FDC637BNZ [ONSEMI]
N 沟道 PowerTrench® MOSFET，2.5V 指定，20V，6.2A，24mΩ;
| 型号： | FDC637BNZ |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道 PowerTrench® MOSFET，2.5V 指定，20V，6.2A，24mΩ PC 开关 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：474K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
September 2007
FDC637BNZ
tm
N-Channel 2.5V Specified PowerTrench® MOSFET
20V, 6.2A, 24mΩ
Features
General Description
Max rDS(on) = 24mΩ at VGS = 4.5V, ID = 6.2A
Max rDS(on) = 32mΩ at VGS = 2.5V, ID = 5.2A
Fast switching speed
This N-Channel 2.5V specified MOSFET is produced using
Fairchild Semiconductor’s advanced PowerTrench® process
that has been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for superior
switching performance.
Low gate charge (8nC typical)
These devices have been designed to offer exceptional power
dissipation in a very small footprint compared with bigger SO-8
and TSSOP-8 packages.
High performance trench technology for extremely low rDS(on)
SuperSOT™–6 package: small footprint (72% smaller than
standard SO-8; low profile (1mm thick)
HBM ESD protection level > 2kV typical (Note 3)
Manufactured using green packaging material
Halide-Free
Applications
DC - DC Conversion
Load switch
RoHS Compliant
Battery Protection
S
D
D
1
6
D
D
D
G
2
3
5
4
D
S
G
D
D
Pin 1
SuperSOTTM -6
MOSFET Maximum Ratings TA= 25°C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
20
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
V
V
±12
6.2
TA = 25°C
(Note 1a)
ID
A
20
Power Dissipation
TA = 25°C
TA = 25°C
(Note 1a)
(Note 1b)
1.6
PD
W
Power Dissipation
0.8
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1a)
(Note 1b)
78
°C/W
156
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
8mm
Quantity
.637Z
FDC637BNZ
SSOT6
7’’
3000 units
1
©2007 Fairchild Semiconductor Corporation
FDC637BNZ Rev.C
www.fairchildsemi.com
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250µA, VGS = 0V
20
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250µA, referenced to 25°C
10
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = 16V, VGS = 0V
VGS = ±12V, VDS = 0V
1
µA
µA
±10
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250µA
0.6
0.8
-3
1.5
V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250µA, referenced to 25°C
mV/°C
VGS = 4.5V, ID = 6.2A
21
26
30
27
24
32
41
rDS(on)
gFS
Static Drain to Source On Resistance
Forward Transconductance
VGS = 2.5V, ID = 5.2A
mΩ
VGS = 4.5V, ID = 6.2A, TJ = 125°C
VDD = 5V, ID = 6.2A
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
670
160
115
2.1
895
215
175
pF
pF
pF
Ω
VDS = 10V, VGS = 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
8
6
16
12
36
12
12
ns
ns
VDD = 10V, ID = 6.2A
VGS = 4.5V, RGEN = 6Ω
Turn-Off Delay Time
Fall Time
22
6
ns
ns
Qg
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
8
nC
nC
nC
VGS = 4.5V, VDD = 10V,
ID = 6.2A
Qgs
Qgd
1.3
2.2
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain-Source Diode Forward Current
Source to Drain Diode Forward Voltage VGS = 0V, IS = 1.3A
1.3
1.2
27
A
V
VSD
trr
(Note 2)
0.7
15
5
Reverse Recovery Time
ns
nC
IF = 6.2A, di/dt = 100A/µs
Qrr
Reverse Recovery Charge
10
Notes:
2
1. R
is determined with the device mounted on a 1in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R is determined by
θJA
θJA
θJC
the user's board design.
b. 156°C/W when mounted on a
minimum pad of 2 oz copper.
a. 78°C/W when mounted on a
1 in pad of 2 oz copper.
2
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
©2007 Fairchild Semiconductor Corporation
FDC637BNZ Rev.C
www.fairchildsemi.com
2
Typical Characteristics TJ = 25°C unless otherwise noted
20
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = 1.5V
VGS = 2V
VGS = 4.5V
16
VGS = 2.5V
VGS = 1.8V
12
8
VGS = 1.8V
VGS = 2V
VGS = 2.5V
4
VGS = 1.5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = 4.5V
16
0
0
1
2
3
4
0
4
8
12
20
4.5
1.2
ID, DRAIN CURRENT(A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs Drain Current and Gate Voltage
1.6
150
ID = 6.2A
GS = 4.5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
ID = 6.2A
V
1.4
1.2
1.0
0.8
0.6
120
90
60
30
0
TJ = 125oC
TJ = 25oC
1.0
1.5
2.0
2.5
3.0
3.5
4.0
-75 -50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
F i gu re 3 . N orma li zed On - Res is ta nc e
vs Junction Temperature
Figure4. On-Resistance vs Gate to
Source Voltage
20
20
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
10
1
VGS = 0V
16
VDS = 5V
TJ = 150oC
12
TJ = 25oC
0.1
TJ = 150oC
TJ = 25oC
8
4
0
TJ = -55oC
0.01
TJ = -55oC
2.0
1E-3
0.0
0.5
1.0
1.5
2.5
0.0
0.2
0.4
0.6
0.8
1.0
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
Figure 5. Transfer Characteristics
©2007 Fairchild Semiconductor Corporation
FDC637BNZ Rev.C
www.fairchildsemi.com
3
Typical Characteristics TJ = 25°C unless otherwise noted
4.5
2000
1000
ID = 6.2A
4.0
VDD = 5V
Ciss
3.5
3.0
VDD = 10V
2.5
VDD = 15V
Coss
2.0
1.5
1.0
0.5
0.0
Crss
100
50
f = 1MHz
= 0V
V
GS
0.1
1
10
20
0.0
1.5
3.0
4.5
6.0
7.5
9.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE(nC)
g
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
105
30
10
104
103
102
101
100
10-1
10-2
10-3
VDS = 0V
100us
1ms
1
0.1
TJ = 150oC
THIS AREA IS
10ms
LIMITED BY r
DS(on)
100ms
1s
10s
DC
SINGLE PULSE
TJ = MAX RATED
RθJA = 156oC/W
TA = 25oC
TJ = 25oC
0.01
0.1
1
10
50
0
3
6
9
12
15
18
VDS, DRAIN to SOURCE VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 9. Gate Leakage Current vs Gate to
Source Voltage
Figure10. Forward Bias Safe
Operating Area
1000
VGS = 4.5V
SINGLE PULSE
RθJA = 156oC/W
T
A = 25oC
100
10
1
0.5
10-4
10-3
10-2
10-1
t, PULSE WIDTH (s)
100
101
102
103
Figure 11. Single Pulse Maximum Power Dissipation
©2007 Fairchild Semiconductor Corporation
FDC637BNZ Rev.C
www.fairchildsemi.com
4
Typical Characteristics TJ = 25°C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
0.02
P
DM
0.1
0.01
t
1
t
2
0.01
NOTES:
DUTY FACTOR: D = t /t
1 2
SINGLE PULSE
PEAK T = P
J
x Z
x R
+ T
θJA A
R
θJA = 156oC/W
DM
θJA
1E-3
10-4
10-3
10-2
10-1
100
101
102
103
t, RECTANGULAR PULSE DURATION (s)
Figure 12. Transient Thermal Response Curve
©2007 Fairchild Semiconductor Corporation
FDC637BNZ Rev.C
www.fairchildsemi.com
5
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Build it Now™
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Programmable Active Droop™
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Current Transfer Logic™
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As used herein:
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provided in the labeling, can be reasonably expected to
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
Advance Information
Formative or In Design
This datasheet contains preliminary data; supplementary data will be pub-
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
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First Production
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the right to make changes at any time without notice to improve design.
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Obsolete
This datasheet contains specifications on a product that has been discontin-
ued by Fairchild Semiconductor. The datasheet is printed for reference infor-
mation only.
Rev. I31
©2007 Fairchild Semiconductor Corporation
FDC637BNZ Rev.C
www.fairchildsemi.com
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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