FDC638APZ [ONSEMI]
P 沟道，PowerTrench® MOSFET，2.5V 指定，-20V，-4.5A，43mΩ;
| 型号： | FDC638APZ |
| 厂家： | 
ONSEMI |
| 描述： | P 沟道，PowerTrench® MOSFET，2.5V 指定，-20V，-4.5A，43mΩ PC 脉冲 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：588K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
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or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDC638APZ
P-Channel 2.5V PowerTrench® Specified MOSFET
General Description
–20V, –4.5A, 43mΩ
Features
This P-Channel 2.5V specified MOSFET is produced using
ON Semiconductor’s advanced PowerTrench® process
that has been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for superior
switching performance
Max rDS(on) = 43mΩ at VGS = –4.5V, ID = –4.5A
Max rDS(on) = 68mΩ at VGS = –2.5V, ID = –3.8A
Low gate charge (8nC typical).
These devices are well suited for battery power applications:load
switching and power management,battery charging circuits,and
DC/DC conversion.
High performance trench technology for extremely low rDS(on).
SuperSOTTM –6 package:small footprint (72% smaller than
standard SO–8) low profile (1mm thick).
Application
RoHS Compliant
DC - DC Conversion
S
D
D
D
G
D
6
5
4
1
2
D
D
G
D
S
D
3
3
Pin 1
SuperSOTTM -6
MOSFET Maximum Ratings TA= 25°C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
–20
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
V
V
±12
(Note 1a)
–4.5
ID
A
–20
Power Dissipation
(Note 1a)
(Note 1b)
1.6
PD
W
Power Dissipation
0.8
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1a)
78
°C/W
(Note 1b)
156
Package Marking and Ordering Information
Device Marking
Device
Reel Size
7’’
Tape Width
Quantity
.638Z
FDC638APZ
8mm
3000 units
1
©2006 Semiconductor Components Industries, LLC.
October-2017, Rev.2
Publication Order Number:
FDC638APZ/D
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = –250µA, VGS = 0V
D = –250µA, referenced to 25°C
DS = –16V,
–20
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
I
–9.4
mV/°C
V
–1
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
µA
µA
VGS = 0V
TJ = 55°C
–10
±10
VGS = ±12V, VDS = 0V
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = –250µA
–0.4
–20
–0.8
2.9
–1.5
V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = –250µA, referenced to 25°C
mV/°C
V
GS = –4.5V, ID = –4.5A
37
52
50
43
68
72
rDS(on)
Static Drain to Source On Resistance
VGS = –2.5V, ID = –3.8A
mΩ
VGS = –4.5V, ID = –4.5A, TJ = 125°C
VGS = –10V, VDS = –4.5A
VDS = –10V, ID = –4.5A
ID(on)
On-State Drain Current
A
gFS
Forward Transconductance
18
S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
750
155
130
1000
210
pF
pF
pF
VDS = –10V, VGS = 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
195
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
6
20
48
47
8
12
31
77
72
12
ns
ns
VDD = –5V, ID = –4.5A
VGS = –4.5V, RGEN = 6Ω
Turn-Off Delay Time
Fall Time
ns
ns
Qg(TOT)
Qgs
Qgd
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VGS = 0V to –4.5V
nC
nC
nC
V
DD = –5V
ID = –4.5A
2
2
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain-Source Diode Forward Current
–1.3
–1.2
36
A
V
VSD
trr
Source to Drain Diode Forward Voltage VGS = 0V, IS = –1.3A (Note 2)
–0.8
24
Reverse Recovery Time
IF = –4.5A, di/dt = 100A/µs
Reverse Recovery Charge
ns
nC
Qrr
13
20
Notes:
1:
R
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.R
is
θJA
θJC
guaranteed by design while R
is determined by user’s board design.
θCA
a. 78°C/W when mounted on
a 1 in pad of 2 oz copper on
FR-4 board.
b. 156°C/W when mounted on a
minimum pad of 2 oz copper.
2
2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
www.onsemi.com
2
Typical Characteristics TJ = 25°C unless otherwise noted
20
2.2
1.8
1.4
1.0
0.6
VGS = -2.5V
VGS = -2.0V
VGS = -2.5V
VGS = -3.0V
15
10
5
VGS = -3.5V
VGS = -4.5V
VGS = -3.0V
VGS = -3.5V
VGS = -2.0V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = -4.5V
VGS = -1.5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
0
0
1
2
3
4
0
5
10
15
20
-V , DRAIN TO SOURCE VOLTAGE (V)
-ID, DRAIN CURRENT(A)
DS
Figure 1. On-Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs Drain Current and Gate Voltage
1.6
200
ID =-4.5A
GS = -4.5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
V
1.4
1.2
1.0
0.8
0.6
160
120
80
T
= 125oC
J
40
T
J
= 25oC
4.0
I
D
= -2.2A
2.0
0
1.5
-50 -25
0
25
50
75
100 125 150
2.5
3.0
3.5
4.5
TJ, JUNCTION TEMPERATURE (oC)
-VGS, GATE TO SOURCE VOLTAGE (V)
F i gu re 3 . N orma li zed On - Res is ta nc e
vs Junction Temperature
Figure4. On-Resistance vs Gate to
Source Voltage
10
1
20
V
GS
= 0V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
V
DD
= -5V
15
10
5
T = 150oC
J
0.1
T
J
= 25oC
0.01
0.001
0.0001
T = 150oC
J
T = 25oC
J
T
= -55oC
0.8
T = -55oC
J
J
0
1.0
0.0
0.2
0.4
0.6
1.0
1.2
1.5
2.0
2.5
3.0
-V , BODY DIODE FORWARD VOLTAGE (V)
SD
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
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3
Typical Characteristics TJ = 25°C unless otherwise noted
5
2000
1000
I
D
= -4.5A
V
DD
= -5V
C
iss
4
3
2
1
0
V
= -10V
DD
V
= -15V
DD
C
oss
f = 1MHz
= 0V
C
rss
V
GS
100
70
0.1
0
2
4
6
8
10
12
1
10
20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE(nC)
g
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
1
100
10
V
GS
= 0V
rDS(on) LIMIT
10us
0.1
0.01
1E-3
1E-4
1E-5
100us
T = 150oC
J
1ms
1
10ms
100ms
T
J
= 25oC
0.1
1s
SINGLE PULSE
T
= MAX RATED
= 25OC
J
DC
T
A
0.01
0
5
10
15
20
0.1
1
10
50
-V , GATE TO SOURCE VOLTAGE(V)
GS
-V , DRAIN to SOURCE VOLTAGE (V)
DS
Figure 9. Gate Leakage Current vs Gate to
Source Voltage
Figure10. Forward Bias Safe
Operating Area
50
DUTY CYCLE-DESCENDING ORDER
SINGLE PULSE
1
0.1
R
= 156oC/W
θJA
D = 0.5
0.2
40
30
20
10
0
T =25oC
A
0.1
0.05
0.02
0.01
P
DM
SINGLE PULSE
t
1
0.01
0.001
SINGLE PULSE
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T = P
x Z
x R
+ T
J
DM
θJA
θJA A
10-4
10-3
10-2
10-1
100
101
102
10-3
10-2
10-1
100
101
102
t, RECTANGULAR PULSE DURATION (s)
t, PULSE WIDTH (s)
Figure 11. Single Pulse Maximum Power Dissipation
Figure 12. Transient Thermal Response Curve
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4
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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