FDC3512 [ONSEMI]
N 沟道,PowerTrench® MOSFET,80V,3.0A,77mΩ;型号: | FDC3512 |
厂家: | ONSEMI |
描述: | N 沟道,PowerTrench® MOSFET,80V,3.0A,77mΩ 开关 光电二极管 晶体管 |
文件: | 总7页 (文件大小:270K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – N-Channel,
POWERTRENCH)
V
R
MAX
I MAX
D
DSS
DS(ON)
80 V
77 mW @ 10 V
88 mW @ 6 V
3.0 A
80 V
FDC3512
S
D
D
General Description
G
D
This N−Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM controllers. It has been
D
TSOT23 6−Lead
(SUPERSOTt−6)
CASE 419BL
optimized for low gate charge, low R
and fast switching speed.
DS(ON)
Features
• 3.0 A, 80 V
MARKING DIAGRAM
♦ R
♦ R
= 77 mW @ V = 10 V
GS
DS(ON)
= 88 mW @ V = 6 V
DS(ON)
GS
352 M
• High Performance Trench Technology for Extremely Low R
• Low Gate Charge (13 nC Typical)
DS(ON)
1
• High Power and Current Handling Capability
• Fast Switching Speed
352 = Device Code
M
= Date Code
• This Device is Pb−Free, Halide Free and is RoHS Compliant
Applications
PIN CONNECTION
• DC/DC Converter
1
2
3
6
5
4
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Drain−Source Voltage
Gate−Source Voltage
Ratings
80
Unit
V
V
DSS
GSS
V
20
V
I
D
Drain Current
A
Continuous (Note 1a)
Pulsed
3.0
20
P
D
Maximum
Power
Dissipation
W
(Note 1a)
1.6
ORDERING INFORMATION
(Note 1b)
0.8
See detailed ordering and shipping information on page 5 of
this data sheet.
T , T
Operating and Storage Junction
Temperature Range
−55 to +150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
Ratings
Unit
RqJA
Thermal Resistance,
Junction−to−Ambient (Note 1a)
78
°C/W
RqJC
Thermal Resistance,
Junction−to−Case (Note 1)
30
°C/W
1. R
is the sum of the junction−to−case and case−to−ambient resistance
q
JA
where the case thermal reference is defined as the solder mounting surface
of the drain pins. R is guaranteed by design while R is determined by
q
q
CA
JC
the user’s board design.
a. 78°C/W when mounted on a 1 in pad of 2 oz copper on FR−4 board.
b. 156°C/W when mounted on a minimum pad.
2
© Semiconductor Components Industries, LLC, 2002
1
Publication Order Number:
July, 2022 − Rev. 3
FDC3512/D
FDC3512
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
DRAIN−SOURCE DIODE AVALANCHE RATINGS (Note 2)
W
Drain–Source Avalanche Energy
Drain–Source Avalanche Current
Single Pulse, V = 40 V, I = 3.0 A
−
−
−
−
90
mJ
A
DSS
DD
D
I
3.0
AR
OFF CHARACTERISTICS
BV
Drain–Source Breakdown Voltage
V
I
= 0 V, I = 250 mA
80
−
−
−
−
V
DSS
GS
D
Breakdown Voltage Temperature
Coefficient
= 250 mA, Referenced to 25°C
80
mV/°C
DBVDSS
DTJ
D
I
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
V
DS
V
GS
V
GS
= 64 V, V = 0 V
−
−
−
−
−
−
1
mA
nA
nA
DSS
GS
I
= 20 V, V = 0 V
100
–100
GSSF
GSSR
DS
I
= –20 V, V = 0 V
DS
ON CHARACTERISTICS (Note 2)
V
Gate Threshold Voltage
V
I
= V , I = 250 mA
2
−
2.4
–6
4
−
V
GS(th)
DS
GS
D
Gate Threshold Voltage Temperature
Coefficient
= 250 mA, Referenced to 25_C
mV/°C
DVGS(th)
DTJ
D
R
Static Drain–Source On Resistance
V
V
V
= 10 V, I = 3.0 A
−
−
−
56
61
97
77
88
mW
DS(on)
GS
GS
GS
D
= 6.0 V, I = 2.8 A
D
= 10 V, I = 3.0 A, T = 125_C
141
D
J
I
On–State Drain Current
V
GS
V
DS
= 10 V, V = 5 V
10
−
−
−
−
A
S
D(on)
DS
g
FS
Forward Transconductance
= 10 V, I = 3.0 A
14
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= 40 V, V = 0 V, f = 1.0 MHz
−
−
−
634
58
−
−
−
pF
pF
pF
iss
GS
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
28
SWITCHING CHARACTERISTICS (Note 2)
t
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
R
= 40 V, I = 1 A, V = 10 V,
−
−
−
−
−
−
−
7
3
14
6
ns
ns
d(on)
DD
D
GS
= 6 W
GEN
t
r
t
24
4
28
8
ns
d(off)
t
f
ns
Q
g
V
DS
= 40 V, I = 3.0 A, V = 10 V
13
2.4
2.8
18
−
nC
nC
nC
D
GS
Q
gs
gd
Q
−
DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATING
Maximum Continuous Drain–Source Diode Forward Current
I
S
−
−
−
−
−
1.3
1.2
−
A
V
V
Drain–Source Diode Forward Voltage
Diode Reverse Recovery Time
V
= 0 V, I = 1.3 A (Note 2)
0.8
28.2
48
SD
GS
S
t
I = 3.0 A, d /d = 300 A/ms (Note 2)
F
nS
nC
rr
iF
t
Q
rr
Diode Reverse Recovery Charge
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
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2
FDC3512
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
20
15
10
5
1.8
V
= 10 V
GS
6.0 V
1.6
1.4
1.2
1
5.0 V
V
GS
= 4.0 V
4.5 V
4.0 V
4.5 V
5.0 V
6.0 V
10 V
0
0.8
0
1
2
3
4
5
0
5
10
15
20
V
DS
, DRAIN−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 1. On−Region Characteristics
Figure 2. On−Resistance Variation with
Drain Current and Gate Voltage
2.5
2.2
1.9
1.6
1.3
1
0.18
I
V
= 3.0 A
= 10 V
I = 1.5 A
D
D
GS
0.14
0.1
T = 125°C
A
T = 25°C
A
0.06
0.02
0.7
0.4
−50 −25
0
25 50 75 100 125 150 175
2
4
6
8
10
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On−Resistance Variation with
Temperature
Figure 4. On−Resistance Variation with
Gate−to−Source Voltage
100
10
20
V
DS
= 5 V
V
GS
= 0 V
15
10
5
1
T = 125°C
A
25°C
0.1
T = 125°C
A
0.01
0.001
0.0001
−55°C
25°C
−55°C
0
2
3
4
5
0
0.2
0.4
0.6
0.8
1
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage
Variation with Source Current and Temperature
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3
FDC3512
TYPICAL CHARACTERISTICS (continued)
10
8
1000
I
D
= 3.0 A
f = 1 MHz
= 0 V
V
= 20 V
DS
V
GS
40 V
800
600
400
200
0
CISS
60 V
6
4
CRSS
COSS
2
0
0
3
6
9
12
15
0
20
40
60
80
Q , GATE CHARGE (nC)
g
−V , DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
50
100
10
SINGLE PULSE
= 156°C/W
T = 25°C
A
R
100 ms
1 ms
10 ms
100 ms
1 s
10 s
q
JA
40
30
20
10
0
R
LIMIT
DS(ON)
1
DC
V
= 10 V
GS
0.1
SINGLE PULSE
R
T = 25°C
= 156°C/W
q
JA
A
0.01
0.1
1
10
100
0.001 0.01
0.1
1
10
100
1000
V
DS
, DRAIN−SOURCE VOLTAGE (V)
t , TIME (s)
1
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum Power
Dissipation
1
D = 0.5
0.2
0.1
R
(t) = r(t) + R
q
JA
q
JA
R
= 156°C/W
q
JA
0.01
0.05
0.02
0.01
SINGLE PULSE
P(pk)
t1
0.01
t2
T − T = P x R (t)
q
JA
J
A
Duty Cycle, D = t / t
1
2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t , TIME (s)
1
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
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4
FDC3512
PACKAGE MARKING AND ORDERING INFORMATION
†
Device
FDC3512
Device Marking
Package Type
Reel Size
Tape Width
Shipping
352
TSOT23 6−Lead
(Pb−Free)
7”
8 mm
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other
countries.
SUPERSOT is trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other
countries.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TSOT23 6−Lead
CASE 419BL
ISSUE A
1
DATE 31 AUG 2020
SCALE 2:1
GENERIC
MARKING DIAGRAM*
XXX MG
G
1
XXX = Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON83292G
TSOT23 6−Lead
PAGE 1 OF 1
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