EFC6602R [ONSEMI]
N-Channel Power MOSFET 12V, 18A, 5.9mΩ, Dual EFCP; N沟道功率MOSFET 12V ， 18A ， 5.9mÎ © ，双EFCP
| 型号： | EFC6602R |
| 厂家： | 
ONSEMI |
| 描述： | N-Channel Power MOSFET 12V, 18A, 5.9mΩ, Dual EFCP |
| 文件： | 总8页 (文件大小：323K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA2152A
EFC6602R
N-Channel Power MOSFET
http://onsemi.com
Ω
12V, 18A, 5.9m , Dual EFCP
Features
•
•
•
•
•
2.5V drive
Common-drain type
2KV ESD HBM
Protection diode in
Halogen free compliance
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Source-to-Source Voltage
Gate-to-Source Voltage
Source Current (DC)
Source Current (Pulse)
Total Dissipation
Symbol
Conditions
Ratings
Unit
V
V
12
SSS
V
±12
V
GSS
I
S
18
A
I
PW 10 s, duty cycle 1%
60
2.0
A
≤
μ
≤
SP
P
When mounted on ceramic substrate (5000mm2 0.8mm)
W
°C
°C
×
T
Channel Temperature
Storage Temperature
Tch
150
Tstg
--55 to +150
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
Product & Package Information
• Package
: EFCP
7073-001
• JEITA, JEDEC
: -
• Minimum Packing Quantity : 5,000 pcs./reel
2.7
EFC6602R-TR
6
1
5
4
3
Taping Type : TR
Marking
MB
LOT No.
TR
2
Electrical Connection
4, 6
0.65
1 : Source1
2 : Gate1
3 : Source1
4 : Source2
5 : Gate2
Rg
5
6 : Source2
0.3
EFCP2718-6CE-020
Rg
2
Rg=200Ω
1, 3
Semiconductor Components Industries, LLC, 2013
July, 2013
13013 TKIM TC-00002866/N2112 TKIM TC-00002838/HD 121009 PF No. A2152-1/8
EFC6602R
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Source-to-Source Breakdown Voltage
Zero-Gate Voltage Source Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I =1mA, V =0V
GS
Test Circuit 1
Test Circuit 1
Test Circuit 2
Test Circuit 3
Test Circuit 4
Test Circuit 5
Test Circuit 5
Test Circuit 5
Test Circuit 5
Test Circuit 5
12
V
μA
μA
V
(BR)SSS
S
I
I
V =10V, V =0V
SS GS
1
SSS
V
V
V
=±8V, V =0V
SS
±1
GSS
GS
V
(off)
GS
=6V, I =1mA
0.5
1.3
SS
S
Forward Transfer Admittance
| yfs |
=6V, I =3A
13
S
SS
S
R
R
R
R
R
(on)1
I =3A, V =4.5V
S GS
3.1
3.3
3.5
4.0
5.2
4.5
4.8
5.9
6.3
6.5
8.2
11
m
m
m
m
m
Ω
Ω
Ω
Ω
Ω
SS
SS
SS
SS
SS
(on)2
(on)3
(on)4
(on)5
I =3A, V =4.0V
S GS
Static Source-to-Source On-State Resistance
I =3A, V =3.8V
S GS
5
I =3A, V =3.1V
S GS
5.8
I =3A, V =2.5V
S GS
7.5
Turn-ON Delay Time
Rise Time
t
t
t
t
(on)
530
2100
6200
5500
55
ns
d
r
ns
ns
ns
nC
V
V
=6V, V =4.5V, I =3A
Test Circuit 7
DD GS
S
Turn-OFF Delay Time
Fall Time
(off)
d
f
Total Gate Charge
Forward Source-to-Source Voltage
Qg
V
=6V, V =4.5V, I =18A Test Circuit 8
DD GS
S
V
I =3A, V =0V
S GS
Test Circuit 6
0.76
1.2
F(S-S)
Ordering Information
Device
Package
EFCP
Shipping
5,000pcs./reel
memo
EFC6602R-TR
Pb Free and Halogen Free
No. A2152-2/8
EFC6602R
Test circuits are example of measuring FET1 side
Test Circuit 2
Test Circuit 1
I
I
GSS
SSS
S2
S2
G2
G2
G1
A
G1
V
SS
A
V
GS
S1
S1
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
Test Circuit 3
Test Circuit 4
| yfs |
V
GS
(off)
S2
S2
G2
G1
G2
A
A
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
V
V
G1
SS
SS
V
V
GS
GS
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
S1
S1
Test Circuit 6
Test Circuit 5
V
F(S-S)
R
(on)
SS
S2
S2
4.5V
IF
IS
G2
G1
G2
V
V
G1
VGS=0V
V
GS
When FET1 is
measured,+4.5V is added to
VGS of FET2.
S1
S1
Test Circuit 8
Qg
Test Circuit 7
t (on), t , t (off), t
f
d
r d
S2
S2
RL
A
G2
G1
G2
G1
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
I
=1mA
G
V
RL
R
R
V
DD
S1
S1
50Ω
V
DD
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
PG
PG
No. A2152-3/8
EFC6602R
| yfs | -- I
I
S
-- V
GS
S
3
2
20
18
16
14
12
V
=6V
V
=6V
SS
SS
10
7
5
3
2
1.0
7
5
10
8
3
2
6
0.1
7
5
4
3
2
2
0
0.01
0.001
0
0.5
1.0
1.5
2.0
IT16986
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5 7
10
IT16987
0.01
0.1
1.0
Source Current, I -- A
Gate to Source Voltage, V
GS
-- V
S
I
S
-- V
S/W Time -- I
F(S-S)
S
10K
3
2
V
=0V
GS
7
5
10
7
5
3
2
3
2
1.0
7
5
1K
7
3
2
t (on)
d
5
0.1
7
5
3
2
3
2
V
V
=6V
=4.5V
SS
GS
2
0.01
100
0
0.4
0.6
0.8
1.0
1.2
IT16988
3
5
7
2
3
5
7
2
3
5
7
10
2
3
0.01
0.1
1.0
Forward Source to Source Voltage, V
-- V
Source Current, I -- A
S
IT16989
F(S-S)
Qg -- V
GS
R
(on) -- V
SS
GS
4.5
4.0
3.5
50
45
40
35
30
25
20
15
10
Ta=25°C
V
=6V
SS
I =18A
I =3A
S
S
3.0
2.5
2.0
1.5
1.0
0.5
0
5
0
0
10
20
30
40
50
60
IT16990
0
2
4
6
8
10
IT16991
Total Gate Charge, Qg -- nC
Gate to Source Voltage, V -- V
GS
R
(on) -- Ta
I
-- V
SS
D
SS
14
12
10
8
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
6
4
2
0
0.5
0
--60 --40 --20
0
20
40
60
80 100 120 140 160
IT16992
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Ambient Temperature, Ta -- °C
Source to Source Voltage, V
-- V
IT16993
DS
No. A2152-4/8
EFC6602R
A S O
P
-- Ta
T
100
7
5
2.5
2.0
1.5
1.0
0.5
0
When mounted on ceramic substrate
(5000mm2×0.8mm)
I
=60A(PW≤10μs)
SP
3
2
I =18A
S
10
7
5
3
2
Operation in this area
1.0
7
5
is limited by R (on).
DS
3
2
0.1
7
5
Ta=25°C
Single pulse
3
2
When mounted on ceramic substrate (5000mm2×0.8mm)
0.01
0.01
2
3
5
7
2
3
5
7
2
3
5
7
2
3
0
20
40
60
80
100
120
140
0.1
1.0
10
Source Voltage to Source Voltage, V
-- V IT16994
Ambient Temperature, Ta -- °C
IT16995
SS
No. A2152-5/8
EFC6602R
Taping Specification
EFC6602R-TR
No. A2152-6/8
EFC6602R
Outline Drawing
Land Pattern Example
EFC6602R-TR
Mass (g) Unit
Unit: mm
0.0024
mm
* For reference
No. A2152-7/8
EFC6602R
Note on usage : Since the EFC6602R is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A2152-8/8
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