FDD1600N10ALZD [ONSEMI]
BoostPak（N 沟道 PowerTrench® MOSFET + 二极管）100 V，6.8 A，160 mΩ;
| 型号： | FDD1600N10ALZD |
| 厂家： | 
ONSEMI |
| 描述： | BoostPak（N 沟道 PowerTrench® MOSFET + 二极管）100 V，6.8 A，160 mΩ 二极管 |
| 文件： | 总14页 (文件大小：1174K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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2014 年2 月
FDD1600N10ALZD
BoostPak （N 沟道PowerTrench MOSFET + 二极管）
100 V，6.8 A，160 mΩ
®
特性
•
说明
此N 沟道MOSFET采用飞兆半导体的PowerTrench® 工艺生产，
这一先进工艺是专为最大限度地降低导通电阻并保持卓越开关性
能而定制的。
RDS(on) = 124 mΩ (Typ.)@VGS = 10 V, ID = 3.4 A
•
RDS(on) = 175 mΩ (Typ.)@VGS = 5.0 V, ID = 2.1 A
• 低栅极电荷（典型值2.78 nC)
• 低Crss （典型值2.04 pF)
• 快速开关
NP 二极管为超快速整流器，具有低正向压降和出色的开关性
能。
应用
•
100% 经过雪崩测试
•
•
•
LED 显示器背光
LED 电视背光
LED 照明
• 改善的dv/dt 处理能力
• 符合RoHS 标准
• 消费类家用电器，
DC-DC 转换器（升压和降压）
3
3
1. 栅极
2. 源极
4,5
3. 漏极/ 阳极
4. 阴极
5. 阴极
1
1
2
4
TO252-5L
5
2
最大额定值 TC = 25°C 除非另有说明。
FDD1600N10ALZD
符号
参数
单位
VDSS
VGSS
100
±20
6.8
V
漏极－源极电压
栅极－源极电压
V
- 连续(TC = 25°C)
ID
A
漏极电流
4.3
- 连续(TC = 100°C)
- 脉冲
IDM
13.6
5.08
6.0
A
mJ
V/ns
W
漏极电流
（说明1）
（说明2）
（说明3）
EAS
dv/dt
单脉冲雪崩能量
二极管恢复dv/dt 峰值
(TC = 25°C)
14.9
0.12
4
PD
功耗
W/°C
A
- 降低至25°C 以上
IF
二极管连续正向电流(TC = 124°C)
二极管最大正向电流
IFM
40
A
TJ, TSTG
TL
°C
工作和存储温度范围
-55 至+150
300
°C
用于焊接的最大引线温度，距离外壳1/8"，持续5 秒
热性能
FDD1600N10ALZD
符号
RθJC
参数
MOSFET 结至外壳热阻最大值
二极管结至外壳热阻最大值
结至环境热阻最大值
单位
8.4
3.3
87
RθJC
°C/W
RθJA
www.fairchildsemi.com
© 2013 飞兆半导体公司
1
FDD1600N10ALZD Rev. C2
封装标识与定购信息
器件编号
顶标
1600N10ALZD
封装
包装方法
卷带
卷尺寸
带宽
数量
FDD1600N10ALZD
TO-252 5L
13”
16 mm
2500 装
MOSFET 的电气特性TC = 25°C 除非另有说明。
符号
参数
测试条件
最小值 典型值 最大值
单位
关断特性
BVDSS
ID = 250 μA, VGS = 0 V
D = 250 μA，温度参考25°C
VDS = 80 V, VGS = 0 V
100
-
-
-
-
V
漏极－源极击穿电压
ΔBVDSS
/ ΔTJ
击穿电压温度系数
I
0.1
V/°C
-
-
-
-
-
-
1
IDSS
IGSS
μA
μA
零栅极电压漏极电流
VDS = 80 V, VGS = 0 V, TC = 125°C
VGS = ±20 V, VDS = 0 V
500
±10
栅极- 源极漏电流
导通特性
VGS(th)
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 3.4 A
VGS = 5 V, ID = 2.1 A
VDS = 10 V, ID = 6.8 A
1.4
2.1
124
175
19.6
2.8
160
375
-
V
mΩ
S
栅极阈值电压
-
-
-
RDS(on)
gFS
漏极至源极静态导通电阻
正向跨导
动态特性
Ciss
-
-
-
169
43
225
pF
pF
pF
pF
nC
nC
nC
nC
V
输入电容
VDS = 50 V, VGS = 0 V,
f = 1 MHz
Coss
55
输出电容
Crss
2.04
85
-
反向传输电容
Coss(er)
Qg(tot)
Qg(tot)
Qgs
VDS = 50 V, VGS = 0 V
VGS = 10 V
-
能量相关输出电容
10 V 的栅极电荷总量
5 V 的栅极电荷总量
栅极- 源极栅极电荷
栅极- 漏极“ 米勒” 电荷
栅极平台电压
-
2.78
1.5
3.61
V
DD = 50 V,
VGS = 5 V
1.95
I
D = 6.8 A
-
-
-
-
-
0.72
0.56
4.02
2.5
-
-
-
-
-
Qgd
（说明4）
Vplateau
Qsync
Qoss
VDS = 0 V, ID = 3.4 A
nC
nC
总栅极电荷同步
输出电荷
VDS = 50 V, VGS = 0 V
5.2
开关特性
td(on)
tr
td(off)
tf
-
-
-
-
-
7
2
24
14
36
14
-
ns
ns
ns
ns
Ω
导通延迟时间
开通上升时间
关断延迟时间
关断下降时间
等效串联电阻(G-S)
VDD = 50 V, ID = 6.8 A,
V
GS = 10 V, RG = 4.7 Ω
13
2
（说明4）
ESR
f = 1 MHz
2.1
漏极- 源极二极管特性
IS
-
-
-
-
-
-
-
6.8
13.6
1.3
-
A
A
漏极- 源极二极管最大正向连续电流
漏极- 源极二极管最大正向脉冲电流
漏极- 源极二极管正向电压
反向恢复时间
ISM
VSD
trr
VGS = 0 V, ISD = 6.8 A
-
V
37
42
ns
nC
VGS = 0 V, ISD = 6.8 A, VDS = 50 V,
dIF/dt = 100 A/μs
Qrr
-
反向恢复电荷
注意：
1. 重复额定值：脉冲宽度受限于最大结温。
2. L = 1 mH，I = 3.18 A，R = 25 Ω，启动T = 25°C。
AS
G
J
3. I ≤ 6.8 A，di/dt ≤ 200 A/μs，V ≤ BV
，启动T = 25°C。
SD
DD
DSS
J
4. 本质上独立于工作温度的典型特性。
www.fairchildsemi.com
© 2013 飞兆半导体公司
2
FDD1600N10ALZD Rev. C2
二极管的电气特性TC = 25°C 除非另有说明。
符号
参数
测试条件
最小值 典型值 最大值
单位
VR
IR = 1 mA
IF = 4 A
150
-
-
-
V
直流阻断电压
T
C = 25°C
-
-
2.5
VFM
V
uA
ns
A
最大瞬时正向电压
TC = 125°C
TC = 25°C
TC = 125°C
1.01
-
-
-
50
IRM
trr
最大瞬时反向电流@ 额定值VR
二极管反向恢复时间
-
-
1000
T
C = 25°C
TC = 125°C
C = 25°C
TC = 125°C
C = 25°C
TC = 125°C
-
12.7
17.1
2.6
3.8
18.3
35.7
-
26
-
-
IF = 4 A,
dI/dt = 200 A/μs
T
-
6
-
Irr
二极管反向恢复峰值电流
-
T
-
-
Qrr
nC
mJ
二极管反向恢复电荷
-
-
WAVL
10
-
雪崩能量(L = 40 mH)
www.fairchildsemi.com
© 2013 飞兆半导体公司
3
FDD1600N10ALZD Rev. C2
典型性能特征- MOSFET
图1. 导通区域特性
图2. 传输特性
14
14
10
*Notes:
10
1. VDS = 10V
2. 250μs Pulse Test
150oC
25oC
1
VGS = 15.0V
10.0V
8.0V
6.0V
5.0V
4.5V
4.0V
3.5V
1
-55oC
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
0.3
0.3
0.1
1
5
1
2
3
4
5
6
VDS, Drain-Source Voltage[V]
VGS, Gate-Source Voltage[V]
图3. 导通电阻变化vs. 漏极电流和栅极电压
图4. 体二极管正向电压变化vs. 源极电流和温度
400
14
10
300
VGS = 5V
150oC
200
VGS = 10V
25oC
100
*Notes:
1. VGS = 0V
*Note: TC = 25oC
15 20
2. 250μs Pulse Test
0
1
0.3
0
5
10
0.6
0.9
1.2
1.5
ID, Drain Current [A]
VSD, Body Diode Forward Voltage [V]
图5. 电容特性
300
图6. 栅极电荷特性
8
VDS = 20V
VDS = 50V
VDS = 80V
Ciss
Coss
Crss
100
6
4
2
0
*Note:
1. VGS = 0V
2. f = 1MHz
10
C
C
C
= C + C (C = shorted)
gs gd ds
iss
= C + C
ds
oss
rss
gd
= C
gd
*Note: ID = 3.4A
1
0.1
0
0.5
1.0
1.5
2.0
2.5
3.0
1
10
100
Qg, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
www.fairchildsemi.com
© 2013 飞兆半导体公司
4
FDD1600N10ALZD Rev. C2
典型性能特征- MOSFET （续）
图7. 击穿电压变化vs. 温度
图8. 导通电阻变化vs. 温度
1.10
2.4
2.0
1.6
1.2
0.8
0.4
1.05
1.00
0.95
*Notes:
1. VGS = 0V
*Notes:
1. VGS = 10V
2. ID = 250μA
2. ID = 3.4A
0.90
-80
-40
0
40
80
120
160
-80
-40
0
40
80
120
160
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
图9. 最大安全工作区
图10. 最大漏极电流vs. 外壳温度
30
8
10
100us
6
VGS = 10V
1ms
1
10ms
4
VGS = 5V
Operation in This Area
is Limited by R DS(on)
100ms
DC
SINGLE PULSE
0.1
TC = 25oC
TJ = 150oC
2
RθJC = 8.4oC/W
RθJC = 8.4oC/W
0.01
0
25
1
10
VDS, Drain-Source Voltage [V]
100 200
50
75
100
125
150
TC, Case Temperature [oC]
图11. Eoss 与漏极至源极电压
图12. 非箝位感性开关能力
0.25
8
7
6
5
0.20
0.15
0.10
0.05
0
4
3
TJ = 25 o
C
TJ = 125 o
C
2
1
0.001
0.01
0.1
1
0
20
40
60
80
100
tAV, TIME IN AVALANCHE (ms)
VDS, Drain to Source Voltage [V]
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© 2013 飞兆半导体公司
5
FDD1600N10ALZD Rev. C2
典型性能特征- 二极管（续）
图13. 正向压降与正向电流
40
图14. 反向电流与反向电压
100
TC = 125oC
10
10
1
TC = 125oC
TC = 75oC
TC = 25oC
TC = 75oC
TC = 25oC
1
0.1
0.01
0.1
0.0
0.005
0.5
1.0
1.5
2.0
2.5
10 20
40
60
80
100
120
Forward Voltage, VF [V]
Reverse Voltage, VR [V]
图15. 结电容
125
图16. 反向恢复时间与di/dt
20
IF = 4A
Typical Capacitance
at 0V = 121 pF
18
100
75
TC = 125oC
TC = 75oC
15
50
TC = 25oC
12
25
10
100
0
0.1
200
300
di/dt [A/μs]
400
500
1
10
100
Reverse Voltage, VR [V]
图17. 反向恢复电流与di/dt
10
图18. 正向电流降额曲线
25
20
15
10
5
8
T
= 125oC
C
TC = 75oC
6
4
2
0
T
= 25oC
C
IF = 4A
500
0
25
50
75
100
125
150
100
200
300
di/dt [A/μs]
400
Case temperature, TC [oC]
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© 2013 飞兆半导体公司
6
FDD1600N10ALZD Rev. C2
典型性能特征（接上页）
图19. 瞬态热响应曲线MOSFET
20
10
0.5
0.2
PDM
0.1
1
t1
0.05
t2
0.02
0.01
*Notes:
1. ZθJC(t) = 8.4oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
Single pulse
0.1
10-5
10-4
10-3
10-2
10-1
1
t
1，矩形脉冲持续时间[ 秒]
图20. 瞬态热响应曲线二极管
4
1
0.5
0.2
0.1
PDM
0.05
0.02
0.01
t1
0.1
t2
*Notes:
Single pulse
1. ZθJC(t) = 3.3oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
0.01
10-5
10-4
10-3
10-2
10-1
1
t1，矩形脉冲持续时间[ 秒]
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© 2013 飞兆半导体公司
7
FDD1600N10ALZD Rev. C2
I
= 常量
G
图21. 栅极电荷测试电路与波形
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
图22. 阻性开关测试电路与波形
VGS
图23. 非箝位感性开关测试电路与波形
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© 2013 飞兆半导体公司
8
FDD1600N10ALZD Rev. C2
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
图24. 二极管恢复dv/dt 峰值测试电路与波形
www.fairchildsemi.com
© 2013 飞兆半导体公司
FDD1600N10ALZD Rev. C2
9
VCC
Driver
VGS
(Driver)
t
t
VGS
(D UT)
10V
VDD
VR
G
DUT
RG
1
Qsync =
t dt
( )
⋅ V
RG
VGS
RG
图25. 总栅极电荷Qsync. 测试电路与波形
www.fairchildsemi.com
© 2013 飞兆半导体公司
FDD1600N10ALZD Rev. C2
10
机械尺寸
图26. TO252 (D-PAK)，模塑，5 引脚，选项AD
封装图纸作为一项服务，提供给考虑飞兆半导体元件的客户。具体参数可能会有变化，且不会做出相应通知。请注意图纸上的版本和 /
或日期，并联系飞兆半导体代表核实或获得最新版本。封装规格并不扩大飞兆公司全球范围内的条款与条件，尤其是其中涉及飞兆公司
产品保修的部分。
随时访问飞兆半导体在线封装网页，可以获取最新的封装图纸：
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT252-005
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© 2013 飞兆半导体公司
11
FDD1600N10ALZD Rev. C2
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PowerXS™
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Quiet Series™
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TinyBuck
®
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Green FPS™ e-Series™
Gmax™
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TinyCalc™
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®
®
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FDD1600N10ALZD Rev. C2
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