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July 2010

FDFME3N311ZT

Integrated N-Channel PowerTrench^®MOSFET and Schottky Diode

30 V, 1.8 A, 299 mΩ

Features

General Description

This device is designed specifically as a single package solution

for a boost topology in cellular handset and other ultra-portable

applications. It features a MOSFET with low input capacitance,

total gate charge and on-state resistance. An independently

connected schottky diode with low forward voltage and reverse

leakage current to maximize boost efficiency.

Max r_DS(on)= 299 mΩ at V_GS= 4.5 V, I_D= 1.6 A

Max r_DS(on)= 410 mΩ at V_GS= 2.5 V, I_D= 1.3 A

Low profile: 0.55 mm maximum in the new package

MicroFET 1.6x1.6 Thin

Free from halogenated compounds and antimony oxides

HBM ESD protection level > 1600 V (Note 3)

RoHS Compliant

The MicroFET 1.6x1.6 Thin package offers exceptional thermal

performance for it's physical size and is well suited to switching

and linear mode applications.

Application

Boost Functions

D

NC

A

D

Pin1

K

S

G

K

TOP

BOTTOM

MicroFET 1.6x1.6 Thin

MOSFET Maximum Ratings T_A= 25 °C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

30

V

±12

Drain Current

-Continuous

-Pulsed

T_A= 25 °C

(Note 1a)

1.8

I_D

A

4.5

Power Dissipation for Single Operation

Schottky Repetitive Peak Reverse Voltage

Schottky Average Forward Current

T_A= 25 °C

(Note 1a)

(Note 1b)

1.4

P_D

W

0.6

V_RRM

I_O

28

1

V

A

T_J, T_STG

Operating and Storage Junction Temperature Range

(Note 4)

-55 to +150

°C

Thermal Characteristics

R_θJA

Thermal Resistance, Junction to Ambient (Single Operation)

(Note 1a)

(Note 1b)

(Note 1c)

(Note 1d)

90

Thermal Resistance, Junction to Ambient (Single Operation)

195

110

234

°C/W

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

7’’

Tape Width

8mm

Quantity

1T

FDFME3N311ZT

MicroFET 1.6x1.6 Thin

5000 units

FDFME3N311ZT Rev.C3

www.fairchildsemi.com

1

Electrical Characteristics T_J= 25 °C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

BV_DSS

Drain to Source Breakdown Voltage

I_D= 250 μA, V_GS= 0 V

30

V

ΔBV_DSS

ΔT_J

Breakdown Voltage Temperature

Coefficient

I

_D= 250 μA, referenced to 25 °C

25

mV/°C

I_DSS

I_GSS

Zero Gate Voltage Drain Current

Gate to Source Leakage Current

V_DS= 24 V, V_GS= 0 V

V_GS= ±12 V, V_DS= 0 V

1

μA

±10

On Characteristics

V_GS(th)

Gate to Source Threshold Voltage

V_GS= V_DS, I_D= 250 μA

0.5

1

1.5

V

ΔV_GS(th)

ΔT_J

Gate to Source Threshold Voltage

Temperature Coefficient

I

_D= 250 μA, referenced to 25 °C

-3

mV/°C

V

_GS= 4.5 V, I_D= 1.6 A

235

296

365

2.8

299

410

603

r_DS(on)

g_FS

Drain to Source On Resistance

Forward Transconductance

V_GS= 2.5 V, I_D= 1.3 A

mΩ

V_GS= 4.5 V, I_D= 1.6 A,T_J= 125 °C

V_DS= 5 V, I_D= 1.6 A

S

Dynamic Characteristics

C_iss

C_oss

C_rss

R_g

Input Capacitance

55

15

7

75

20

10

pF

Ω

V_DS= 15 V, V_GS= 0 V,

f = 1 MHz

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

7.5

Switching Characteristics

t_d(on)

t_r

t_d(off)

t_f

Turn-On Delay Time

Rise Time

6

8

12

16

35

10

1.4

ns

V_DD= 15 V, I_D= 1.6 A,

V

_GS= 4.5 V, R_GEN= 6 Ω

Turn-Off Delay Time

Fall Time

22

1.4

1

ns

Q_g

Total Gate Charge

Gate to Source Gate Charge

Gate to Drain “Miller” Charge

nC

V_GS= 4.5 V, V_DD= 15 V,

_D= 1.6 A

Q_gs

Q_gd

0.2

0.3

I

Drain-Source Diode Characteristics

V_SD

t_rr

Source to Drain Diode Forward Voltage

Reverse Recovery Time

V_GS= 0 V, I_S= 0.9 A

(Note 2)

0.9

12

1.2

22

10

V

ns

nC

I_F= 1.6 A, di/dt = 100 A/μs

Q_rr

Reverse Recovery Charge

3.1

Schottky Diode Characteristics

15

100

4.7

μA

T_J= 25 °C

V_R= 28 V

I_R

Reverse Leakage

Forward Voltage

T_J= 85 °C

0.46

0.47

0.45

0.38

0.33

mA

0.57

T_J= 25 °C

I_F= 1 A

V_F

V

T_J= 85 °C

0.48

T_J= 25 °C

I_F= 500 mA

T_J= 85 °C

FDFME3N311ZT Rev.C3

www.fairchildsemi.com

2

Electrical Characteristics

Notes:

2

1. R

is determined with the device mounted on a 1 in oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

is guaranteed by design while R

is determined by the

θJA

θJC

θJA

user's board design.

2

(a) MOSFET R

(b) MOSFET R

= 90 °C/W when mounted on a 1 in pad of 2 oz copper, 1.5 " x 1.5 " x 0.062 " thick PCB.

θJA

= 195 °C/W when mounted on a minimum pad of 2 oz copper.

2

θJA

(c) Schottky R

(d) Schottky R

= 110 °C/W when mounted on a 1 in pad of 2 oz copper, 1.5 " x 1.5 " x 0.062" thick PCB.

= 234 °C/W when mounted on a minimum pad of 2 oz copper.

θJA

b. 195 °C/W when mounted on a

minimum pad of 2 oz copper.

a. 90 °C/W when mounted on

a 1 in pad of 2 oz copper.

2

d. 234 °C/W when mounted on a

minimum pad of 2 oz copper.

c. 110 °C/W when mounted on

a 1 in pad of 2 oz copper.

2

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied.

4. Rating is applicable to MOSFET only.

FDFME3N311ZT Rev.C3

www.fairchildsemi.com

3

Typical Characteristics T_J= 25°C unless otherwise noted

4

2.5

2.0

1.5

1.0

0.5

V_GS= 6 V

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

V_GS= 4.5 V

V_GS= 3.5 V

3

V_GS= 1.8 V

V_GS= 3 V

V_GS= 2.5 V

2

V_GS= 2.5 V

1

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

V_GS= 4.5 V

V_GS= 6 V

V_GS= 3 V V_GS= 3.5 V

V_GS= 1.8 V

0

1

2

3

0

1

2

3

4

V_DS, DRAIN TO SOURCE VOLTAGE (V)

I_D, DRAIN CURRENT (A)

Figure 1. On Region Characteristics

Figure2. N o r m a l i z e d O n - R e s i s ta n c e

vs Drain Current and Gate Voltage

1.8

1000

I_D= 1.6 A

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

V_GS= 4.5 V

1.6

1.4

1.2

1.0

0.8

0.6

800

600

400

200

0

I_D= 1.6 A

T_J= 125 ^oC

T_J= 25 ^oC

3.0

-50 -25

0

25

50

75

100 125 150

1.5

2.0

2.5

3.5

4.0

4.5

T_J, JUNCTION TEMPERATURE (^oC)

V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 3. Normalized On Resistance

vs Junction Temperature

Figure4. On-Resistance vs Gate to

Source Voltage

4

10

V_GS= 0 V

T_J= 150 ^oC

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

3

1

0.1

V_DS= 5 V

T_J= 25 ^o

C

2

T_J= 150 ^o

C

1

0.01

T_J= -55 ^o

C

T_J= 25 ^o

C

T_J= -55 ^oC

2

0

0.001

1

3

4

0.2

0.4

0.6

0.8

1.0

1.2

V_GS, GATE TO SOURCE VOLTAGE (V)

V_SD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics

Figure6. Source to Drain Diode

Forward Voltage vs Source Current

FDFME3N311ZT Rev.C3

www.fairchildsemi.com

4

Typical Characteristics T_J= 25°C unless otherwise noted

4.5

100

I_D= 1.6 A

C_iss

V_DD= 10 V

3.0

V_DD= 15 V

C_oss

V_DD= 20 V

1.5

C_rss

10

4

f = 1 MHz

= 0 V

V

GS

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0.1

1

10

30

Q , GATE CHARGE (nC)

g

V_DS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics

Figure8. C a p a c i t a n c e v s D r a i n

to Source Voltage

10

10^-2

10^-3

10^-4

10^-5

10^-6

10^-7

10^-8

10^-9

V_DS= 0 V

100 us

1

0.1

1 ms

T_J= 150 ^oC

10 ms

THIS AREA IS

LIMITED BY r_DS(on)

100 ms

1 s

10 s

DC

SINGLE PULSE

T_J= MAX RATED

0.01

R

_θJA= 195 ^oC/W

T_A= 25 ^oC

T_J= 25 ^o

C

0.001

0.1

1

10

100

0

5

10

15

20

V_DS, DRAIN to SOURCE VOLTAGE (V)

V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 9. Forward Bias Safe

Operating Area

Figure 10. Gate Leakage Current vs

Gate to Source Voltage

10^-2

10^-3

10^-4

10^-5

10^-6

5

T_J= 125 ^o

C

1

T_J= 125 ^oC

T_J= 100 ^o

0.1

T_J= 25 ^oC

0.01

T_J= 25 ^o

C

0.001

0.0

0.2

0.4

0.6

0.8

0

5

10

15

20

25

30

V_R, REVERSE VOLTAGE (V)

V_F,FORWARD VOLTAGE (mV)

Figure 11. Schottky Diode Reverse Current

Figure 12. Schottky Diode Forward Voltage

FDFME3N311ZT Rev.C3

www.fairchildsemi.com

5

Typical Characteristics T_J= 25°C unless otherwise noted

100

10

1

SINGLE PULSE

R_θJA= 195^oC/W

T

_A= 25^oC

0.1

10^-4

10^-3

10^-2

10^-1

1

10

100

1000

t, PULSE WIDTH (s)

Figure 13. Single Pulse Maximum Power Dissipation

2

1

DUTY CYCLE-DESCENDING ORDER

D = 0.5

0.2

0.1

P

0.05

0.02

0.01

DM

t

0.1

1

t

2

NOTES:

DUTY FACTOR: D = t /t

1

2

SINGLE PULSE

_θJA= 195 ^oC/W

PEAK T = P

J

x Z

x R

+ T

DM

θJA

θJA A

R

0.01

10^-4

10^-3

10^-2

10^-1

t, RECTANGULAR PULSE DURATION (s)

1

10

100

1000

Figure 14. Junction-to-Ambient Transient Thermal Response Curve

FDFME3N311ZT Rev.C3

www.fairchildsemi.com

6

Dimensional Outline and Pad Layout

FDFME3N311ZT Rev.C3

www.fairchildsemi.com

7

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intended to be an exhaustive list of all such trademarks.

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Build it Now™

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CTL™

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Global Power Resource

Green FPS™

Green FPS™ e-Series™

Gmax™

Power-SPM™

PowerTrench

PowerXS™

®*

®

SM

®

The Power Franchise

®

Programmable Active Droop™

®

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QS™

Quiet Series™

TinyBoost™

TinyBuck™

TinyCalc™

GTO™

Current Transfer Logic™

IntelliMAX™

ISOPLANAR™

MegaBuck™

MICROCOUPLER™

MicroFET™

RapidConfigure™

®

™

DEUXPEED

®

TinyLogic

Dual Cool™

TINYOPTO™

TinyPower™

TinyPWM™

®

EcoSPARK

Saving our world, 1mW/W/kW at a time™

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®

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MicroPak2™

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MotionMax™

Motion-SPM™

OptiHiT™

SMART START™

TriFault Detect™

TRUECURRENT™*

μSerDes™

®

SPM

®

STEALTH™

SuperFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SupreMOS™

SyncFET™

Fairchild

®

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FACT Quiet Series™

®

OPTOLOGIC

FACT

FAST

®

UHC

®

OPTOPLANAR

®

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VCX™

VisualMax™

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®

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FlashWriter

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*

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*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

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Datasheet contains the design specifications for product development. Specifications

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Semiconductor. The datasheet is for reference information only.

Not In Production

Rev. I48

FDFME3N311ZT Rev.C3

8

www.fairchildsemi.com

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

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型号：	FDFME3N311ZT
厂家：	ONSEMI
描述：	30V Integrated N-Channel PowerTrench® MOSFET and Schottky Diode
文件：	总10页 (文件大小：379K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

FDFME3N311ZT [ONSEMI]

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