EMH2604-TL-H [ONSEMI]
Pch+Nch Power MOSFET, 20V, 4A, 45mΩ, -20V, -3A, 85mΩ, Complementary Dual EMH8;
| 型号： | EMH2604-TL-H |
| 厂家： | 
ONSEMI |
| 描述： | Pch+Nch Power MOSFET, 20V, 4A, 45mΩ, -20V, -3A, 85mΩ, Complementary Dual EMH8 |
| 文件： | 总9页 (文件大小：657K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : EN9006A
EMH2604
Power MOSFET
http://onsemi.com
–
–
Ω
Ω
20V, 4A, 45m , 20V, 3A, 85m , Complementary Dual EMH8
Features
•
Nch + Pch MOSFET
•
ON-resistance Nch : R (on)1=34m (typ.)
Ω
DS
Pch : R (on)1=65m (typ.)
Ω
DS
•
•
1.8V drive
Halogen free compliance
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
N-channel
P-channel
--20
Unit
V
V
20
±10
4
DSS
V
±10
V
GSS
I
--3
A
D
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
I
PW 10 s, duty cycle 1%
When mounted on ceramic substrate (900mm2 0.8mm) 1unit
When mounted on ceramic substrate (900mm2 0.8mm)
20
--20
A
≤
μ
≤
DP
P
P
1.0
1.2
W
W
°C
°C
×
D
T
×
Channel Temperature
Storage Temperature
Tch
150
--55 to +150
Tstg
This product is designed to “ESD immunity < 200V ”, so please take care when handling.
*
Machine Model
*
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Product & Package Information
Package Dimensions
unit : mm (typ)
• Package
: EMH8
7045-002
• JEITA, JEDEC
: -
• Minimum Packing Quantity : 3,000 pcs./reel
EMH2604-TL-H
0.2
0.125
Packing Type : TL
Marking
8
5
FD
TL
LOT No.
1
4
0.5
2.0
Electrical Connection
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
8
7
6
5
EMH8
1
2
3
4
Semiconductor Components Industries, LLC, 2013
July, 2013
62712 TKIM/60111PE TKIM TC-00002607 No.9006-1/9
EMH2604
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
V
min
max
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=1mA, V =0V
20
(BR)DSS
D
GS
I
V
=20V, V =0V
1
A
A
μ
DSS
DS GS
I
V
=±8V, V =0V
±10
1.3
μ
GSS
GS DS
V
(off)
|
V
=10V, I =1mA
0.4
V
GS
yfs
DS D
Forward Transfer Admittance
V
I
=10V, I =2A
D
3.4
S
|
DS
R
R
R
(on)1
(on)2
(on)3
=4A, V =4.5V
GS
34
49
45
67
m
Ω
Ω
Ω
DS
DS
DS
D
Static Drain-to-Source On-State Resistance
I
D
=1A, V =2.5V
GS
m
m
I
D
=0.5A, V =1.8V
GS
74
115
Input Capacitance
Ciss
345
67
pF
Output Capacitance
Coss
Crss
V
=10V, f=1MHz
pF
pF
ns
DS
Reverse Transfer Capacitance
Turn-ON Delay Time
52
t
t
t
t
(on)
9.2
60
d
r
Rise Time
ns
See specified Test Circuit.
Turn-OFF Delay Time
Fall Time
(off)
30
ns
d
f
38
ns
Total Gate Charge
Qg
4.7
0.65
1.6
0.8
nC
nC
nC
V
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[P-channel]
Qgs
Qgd
V
=10V, V =4.5V, I =4A
GS
DS
D
V
SD
I =4A, V =0V
S GS
1.2
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=--1mA, V =0V
--20
V
(BR)DSS
D GS
I
V
=--20V, V =0V
--1
±10
A
A
μ
DSS
DS
GS
I
V
=±8V, V =0V
GS DS
μ
GSS
V
(off)
|
V
=--10V, I =--1mA
DS D
--0.4
--1.3
V
GS
yfs
Forward Transfer Admittance
V
I
=--10V, I =--1.5A
D
3.6
65
S
|
DS
R
R
R
(on)1
(on)2
(on)3
=--3A, V =--4.5V
GS
85
137
235
m
Ω
Ω
Ω
DS
DS
DS
D
Static Drain-to-Source On-State Resistance
I
D
=--1A, V =--2.5V
GS
98
m
m
I
D
=--0.5A, V =--1.8V
GS
155
320
66
Input Capacitance
Ciss
pF
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
V
=--10V, f=1MHz
pF
pF
ns
DS
50
t
t
t
t
(on)
7.1
21
d
r
ns
See specified Test Circuit.
Turn-OFF Delay Time
Fall Time
(off)
37
ns
d
f
32
ns
Total Gate Charge
Qg
4.0
0.6
1.1
--0.83
nC
nC
nC
V
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Qgs
Qgd
V
=--10V, V =--4.5V, I =--3A
GS
DS
D
V
SD
I =--3A, V =0V
S GS
--1.2
No.9006-2/9
EMH2604
Switching Time Test Circuit
[N-channel]
[P-channel]
V =10V
DD
V = --10V
DD
V
IN
V
IN
4.5V
0V
0V
--4.5V
I
=2A
I = --1.5A
D
R =6.67Ω
L
D
V
IN
V
IN
R =5Ω
L
D
V
OUT
D
V
OUT
PW=10μs
D.C.≤1%
PW=10μs
D.C.≤1%
G
G
EMH2604
EMH2604
P. G
P. G
50Ω
50Ω
S
S
Ordering Information
Device
Package
EMH8
Shipping
memo
Pb Free and Halogen Free
EMH2604-TL-H
3,000pcs./reel
[Nch]
[Nch]
I
D
-- V
DS
I
-- V
D GS
4.0
3.5
3.0
2.5
2.0
1.5
1.0
5.0
V
=10V
DS
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
V
=1.2V
GS
0.5
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
0.5
1.0
1.5
2.0
Drain-to-Source Voltage, V
DS
-- V
Gate-to-Source Voltage, V
GS
-- V
IT13500
IT13499
R
(on) -- V
R
(on) -- Ta
[Nch]
[Nch]
DS
GS
DS
110
100
90
110
100
90
Ta=25°C
I
=0.5A
D
1A
4A
80
80
70
70
60
60
50
50
40
40
30
30
20
20
10
0
10
0
8
0
1
2
3
4
5
6
7
--60 --40 --20
0
20
40
60
80 100 120 140 160
Gate-to-Source Voltage, V
GS
-- V
Ambient Temperature, Ta -- °C
IT13501
IT13502
No.9006-3/9
EMH2604
[Nch]
[Nch]
=0V
| yfs | -- I
I
-- V
D
S SD
7
5
7
5
V
V
=10V
GS
DS
3
2
3
2
1.0
7
5
1.0
3
2
7
5
0.1
7
5
3
2
3
2
0.1
0.01
0.1
2
3
5
7
2
3
5
7
1.0
2
3
5
7
0.3
0.5
0.7
0.9
1.1
0.01
0.1
Drain Current, I -- A
IT13503
Diode Forward Voltage, V
SD
-- V
IT13504
D
SW Time -- I
[Nch]
Ciss, Coss, Crss -- V
[Nch]
D
DS
5
1000
V
V
=10V
=4.5V
f=1MHz
DD
GS
3
2
7
5
100
3
2
7
5
3
2
t
f
100
7
5
t (on)
d
10
7
5
3
2
3
2
0.01
2
3
5
7
2
3
5
7
2
3
5
7
10
0
2
4
6
8
10
12
14
16
18
20
0.1
1.0
Drain Current, I -- A
Drain-to-Source Voltage, V
-- V
IT13505
IT13506
[Nch]
D
DS
V
-- Qg
[Nch]
A S O
GS
100
7
5
4.5
V
=10V
DS
=4A
I
4.0
3.5
3.0
2.5
2.0
1.5
1.0
D
3
2
≤10μs)
I
=20A (PW
DP
10
7
5
I =4A
D
3
2
1.0
7
5
3
2
Operation in this
area is limited by R (on).
0.1
7
5
DS
Ta=25°C
3
2
0.5
0
Single pulse
When mounted on ceramic substrate (900mm2×0.8mm)
0.01
0.01
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5 7
100
0.1
1.0
10
Drain-to-Source Voltage, V
-- V
Total Gate Charge, Qg -- nC
IT13507
IT16454
DS
I
-- V
DS
[Pch]
I
-- V
[Pch]
D
D GS
--3.0
--2.5
--2.0
--1.5
--1.0
--5.0
V
= --10V
DS
--4.5
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--1.5V
= --1.2V
--0.5
0
--0.5
0
V
GS
0
--0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
0
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0 --2.2
Drain-to-Source Voltage, V
DS
-- V
IT14533
Gate-to-Source Voltage, V
GS
-- V
IT14534
No.9006-4/9
EMH2604
R
(on) -- V
GS
[Pch]
Ta=25°C
R
(on) -- Ta
DS
[Pch]
DS
240
210
180
150
120
90
240
220
200
180
160
140
120
100
80
I
= --0.5A
D
--1A
--3A
60
60
40
30
0
20
0
0
--1
--2
--3
--4
--5
--6
--7
--8
--60 --40 --20
0
20
40
60
80 100 120 140 160
Gate-to-Source Voltage, V
-- V
IT14535
Ambient Temperature, Ta -- °C
IT14536
GS
[Pch]
I
S
-- V
SD
[Pch]
| yfs | -- I
D
10
7
5
V
= --10V
V
=0V
DS
GS
7
5
3
2
3
2
--1.0
7
5
3
2
1.0
7
5
--0.1
7
5
3
2
3
2
0.1
--0.01
--0.01
2
3
5
7
2
3
5
7
--1.0
2
3
5
7
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
--0.9
--1.0
--1.1
--0.1
Drain Current, I -- A
D
IT14537
Diode Forward Voltage, V
SD
Ciss, Coss, Crss -- V
DS
-- V
IT14538
SW Time -- I
[Pch]
= --10V
= --4.5V
[Pch]
D
5
7
5
V
V
f=1MHz
DD
GS
3
2
3
2
100
7
5
3
2
100
7
5
10
t (on)
d
7
5
3
2
3
2
2
3
5
7
2
3
5
7
2
3
5
7
--10
0
--2
--4
--6
--8
--10 --12 --14 --16 --18 --20
--0.01
--0.1
--1.0
Drain Current, I -- A
IT14539
Drain-to-Source Voltage, V
-- V
IT14540
D
DS
V
-- Qg
[Pch]
A S O
[Pch]
GS
--4.5
--100
7
5
V
I
= --10V
DS
= --3A
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
D
3
2
I
= --20A (PW
DP
≤10μs)
--10
7
5
I = --3A
D
3
2
--1.0
7
5
3
2
Operation in this
area is limited by R (on).
--0.1
DS
7
5
Ta=25°C
Single pulse
3
2
--0.5
0
When mounted on ceramic substrate (900mm2×0.8mm)
--0.01
--0.01
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5 7
--100
IT16455
--0.1
--1.0
--10
Total Gate Charge, Qg -- nC
IT14541
Drain-to-Source Voltage, V -- V
DS
No.9006-5/9
EMH2604
P
-- Ta
[Nch/Pch]
D
1.4
1.2
1.0
0.8
0.6
0.4
When mounted on ceramic substrate
(900mm2×0.8mm)
0.2
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT16456
No.9006-6/9
EMH2604
Embossed Taping Specification
EMH2604-TL-H
No.9006-7/9
EMH2604
Outline Drawing
Land Pattern Example
EMH2604-TL-H
Mass (g) Unit
Unit: mm
0.008
mm
* For reference
0.3
0.5
No.9006-8/9
EMH2604
Note on usage : Since the EMH2604 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No.9006-9/9
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