FDH45N50F-F133 [ONSEMI]
功率 MOSFET，N 沟道，UniFETTM，FRFET®，500 V，45 A，120 mΩ，TO-247;
| 型号： | FDH45N50F-F133 |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，UniFETTM，FRFET®，500 V，45 A，120 mΩ，TO-247 局域网 开关 脉冲 晶体管 |
| 文件： | 总10页 (文件大小：368K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – N-Channel,
UniFETt, FRFET)
V
R
MAX
I MAX
D
DS
DS(ON)
500 V
120 mW @ 10 V
45 A
500 V, 45 A, 120 mW
D
FDH45N50F
G
Description
UniFET MOSFET is onsemi’s high voltage MOSFET family based
on planar stripe and DMOS technology. This MOSFET is tailored to
reduce on−state resistance, and to provide better switching
performance and higher avalanche energy strength. The body diode’s
reverse recovery performance of UniFET FRFET MOSFET has been
S
N-CHANNEL MOSFET
enhanced by lifetime control. Its t is less than 100 nsec and the
rr
S
D
reverse dv/dt immunity is 15 V/ns while normal planar MOSFETs
have over 200 nsec and 4.5 V/nsec respectively. Therefore, it can
remove additional component and improve system reliability in
certain applications in which the performance of MOSFET’s body
diode is significant. This device family is suitable for switching power
converter applications such as power factor correction (PFC), flat
panel display (FPD) TV power, ATX and electronic lamp ballasts.
G
TO−247−3LD
CASE 340CK
Features
MARKING DIAGRAM
R
= 105 mW (Typ.) @ V = 10 V, I = 22.5 A
GS D
DS(on)
Low Gate Charge (Typ. 105 nC)
Low C (Typ. 62 pF)
rss
&Z&3&K
FDH
45N50F
100% Avalanche Tested
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
Lighting
Uninterruptible Power Supply
AC−DC Power Supply
&Z
&3
&K
= Assembly Plant Code
= 3−Digit Date Code (YWW)
= 2−Digit Lot Traceability Code
= Specific Device Code
FDH45N50F
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
April, 2023 − Rev. 5
FDH45N50F/D
FDH45N50F
ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted)
C
Symbol
Parameter
FDH45N50F−F133
Unit
V
DSS
Drain to Source Voltage
500
V
I
D
Drain Current −
−Continuous (T = 25C)
45
28.4
A
A
C
−Continuous (T = 100C)
C
I
Drain Current
−Pulsed (Note 1)
180
30
1868
45
A
V
DM
V
GSS
Gate−Source Voltage
E
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 1)
mJ
A
AS
AR
I
E
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
Power Dissipation
62.5
50
mJ
V/ns
AR
dv/dt
P
(T = 25C)
−Derate Above 25C
625
5
W
W/C
D
C
T , T
Operating and Storage Temperature Range
−55 to +150
C
C
J
STG
T
L
Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Second
300
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. L = 1.46 mH, I = 48 A, V = 50 V, R = 25 W, Starting T = 25 C.
AS
DD
G
DSS
J
3. I 45 A, di/dt 200 A/ms, V BV
, Starting T = 25 C.
SD
DD
J
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Package
Package Method
Reel Size
Tape Width
Quantity
FDH45N50F−F133
FDH45N50F
TO−247−3
Tube
−
−
30 Units
THERMAL CHARACTERISTICS
Symbol
Parameter
FDH45N50F−F133
Unit
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
0.2
40
C/W
R
q
JC
JA
R
q
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2
FDH45N50F
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= 250 mA, V = 0 V
500
−
−
−
V
DSS
D
GS
DBV
/ DT
Breakdown Voltage Temperature
Coefficient
= 250 mA, Referenced to 25C
−
0.5
V/C
DSS
J
D
I
Zero Gate Voltage Drain Current
V
V
V
V
= 500 V, V = 0 V
−
−
−
−
−
−
−
−
25
250
100
−100
mA
mA
nA
nA
DSS
DS
GS
= 400 V, T = 125C
DS
GS
GS
C
I
Gate−Body Leakage Current, Forward
Gate−Body Leakage Current, Reverse
= 30 V, V = 0 V
DS
GSSF
I
= −30 V, V = 0 V
DS
GSSR
ON CHARACTERISTICS
V
Gate Threshold Voltage
V
DS
V
GS
V
DS
= V , I = 250 mA
3
−
−
−
0.105
49
5
0.12
−
V
W
S
GS(th)
DS(on)
GS
D
R
Static Drain−Source On−Resistance
Forward Transconductance
= 10 V, I = 22.5 A
D
g
FS
= 40 V, I = 22.5 A
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 25 V, V = 0 V, f = 1 MHz
−
−
−
−
−
5100
790
62
6630
1030
−
pF
pF
pF
pF
pF
iss
oss
rss
oss
DS
GS
C
C
C
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
V
V
= 400 V, V = 0 V, f = 1 MHz
161
342
−
DS
GS
C
eff.
Effective Output Capacitance
= 0 V to 400 V, V = 0 V
−
oss
DS
GS
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Turn−On Rise Time
Turn-Off Delay Time
Turn−Off Fall Time
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
V
V
= 250 V, I = 48 A,
−
−
−
−
−
−
−
140
500
215
245
105
33
290
1010
440
500
137
−
ns
ns
d(on)
DD
GS
D
= 10 V, R = 25 W
G
t
r
(Note 4)
t
ns
d(off)
t
f
ns
Q
V
DS
V
GS
= 400 V, I = 48 A
nC
nC
nC
g
D
,
= 10 V
Q
gs
gd
(Note 4)
Q
45
−
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
Maximum Continuous Drain−Source Diode Forward Current
Maximum Pulsed Drain−Source Diode Forward Current
−
−
−
−
−
−
−
45
180
1.4
−
A
A
S
I
SM
V
SD
Source to Drain Diode Voltage
Reverse Recovery Time
V
V
= 0 V, I = 45 A
−
V
GS
S
t
= 0 V, I = 45 A,
188
0.64
ns
mC
rr
GS
S
dI /dt = 100 A/ms
F
Q
Reverse Recovery Charge
−
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially Independent of Operating Temperature Typical Characteristics.
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3
FDH45N50F
TYPICAL CHARACTERISTICS
V
2
2
GS
10
10
Top:
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
150C
1
Bottom:
10
1
10
25C
−55C
*Notes:
*Notes:
1. 250 ms Pulse Test
1. V = 40 V
DS
0
2. T = 25C
C
10
2. 250 ms Pulse Test
0
10
−1
0
1
10
10
10
10
, Gate−Source Voltage [V]
12
2
4
6
8
V
DS
, Drain−Source Voltage [V]
V
GS
Figure 2. Transfer Characteristics
Figure 1. On−Region Characteristics
0.30
0.25
2
10
0.20
0.15
V
GS
= 10 V
150C
25C
1
10
0.10
0.05
0.00
V
GS
= 20 V
*Notes:
1. V = 0 V
GS
2. 250 ms Pulse Test
*Note: T = 25C
J
0
10
0
20
40
60
80
1.8
100 120 140 160
0.2 0.4
0.6 0.8 1.0 1.2
1.4
1.6
I , Drain Current [A]
D
V
SD
, Source−Drain Voltage [V]
Figure 3. On−Resistance Variation vs. Drain Current
Figure 4. Body Diode Forward Voltage Variation
vs. Source Current and Temperature
and Gate voltage
12000
10000
8000
12
V
= 100 V
C
C
C
= C + C (C = shorted)
DS
iss
oss
rss
gs
gd
ds
= C + C
ds
gd
gd
C
V
= 250 V
10
oss
DS
= C
V
= 400 V
DS
C
iss
8
6
4
2
0
6000
4000
*Notes:
1. V = 0 V
GS
C
rss
2. f = 1 MHz
2000
0
*Note: I = 48 A
D
−1
80
Q , Total Charge [nC]
100
120
1
0
40
60
0
20
10
10
10
V
, Drain−Source Voltage [V]
G
DS
Figure 6. Gate Charge Characteristics
Figure 5. Capacitance Characteristics
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4
FDH45N50F
TYPICAL CHARACTERISTICS
1.2
1.1
1.0
0.9
0.8
2.5
2.0
1.5
1.0
*Notes:
*Notes:
1. V = 0 V
1. V = 10 V
GS
GS
0.5
2. I = 250 mA
2. I = 22.5 A
D
D
0.0
−100
−100
−50
0
50
100
150
200
200
−50
0
50
100
150
T , Junction Temperature [C]
J
T , Junction Temperature [C]
J
Figure 8. On−Resistance Variation
Figure 7. Breakdown Voltage Variation
vs. Temperature
vs. Temperature
50
10 ms
100 ms
1 ms
10 ms
2
10
40
30
20
1
0
100 ms
DC
10
10
Operation in This Area
is Limited by R
DS(on)
*Notes:
1. T = 25C
C
J
10
0
2. T = 150C
3. Single Pulse
−1
10
1
2
3
0
25
50
75
100
125
150
10
10
10
10
T , Case Temperature [C]
C
V
DS
, Drain−Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
4000
3500
3000
2500
2000
1500
1000
500
45
*Notes:
40
35
30
25
*Notes:
1. V = 400 V
DS
1. V = 400 V
2. V = 12 V
DS
GS
2. V = 12 V
3. I = 25 A
GS
D
3. I = 25 A
4. T = 125C
D
J
4. T = 125C
J
dv/dt(on)
di/dt(on)
20
15
10
dv/dt(off)
di/dt(off)
5
0
0
40
0
5
10 15 20 25 30 35
45 50
0
5
10 15 20 25 30 35 40 45 50
R , Gate Resistance [W]
G
R , Gate Resistance [W]
G
Figure 11. Typical Drain Current Slope
vs. Gate Resistance
Figure 12. Typical Drain−Source Voltage Slope
vs. Gate Resistance
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5
FDH45N50F
1000
800
600
400
100
*Notes:
1. If R = 0 W
t
AV
= (L) (I ) / (1.3 Rated BV
− V
DC
)
AS
DSS
2. If R 0 W
= (L/R) In [(I x R) / (1.3 Rated BV
Eoff
t
AV
− V ) + 1
DD
AS
DSS
Starting T = 25C
J
10
Eon
Starting T = 150C
*Notes:
J
1. V = 400 V
DS
2. V = 12 V
GS
200
0
3. I = 25 A
D
4. T = 125C
J
1
0.01
0
5
10 15 20 25 30 35 40 45 50
0.1
1
10
100
R , Gate Resistance [W]
G
t , Time In Avalanche [ms]
AV
Figure 14. Unclamped Inductive
Switching Capability
Figure 13. Typical Switching Losses
vs. Gate Resistance
−1
D=0.5
10
0.2
Notes:
1. Z (t) = 0.2C/W Max.
q
JC
0.1
2. Duty Factor, D = t /t
1
2
0.05
0.02
0.01
3. T − T = P
* Z (t)
q
JC
JM
C
DM
−2
−3
10
P
DM
Single Pulse
t
1
t
2
10
1
−3
−2
−1
0
−4
−5
10
10
10
10
10
10
10
t , Square Wave Pulse Duration [sec]
1
Figure 15. Transient Thermal Resistance Curve
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6
FDH45N50F
V
GS
R
Q
g
L
V
DS
Q
Q
gs
gd
V
GS
DUT
I
G
= Const.
Charge
Figure 16. Gate Charge Test Circuit & Waveform
R
L
V
DS
GS
90%
90%
10%
90%
V
DS
V
DD
V
GS
R
G
10%
V
DUT
V
GS
t
r
t
f
t
t
d(off)
d(on)
t
on
t
off
Figure 17. Resistive Switching Test Circuit & Waveforms
L
BVDSS
BVDSS * VDD
2
1
2
EAS
+
@ LIAS
V
DS
BV
DSS
I
D
I
AS
R
G
V
DD
I (t)
D
V
DS
(t)
DUT
V
DD
V
GS
t
p
Time
t
p
Figure 18. Unclamped Inductive Switching Test Circuit & Waveforms
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7
FDH45N50F
+
DUT
V
SD
−
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
− dv/dt controlled by R
G
− I controlled by pulse period
SD
Gate Pulse Width
D +
Gate Pulse Period
V
GS
10 V
(Driver)
I
, Body Diode Forward Current
FM
I
di/dt
SD
(DUT)
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
DD
V
SD
(DUT)
Body Diode
Forward Voltage Drop
Figure 19. Peak Diode Recovery dv/dt Test Circuit & Waveforms
UniFET is a trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other
countries.
FRFET is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or
other countries.
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
DATE 31 JAN 2019
P1
D2
A
E
P
A
A2
Q
E2
S
D1
D
E1
B
2
2
1
3
L1
A1
b4
L
c
(3X) b
(2X) b2
M
M
B A
0.25
MILLIMETERS
MIN NOM MAX
4.58 4.70 4.82
2.20 2.40 2.60
1.40 1.50 1.60
1.17 1.26 1.35
1.53 1.65 1.77
2.42 2.54 2.66
0.51 0.61 0.71
20.32 20.57 20.82
(2X) e
DIM
A
A1
A2
b
b2
b4
c
GENERIC
D
MARKING DIAGRAM*
D1 13.08
~
~
D2
E
0.51 0.93 1.35
15.37 15.62 15.87
AYWWZZ
XXXXXXX
XXXXXXX
E1 12.81
~
~
E2
e
L
4.96 5.08 5.20
5.56
15.75 16.00 16.25
3.69 3.81 3.93
3.51 3.58 3.65
XXXX = Specific Device Code
~
~
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ = Assembly Lot Code
L1
P
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
P1 6.60 6.80 7.00
Q
S
5.34 5.46 5.58
5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13851G
TO−247−3LD SHORT LEAD
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
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