EMH3 [JCST]
Transistor;
| 型号： | EMH3 |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：271K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
Digital transistors (built-in resistors)
EMH3
DIGITAL TRANSISTOR (NPN+NPN)
SOT-563
FEATURES
z
z
z
Two DTC143T chips in a UMT package
Transistor elements are independent, eliminating interference
Mounting cost and area can be cut in half.
1
External circuit
MARKING:H3
Absolute maximum ratings(Ta=25℃)
Parameter
Symbol
Limits
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC
50
50
5
V
V
V
100
mA
Collector Power dissipation
PC
150
mW
Junction temperature
Storage temperature
Tj
150
℃
℃
Tstg
-55~150
Electrical characteristics (Ta=25℃)
Parameter
Symbol
Min.
50
50
5
Typ
Max.
Unit
V
Conditions
Collector-base breakdown voltage
V(BR)CBO
Ic=50μA
Ic=1mA
Collector-emitter breakdown voltage V(BR)CEO
V
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
V(BR)EBO
ICBO
IEBO
VCE(sat)
hFE
V
IE=50μA
0.5
0.5
μA
μA
V
VCB=50V
VEB=4V
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
0.3
IC=5mA,IB=0.25mA
VCE=5V,IC=1mA
100
600
6.11
R1
3.29
4.7
KΩ
Transition frequency
fT
250
MHz
VCE=10V ,IE=-5mA,f=100MHz
A,Dec,2010
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