FDFMA3N109 [ONSEMI]
30V Integrated N-Channel PowerTrench®MOSFET and Schottky Diode;
| 型号： | FDFMA3N109 |
| 厂家： | 
ONSEMI |
| 描述： | 30V Integrated N-Channel PowerTrench®MOSFET and Schottky Diode |
| 文件： | 总9页 (文件大小：513K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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July 2014
FDFMA3N109
Integrated N-Channel PowerTrench® MOSFET and Schottky Diode
General Description
Features
MOSFET:
This device is designed specifically as a single package
solution for a boost topology in cellular handset and
other ultra-portable applications. It features a MOSFET
with low input capacitance, total gate charge and on-
state resistance, and an independently connected
schottky diode with low forward voltage and reverse
leakage current to maximize boost efficiency.
• 2.9 A, 30 V RDS(ON) = 123 mΩ @ VGS = 4.5 V
RDS(ON) = 140 mΩ @ VGS = 3.0 V
= 163 mΩ @ VGS = 2.5 V
RDS(ON)
Schottky:
• VF < 0.46 V @ 500mA
• Low profile – 0.8 mm maximum – in the new package
MicroFET 2x2 mm
The MicroFET 2x2 package offers exceptional thermal
performance for its physical size and is well suited to
switching and linear mode applications.
)
•
HBM ESD protection level = 1.8kV typical (Note 3
• RoHS Compliant
PIN 1
A
NC
D
1
2
3
6
5
4
A
K
K
D
NC
D
G
S
K
G
S
MicroFET 2x2
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
Ratings
Units
VDS
VGS
ID
Drain-Source Voltage
Gate-Source Voltage
30
V
V
±12
2.9
Drain Current – Continuous (TC = 25°C, VGS = 4.5V)
– Continuous (TC = 25°C, VGS = 2.5V)
– Pulsed
2.7
A
10
PD
Power Dissipation for Single Operation
Power Dissipation for Single Operation
Operating and Storage Temperature
Schottky Repetitive Peak Reverse Voltage
Schottky Average Forward Current
(Note 1a)
(Note 1b)
1.5
W
0.65
TJ, TSTG
VRRM
IO
–55 to +150
°C
V
28
1
A
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1d)
83
RθJA
RθJA
RθJA
RθJA
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
193
101
228
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
8mm
Quantity
109
FDFMA3N109
7’’
3000 units
FDFMA3N109 Rev B3
©2008 Fairchild Semiconductor Corporation
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
30
V
VGS = 0 V,
ID = 250 µA
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
25
mV/°C
IDSS
Zero Gate Voltage Drain Current
Gate–Body Leakage Current
VDS = 24 V,
VGS = 0 V
1
µA
µA
IGSS
VGS = ± 12 V, VDS = 0 V
±10
On Characteristics
VGS(th)
Gate Threshold Voltage
0.4
1.0
–3
1.5
V
VDS = VGS
,
ID = 250 µA
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
ID = 250 µA, Referenced to 25°C
mV/°C
VGS = 4.5V, ID = 2.9A
75
84
123
140
163
166
203
268
VGS = 3.0V, ID = 2.7A
VGS = 2.5V, ID = 2.5A
92
Static Drain–Source
On–Resistance
RDS(on)
mΩ
VGS = 4.5V, ID = 2.9A, TC = 85°C
VGS = 3.0V, ID = 2.7A, TC = 150°C
VGS = 2.5V, ID = 2.5A, TC = 150°C
95
138
150
Dynamic Characteristics
Ciss
Input Capacitance
190
30
220
40
pF
pF
pF
Ω
V
DS = 15 V,
V GS = 0 V,
Coss
Output Capacitance
f = 1.0 MHz
Crss
RG
Reverse Transfer Capacitance
Gate Resistance
20
30
V GS = 0 V,
f = 1.0 MHz
4.6
Switching Characteristics (Note 2)
V
DD = 15 V,
ID = 1 A,
RGEN = 6 Ω
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
6
8
12
16
21
4
ns
ns
VGS = 4.5 V,
12
ns
2
ns
VDS = 15 V,
V
ID = 2.9 A,
Qg
Qgs
Qgd
2.4
0.35
0.75
3.0
nC
nC
nC
GS = 4.5 V
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
2.9
A
V
VSD
Drain–Source Diode Forward
Voltage
IS = 2.0 A
0.9
0.8
10
1.2
1.2
IS = 1.1 A
trr
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
IF = 2.9 A,
dIF/dt = 100 A/µs
ns
Qrr
2
nC
Schottky Diode Characteristics
100
4.7
10
µA
TJ = 25°C
TJ = 85°C
IR
Reverse Leakage
Forward Voltage
Forward Voltage
VR = 28 V
IF = 1 A
0.07
mA
0.50 0.57
0.49 0.60
0.40 0.46
0.36 0.43
TJ = 25°C
TJ = 85°C
VF
VF
V
V
TJ = 25°C
TJ = 85°C
IF = 500 mA
FDFMA3N109 Rev B3
Electrical Characteristics
TA = 25°C unless otherwise noted
Notes:
1. RθJA is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is
determined by the user's board design.
(a) MOSFET RθJA = 83°C/W when mounted on a 1in2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB
(b) MOSFET RθJA = 193°C/W when mounted on a minimum pad of 2 oz copper
(c) Schottky RθJA = 101°C/W when mounted on a 1in2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB
(d) Schottky RθJA = 228°C/W when mounted on a minimum pad of 2 oz copper
a) 83oC/W
when
b) 193oC/W
when
c)101 oC/W
when
b) 228oC/W
when
mounted on
a 1in2 pad
of 2 oz
mounted on
a minimum
pad of
mounted on
a 1in2 pad
of 2 oz
mounted on
a minimum
pad of
copper
2 oz copper
copper
2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
FDFMA3N109 Rev B3
Typical Characteristics
1.8
1.6
1.4
1.2
1
10
2.5V
VGS = 4.5V
VGS = 2.0V
8
6
4
2
0
2.7V
2.9V
3.5V
2.0V
2.5V
2.7V
2.9V
3.5V
4.0V
4.5V
1.5V
0.8
0
0.5
1
1.5
2
2.5
3
0
2
4
6
8
10
V
DS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.24
0.2
1.8
1.6
1.4
1.2
1
ID = 2.9A
ID = 1.45A
VGS = 4.5V
0.16
0.12
0.08
0.04
TA = 125oC
TA = 25oC
0.8
0.6
-50
-25
0
25
50
75
100
125
150
0
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
8
100
VGS = 0V
TA = -55oC
VDS = 5V
125oC
10
25oC
1
0.1
6
4
TA = 125oC
0.01
25oC
2
-55oC
0.001
0.0001
0
0.5
1
1.5
2
2.5
3
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
V
GS, GATE TO SOURCE VOLTAGE (V)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDFMA3N109 Rev B3
Typical Characteristics
300
250
200
150
100
50
10
f = 1MHz
VGS = 0 V
ID = 2.9A
8
VDS = 10V
20V
Ciss
6
15V
4
2
0
Coss
Crss
0
0
5
10
15
20
25
30
0
1
2
3
4
5
6
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.1
10
TJ = 125oC
0.01
1
TJ = 125oC
0.001
TJ = 100oC
TJ = 25oC
0.1
0.0001
0.00001
0.01
TJ = 25oC
0.001
0.000001
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0
5
10
15
20
25
30
VF, FORWARD VOLTAGE (V)
VR, REVERSE VOLTAGE (V)
Figure 9. Schottky Diode Forward Voltage.
Figure 10. Schottky Diode Reverse Current.
1
D = 0.5
Rθ (t) = r(t) * Rθ
JA
JA
RθJA =193°C/W
0.2
P(pk)
0.1
0.1
0.05
t1
0.02
0.01
t2
T
J - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDFMA3N109 Rev B3
Dimensional Outline and Pad Layout
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FDFMA3N109 Rev B3
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tm
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Marking Small Speakers Sound Louder
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®
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Rev. I68
FDFMA3N109 Rev B3
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