CPH6442-TL-W [ONSEMI]
单 N 沟道，功率 MOSFET，60V，6A，43mΩ;
| 型号： | CPH6442-TL-W |
| 厂家： | 
ONSEMI |
| 描述： | 单 N 沟道，功率 MOSFET，60V，6A，43mΩ PC 脉冲 光电二极管 晶体管 |
| 文件： | 总5页 (文件大小：357K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CPH6442
Power MOSFET
www.onsemi.com
60V, 43mΩ, 6A, Single N-Channel
V
R
(on) Max
I
DSS
DS
D Max
6A
Features
• 4V Drive
• Low On-Resistance
• ESD Diode-Protected Gate
43 mΩ@10V
59 mΩ@4.5V
65 mΩ@4V
60V
• Pb-Free, and RoHS Compliance
• Halogen Free Compliance : CPH6442-TL-W
Electrical Connection
N-Channel
Specifications
Absolute Maximum Ratings at Ta = 25°C
1, 2, 5, 6
Parameter
Symbol
Value
Unit
V
Drain to Source Voltage
V
DSS
60
20
6
Gate to Source Voltage
Drain Current (DC)
V
GSS
V
1 : Drain
2 : Drain
3
I
A
D
3 : Gate
Drain Current (Pulse)
4 : Source
5 : Drain
6 : Drain
I
24
A
DP
PW≤10μs, duty cycle≤1%
4
Power Dissipation
When mounted on ceramic substrate
(900mm2
× 0.8mm)
P
D
1.6
W
°C
°C
Junction Temperature
Storage Temperature
Tj
150
Packing Type : TL
Marking
Tstg
−55 to +150
Thermal Resistance Ratings
Parameter
Symbol
Value
78.1
Unit
TL
Junction to Ambient
°C/W
R
When mounted on ceramic substrate
(900mm2
× 0.8mm)
θJA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
March 2015 - Rev. 3
1
Publication Order Number :
CPH6442/D
CPH6442
Electrical Characteristics at Ta = 25°C
Value
typ
Parameter
Symbol
Conditions
Unit
min
60
max
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Gate Threshold Voltage
V(
)
I
=1mA, V =0V
V
μA
μA
V
BR DSS
D
GS
I
I
V
V
V
V
=60V, V =0V
1
DSS
DS
GS
DS
DS
GS
= 16V, V =0V
DS
10
GSS
V
(th)
GS
=10V, I =1mA
1.2
2.6
2.6
D
Forward Transconductance
g
=10V, I =3A
4.4
S
FS
D
R
R
R
(on)1
(on)2
(on)3
I
I
I
=3A, V =10V
GS
33
42
43
59
65
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
DS
DS
DS
D
D
D
Static Drain to Source On-State Resistance
=1.5A, V =4.5V
GS
=1.5A, V =4V
GS
46
Input Capacitance
Ciss
1040
90
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
V
=20V, f=1MHz
DS
55
t (on)
d
12
t
18
r
See specified Test Circuit
Turn-OFF Delay Time
Fall Time
t (off)
d
80
t
35
f
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Forward Diode Voltage
Qg
20
Qgs
Qgd
V
=30V, V =10V, I =6A
DS GS
3.0
4.2
0.82
D
V
SD
I =6A, V =0V
GS
1.2
S
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
V =30V
DD
V
IN
10V
0V
I
=3A
D
V
IN
R =10Ω
L
D
V
OUT
PW=10μs
D.C.≤1%
G
CPH6442
P. G
50Ω
S
www.onsemi.com
2
CPH6442
www.onsemi.com
3
CPH6442
www.onsemi.com
4
CPH6442
Package Dimensions
CPH6442-TL-E / CPH6442-TL-W
CPH6
CASE 318BD
ISSUE O
Unit : mm
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
Recommended
Soldering Footprint
0.6
0.95
0.95
ORDERING INFORMATION
Device
Package
Shipping
3,000 pcs. / Tape & Reel
Note
CPH6442-TL-E
Pb-Free
CPH6, SC-74
SOT-26, SOT-457
CPH6442-TL-W
Pb-Free and Halogen Free
Note on usage : Since the CPH6442 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiariesin the United States
and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of
SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without
further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitabilityof its products for any particular purpose,
nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including
without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can
and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are
not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applicationsintended to support or
sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers,
employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was
negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all
applicable copyright laws and is not for resale in any manner.
www.onsemi.com
5
©2020 ICPDF网 联系我们和版权申明