FDC30N20DZ [ONSEMI]
双 N 沟道 PowerTrench® MOSFET,30V,4.6A,31mΩ;型号: | FDC30N20DZ |
厂家: | ONSEMI |
描述: | 双 N 沟道 PowerTrench® MOSFET,30V,4.6A,31mΩ |
文件: | 总7页 (文件大小:411K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – Dual, N-Channel,
POWERTRENCH)
V
r
MAX
I MAX
D
DS
DS(on)
30 V
31 mW @ 10 V
38 mW @ 4.5 V
4.6 A
30 V, 4.6 A, 31 mW
FDC30N20DZ
D2
S1
D1
General Description
This N−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process. This process has been optimized for
G2
S2
G1
r
, switching performance and ruggedness.
DS(on)
TSOT23 6−Lead
SUPERSOTt−6
CASE 419BL
Features
• Max r
= 31 mW at V = 10 V, I = 4.6 A
GS D
DS(on)
• Max r
= 38 mW at V = 4.5 V, I = 4.2 A
GS D
DS(on)
• High Performance Trench Technology for Extremely Low r
• Fast Switching Speed
DS(on)
MARKING DIAGRAM
• 100% UIL Tested
30N MG
G
• Typical CDM ESD Protection Level > 2.0 kV (Note 5)
• This Device is Pb−Free and is RoHS Compliant
1
30N = Specific Device Code
Applications
M
= Date Code
• Load Switch
• Synchronous Rectifier
G
= Pb−Free Package
(Note: Microdot may be in either location)
MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
PINOUT
Symbol
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (Note 1a)
Pulsed (Note 4)
Single Pulse Avalanche Energy (Note 3)
Ratings
Units
V
V
DS
V
GS
30
20
V
G1
D1
I
D
4.6
A
30
3
A
S2
S1
D2
E
AS
mJ
W
G2
P
D
Power
(Note 1a)
(Note 1b)
0.96
Dissipation
0.69
T , T
Operating and Storage Junction
Temperature Range
−55 to +150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
THERMAL CHARACTERISTICS
Symbol
Parameter
Ratings
Units
RqJA
Thermal Resistance, Junction to Ambient
(Note 1a)
130
°C/W
RqJA
Thermal Resistance, Junction to Ambient
(Note 1b)
180
°C/W
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
March, 2023 − Rev. 2
FDC30N20DZ/D
FDC30N20DZ
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= 250 mA, V = 0 V
30
−
−
−
V
DSS
D
GS
Breakdown Voltage Temperature
Coefficient
= 250 mA, referenced to 25°C
−
22
mV/°C
DBVDSS
DTJ
D
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= 24 V, V = 0 V
−
−
−
−
1
mA
mA
DSS
GSS
DS
GS
I
=
20 V, V = 0 V
10
GS
DS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
V
I
= V , I = 250 mA
1
1.7
–4
3
V
GS(th)
GS
DS
D
Gate to Source Threshold Voltage
Temperature Coefficient
= 250 mA, referenced to 25°C
−
−
mV/°C
DVGS(th)
DTJ
D
r
Static Drain to Source On Resistance
Forward Transconductance
V
GS
V
GS
V
GS
V
DS
= 10 V, I = 4.6 A
−
−
−
−
23
27
31
23
31
38
42
−
mW
DS(on)
D
= 4.5 V, I = 4.2 A
D
= 10 V, I = 4.6 A, T = 125°C
D
J
g
FS
= 5 V, I = 4.6 A
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= 15 V, V = 0 V, f = 1 MHz
−
−
356
110
18
535
165
30
pF
pF
pF
W
iss
GS
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
−
rss
R
0.1
3.5
7.0
g
SWITCHING CHARACTERISTICS
t
Turn–On Delay Time
Rise Time
V
V
= 15 V, I = 4.6 A,
−
−
−
−
−
−
−
−
6
12
10
21
10
7.9
3.8
−
ns
ns
d(on)
DD
GS
D
= 10 V, R
= 6 W
GEN
t
r
2
t
Turn–Off Delay Time
Fall Time
13
2
ns
d(off)
t
f
ns
Q
Total Gate Charge
V
GS
V
GS
V
DD
= 0 V to 10 V, V = 15 V, I = 4.6 A
5.6
2.7
0.9
0.8
nC
nC
nC
nC
g(TOT)
DD
D
= 0 V to 4.5 V, V = 15 V, I = 4.6 A
DD
D
Q
Q
Gate to Source Charge
= 15 V, I = 4.6 A
D
gs
Gate to Drain “Miller” Charge
−
gd
DRAIN−SOURCE DIODE CHARACTERISTICS
V
Source−Drain Diode Forward Voltage
Reverse Recovery Time
V
= 0 V, I = 4.6 A (Note 2)
−
−
−
0.85
10
2
1.2
20
10
V
SD
GS
S
t
I = 4.6 A, di/dt = 100 A/ms
F
ns
nC
rr
Q
Reverse Recovery Charge
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. R
is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder
q
JA
mounting surface of the drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
q
q
JC
CA
a. 130°C/W when mounted on
b. 180°C/W when mounted on a
minimum pad of 2 oz. copper
2
a 1 in pad of 2 oz. copper
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0 %.
3. E of 3 mJ starting T = 25°C; N−ch: L = 0.1 mH, I = 8 A, V = 27 V, V = 10 V.
AS
J
AS
DD
GS
4. Pulse Id measured at td ≤ 250 ms, refer to SOA graph for more details.
5. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
www.onsemi.com
2
FDC30N20DZ
TYPICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
J
6.0
30
25
20
15
V
GS = 10
V
VGS = 3 V
VGS = 3.5 V
V
V
GS = 4.5
4.5
VGS = 4 V
VGS = 3.5 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
3.0
V
VGS = 4
VGS = 3 V
10
1.5
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
5
0
VGS = 10 V
VGS = 4.5 V
0.0
0
0.5
1.0
1.5
2.0
2.5
3.0
0
6
12
18
24
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance
vs Drain Current and Gate Voltage
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
150
100
50
ID = 4.6 A
VGS = 10 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
ID = 4.6 A
TJ = 125 o
C
TJ = 25 o
C
0
−75 −50 −25
0
25 50 75 100 125 150
2
3
4
5
6
7
8
9
10
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On−Resistance
Figure 4. On−Resistance vs Gate to
vs Junction Temperature
Source Voltage
30
24
18
12
6
30
10
VGS = 0 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
VDS = 5 V
1
0.1
TJ = 150 o
C
TJ = 150 o
C
TJ = 25 oC
TJ = 25 o
C
0.01
TJ = −55oC
TJ = −55oC
0
0.001
1
2
3
4
5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
www.onsemi.com
3
FDC30N20DZ
TYPICAL CHARACTERISTICS (continued)
(T = 25°C unless otherwise noted)
J
1000
100
10
8
ID = 4.6 A
Ciss
Coss
6
VDD = 10 V
VDD = 15 V
4
Crss
10
1
VDD = 20 V
2
f = 1 MHz
GS = 0 V
V
0
0
2
4
6
0.1
1
10
30
Q , GATE CHARGE (nC)
g
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain
to Source Voltage
10−1
10−2
10−3
10−4
10−5
10−6
10−7
10−8
10−9
100
10
1
VDS = 0 V
THIS AREA IS
LIMITED BY r DS(on)
10 ms
100 ms
TJ = 125 oC
1 ms
10 ms
100 ms
1 s
10 s
DC
SINGLE PULSE
T
0.1
J = MAX RATED
TJ = 25 o
C
qJA = 180o
R
C/W
CURVE BENT TO
MEASURED DATA
= 25 o
TA
C
0.01
0.01
0.1
1
10
100
0
5
10
15
20
25
30
35
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
DS
, DRAIN to SOURCE VOLTAGE (V)
Figure 9. Gate Leakage Current vs.
Gate to Source Voltage
Figure 10. Forward Bias Safe
Operating Area
10000
1000
100
10
SINGLE PULSE
qJA = 180 oC/W
R
TA = 25 o
C
1
0.1
10−5
10−4
10−3
10−2
10−1
t, PULSE WIDTH (s)
1
10
100
1000
Figure 11. Single Pulse Maximum Power Dissipation
www.onsemi.com
4
FDC30N20DZ
TYPICAL CHARACTERISTICS (continued)
(T = 25°C unless otherwise noted)
J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
0.01
0.1
0.05
0.02
0.01
P
DM
t
1
t
2
0.001
0.0001
NOTES:
DUTY FACTOR: D = t /t
SINGLE PULSE
1
2
PEAK T = P x Z
x R
+ T
qJA A
J
DM
qJA
10−5
10−4
10−3
10−2
t, RECTANGULAR PULSE DURATION (s)
10−1
1
10
100
1000
Figure 12. Junction to Ambient Transient Thermal Response Curve
ORDERING INFORMATION
Device
†
Device Marking
Package Type
Shipping
FDC30N20DZ
30N
TSOT−23−6
(Pb−free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
SUPERSOT is a trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other
countries.
www.onsemi.com
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TSOT23 6−Lead
CASE 419BL
ISSUE A
1
DATE 31 AUG 2020
SCALE 2:1
GENERIC
MARKING DIAGRAM*
XXX MG
G
1
XXX = Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON83292G
TSOT23 6−Lead
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号:
FDC3512D84Z
Small Signal Field-Effect Transistor, 3A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6
FAIRCHILD
FDC3512D87Z
Small Signal Field-Effect Transistor, 3A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6
FAIRCHILD
FDC3512L99Z
Small Signal Field-Effect Transistor, 3A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6
FAIRCHILD
FDC3512_NL
Small Signal Field-Effect Transistor, 3A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明