Side Cooling PQFN package

Max r_DS(on)= 6.25 mΩ at V_GS= 10 V, I_D= 12 A

Max r_DS(on)= 9.0 mΩ at V_GS= 4.5 V, I_D= 10 A

High performance technology for extremely low r_DS(on)

RoHS Compliant

while maintaining excellent switching performance by extremely

low Junction-to-Ambient thermal resistance.

Applications

Synchronous Rectifier for DC/DC Converters

Telecom Secondary Side Rectification

High End Server/Workstation

Pin 1

Dual Cool^TM33

Top

Bottom

MOSFET Maximum Ratings ^T_A= 25°C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

±20

Drain Current -Continuous (Package limited)

-Continuous (Silicon limited)

-Continuous

T_C= 25 °C

T_A= 25 °C

I_D

(Note 1a)

-Pulsed

100

E_AS

Single Pulse Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation

(Note 3)

(Note 4)

dv/dt

1.6

V/ns

T_C= 25 °C

T_A= 25 °C

P_D

Power Dissipation

(Note 1a)

3.0

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance, Junction to Case

(Top Source)

(Bottom Drain)

(Note 1a)

7.9

2.5

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

(Note 1b)

105

°C/W

(Note 1i)

(Note 1j)

(Note 1k)

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

Tape Width

12 mm

Quantity

^TM33

3020

FDMC3020DC

Dual Cool

3000 units

13"

Publication Order Number:

October-2017, Rev. 2

FDMC3020DC/D

Electrical Characteristics ^T_J^{= 25 °C unless otherwise noted}

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

BV_DSS

Drain to Source Breakdown Voltage

_D= 250 μA, V_GS= 0 V

ΔBV_DSS

ΔT_J

Breakdown Voltage Temperature

Coefficient

I_D= 250 μA, referenced to 25 °C

mV/°C

I_DSS

I_GSS

Zero Gate Voltage Drain Current

Gate to Source Leakage Current

_DS= 24 V, V_GS= 0 V

_GS= ±20 V, V_DS= 0 V

μA

±100

On Characteristics

V_GS(th)

Gate to Source Threshold Voltage

_GS= V_DS, I_D= 250 μA

1.0

1.9

-6

3.0

ΔV_GS(th)

ΔT_J

Gate to Source Threshold Voltage

Temperature Coefficient

_D= 250 μA, referenced to 25 °C

mV/°C

_GS= 10 V, I_D= 12 A

5.0

7.2

7.5

6.25

9.0

r_DS(on)

g_FS

Static Drain to Source On Resistance

Forward Transconductance

_GS= 4.5 V, I_D= 10 A

mΩ

_GS= 10 V, I_D= 12 A, T_J= 125 °C

9.1

V_DS= 5 V, I_D= 12 A

Dynamic Characteristics

C_iss

C_oss

C_rss

R_g

Input Capacitance

1038

513

1385

685

135

2.0

_DS= 15 V, V_GS= 0 V,

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

f = 1 MHz

0.1

0.9

Switching Characteristics

t_d(on)

t_r

t_d(off)

t_f

Turn-On Delay Time

Rise Time

V_DD= 15 V, I_D= 12 A,

_GS= 10 V, R_GEN= 6 Ω

Turn-Off Delay Time

Fall Time

Q_g

Total Gate Charge

Gate to Source Gate Charge

Gate to Drain “Miller” Charge

V_GS= 0 V to 10 V

V_GS= 0 V to 4.5 V

15.5

7.1

Q_g

10.6

V_DD= 15 V,

_D= 12 A

Q_gs

Q_gd

2.5

Drain-Source Diode Characteristics

_GS= 0 V, I_S= 12 A

_GS= 0 V, I_S= 1.9 A

(Note 2)

0.82

0.73

1.3

1.2

V_SD

Source to Drain Diode Forward Voltage

t_rr

Reverse Recovery Time

I_F= 12 A, di/dt = 100 A/μs

Q_rr

Reverse Recovery Charge

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Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance, Junction to Case

(Top Source)

(Bottom Drain)

(Note 1a)

(Note 1b)

(Note 1c)

(Note 1d)

(Note 1e)

(Note 1f)

7.9

2.5

105

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

°C/W

(Note 1g)

(Note 1h)

(Note 1i)

(Note 1j)

(Note 1k)

(Note 1l)

NOTES:

1. R

is determined with the device mounted on a FR-4 board using a specified pad of 2 oz copper as shown below. R

is guaranteed by design while R is determined

θCA

θJA

θJC

by the user's board design.

b. 105 °C/W when mounted on

a minimum pad of 2 oz copper

a. 42 °C/W when mounted on

a 1 in pad of 2 oz copper

c. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in pad of 2 oz copper

d. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper

e. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in pad of 2 oz copper

f. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper

g. 200FPM Airflow, No Heat Sink,1 in pad of 2 oz copper

h. 200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper

i. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in pad of 2 oz copper

j. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper

k. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in pad of 2 oz copper

l. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. E of 60 mJ is based on starting T = 25 °C, L = 1 mH, I = 11 A, V = 27 V, V = 10 V.

4. I ≤ 12 A, di/dt ≤ 100 A/μs, V ≤ BV

, Starting T = 25 C.

DSS

www.onsemi.com

Typical Characteristics ^T_J^{= 25°C unless otherwise noted}

PULSE DURATION = 80ꢀs

V_GS= 10V

DUTY CYCLE = 0.5%MAX

V_GS= 4.5V

V_GS= 3V

V_GS= 3.5V

V_GS= 4V

V_GS= 3.5V

V_GS= 4.5V

V_GS= 4V

PULSE DURATION = 80ꢀs

DUTY CYCLE = 0.5%MAX

V_GS= 3V

V_GS= 10V

V_DS, DRAIN TO SOURCE VOLTAGE (V)

I_D, DRAIN CURRENT(A)

Figure 1. On-Region Characteristics

Figure2. N o r m a l i z e d O n - R e s i s ta n c e

vs Drain Current and Gate Voltage

1.8

PULSE DURATION = 80ꢀs

I_D= 12A

V_GS= 10V

DUTY CYCLE = 0.5%MAX

1.6

1.4

1.2

1.0

0.8

0.6

I_D= 12A

T_J= 125^oC

T_J= 25^oC

-50 -25

100 125 150

T_J, JUNCTION TEMPERATURE (^oC)

V_GS, GATE TO SOURCE VOLTAGE (V)

F i gu re 3 . N orma li zed On - Res is ta nc e

vs Junction Temperature

Figure4. On-Resistance vs Gate to

Source Voltage

PULSE DURATION = 80ꢀs

V_GS= 0V

T_J= 150^oC

DUTY CYCLE = 0.5%MAX

V_DS= 5V

T_J= 25^oC

0.1

T_J= 150^oC

T_J= 25^oC

T_J= -55^oC

0.01

0.001

T_J= -55^oC

0.0

0.2

0.4

0.6

0.8

1.0

1.2

V_GS, GATE TO SOURCE VOLTAGE (V)

V_SD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics

Figure6. Source to Drain Diode

Forward Voltage vs Source Current

www.onsemi.com

Typical Characteristics ^T_J^{= 25°C unless otherwise noted}

3000

1000

I_D= 12A

C_iss

V_DD= 10V

V_DD= 15V

C_oss

V_DD= 20V

100

f = 1MHz

= 0V

C_rss

0.1

V_DS, DRAIN TO SOURCE VOLTAGE (V)

Q , GATE CHARGE(nC)

Figure 7. Gate Charge Characteristics

Figure8. C a p a c i t a n c e v s D r a i n

to Source Voltage

_θJC= 2.5 ^oC/W

V_GS= 10 V

V_GS= 4.5 V

T_J= 25^oC

Limited by Package

T_J= 125^oC

0.01

0.1

100

125

150

T_C, CASE TEMPERATURE (^oC)

t_AV, TIME IN AVALANCHE(ms)

Figure9. U n c l a m p e d I n d u c t i v e

Switching Capability

Figure10. Maximum Continuous Drain

Current vs Case Temperature

300

100

2000

SINGLE PULSE

R_θJA= 105 ^oC/W

_A= 25 ^oC

1000

100

100 us

1ms

10 ms

THIS AREA IS

100 ms

1 s

LIMITED BY r

DS(on)

0.1

SINGLE PULSE

10 s

_J= MAX RATED

_θJA= 105 ^oC/W

_A= 25 ^oC

0.01

0.001

0.5

10^-4

10^-3

10^-2

t, PULSE WIDTH (sec)

10^-1

0.01

0.1

100200

100 1000

V_DS, DRAIN to SOURCE VOLTAGE (V)

Figure 11. Forward Bias Safe

Operating Area

Figure12. Single Pulse Maximum

Power Dissipation

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Typical Characteristics ^T_J^{= 25°C unless otherwise noted}

DUTY CYCLE-DESCENDING ORDER

D = 0.5

0.2

0.1

0.05

0.1

0.02

0.01

NOTES:

DUTY FACTOR: D = t /t

SINGLE PULSE

_θJA= 105 ^oC/W

PEAK T = P

x Z

x R

+ T

θJA A

θJA

0.001

0.0005

10^-4

10^-3

10^-2

10^-1

t, RECTANGULAR PULSE DURATION (sec)

100

1000

Figure 13. Junction-to-Ambient Transient Thermal Response Curve

www.onsemi.com

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

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FDMC3020DC [ONSEMI]

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