FDB9403-F085 [ONSEMI]
N 沟道，Power Trench® MOSFET，40V，110A，1.2mΩ;
| 型号： | FDB9403-F085 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，Power Trench® MOSFET，40V，110A，1.2mΩ |
| 文件： | 总7页 (文件大小：424K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Is Now
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www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDB9403-F085
®
N-Channel Power Trench MOSFET
D
D
40V, 110A, 1.2mΩ
Features
Typ r
= 1mΩ at V = 10V, I = 80A
GS D
DS(on)
G
Typ Q
= 164nC at V = 10V, I = 80A
GS D
g(tot)
G
S
UIS Capability
TO-263AB
FDB SERIES
S
RoHS Compliant
Qualified to AEC Q101
Applications
Automotive Engine Control
Powertrain Management
Solenoid and Motor Drivers
Electronic Steering
Integrated Starter/alternator
Distributed Power Architectures and VRM
Primary Switch for 12V Systems
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain to Source Voltage
Gate to Source Voltage
40
±20
V
V
VGS
Drain Current - Continuous (VGS=10) (Note 1)
Pulsed Drain Current
TC = 25°C
TC = 25°C
110
ID
A
See Figure4
968
EAS
PD
Single Pulse Avalanche Energy
(Note 2)
(Note 3)
mJ
W
W/oC
oC
oC/W
oC/W
Power Dissipation
Derate above 25oC
333
2.22
TJ, TSTG Operating and Storage Temperature
-55 to + 175
0.45
RθJC
RθJA
Thermal Resistance Junction to Case
Maximum Thermal Resistance Junction to Ambient
43
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
330mm
Tape Width
Quantity
FDB9403
FDB9403-F085
TO-263AB
24mm
800 units
Notes:
1. Current is limited by bondwire configuration. Please see ON Semiconductor AN 9757-1 for details on test method.
2: Starting T = 25°C, L = 0.47mH, I = 64A, V = 40V during inductor charging and V = 0V during time in avalanche.
J
AS
DD
DD
3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder
mounting surface of the drain pins. RθJC is guaranteed by design while RθJAis determined by the user's board design. The maximum rating
2
presented here is based on mounting on a 1 in pad of 2oz copper.
©2012 Semiconductor Components Industries, LLC.
September-2017, Rev. 3
Publication Order Number:
FDB9403-F085/D
1
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
IDSS
Drain to Source Breakdown Voltage
Drain to Source Leakage Current
Gate to Source Leakage Current
ID = 250μA, VGS = 0V
40
-
-
-
-
-
-
1
V
μA
mA
nA
V
DS= 4 0 V ,
T J = 25oC
VGS = 0V
TJ = 175oC(Note 4)
-
1
IGSS
VGS = ±20V
-
±100
On Characteristics
VGS(th)
rDS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
VGS = VDS, ID = 250
2.0
3.13
1.0
4.0
1.2
V
uA
TJ = 25oC
-
-
mΩ
mΩ
ID = 80A,
GS= 10V
TJ = 175oC(Note 4)
1.63
1.96
V
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
-
-
-
-
-
12700
3195
493
2.9
-
pF
pF
pF
Ω
V
DS = 25V, VGS = 0V,
Coss
Crss
Rg
Output Capacitance
-
f = 1MHz
Reverse Transfer Capacitance
Gate Resistance
-
-
f = 1MHz
Qg(ToT)
Qg(th)
Qgs
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller“ Charge
VGS = 0 to 10V
164
23
213
30
-
nC
nC
nC
nC
VDD = 20V
ID = 80A
= 0 to 2V
VGS
59
Qgd
25
-
Switching Characteristics
ton
td(on)
tr
Turn-On Time
Turn-On Delay Time
Rise Time
-
-
-
-
-
-
-
16
19.5
61
46
-
56
ns
ns
ns
ns
ns
ns
-
-
V
DD = 20V, ID = 80A,
VGS = 10V, RGS = 1.5Ω
td(off)
tf
Turn-Off Delay Time
Fall Time
-
-
toff
Turn-Off Time
171
Drain-Source Diode Characteristics
= 35A, VGS = 0V
= 15A, VGS = 0V
-
-
-
-
-
-
0.85
0.80
125
194
V
ISD
ISD
VSD
Source to Drain Diode Voltage
V
Trr
Reverse Recovery Time
96
149
ns
nC
IF = 80A, dISD/dt = 100A/μs
Qrr
Reverse Recovery Charge
Notes:
4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production.
www.onsemi.com
2
Typical Characteristics
1.2
1.0
0.8
0.6
0.4
0.2
0.0
500
400
300
200
100
0
CURRENT LIMITED
BY PACKAGE
V
= 10V
GS
CURRENT LIMITED
BY SILICON
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
200
TC, CASE TEMPERATURE(oC)
TC, CASE TEMPERATURE(oC)
NOTE: Refer to ON Semiconductor Application Notes AN9757
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
Figure 1. Normalized Power Dissipation vs Case
Temperature
DUTY CYCLE - DESCENDING ORDER
1
D = 0.50
0.20
0.10
0.05
P
DM
0.02
0.01
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
SINGLE PULSE
1
2
PEAK T = P
x Z
x R
+ T
J
DM
θJA
θJA C
0.01
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 3. Normalized Maximum Transient Thermal Impedance
1000
100
10
VGS = 10V
TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
175 - TC
I = I2
150
SINGLE PULSE
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 4. Peak Current Capability
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3
Typical Characteristics
1000
100
10
10000
If R = 0
= (L)(I )/(1.3*RATED BV
t
AV
- V
)
AS
DSS
DD
If R
AV
≠ 0
t
= (L/R)ln[(I *R)/(1.3*RATED BV
- V ) +1]
DD
1000
100
AS
DSS
100us
o
STARTING T = 25 C
J
10
OPERATION INTHIS
AREAMAY BE
o
STARTING T = 150 C
1ms
10ms
DC
J
LIMITED BY r
DS(on)
SINGLE PULSE
1
T
= MAX RATED
J
o
T
C
= 25 C
1
0.1
1E-3 0.01 0.1
1
10
100 1000 10000
1
10
VDS , DRAIN TO SOURCE VOLTAGE (V)
100
t
, TIME IN AVALANCHE (ms)
AV
NOTE: Refer to ON Semiconductor Application Notes AN7514
and AN7515
Figure 5. Forward Bias Safe Operating Area
Figure 6. Unclamped Inductive Switching
Capability
200
200
PULSE DURATION = 80μs
V
= 0 V
GS
DUTY CYCLE = 0.5% MAX
100
10
1
V
= 5V
DD
150
100
50
0
o
T = 175
C
J
o
T
= 25 C
J
o
TJ = 175 C
o
o
TJ = 25 C
TJ = -55 C
2
3
4
5
6
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS , GATE TO SOURCE VOLTAGE (V)
V
, BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 7. Transfer Characteristics
Figure 8. Forward Diode Characteristics
250
200
150
100
50
250
200
V
GS
15V Top
10V
6V
5.5V
V
GS
15V Top
10V
6V
5.5V
150
100
50
5
V Bottom
5V
5V Bottom
5V
80μs PULSE WIDTH
80μs PULSE WIDTH
o
o
Tj=25 C
Tj=175 C
0
0.0
0
0.0
0.2
0.4
0.6
0.8
1.0
0.2
0.4
0.6
0.8
1.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Saturation Characteristics
Figure 10. Saturation Characteristics
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4
Typical Characteristics
1.8
1.6
1.4
1.2
1.0
0.8
0.6
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
10
I
D
= 80A
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
8
6
4
2
0
I
= 80A
o
D
T = 175 C
J
V
= 10V
GS
o
T = 25 C
J
-80
-40
0
40
80
120
160
200
o
TJ, JUNCTION TEMPERATURE( C)
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 11. Rdson vs Gate Voltage
Figure 12. Normalized Rdson vs Junction
Temperature
1.2
1.0
0.8
0.6
0.4
1.2
V
= V
= 250μA
I = 1mA
D
GS
DS
I
D
1.1
1.0
0.9
0.8
-80
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
160
200
TJ, JUNCTION TEMPERATURE (oC)
TJ, JUNCTION TEMPERATURE(oC)
Figure 13. Normalized Gate Threshold Voltage vs
Temperature
Figure 14. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
100000
10
ID = 80A
VDD = 16V
C
iss
8
VDD = 20V
VDD = 24V
10000
6
C
oss
4
2
0
1000
100
f = 1MHz
= 0V
C
rss
V
GS
0.1
1
10
100
0
50
100
150
200
Qg, GATE CHARGE(nC)
VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 15. Capacitance vs Drain to Source
Voltage
Figure 16. Gate Charge vs Gate to Source
Voltage
www.onsemi.com
5
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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❖
相关型号：
FDB9403_F085
Power Field-Effect Transistor, 110A I(D), 40V, 0.0012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT PACKAGE-3/2 PIN
FAIRCHILD
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