F59318969D [ONSEMI]
Power Management Circuit;
| 型号： | F59318969D |
| 厂家： | 
ONSEMI |
| 描述： | Power Management Circuit |
| 文件： | 总12页 (文件大小：577K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Auto-SPM) Electric Power
Steering Power Module
F59318969D
Features
www.onsemi.com
• Full Three Phase Inverter
• Current Sensing and Temperature Sensing
• Ultra Low Total Module Resistance
• This is a Pb−Free Device
Applications
• Electric Power Steering Power Systems
• Electro−Hydraulic Power Steering Systems
19LD, APM19−DA, TRW EHPS
CASE MODBW
Benefits
• Reduced Vehicle Fuel Consumption and CO Emission
2
MARKING DIAGRAM
• Free Programmable Assit Characteristics
• End of Line Calibration
• Simplified Vehicle Assembly
• Simplified Supply Chain Logistics
$Y
F59318969D
&H&E&E&E&E&3
PIN DESCRIPTION
Pin No.
Pin Name
PHASE3 SENSE
MOSFET G3
MOSFET G6
PHASE2 SENSE
MOSFET G2
MOSFET G5
PHASE1 SENSE
MOSFET G1
MOSFET G4
V+5
Pin Descriptions
Source of Q3 & Drain of Q6
Gate of Q3 MOSFET
1
2
F59318969D
= Specific Device Code
= ON Semiconductor Logo
= Lot Number
= Designates Space
= 3−Digit Date Code Format
$Y
&H
&E
&3
3
Gate of Q6 MOSFET
4
Source of Q2 & Drain of Q5
Gate of Q2 MOSFET
5
PIN CONFIGURATION
6
Gate of Q5 MOSFET
7
Source of Q1 & Drain of Q4
Gate of Q1 MOSFET
8
9
Gate of Q4 MOSFET
10
11
12
NTC Thermistor Terminal
Drain of Q1, Q2 and Q3
Source of Q4,Q5 & Q6 / Shunt+
VLINK−SENSE
I−BRIDGE−P
13
14
15
FET TEMP SENSE
I−BRIDGE−N
V0
NTC Thermistor Terminal
Negative Shunt terminal(Shunt−)
Negative Battery terminal
16
VLINK
Positive Battery terminal
Motor Phase #1 terminal
Motor Phase #2 terminal
17
18
19
Phase1
Phase2
Phase3
Motor Phase #3 terminal
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of
this data sheet.
© Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
February, 2020 − Rev. 2
F59318969D/D
F59318969D
INTERNAL EQUIVALENT CIRCUIT
VLINK
VLINK_SENSE
Q1
Q2
Q3
MOSFETG1
MOSFETG2
MOSFETG3
PHASE1
PHASE2
PHASE3
PHASE1_SENSE
PHASE2_SENSE
PHASE3_SENSE
Q4
Q5
Q6
MOSFETG4
MOSFETG5
MOSFETG6
R2
R1
C1
R1
C1
R1
C1
C2
I_BRIDGE_P1
FET_TEMP_SENS
E
CSR
V0
I_BRIDGE_N1
V5
NTC−Th
Figure 1.
COMPONENTS FOR THE F59318969D
COMPONENT
Size
Thickness
Maker
1
2
MOSFET
PCF33478
Typ.1.2 m~
Wafer
Bare Chip
Passive
Qty:6
Qty:1
5,080 x
200 mm
FCS
Max. 1.45 m~
3,686 mm
Tape & Reel
Current
Sense
Resistor
BVB−Z−R0005−1.0
0.5 m~ (1%)
10,000 x
6,600 mm
3,000 mm
800 mm
Isabellen
huette
4.7 K~(5%)
3
4
NTC
Thermistor
NCP18XM472J0SRB
Passive
Passive
Qty:1
Qty:1
1,600 x
800 mm
Murata
Vishay
MMA0204
3.3~(1%)
Resistor 1 MMA02040C3308FB300
3,600 x
1.400 mm
50 ppm/°C
MMA0204
750 m~(5%)
5
Resistor 2 MMA02040C7507JB300
Passive
Qty:3
3,600 x
1,400 mm
Vishay
50 ppm/°C
6
7
Capacitor 1 C0603C103K5RACAUTO
Capacitor 2 C0805Y103K1RACAUTO
Passive
Passive
Qty:1
Qty:3
Tot 16
1,600 x
800 mm
780 mm
KEMET
KEMET
10 nF(10%)
50 V
800 mm
2,000 x
1,250 mm
10 nF (10%)
100 V
Bare Chip: 6, Passive Components:10
www.onsemi.com
2
F59318969D
DBC Substrate
Alumina thickness is 0.5 mm, Copper thickness is 0.4 mm
on both sides. DBC substrate is NOT Nickel plated.
PBB and PBDE are flame retardants used in some plastics.
The maximum concentrations are 0.1% or 1000 ppm
(except for Cadmium, which is limited to 0.01% or 100 ppm)
by weight of homogeneous material.
The power module does not contain any substance
prohibited by the RoHS directive.
Leadframe
Leadframe is Oxygen Free Copper C102, 0.8 mm thick
H/2.
GADSL (Global Automotive Declarable Substance List)
compliance:
Flammability Information
All materials present in the power module meet UL
flammability rating class 94 V−0 or higher.
• The power module does not contain any substance
prohibited by the GADSL directive with either epoxy
mold compound.
• The following substances present in the KTMC5400SL
are classified as “Declarable” (This does not mean that
the substance is prohibited from being used in vehicles
parts nor is to be de−selected from use. It simply means
that has to be declared if it exceeds certain limits)
• Antimonytrioxide
• Phenol
• Epichlorohydrin
• Formaldehyde
Compliance to RoHS and GADSL Directives (May 10,
2007)
Prototypes were made with KTMC5400SL epoxy mold
compound.
RoHS is often referred to as the lead−free directive, but it
restricts the use of the following 6 substatances:
1. Lead
2. Mercury
3. Cadmium
4. Hexavalent chromium ( Chromium VI or Cr6+ )
5. Polybrominated biphenyls (PBB)
6. Polybrominated diphenyls ether (PBDE)
Solder
Solder used is a lead free SnAgCu alloy. The power
module is 100% lead free.
www.onsemi.com
3
F59318969D
ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless Otherwise Specified)
J
Symbol
(Q1~Q6)
Parameter
Dranin to Source Voltage
Gate to Source Voltage
Rating
40
Unit
V
V
DS
V
GS
(Q1~Q6)
20
V
I (Q1~Q6)
D
Dranin Current Continuous(T < 120°C, V = 10 V)
80
A
C
GS
E
P
T
(Q1~Q6)
Single Pulse Avalanche Energy
947
300
175
mJ
W
AS
D
Power dissipation
Maximum Junction Temperature
°C
J
TSTG
VISO
Storage Temperature
125
°C
Vrms
Isolation Voltage (60 Hz, Sinusoidal, AC 1minute,
Connection Pins to heat sink plate)
2500
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE
Symbol
Parameter
Q1 Thermal Resistance J −S
Min.
Typ.
1.21
1.18
1.32
Max.
1.55
1.62
1.80
Unit
°C/W
°C/W
°C/W
Rthjs
−
−
−
Thermal Resistance
Junction to sink,
Single Inverter FET,
PKG center (Note 1)
Q2 Thermal Resistance J −S
Q3 Thermal Resistance J −S
Q4 Thermal Resistance J −S
Q5 Thermal Resistance J −S
Q6 Thermal Resistance J −S
Maximum Junction Temperature
Operating Case Temperature
Storage Temperature
−
−
1.02
1.08
1.26
1.38
1.49
1.68
175
120
125
°C/W
°C/W
°C/W
°C
−
TJ
−
TC
−40
−40
°C
TSTG
°C
1. These values are based on Thermal simulations and PV level measurements.
These values assume a single MOSFET is on, therefore excluding cross conduction. Also the test condition is “Package Center” (compared
to “Chip Center”). This means that the DT is measured between the Tj of each MOSFET and the Heatsink temperature immediately under
the thermal media in the center of the package (compared to the heatsink temperature immediately under the thermal media in
correspondence of the center of the relative chip). These values assume a bondline lower than 40 mm and thermal conductivity of 1.8 Wm/K.
They can be achieved with a thermal media that provides good adhesion, low viscosity(< 60000 mPa/s) and high thermal conductivity (>
1.6 Wm/K). Fairchild recommends SE4486, a RTV thermal conductive adhesive by Dow Corning.
Figure 2.
www.onsemi.com
4
F59318969D
ELECTRICAL CHARACTERISTICS (T = 25°C, Unless Otherwise Specified)
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
BV
D−S Breakdown Voltage
(Inverter MOSFETs)
V
GS
V
GS
= 0, I = 250 uA
40
−
−
V
DSS
TH
D
V
Threshold Voltage
(Inverter MOSFETs)
= V , I = 250 uA, T = 25°C
2.0
2.8
4.0
V
DS
D
J
V
MOSFET Body Diode Forward Voltage
V
V
= 0 V, I = 80 A, T = 25°C
0.8
1.28
1.68
V
SD
GS
S
J
R
R
R
R
R
R
= 10 V, I = 80 A, T = 25°C
−
−
−
−
−
−
−
−
−
1.10
mW
Inverter High Side MOSFETs Q1
(See Note 2)
DS(ON)Q1
DS(ON)Q2
DS(ON)Q3
DS(ON)Q4
DS(ON)Q5
DS(ON)Q6
GS
D
J
V
GS
V
GS
V
GS
V
GS
V
GS
V
GS
V
GS
V
GS
= 10 V, I = 80 A, T = 25°C
1.15
1.20
1.8
1.9
2.0
−
1.75
1.82
2.31
2.51
2.58
1
mW
mW
mW
mW
mW
mA
Inverter High Side MOSFETs Q2
(See Note 2)
D
J
Inverter High Side MOSFETs Q3
(See Note 2)
= 10 V, I = 80 A, T = 25°C
D
J
Inverter Low Side MOSFETs Q4
(See Note 2)
= 10 V, I = 80 A, T = 25°C
D
J
Inverter Low Side MOSFETs Q5
(See Note 2)
= 10 V, I = 80 A, T = 25°C
D
J
Inverter Low Side MOSFETs Q6
(See Note 2)
= 10 V, I = 80 A, T = 25°C
D
J
I
= 0 V, V = 32 V, T = 25°C
Inverter MOSFETs
(UH, UL, VH, VL, WH, WL)
DSS
DS
J
I
=
20 V
−
100
nA
Inverter MOSFETs
Gate to Source Leakaage Current
GSS
Total loop resistance VLINK(+) → Phase → V0(−)
= 10 V, I = 80 A, T = 25°C
mW
5.0
6.2
D
J
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Low side MOSFETs do not have source sense wirebonds, I_Bridge_P is used for source sensing, thus resulting in higher Rdson values.
TEMPERATURE SENSE (NTC THERMISTOR)
Symbol
Test Conditions
Test Time
Min
Typ
Max
Units
Voltage
Current = 1 mA,
Temperature = 25°C
T = 0.5 ms
4.1
−
7.1
V
CURRENT SENSE RESISTOR
Symbol
Test Conditions
Test Time
T = 0.5 ms
Min
Typ
Max
0.53
Units
Current Senset resistor current = 80 A
(Note 3)
0.47
−
mW
Resistance
3. Limits are according the accurancy required by customer.
MECHANICAL CHARACTERISTICS AND RATINGS
Limits
Typ.
15
Min.
10
1.0
0
Max.
Item
Condition
Unit
Kg/cm
N/m
Mounting Torque
Mounting Torque
DBC Flatness
Mounting Screw: TBD (Note 4, 5)
Mounting Screw: TBD (Note 4, 5)
Recommended 15 Kg/cm
Recommended 1.5 N/m
Note Figure 4
20
2.0
200
−
1.5
50
mm
Weight
−
46
g
www.onsemi.com
5
F59318969D
(+)
(+)
(+)
Datum Line
NOTES:
4. Do not make over torque or mouting screws. Much mounting torque may cause ceramic cracks and bolts and Al heat−fin destruction.
5. Avoid one side tightening stress. Figure 4 shows the recommended torque order for mounting screws. Uneven mounting can cause the
SPM ceramic substrate to be damaged.
Figure 3. Flatness Measurement Position of The DBC Substrate
2
1
Figure 4. Mounting Screws Torque Order
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Package
Packing Type
Quantity
F59318969D
F59318969D
APM19−DA
Tube
7
www.onsemi.com
6
F59318969D
DETAILED PACKAGE OUTLINE DRAWINGS
APM19−DA
Figure 5.
www.onsemi.com
7
F59318969D
RESISTANCE MEASUREMENTS METHODS
1. Module Level
Gate points
Force points
Sense points
Figure 6.
Current Sense Res.
+ Force
− Force
+ Sense
− Sense
VLINK ( + )
PHASE1
I_BRIDGE_P
I_BRIDGE_N
MODULE PATHS MEASUREMENTS:
+ Force
VLINK(+)
VLINK(+)
VLINK(+)
− Force
PHASE1
PHASE2
PHASE3
+ Sense
VLINK(+)
VLINK(+)
VLINK(+)
− Sense
+ Force
− Force
V0(−)
+ Sense
− Sense
V0(−)
Q1 Path
Q2 Path
Q3 Path
PHASE1
PHASE2
PHASE3
Q4 Path
Q5 Path
Q6 Path
PHASE1
PHASE2
PHASE3
PHASE1
PHASE2
PHASE3
V0(−)
V0(−)
V0(−)
V0(−)
www.onsemi.com
8
F59318969D
2. Module Level
−sense Q1 & +sense Q4
−sense Q2 & +sense Q5
+sense Q1 & Q2 & Q3
−sense Q4 & Q5 & Q6
-sense Q3 & +sense Q6
Gate points
Force points
Sense points
Figure 7.
+ Force
− Force
+ Sense
− Sense
+ Force
− Force
V0(−)
+ Sense
− Sense
Q1
Q2
Q3
VLINK(+)
PHASE1
Vlink−sense Phase1Sense Q4
PHASE1
Phase1Sense I_BRIDGE_P
Phase2Sense I_BRIDGE_P
Phase3Sense I_BRIDGE_P
Q5
Q6
VLINK(+)
VLINK(+)
PHASE2
PHASE3
Vlink−sense Phase2Sense
Vlink−sense Phase3Sense
PHASE2
PHASE3
V0(−)
V0(−)
www.onsemi.com
9
F59318969D
HANDLING RECOMMENDATIONS
• For both ESD and cleanliness purposes the control pads
• Referenced to the EIA/JESD22−A114 and
AEC−Q101−001, the Power Module provides ESD
performance of 2 kV against the Human Body
Model(HBM, 100 pF, 1500 W)
must not be touched
• The Power Module is an ESD (Electro Static
Discharge) sensitive device and needs to be handled in
accordance with JEDEC Standard 625
SPM is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
www.onsemi.com
10
F59318969D
PACKAGE DIMENSIONS
19LD, APM19−DA, TRW EHPS
CASE MODBW
ISSUE O
DATE 31 OCT 2016
www.onsemi.com
11
F59318969D
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
ON Semiconductor Website: www.onsemi.com
◊
www.onsemi.com
相关型号：
©2020 ICPDF网 联系我们和版权申明