ESD9X7.0ST5G [ONSEMI]
Transient Voltage Suppressors; 瞬态电压抑制器型号: | ESD9X7.0ST5G |
厂家: | ONSEMI |
描述: | Transient Voltage Suppressors |
文件: | 总5页 (文件大小:118K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
ESD9X3.3ST5G Series,
SZESD9X3.3ST5G Series
Transient Voltage
Suppressors
Micro−Packaged Diodes for ESD Protection
http://onsemi.com
The ESD9X Series is designed to protect voltage sensitive
components from ESD. Excellent clamping capability, low leakage,
and fast response time provide best in class protection on designs that
are exposed to ESD. Because of its small size, it is suited for use in
cellular phones, MP3 players, digital cameras and many other portable
applications where board space is at a premium.
1
2
PIN 1. CATHODE
2. ANODE
Specification Features:
• Low Clamping Voltage
MARKING
DIAGRAM
• Small Body Outline Dimensions:
0.039″ x 0.024″ (1.0 mm x 0.60 mm)
• Low Body Height: 0.017″ (0.43 mm) Max
• Stand−off Voltage: 3.3 V − 12 V
X M
SOD−923
CASE 514AA
• Low Leakage
• Response Time is Typically < 1 ns
• ESD Rating of Class 3 (> 16 kV) per Human Body Model
• IEC61000−4−2 Level 4 ESD Protection
• SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
X
M
= Specific Device Code
= Date Code
ORDERING INFORMATION
†
Device
ESD9XxxST5G
Package
Shipping
SOD−923 8000/Tape & Reel
(Pb−Free)
• These are Pb−Free Devices
Mechanical Characteristics:
SZESD9XxxST5G SOD−923 8000/Tape & Reel
(Pb−Free)
CASE: Void-free, transfer-molded, thermosetting plastic
Epoxy Meets UL 94 V−0
LEAD FINISH: 100% Matte Sn (Tin)
MOUNTING POSITION: Any
QUALIFIED MAX REFLOW TEMPERATURE: 260°C
Device Meets MSL 1 Requirements
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MAXIMUM RATINGS
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the table on page 2 of this data sheet.
Rating
IEC 61000−4−2 (ESD)
Symbol
Value
Unit
Contact
Air
30
30
kV
ESD Voltage
Per Human Body Model
Per Machine Model
16
400
kV
V
Total Power Dissipation on FR−5 Board
⎪
D
(Note 1) @ T = 25°C
P
150
mW
A
Junction and Storage Temperature Range
T , T
−55 to
+150
°C
J
stg
Lead Solder Temperature − Maximum
T
L
260
°C
(10 Second Duration)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.62 in.
See Application Note AND8308/D for further description of survivability specs.
© Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
October, 2012 − Rev. 7
ESD9X3.3ST5G/D
ESD9X3.3ST5G Series, SZESD9X3.3ST5G Series
ELECTRICAL CHARACTERISTICS
A
I
(T = 25°C unless otherwise noted)
I
F
Symbol
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
I
PP
V
C
PP
V
RWM
Working Peak Reverse Voltage
V
C
V
V
I
Maximum Reverse Leakage Current @ V
BR RWM
R
RWM
V
I
V
F
R
T
V
BR
Breakdown Voltage @ I
Test Current
T
I
I
T
I
F
Forward Current
V
F
Forward Voltage @ I
F
P
Peak Power Dissipation
Max. Capacitance @V = 0 and f = 1 MHz
pk
I
PP
C
R
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
Uni−Directional TVS
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, V = 1.1 V Max. @ I = 10 mA for all types)
A
F
F
V
(V)
V (V)
C
BR
V
RWM
I
R
(mA)
Max I (A)
P (W)
pk
C
@ I
@ Max I
PP
T
PP
(V)
@ V
(Note 3)
(8 x 20 ms) (pF)
(Note 2)
(Note 3)
I
T
V
C
RWM
Per IEC61000−4−2
Device
Marking
(Note 4)
Max
3.3
5.0
7.0
12
Max
Min
5.0
mA
1.0
1.0
1.0
1.0
Max
10.4
12.3
25
Typ
102
107
100
140
Typ
80
Device*
ESD9X3.3ST5G
ESD9X5.0ST5G
ESD9X7.0ST5G
ESD9X12ST5G
A
B
2.5
1.0
0.1
1.0
9.8
8.7
4.0
5.9
6.2
65
Figures 1 and 2
(Note 5)
5**
C
7.5
65
13.5
23.7
30
* Include SZ-prefix devices where applicable.
**Rotated 270 degrees.
2. V is measured with a pulse test current I at an ambient temperature of 25°C.
BR
T
3. Surge current waveform per Figure 5.
4. For test procedure see Figures 3 and 4 and Application Note AND8307/D.
5. ESD9X5.0ST5G shown below. Other voltages available upon request.
Figure 2. ESD Clamping Voltage Screenshot
Figure 1. ESD Clamping Voltage Screenshot
Negative 8 kV contact per IEC 61000−4−2
Positive 8 kV contact per IEC 61000−4−2
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2
ESD9X3.3ST5G Series, SZESD9X3.3ST5G Series
IEC61000−4−2 Waveform
IEC 61000−4−2 Spec.
I
peak
Test
Voltage
(kV)
First Peak
Current
(A)
100%
90%
Current at
30 ns (A)
Current at
60 ns (A)
Level
1
2
3
4
2
4
6
8
7.5
15
4
8
2
4
6
8
I @ 30 ns
22.5
30
12
16
I @ 60 ns
10%
t
P
= 0.7 ns to 1 ns
Figure 3. IEC61000−4−2 Spec
Oscilloscope
ESD Gun
TVS
50 W
Cable
50 W
Figure 4. Diagram of ESD Test Setup
The following is taken from Application Note
AND8308/D − Interpretation of Datasheet Parameters
for ESD Devices.
systems such as cell phones or laptop computers it is not
clearly defined in the spec how to specify a clamping voltage
at the device level. ON Semiconductor has developed a way
to examine the entire voltage waveform across the ESD
protection diode over the time domain of an ESD pulse in the
form of an oscilloscope screenshot, which can be found on
the datasheets for all ESD protection diodes. For more
information on how ON Semiconductor creates these
screenshots and how to interpret them please refer to
AND8307/D.
ESD Voltage Clamping
For sensitive circuit elements it is important to limit the
voltage that an IC will be exposed to during an ESD event
to as low a voltage as possible. The ESD clamping voltage
is the voltage drop across the ESD protection diode during
an ESD event per the IEC61000−4−2 waveform. Since the
IEC61000−4−2 was written as a pass/fail spec for larger
100
t
r
PEAK VALUE I
@ 8 ms
RSM
90
80
70
60
50
40
30
20
PULSE WIDTH (t ) IS DEFINED
P
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
HALF VALUE I /2 @ 20 ms
RSM
t
P
10
0
0
20
40
t, TIME (ms)
60
80
Figure 5. 8 X 20 ms Pulse Waveform
http://onsemi.com
3
ESD9X3.3ST5G Series, SZESD9X3.3ST5G Series
TYPICAL CHARACTERISTICS
7.4
7.3
7.2
7.1
7.0
6.9
6.8
6.7
6.6
6.5
6.4
6.3
20
18
16
14
12
10
8
6
4
2
0
−55
+25
+150
−55
+25
+150
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 6. Typical Breakdown Voltage
versus Temperature
Figure 7. Typical Leakage Current
versus Temperature
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4
ESD9X3.3ST5G Series, SZESD9X3.3ST5G Series
PACKAGE DIMENSIONS
SOD−923
CASE 514AA
ISSUE E
−X−
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
−Y−
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE
MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
E
1
2
2X b
0.08 X Y
TOP VIEW
MILLIMETERS
DIM MIN NOM MAX
INCHES
NOM MAX
MIN
A
b
c
0.34
0.15
0.07
0.75
0.55
0.95
0.39
0.20
0.12
0.80
0.60
1.00
0.19 REF
0.10
0.43
0.25
0.17
0.85
0.65
1.05
0.013 0.015 0.017
0.006 0.008 0.010
0.003 0.005 0.007
0.030 0.031 0.033
0.022 0.024 0.026
0.037 0.039 0.041
0.007 REF
A
D
E
H
E
L
c
H
E
L2 0.05
0.15
0.002 0.004 0.006
SIDE VIEW
SOLDERING FOOTPRINT*
2X
L
1.20
2X
2X
0.25
0.36
2X
L2
PACKAGE
OUTLINE
BOTTOM VIEW
DIMENSIONS: MILLIMETERS
See Application Note AND8455/D for more mounting details
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
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ESD9X3.3ST5G/D
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