EFC8811R_16 [ONSEMI]
Power MOSFET;
| 型号： | EFC8811R_16 |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET |
| 文件： | 总6页 (文件大小：527K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EFC8811R
Power MOSFET
for 1-Cell Lithium-ion Battery Protection
12V, 3.2mΩ, 27A, Dual N-Channel
www.onsemi.com
This Power MOSFET features a low on-state resistance. This device is
suitable for applications such as power switches of portable machines. Best
suited for 1-cell lithium-ion battery applications.
V
R
SS
(on) Max
I
SSS
S Max
3.2mΩ@ 4.5V
3.2mΩ@ 4.0V
3.2mΩ@ 3.8V
4.4mΩ@ 3.1V
6.3mΩ@ 2.5V
Features
2.5V drive
2kV ESD HBM
Common-Drain Type
ESD Diode-Protected Gate
Pb-Free, Halogen Free and RoHS compliance
12V
27A
ELECTRICAL CONNECTION
N-Channel
Applications
1-Cell Lithium-ion Battery Charging and Discharging Switch
4, 6
SPECIFICATIONS
Rg
ABSOLUTE MAXIMUM RATINGS at Ta = 25C (Note 1)
5
2
Parameter
Source to Source Voltage
Gate to Source Voltage
Symbol
Value
Unit
V
V
12
8
27
SSS
GSS
V
I
V
Rg
1 : Source1
2 : Gate1
Source Current (DC)
A
S
Source Current (Pulse)
PW100s, duty cycle1%
Total Dissipation
3 : Source1
4 : Source2
5 : Gate2
A
I
100
SP
P
Surface mounted on ceramic substrate
2.5
W
T
Rg=200Ω
6 : Source2
1, 3
(5000mm2 0.8mm)
Junction Temperature
Storage Temperature
Tj
150
C
C
Tstg
55 to +150
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
CSP6, 1.77x3.54 /
THERMAL RESISTANCE RATINGS
EFCP3517-6DGH-020
Parameter
Symbol
Value
Unit
Junction to Ambient
Surface mounted on ceramic substrate
C/W
R
JA
50
MARKING
(5000mm2 0.8mm)
ML
LOT No.
ORDERING INFORMATION
See detailed ordering and shipping
information on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
March 2016 - Rev. 0
1
Publication Order Number :
EFC8811R/D
EFC8811R
ELECTRICAL CHARACTERISTICS at Ta 25C (Note 2)
Value
typ
Parameter
Symbol
Conditions
Unit
min
12
max
Source to Source Breakdown Voltage
Zero-Gate Voltage Source Current
Gate to Source Leakage Current
Gate Threshold Voltage
V(
)
I =1mA, V =0V
Test Circuit 1
Test Circuit 1
Test Circuit 2
Test Circuit 3
Test Circuit 4
V
A
A
V
BR SSS
S
GS
=10V, V =0V
I
I
V
1
SSS
GSS
SS
GS
GS
V
V
V
=8V, V =0V
SS
1
V
(th)
=6V, I =1mA
0.5
1.3
GS
FS
SS
SS
S
Forward Transconductance
g
=6V, I =3A
19
2.3
S
S
R
(on)1
(on)2
I =5A, V =4.5V
GS
I =5A, V =4.0V
GS
Test Circuit 5
Test Circuit 5
1.8
1.9
2.0
2.1
2.7
3.2
3.2
3.2
4.4
6.3
m
m
m
m
m
ns
SS
SS
S
R
2.4
S
Static Source to Source On-State
Resistance
R
R
R
(on)3
(on)4
(on)5
I =5A, V =3.8V
GS
Test Circuit 5
Test Circuit 5
Test Circuit 5
2.6
SS
SS
SS
S
I =5A, V =3.1V
GS
3.3
S
I =5A, V =2.5V
GS
4.0
S
Turn-ON Delay Time
Rise Time
t (on)
d
80
t
570
38,000
17,700
100
0.75
ns
r
V
=6V, V =4.5V, I =3A Test Circuit 6
SS GS
S
t (off)
d
Turn-OFF Delay Time
Fall Time
ns
t
f
ns
Total Gate Charge
Forward Source to Source Voltage
Qg
V
=6V, V =4.5V, I =27A Test Circuit 7
GS
nC
V
SS
S
V
I =3A, V =0V
GS
Test Circuit 8
1.2
F(S-S)
S
Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
EFC8811R
Test circuits are example of measuring FET1 side
Test Circuit 2
Test Circuit 1
I
V
/ I
GSS
SSS SSS
S2
S2
G2
G1
G2
G1
A
V
SS
A
V
GS
S1
S1
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
Test Circuit 3
(th)
Test Circuit 4
g
V
FS
GS
S2
S2
G2
G1
G2
A
A
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
V
V
G1
SS
SS
V
V
GS
GS
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
S1
S1
Test Circuit 6
Test Circuit 5
(on)
t (on), t , t (off), t
f
d
r d
R
SS
S2
S2
RL
IS
G2
G1
G2
V
V
G1
V
SS
V
GS
S1
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
S1
PG
Test Circuit 8
Test Circuit 7
Qg
V
F(S-S)
S2
S2
I
A
S
G2
G1
G2
G1
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
V
I
G
=1mA
VGS=0V
RL
When FET1 is
measured,+4.5V is added to
S1
S1
V
SS
PG
V
GS of FET2.
When FET2 is measured, the position of FET1 and FET2 is switched.
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3
EFC8811R
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4
EFC8811R
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5
EFC8811R
PACKAGE DIMENSIONS
unit : mm
CSP6, 1.77x3.54 / EFCP3517-6DGH-020
CASE 568AL
ISSUE O
E
A
B
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
MILLIMETERS
DIM
A
b
b1
D
MIN
MAX
0.22
0.28
0.28
0.22
0.22
PIN A1
REFERENCE
1.77 BSC
2X
0.05
0.05
C
E
e
e2
L
3.54 BSC
0.50 BSC
1.00 BSC
2X
C
TOP VIEW
SIDE VIEW
1.22
1.28
A
C
0.03
0.03
C
C
RECOMMENDED
SOLDERING FOOTPRINT*
4X
1.25
2X
8X
R0.125
SEATING
PLANE
0.25
PACKAGE
OUTLINE
0.50
PITCH
e2
e2
e/2
1
2
3
2X
b
0.05
0.03
C
C
A B
e
1
2.00
PITCH
4X
b1
DIMENSIONS: MILLIMETERS
5
6
4
*For additional information on our Pb-
details, please download the ON Semiconductor Soldering and
MountingTechniques Reference Manual, SOLDERRM/D.
Free strategy and soldering
L
1 : Source1
2 : Gate1
BOTTOM VIEW
3 : Source1
4 : Source2
5 : Gate2
6 : Source2
ORDERING INFORMATION
Device
Marking
ML
Package
Shipping (Qty / Packing)
5,000 / Tape & Reel
CSP6, 1.77x3.54 /
EFCP3517-6DGH-020
(Pb-Free / Halogen Free)
EFC8811R-TF
† For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF
Note on usage : Since the EFC8811R is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects. Please contact sales for use except the designated application.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiariesin the United States
and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of
SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without
further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitabilityof its products for any particular purpose,
nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including
without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can
and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are
not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applicationsintended to support or
sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers,
employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was
negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all
applicable copyright laws and is not for resale in any manner.
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