FDD86540 [ONSEMI]
N 沟道 PowerTrench® MOSFET 60V，136 A，4.1 mΩ;
| 型号： | FDD86540 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道 PowerTrench® MOSFET 60V，136 A，4.1 mΩ 开关 脉冲 晶体管 |
| 文件： | 总8页 (文件大小：451K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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March 2015
FDD86540
N-Channel PowerTrench® MOSFET
60 V, 136 A, 4.1 mΩ
Features
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers.It has been optimized
for low gate charge, low rDS(on), fast switching speed and body
diode reverse recovery performance.
Max rDS(on) = 4.1 mΩ at VGS = 10 V, ID = 21.5 A
Max rDS(on) = 5 mΩ at VGS = 8 V, ID = 19.5 A
100% UIL tested
RoHS Compliant
Applications
Primary Switch in isolated DC-DC
Synchronous Rectifier
Load Switch
D
D
G
G
S
D-PAK
(TO-252)
S
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
60
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
V
V
±20
TC = 25 °C
TC = 100 °C
TA = 25 °C
(Note 5)
(Note 5)
(Note 1a)
(Note 4)
(Note 3)
136
86
ID
A
-Continuous
21.5
240
-Pulsed
EAS
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
228
mJ
W
TC = 25 °C
TA = 25 °C
127
PD
(Note 1a)
3.1
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
0.98
40
°C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
13 ’’
Tape Width
16 mm
Quantity
FDD86540
FDD86540
D-PAK(TO-252)
2500 units
1
©2012 Fairchild Semiconductor Corporation
FDD86540 Rev. 1.2
www.fairchildsemi.com
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
60
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
I
D = 250 μA, referenced to 25 °C
28
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = 48 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
1
μA
±100
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
2
3.1
-11
4
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
I
D = 250 μA, referenced to 25 °C
mV/°C
V
GS = 10 V, ID = 21.5 A
3.4
4.1
5.2
75
4.1
5
rDS(on)
gFS
Static Drain to Source On Resistance
Forward Transconductance
VGS = 8 V, ID = 19.5 A
mΩ
VGS = 10 V, ID = 21.5 A, TJ = 125 °C
VDS = 10 V, ID = 21.5 A
6.3
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
4767
1409
48
6340
1880
90
pF
pF
pF
Ω
VDS = 30 V, VGS = 0 V,
f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
0.6
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
26
15
31
6.9
65
54
23
12
42
28
49
14
90
75
ns
ns
VDD = 30 V, ID = 21.5 A,
V
GS = 10 V, RGEN = 6 Ω
Turn-Off Delay Time
Fall Time
ns
ns
Qg
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VGS = 0 V to 10 V
VGS = 0 V to 8 V
nC
nC
nC
nC
Qg
VDD = 30 V,
D = 21.5 A
I
Qgs
Qgd
Drain-Source Diode Characteristics
V
GS = 0 V, IS = 21.5 A
(Note 2)
(Note 2)
0.8
0.7
56
1.3
1.2
90
V
V
VSD
Source-Drain Diode Forward Voltage
VGS = 0 V, IS = 2.6 A
trr
Reverse Recovery Time
ns
nC
IF = 21.5 A, di/dt = 100 A/μs
Qrr
Reverse Recovery Charge
43
69
Notes:
1: R
R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
is determined by the user’s board design.
θJA
θJA
b) 96 °C/W when mounted on
a minimum pad
a) 40 °C/W when mounted on a
1 in pad of 2 oz copper
2
2: Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3: Starting T = 25 °C, L = 0.3 mH, I = 39 A, V = 54 V, V = 10 V.
J
AS
DD
GS
4: Pulsed Id please refer to Fig 11 SOA graph for more details.
5: Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design.
©2012 Fairchild Semiconductor Corporation
FDD86540 Rev. 1.2
2
www.fairchildsemi.com
Typical Characteristics TJ = 25 °C unless otherwise noted
8
6
4
2
0
120
V
= 10 V
= 8 V
GS
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
V
= 6 V
GS
V
VGS = 5 V
GS
90
60
30
0
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 5.5 V
VGS = 6 V
V
= 5.5 V
GS
VGS = 8 V
V
= 5 V
VGS = 10 V
GS
0
1
2
3
4
5
0
30
60
90
120
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs Drain Current and Gate Voltage
20
1.7
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
ID = 21.5 A
VGS = 10 V
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
ID = 21.5 A
15
10
5
TJ = 125 o
C
TJ = 25 o
C
0
-75 -50 -25
0
25 50 75 100 125 150
4
5
6
7
8
9
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
F i gu re 3 . N orma li zed On - Res is ta nc e
vs Junction Temperature
Figure4. On-Resistance vs Gate to
Source Voltage
120
200
100
VGS = 0 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
10
90
60
30
0
VDS = 5 V
TJ = 150 o
C
1
TJ = 25 oC
TJ = 150 o
C
0.1
TJ = 25 o
C
TJ = -55 o
C
0.01
TJ = -55 o
C
0.001
2
3
4
5
6
7
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
©2012 Fairchild Semiconductor Corporation
FDD86540 Rev. 1.2
3
www.fairchildsemi.com
Typical Characteristics TJ = 25 °C unless otherwise noted
10
10000
1000
100
Ciss
VDD = 20 V
ID = 21.5 A
8
VDD = 30 V
Coss
6
VDD = 40 V
4
2
0
Crss
f = 1 MHz
GS = 0 V
V
10
0.1
0
10
20
30
40
50
60
70
1
10
60
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
140
120
100
80
100
10
1
RθJC = 0.98 oC/W
VGS = 10 V
VGS = 8 V
TJ = 25 o
C
60
TJ = 100 o
C
40
TJ = 125 o
C
20
0
25
50
75
100
125
150
0.01
0.1
1
10
100 300
TC, CASE TEMPERATURE (oC)
tAV, TIME IN AVALANCHE (ms)
Figure9. U n c l a m p e d I n d u c t i v e
Switching Capability
Figure10. Maximum Continuous Drain
Current vs Case Temperature
500
2000
SINGLE PULSE
θJC = 0.98 oC/W
C = 25 oC
R
100
10
1
1000
T
10 μs
100 μs
1 ms
THIS AREA IS
LIMITED BY rDS(on)
SINGLE PULSE
T
J = MAX RATED
θJC = 0.98 oC/W
C = 25 o
10 ms
DC
R
CURVE BENT TO
MEASURED DATA
T
C
0.1
0.1
100
10-5
10-4
10-3
t, PULSE WIDTH (sec)
10-2
10-1
1
1
10
100 200
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
Figure 12. Single Pulse Maximum
Power Dissipation
©2012 Fairchild Semiconductor Corporation
FDD86540 Rev. 1.2
4
www.fairchildsemi.com
Typical Characteristics TJ = 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
D = 0.5
1
0.2
0.1
0.05
0.02
0.01
P
DM
t
1
t
2
NOTES:
(t) = r(t) x R
Z
θJC
θJC
o
SINGLE PULSE
10-4
R
= 0.98 C/W
θJC
Peak T = P
Duty Cycle, D = t / t
x Z (t) + T
J
DM
θJC C
1
2
0.1
10-5
10-3
10-2
10-1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Case Transient Thermal Response Curve
©2012 Fairchild Semiconductor Corporation
FDD86540 Rev. 1.2
5
www.fairchildsemi.com
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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