FDD86369 [ONSEMI]
N 沟道，PowerTrench® MOSFET，80V，90A，7.9mΩ;
| 型号： | FDD86369 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® MOSFET，80V，90A，7.9mΩ 开关 晶体管 |
| 文件： | 总8页 (文件大小：1058K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Is Now Part of
To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please
email any questions regarding the system integration to Fairchild_questions@onsemi.com.
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
www.onsemi.com
FDD86369
®
N-Channel PowerTrench MOSFET
80 V, 90 A, 7.9 mΩ
Features
Typical R
= 5.9 mΩ at V = 10V, I = 80 A
GS D
DS(on)
D
Typical Q
= 34 nC at V = 10V, I = 80 A
g(tot)
GS
D
UIS Capability
RoHS Compliant
D
G
Applications
G
PowerTrain Management
S
Solenoid and Motor Drivers
Integrated Starter/Alternator
Primary Switch for 12V Systems
D-PAK
(TO-252)
S
For current package drawing, please refer to the ON website at
http://www.fairchildsemi.com/package‐drawings/
TO/TO252A03.pdf
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.
Symbol
VDSS
Parameter
Ratings
Units
Drain-to-Source Voltage
Gate-to-Source Voltage
80
V
V
VGS
±20
Drain Current - Continuous (VGS=10) (Note 1)
Pulsed Drain Current
TC = 25°C
TC = 25°C
90
ID
A
See Figure 4
EAS
PD
Single Pulse Avalanche Energy
(Note 2)
(Note 3)
29
150
mJ
W
W/oC
oC
oC/W
oC/W
Power Dissipation
Derate Above 25oC
1.0
TJ, TSTG Operating and Storage Temperature
-55 to + 175
1.0
RθJC
RθJA
Thermal Resistance, Junction to Case
Maximum Thermal Resistance, Junction to Ambient
52
Notes:
1: Current is limited by bondwire configuration.
2: Starting T = 25°C, L = 14μH, I = 64A, V = 80V during inductor charging and V = 0V during time in avalanche.
J
AS
DD
DD
3: R
is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder
θJA
mounting surface of the drain pins.
presented here is based on mounting on a 1 in pad of 2oz copper.
R
is guaranteed by design, while R is determined by the board design. The maximum rating
θJC θJA
2
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDD86369
FDD86369
D-PAK(TO-252)
13”
16 mm
2500 units
Semiconductor Components Industries, LLC, 2017
January, 2017, Rev. 1.0
Publication Order Number:
FDD86369/D
1
Electrical Characteristics TJ = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVDSS
IDSS
Drain-to-Source Breakdown Voltage
Drain-to-Source Leakage Current
Gate-to-Source Leakage Current
ID = 250μA, VGS = 0V
80
-
-
-
-
-
-
1
V
V
DS= 8 0 V , T J = 25oC
μA
mA
nA
VGS = 0V
TJ = 175oC (Note 4)
-
1
IGSS
VGS = ±20V
-
±100
On Characteristics
VGS(th)
RDS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
VGS = VDS, ID = 250μA
2.0
2.7
5.9
4.0
7.9
V
TJ = 25oC
-
-
mΩ
mΩ
I
D = 80A,
GS= 10V
TJ = 175oC (Note 4)
13.0
17.4
V
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
-
-
-
-
-
2530
430
16
-
-
pF
pF
pF
Ω
VDS = 40V, VGS = 0V,
f = 1MHz
Coss
Crss
Rg
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
-
VGS = 0.5V, f = 1MHz
2.2
36
-
Qg(ToT)
Qg(th)
Qgs
Total Gate Charge
VGS = 0 to 10V
54
-
nC
nC
nC
nC
V
I
DD = 64V
D = 80A
Threshold Gate Charge
Gate-to-Source Gate Charge
Gate-to-Drain “Miller“ Charge
VGS = 0 to 2V
4.6
13
-
Qgd
8.5
-
Switching Characteristics
ton
td(on)
tr
Turn-On Time
Turn-On Delay
Rise Time
-
-
-
-
-
-
-
70
-
ns
ns
ns
ns
ns
ns
13
34
22
9
-
V
V
DD = 40V, ID = 80A,
GS = 10V, RGEN = 6Ω
td(off)
tf
Turn-Off Delay
Fall Time
-
-
toff
Turn-Off Time
-
46
Drain-Source Diode Characteristics
I
SD =80A, VGS = 0V
-
-
-
-
-
1.25
1.2
64
V
VSD
Source-to-Drain Diode Voltage
ISD = 40A, VGS = 0V
-
V
trr
Reverse-Recovery Time
49
40
ns
nC
IF = 80A, dISD/dt = 100A/μs
Qrr
Reverse-Recovery Charge
53
Note:
4: The maximum value is specified by design at T = 175°C. Product is not tested to this condition in production.
J
www.onsemi.com
2
Typical Characteristics
120
100
80
60
40
20
0
1.2
1.0
0.8
0.6
0.4
0.2
0.0
VGS = 10V
CURRENT LIMITED
BY SILICON
CURRENT LIMITED
BY PACKAGE
25
50
75
100
125
150
175
200
0
25
50
75
100
125
150
175
TC, CASE TEMPERATURE(oC)
TC, CASE TEMPERATURE(oC)
Figure 2. Maximum Continuous Drain Current vs.
Case Temperature
Figure 1. Normalized Power Dissipation vs. Case
Temperature
2
DUTY CYCLE - DESCENDING ORDER
1
D = 0.50
0.20
P
0.10
DM
0.05
0.02
t
0.01
1
0.1
t
2
NOTES:
DUTY FACTOR: D = t /t
SINGLE PULSE
1
2
PEAK T = P
x Z
x R
+ T
J
DM
θJA
θJA C
0.01
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 3. Normalized Maximum Transient Thermal Impedance
1000
TC = 25oC
VGS = 10V
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
175 - TC
I = I2
150
100
SINGLE PULSE
10
10-5
10-4
10-3
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION(s)
Figure 4. Peak Current Capability
www.onsemi.com
3
Typical Characteristics
500
100
1000
100
10
If R = 0
= (L)(I )/(1.3*RATED BV
t
AV
- V
)
AS
DSS
DD
If R
≠ 0
t
AV
= (L/R)ln[(I *R)/(1.3*RATED BV
- V ) +1]
AS
DSS DD
100us
OPERATION IN THIS
AREA MAY BE
STARTING TJ = 25oC
1
LIMITED BY r
DS(on)
10
1ms
10ms
100ms
STARTING TJ = 150oC
SINGLE PULSE
0.1
T
= MAX RATED
J
o
T
C
= 25 C
1
0.01
0.001
0.01
0.1
1
10
100
1
10
100 200
tAV, TIME IN AVALANCHE (ms)
VDS, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to ON Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
Figure 5. Forward Bias Safe Operating Area
200
400
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
VGS = 0 V
100
VDD = 5V
TJ = -55oC
150
TJ = 175oC
TJ = 175 o
C
TJ = 25 o
C
10
1
100
TJ = 25oC
50
0
0.1
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 7. Transfer Characteristics
Figure 8. Forward Diode Characteristics
200
150
100
50
200
80μs PULSE WIDTH
Tj=175oC
VGS
VGS
15V Top
10V
8V
7V
6V
15V Top
10V
8V
7V
6V
150
5.5V
5V Bottom
5.5V
5V Bottom
100
50
0
80μs PULSE WIDTH
Tj=25oC
0
0
1
2
3
4
5
0
1
2
3
4
5
VDS, DRAIN TO SOURCE VOLTAGE (V)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Saturation Characteristics
Figure 10. Saturation Characteristics
www.onsemi.com
4
Typical Characteristics
100
2.4
2.0
1.6
1.2
0.8
0.4
ID = 80A
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
80
60
40
20
0
TJ = 175oC
ID = 80A
VGS = 10V
TJ = 25oC
6
5
7
8
9
10
-80
-40
0
40
80
120
160
200
TJ, JUNCTION TEMPERATURE(oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 11. RDSON vs. Gate Voltage
Figure 12. Normalized RDSON vs. Junction
Temperature
1.5
1.10
VGS = VDS
ID = 5mA
I
D
= 250μA
1.2
0.9
0.6
0.3
0.0
1.05
1.00
0.95
0.90
-80
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
160
200
TJ, JUNCTION TEMPERATURE (oC)
TJ, JUNCTION TEMPERATURE(oC)
Figure 13. Normalized Gate Threshold Voltage vs.
Temperature
Figure 14. Normalized Drain to Source
Breakdown Voltage vs. Junction Temperature
10000
10
ID = 80A
VDD =32V
8
Ciss
VDD = 40V
1000
VDD = 48V
6
Coss
100
4
2
0
10
Crss
f = 1MHz
GS = 0V
V
1
0.1
1
10
100
0
5
10
15
20
25
30
35
40
Qg, GATE CHARGE(nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 15. Capacitance vs. Drain to Source
Voltage
Figure 16. Gate Charge vs. Gate to Source
Voltage
www.onsemi.com
5
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
© Semiconductor Components Industries, LLC
www.onsemi.com
相关型号：
©2020 ICPDF网 联系我们和版权申明