FDH44N50 [ONSEMI]
功率 MOSFET，N 沟道，UniFETTM，500 V，44 A，120 mΩ，TO-247;
| 型号： | FDH44N50 |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，UniFETTM，500 V，44 A，120 mΩ，TO-247 局域网 PC 开关 脉冲 晶体管 |
| 文件： | 总8页 (文件大小：266K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – Power, N-Channel,
SMPS
V
R
MAX
I MAX
D
DS
DS(ON)
500 V
120 mW @ 10 V
44 A
500 V, 44 A, 120 mW
D
FDH44N50
G
Description
UniFETt MOSFET is onsemi’s high voltage MOSFET family
based on planar stripe and DMOS technology. This MOSFET is
tailored to reduce on−state resistance, and to provide better switching
performance and higher avalanche energy strength. This device family
is suitable for switching power converter applications such as power
factor correction (PFC), flat panel display (FPD) TV power, ATX and
electronic lamp ballasts.
S
G
D
S
Features
Low Gate Charge Q Results in Simple Drive Requirement
g
TO−247−3LD
CASE 340CK
(Typ. 90 nC)
Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness
Reduced R
(110 mW (Typ.) @ V = 10 V, I = 22 A)
DS(on)
GS D
MARKING DIAGRAM
Reduced Miller Capacitance and Low Input Capacitance
(Typ. C = 40 pF)
rss
Improved Switching Speed with Low EMI
175C Rated Junction Temperature
This Device is Pb−Free and is RoHS Compliant
&Z&3&K
FDH44N50
Applications
Lighting
Uninterruptible Power Supply
AC−DC Power Supply
&Z
&3
&K
= Assembly Plant Code
= 3−Digit Date Code (YWW)
= 2−Digit Lot Traceability Code
= Specific Device Code
FDH44N50
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
Semiconductor Components Industries, LLC, 2002
1
Publication Order Number:
April, 2023 − Rev. 4
FDH44N50/D
FDH44N50
ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted)
C
Symbol
Parameter
FDH44N50
500
Unit
V
V
DSS
Drain to Source Voltage
Gate−Source Voltage
Drain Current −
V
GS
30
V
I
D
− Continuous (T = 25C, V = 10 V)
44
32
176
A
C
C
GS
GS
− Continuous (T = 100C, V = 10 V)
− Pulsed (Note 1)
P
Power Dissipation
750
5
W
W/C
C
D
Derate Above 25C
T , T
Operating and Storage Temperature
Soldering Temperature for 10 Seconds
Mounting Torque, 8−32 or M3 Screw
−55 to + 175
J
STG
300 (1.6 mm from Case)
10 ibf*in (1.1 N*m)
C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Mark
Package
Package Method
Reel Size
Tape Width
Quantity
FDH44N50
FDH44N50
TO−247−3
Tube
N/A
N/A
30 Units
THERMAL CHARACTERISTICS
Symbol
Parameter
FDH44N50
Unit
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
0.2
40
C/W
R
q
JC
JA
R
q
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2
FDH44N50
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
STATICS
BV
Drain to Source Breakdown Voltage
I
I
= 250 mA, V = 0 V
500
−
−
−
V
DSS
D
GS
DBV
/ DT
Breakdown Voltage Temperature
Coefficient
= 1 mA, Referenced to 25C
−
0.61
V/C
DSS
J
D
r
Drain to Source On−Resistance
Gate Threshold Voltage
V
V
= 10 V, I = 22 A
−
2
−
−
−
0.11
3.15
−
0.12
4
W
V
DS(ON)
GS
D
V
= V , I = 250 mA
GS D
GS(th)
DS
I
Zero Gate Voltage Drain Current
V
V
= 500 V
= 0 V
T
C
T
C
= 25C
25
mA
mA
nA
DSS
DS
GS
= 150C
−
250
100
I
Gate to Source Leakage Current
V
GS
= 20 V
−
GSS
DYNAMICS
gf
Forward Transconductance
Total Gate Charge at 10 V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Turn-On Delay Time
V
V
= 50 V, I = 22 A
11
−
−
−
−
−
−
−
−
−
−
−
90
−
108
29
37
−
S
S
DS
D
Q
= 10 V, V = 400 V, I = 44 A
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
g(TOT)
GS
DS
D
Q
gs
Q
gd
24
31
t
V
R
= 250 V, I = 44 A,
16
d(on)
DD
D
D
= 5.68 W, R = 2.15 W
G
t
r
Turn−On Rise Time
84
−
t
Turn-Off Delay Time
45
−
d(off)
t
f
Turn−Off Fall Time
79
−
C
Input Capacitance
V
= 25 V, V = 0 V, f = 1 MHz
5335
645
40
−
iss
oss
rss
DS
GS
C
C
Output Capacitance
−
Reverse Transfer Capacitance
−
AVALANCHE CHARACTERISTICS
E
Single Pulse Avalanche Energy (Note 2)
Avalanche Current
1500
−
−
−
mJ
A
AS
AR
I
−
44
DRAIN-SOURCE DIODE CHARACTERISTICS
D
I
Continuous Source Current (Body Diode)
−
−
−
−
44
A
A
S
MOSFET symbol
Showing the integral
reverse p−n junction
diode.
I
Pulsed Source Current (Body Diode)
(Note 1)
176
G
SM
S
V
Source to Drain Diode Voltage
Reverse Recovery Time
I
I
I
= 44 A
−
−
−
0.900
920
14
1.2
1100
18
V
SD
SD
SD
SD
t
= 44 A, dI /dt = 100 A/ms
ns
mC
rr
SD
Q
Reverse Recovery Charge
= 44 A, dI /dt = 100 A/ms
SD
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Starting T = 25C, L = 1.61 mH, I = 44 A
J
AS
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3
FDH44N50
TYPICAL CHARACTERISTICS
200
500
100
T
J
= 175C
T
J
= 25C
V
GS DESCENDING
VGS DESCENDING
100
10
5.5 V
5 V
4 V
4.5 V
6 V
6.5 V
10 V
6 V
5.5 V
4.5 V
5 V
8 V
10 V
10
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
1
1
1
1
1
100
0
100
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 2. Output Characteristics
Figure 1. Output Characteristics
3
2
1
0
160
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
140
120
100
80
VDD = 80 V
TJ
= 175C
60
40
20
0
T = 25C
J
V
GS = 10 V, I = 22 A
D
100 125 150 175
TJ, JUNCTION TEMPERATURE (C)
−25
0
25
50
75
−50
5.5
6.0
6.5
4.0
4.5
5.0
3.5
3.0
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. Normalized Drain to Source On
Resistance vs. Junction Temperature
Figure 3. Transfer Characteristics
16
12
8
10000
1000
100
ID = 44 A
100V
250V
CISS
400V
COSS
4
CRSS
VGS = 0 V, f = 1 MHz
0
0
10
150
75
100
125
50
25
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
Qg, GATE CHARGE (nC)
Figure 6. Gate Charge Waveforms for Constant
Gate Current
Figure 5. Capacitance vs. Drain to Source Voltage
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4
FDH44N50
TYPICAL CHARACTERISTICS
80
70
60
50
40
30
20
10
0
200
100
100 ms
1 ms
10
TJ = 175C
OPERATION IN THIS AREA
LIMITED BY RDS(ON)
10 ms
TJ = 25C
DC
T
C
= 25C
1
1.1
1.0
1
0.8
0.9
10
100
1000
0.3
0.4
0.5
0.6
0.7
VSD, SOURCE TO DRAIN VOLTAGE (V)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Maximum Safe Operating Area
Figure 7. Body Diode Forward Voltage vs. Body
Diode Current
50
40
30
20
10
0
150
175
75
100
125
25
50
TC, CASE TEMPERATURE (C)
Figure 9. Maximum Drain Current vs. Case Temperature
DUTY CYCLE DESENDING ORDER
0.5
0.2
1
0.1
0.05
0.02
0.01
0.1
t1
PD
t2
DUTY FACTOR, D = t1 / t2
PEAKT
J
= (PD x ZqJC x RqJC)+ T
C
SINGLE PULSE
0.01
10
0
−2
−1
−3
−5
−4
10
10
10
10
10
t1, RECTANGULAR PULSE DURATION (S)
Figure 10. Normalized Transient Thermal Impedance, Junction to Case
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5
FDH44N50
V
DS
BVDSS
t
P
L
V
DS
I
AS
VARY tP TO OBTAIN
REQUIRED PEAK IAS
+
V
DD
R
G
VDD
−
VGS
DUT
t
P
0 V
I
AS
0
0.01W
t
AV
Figure 12. Unclamped Energy Waveforms
Figure 11. Unclamped Energy Test Circuit
Qg(TOT)
VDS
V
DD
R
L
V
DS
V
GS
= 10 V
V
GS
+
VDD
V
GS
−
V
GS
= 1 V
DUT
Q
0
I
g(TH)
g(REF)
Q
Q
gd
gs
I
g(REF)
0
Figure 14. Gate Charge Waveforms
Figure 13. Gate Charge Test Circuit
t
t
OFF
ON
VDS
t (
d ON)
t
)
d(OFF
t
f
t
r
R
L
VDS
90%
90%
+
VDD
−
VGS
10%
10%
0
90%
50%
DUT
R
GS
VGS
50%
PULSE WIDTH
10%
0
VGS
Figure 16. Switching Time Waveform
Figure 15. Switching Time Test Circuit
UniFET is a trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/
or other countries.
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
DATE 31 JAN 2019
P1
D2
A
E
P
A
A2
Q
E2
S
D1
D
E1
B
2
2
1
3
L1
A1
b4
L
c
(3X) b
(2X) b2
M
M
B A
0.25
MILLIMETERS
MIN NOM MAX
4.58 4.70 4.82
2.20 2.40 2.60
1.40 1.50 1.60
1.17 1.26 1.35
1.53 1.65 1.77
2.42 2.54 2.66
0.51 0.61 0.71
20.32 20.57 20.82
(2X) e
DIM
A
A1
A2
b
b2
b4
c
GENERIC
D
MARKING DIAGRAM*
D1 13.08
~
~
D2
E
0.51 0.93 1.35
15.37 15.62 15.87
AYWWZZ
XXXXXXX
XXXXXXX
E1 12.81
~
~
E2
e
L
4.96 5.08 5.20
5.56
15.75 16.00 16.25
3.69 3.81 3.93
3.51 3.58 3.65
XXXX = Specific Device Code
~
~
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ = Assembly Lot Code
L1
P
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
P1 6.60 6.80 7.00
Q
S
5.34 5.46 5.58
5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13851G
TO−247−3LD SHORT LEAD
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
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or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
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associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
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