FDMC4435BZ-F127 [ONSEMI]
-30V P-Channel Power Trench® MOSFET;
| 型号： | FDMC4435BZ-F127 |
| 厂家： | 
ONSEMI |
| 描述： | -30V P-Channel Power Trench® MOSFET |
| 文件： | 总10页 (文件大小：591K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – P-Channel,
POWERTRENCH)
8
S
S
S
G
7
6
5
1
D
D
2
-30 V, -18 A, 20 mW
D
3
D
4
Top
Bottom
WDFN8 3.3x3.3, 0.65P
CASE 511DR
FMDC4435BZ/FDMC4435BZ−F127
FDMC4435BZ,
FDMC4435BZ-F127,
FDMC4435BZ-F127-L701
Pin 1
G
S
S
S
General Description
D
This P−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been especially tailored to
minimize the on−state resistance. This device is well suited for Power
Management and load switching applications common in Notebook
Computers and Portable Battery Packs.
D
D
D
Bottom
Top
WDFN8 3.3x3.3, 0.65P
CASE 511DQ
(Option A)
FDMC4435BZ−F127−L701
Features
Max r
Max r
= 20 mW at V = −10 V, I = −8.5 A
GS D
DS(on)
DS(on)
MARKING DIAGRAM
= 37 mW at V = −4.5 V, I = −6.3 A
GS
D
Extended V
Range (−25 V) for Battery Applications
GSS
FDMC
4435BZ
ALYW
ON AXYKK
FDMC
High Performance Trench Technology for Extremely Low r
High Power and Current Handling Capability
HBM ESD Protection Level > 7 kV Typical*
100% UIL Tested
DS(on)
4435BZ
FDMC4435BZ/
FDMC4435BZ−F127
FDMC4435BZ−F127−L701
These Devices are Pb−Free and are RoHS Compliant
FDMC4435BZ = Specific Device Code
A
= Assembly Location
XY
KK
L
= 2−Digit Date Code
= 2−Digit Lot Run Traceability Code
= Wafer Lot Number
Applications
High Side in DC − DC Buck Converters
Notebook Battery Power Management
Load Switch in Notebook
YW
= Assembly Start Week
PIN ASSIGNMENT
D
D
D
5
6
7
G
S
S
S
4
3
2
D
8
1
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of
this data sheet.
*The diode connected between the gate and source servers only as protection
against ESD. No gate overvoltage rating is implied.
Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
February, 2023 − Rev. 5
FDMC4435BZ/D
FDMC4435BZ, FDMC4435BZ−F127, FDMC4435BZ−F127−L701
MOSFET MAXIMUM RATINGS (T = 25C unless otherwise noted)
A
Symbol
Parameter
Rating
−30
Unit
V
V
DS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
25
V
I
D
Continuous
T
C
= 25C
−18
A
Continuous (Note 1a)
Pulsed
T = 25C
A
−8.5
−50
E
Single Pulse Avalanche Energy (Note 2)
Power Dissipation
32
mJ
W
AS
P
T
C
= 25C
31
D
Power Dissipation (Note 1a)
T = 25C
A
2.3
T , T
Operating and Storage Junction Temperature Range
−55 to + 150
C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
RqJC
Parameter
Rating
Unit
Thermal Resistance, Junction to Case
4
C/W
RqJA
Thermal Resistance, Junction to Ambient (Note 1a)
53
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. R
is guaranteed
q
q
JC
JA
by design while R
is determined by the user’s board design.
q
CA
2
a. 53C/W when mounted on a 1 in pad
b. 125C/W when mounted on a minimum
of 2 oz copper
pad of 2 oz copper
2. Starting T = 25C; P−ch: L = 1 mH, I = −8 A, V = −27 V, V = −10 V.
J
AS
DD
GS
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2
FDMC4435BZ, FDMC4435BZ−F127, FDMC4435BZ−F127−L701
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= −250 mA, V = 0 V
−30
V
DSS
D
GS
DBV
DT
/
Breakdown Voltage Temperature
Coefficient
= −250 mA, referenced to 25C
21
mV/C
DSS
J
D
I
Zero Gate Voltage Drain Current
V
DS
V
DS
V
GS
= −24 V, V = 0 V
−1
mA
mA
DSS
GS
= −24 V, V = 0 V, T = 125C
−100
10
GS
J
I
Gate to Source Leakage Current
= 25 V, V = 0 V
DS
GSS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
V
= V , I = −250 mA
−1.0
−1.8
−5
−3.0
V
GS(th)
GS
DS
D
DV
/
Gate to Source Threshold Voltage
Temperature Coefficient
I
D
= −250 mA, referenced to 25C
mV/C
GS(th)
DT
J
r
Static Drain to Source On Resistance
Forward Transconductance
V
GS
V
GS
V
GS
V
DD
= −10 V, I = −8.5 A
14
21
20
25
20
37
29
mW
DS(on)
D
= −4.5 V, I = −6.3 A
D
= −10 V, I = −8.5 A, T = 125C
D
J
g
FS
= −5 V, I = −8.5 A
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= −15 V, V = 0 V, f = 1 MHz
1535
310
280
4
2040
410
pF
pF
pF
W
iss
DS
GS
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
420
rss
R
f = 1 MHz
g
SWITCHING CHARACTERISTICS
t
Turn−On Delay Time
Rise Time
V
= −15 V, I = −8.5 A, V = −10 V,
GEN
10
9
20
18
56
34
53
ns
ns
ns
ns
nC
d(on)
DD
D
GS
R
= 6 W
t
r
t
Turn−Off Delay Time
Fall Time
35
19
38
d(off)
t
f
Q
Total Gate Charge
V
GS
V
DD
= 0 V to −10 V,
g
= −15 V, I = −8.5 A
D
V
GS
V
DD
= 0 V to −4.5 V,
20
28
nC
= −15 V, I = −8.5 A
D
Q
Gate to Source Charge
V
DD
= −15 V, I = −8.5 A
4.3
11
nC
nC
gs
D
Q
Gate to Drain “Miller” Charge
gd
DRAIN−SOURCE DIODE CHARACTERISTICS
V
Source to Drain Diode Forward
Voltage
V
V
= 0 V, I = −8.5 A (Note 3)
0.86
0.74
26
1.5
1.2
40
V
SD
GS
S
= 0 V, I = −1.9 A (Note 3)
GS
S
t
Reverse Recovery Time
I = −8.5 A, di/dt = 100 A/ms
F
ns
rr
Q
Reverse Recovery Charge
12
20
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
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3
FDMC4435BZ, FDMC4435BZ−F127, FDMC4435BZ−F127−L701
TYPICAL CHARACTERISTICS (T = 25C UNLESS OTHERWISE NOTED)
J
50
40
30
20
10
0
4.0
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
= −4.5 V
GS
GS
3.5
3.0
V
= −5 V
= −10 V
GS
V
= −3.5 V
GS
V
GS
V
GS
= −4 V
2.5
2.0
V
= −4 V
V
GS
= −4.5 V
1.5
V
GS
= −5 V
V
GS
= −3.5 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
1.0
0.5
V
GS
= −10 V
0
1
2
3
4
0
10
20
30
40
50
−V , DRAIN TO SOURCE VOLTAGE (V)
DS
I , DRAIN CURRENT (A)
D
Figure 1. On Region Characteristics
Figure 2. Normalized On−Resistance vs.
Drain Current and Gate Voltage
1.6
60
I
D
= −8.5 A
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
= −10 V
GS
1.4
1.2
1.0
0.8
0.6
50
I
D
= −8.5 A
40
30
20
10
T = 125C
J
T = 25C
J
−75 −50 −25
0
25 50 75 100 125 150
2
4
6
8
10
T , JUNCTION TEMPERATURE (C)
J
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs. Junction Temperature
Figure 4. On−Resistance vs. Gate to Source
Voltage
50
50
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
GS
= 0 V
10
40
T = 150C
J
V
DS
= −5 V
1
30
20
10
0
T = 25C
J
0.1
T = 25C
T = 150C
J
J
0.01
0.001
T = −55C
J
T = −55C
J
0.0 0.2
0.4 0.6 0.8 1.0 1.2 1.4 1.6
1
2
3
4
5
−V , GATE TO SOURCE VOLTAGE (V)
GS
−V , BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward
Voltage vs. Source Current
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4
FDMC4435BZ, FDMC4435BZ−F127, FDMC4435BZ−F127−L701
TYPICAL CHARACTERISTICS (T = 25C UNLESS OTHERWISE NOTED) (CONTINUED)
J
10
8
10000
I
D
= −8.5 A
C
iss
V
DD
= −10 V
1000
100
10
6
C
oss
V
= −15 V
DD
4
C
rss
V
= −20 V
DD
2
f = 1 MHz
= 0 V
V
GS
0
0
10
20
30
40
30
0.1
1
10
Q , GATE CHARGE (nC)
g
−V , DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain to Source Voltage
40
20
10
V
GS
= −10 V
30
20
10
0
V
GS
= −4.5 V
T = 25C
J
Limited by Package
T = 125C
J
R
= 4C/W
q
JC
1
0.001
0.01
0.1
1
10
100
25
50
75
100
125
150
t , TIME IN AVALANCHE (ms)
AV
T , CASE TEMPERATURE (C)
C
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain Current
vs. Case Temperature
10−4
100
10
V
DS
= 0 V
10−5
10−6
10−7
10−8
100 ms
1 ms
T = 125C
J
1
0.1
10 ms
THIS AREA IS
LIMITED BY r
100 ms
DS(on)
SINGLE PULSE
1 s
10 s
DC
T
= MAX RATED
T = 25C
J
J
R
= 125C/W
q
JA
T
A
= 25C
0.01
0.01
0.1
1
10
100
0
5
10
15
20
25
30
−V , DRAIN TO SOURCE VOLTAGE (V)
DS
−V , GATE TO SOURCE VOLTAGE (V)
GS
Figure 11. Forward Bias Safe Operating Area
Figure 12. IGSS vs. VGSS
www.onsemi.com
5
FDMC4435BZ, FDMC4435BZ−F127, FDMC4435BZ−F127−L701
TYPICAL CHARACTERISTICS (T = 25C UNLESS OTHERWISE NOTED) (CONTINUED)
J
100
10
V
GS
= −10 V
SINGLE PULSE
= 125C/W
R
q
JA
T = 25C
A
1
0.5
10−3
10−2
10−1
1
10
100
1000
t, PULSE WIDTH (s)
Figure 13. Single Pulse Maximum Power Dissipation
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
P
DM
0.1
0.05
0.02
0.01
t
1
0.1
t
2
NOTES:
Z
(t) = r(t) x R
qJA
qJA
SINGLE PULSE
10−1
R
= 125C/W
qJA
Peak T = P x Z
(t) + T
2
J
DM
qJA
A
Duty Cycle, D = t / t
1
0.01
10−3
10−2
1
10
100
1000
t, RECTANGULAR PULSE DURATION (s)
Figure 14. Junction−to−Ambient Transient Thermal Response Curve
ORDERING INFORMATION
Device
†
Device Marking
Package Type
Shipping
FDMC4435BZ
FDMC4435BZ
WDFN8 3.3x3.3, 0.65P, case 511DR
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
(Pb−Free)
FDMC4435BZ−F127
FDMC4435BZ
FDMC4435BZ
WDFN8 3.3x3.3, 0.65P, case 511DR
(Pb−Free)
FDMC4435BZ−F127−L701
WDFN8 3.3x3.3, 0.65P, case 511DQ
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other
countries.
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511DQ
ISSUE O
DATE 31 OCT 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13648G
WDFN8 3.3X3.3, 0.65P
PAGE 1 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
WDFN8 3.3x3.3, 0.65P
CASE 511DQ
ISSUE O
DATE 31 OCT 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13648G
WDFN8 3.3X3.3, 0.65P
PAGE 2 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511DR
ISSUE B
DATE 02 FEB 2022
GENERIC
MARKING DIAGRAM*
XXXX = Specific Device Code
*This information is generic. Please refer to
A
Y
= Assembly Location
= Year
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
XXXX
AYWWG
G
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13650G
WDFN8 3.3x3.3, 0.65P
PAGE 1 OF 1
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
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vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
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