CPH6443-TL-H [SANYO]

General-Purpose Switching Device Applications; 通用开关设备的应用
CPH6443-TL-H
型号: CPH6443-TL-H
厂家: SANYO SEMICON DEVICE    SANYO SEMICON DEVICE
描述:

General-Purpose Switching Device Applications
通用开关设备的应用

开关 通用开关
文件: 总7页 (文件大小:557K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Ordering number : ENA1826A  
SANYO Sem iconductors  
DATA S HEET  
N-Channel Silicon MOSFET  
General-Purpose Switching Device  
Applications  
CPH6443  
Features  
ON-resistance R (on)1=28m (typ.)  
Ω
DS  
4V drive  
Halogen free compliance  
Protection diode in  
Specications  
at Ta=25°C  
Absolute Maximum Ratings  
Parameter  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Drain Current (DC)  
Symbol  
Conditions  
Ratings  
Unit  
V
V
V
35  
±20  
6
DSS  
GSS  
V
I
I
A
D
Drain Current (Pulse)  
PW10μs, duty cycle 1%  
24  
A
DP  
Allowable Power Dissipation  
Channel Temperature  
Storage Temperature  
P
When mounted on ceramic substrate (1200mm2 0.8mm)  
1.6  
150  
W
°C  
°C  
×
D
Tch  
Tstg  
--55 to +150  
Package Dimensions  
unit : mm (typ)  
Product & Package Information  
• Package  
: CPH6  
7018A-003  
• JEITA, JEDEC  
: SC-74, SOT-26, SOT-457  
• Minimum Packing Quantity : 3,000 pcs./reel  
CPH6443-TL-H  
2.9  
5
0.15  
Packing Type: TL  
Marking  
6
4
3
0.05  
TL  
1
2
0.95  
1 : Drain  
2 : Drain  
3 : Gate  
0.4  
Electrical Connection  
4 : Source  
5 : Drain  
6 : Drain  
1, 2, 5, 6  
SANYO : CPH6  
3
4
http://semicon.sanyo.com/en/network  
61312 TKIM/O1310PE TKIM TC-00002507  
No. A1826-1/7  
CPH6443  
at Ta=25°C  
Electrical Characteristics  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
V
min  
max  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I
I
=1mA, V =0V  
35  
(BR)DSS  
D
GS  
V
V
V
V
I
=35V, V =0V  
GS  
1
A
A
μ
DSS  
GSS  
DS  
GS  
DS  
DS  
I
=±16V, V =0V  
DS  
±10  
2.6  
μ
V
(off)  
|
=10V, I =1mA  
D
1.2  
V
GS  
yfs  
Forward Transfer Admittance  
=10V, I =3A  
D
2.9  
28  
43  
52  
470  
70  
35  
8
S
|
R
R
R
(on)1  
(on)2  
(on)2  
=3A, V =10V  
GS  
37  
61  
73  
m
Ω
Ω
Ω
DS  
DS  
DS  
D
Static Drain-to-Source On-State Resistance  
I
I
=1.5A, V =4.5V  
GS  
m
m
D
D
=1.5A, V =4V  
GS  
Input Capacitance  
Ciss  
pF  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-ON Delay Time  
Rise Time  
Coss  
Crss  
V
=20V, f=1MHz  
pF  
pF  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
V
DS  
t (on)  
d
t
17  
32  
22  
10  
2
r
See specied Test Circuit.  
Turn-OFF Delay Time  
Fall Time  
t (off)  
d
t
f
Total Gate Charge  
Qg  
Gate-to-Source Charge  
Gate-to-Drain “Miller” Charge  
Diode Forward Voltage  
Qgs  
Qgd  
V
=20V, V =10V, I =6A  
GS  
DS  
D
2
V
I =6A, V =0V  
GS  
0.84  
1.2  
SD  
S
Switching Time Test Circuit  
V
V
=20V  
IN  
DD  
10V  
0V  
I
=3A  
D
V
IN  
R =6.7Ω  
L
D
V
OUT  
PW=10μs  
D.C.1%  
G
CPH6443  
P. G  
50Ω  
S
Ordering Information  
Device  
Package  
CPH6  
Shipping  
3,000pcs./reel  
memo  
CPH6443-TL-H  
Pb Free and Halogen Free  
No. A1826-2/7  
CPH6443  
I
-- V  
I
-- V  
GS  
D
DS  
D
6
5
4
3
2
6
5
4
3
2
V
=10V  
Ta=25°C  
DS  
1
0
1
0
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
0
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
Drain-to-Source Voltage, V  
-- V  
IT14971  
Gate-to-Source Voltage, V  
GS  
-- V  
IT14972  
DS  
R
(on) -- V  
R
(on) -- Ta  
DS  
DS  
GS  
100  
90  
80  
70  
60  
50  
40  
30  
20  
100  
90  
80  
70  
60  
50  
40  
30  
20  
Ta=25°C  
I
=1.5A  
D
3A  
10  
0
10  
0
0
2
4
6
8
10  
12  
14  
16  
--60 --40 --20  
0
20  
40  
60  
80 100 120 140 160  
Gate-to-Source Voltage, V  
-- V  
IT15933  
Ambient Temperature, Ta -- °C  
IT15934  
GS  
| yfs | -- I  
I
-- V  
SD  
D
S
10  
7
5
7
5
V
=10V  
V
=0V  
DS  
GS  
3
2
3
2
1.0  
7
5
1.0  
7
5
3
2
3
2
0.1  
7
5
3
2
0.1  
7
0.01  
5
7
5
3
2
3
2
0.01  
0.001  
0.001  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
IT14976  
2
3
5
7
0.01  
2
3
5 7  
2
3
5
7
2
3
5 7  
10  
0.1  
1.0  
Drain Current, I -- A  
Diode Forward Voltage, V -- V  
SD  
IT14975  
D
SW Time -- I  
Ciss, Coss, Crss -- V  
D
DS  
100  
1000  
V
V
=20V  
=10V  
f=1MHz  
DD  
GS  
7
7
5
5
3
2
3
2
100  
7
5
10  
t (on)  
d
7
5
3
2
3
2
10  
0
5
10  
15  
20  
25  
30  
35  
IT14978  
2
3
5
7
2
3
5
7
0.1  
1.0  
10  
Drain Current, I -- A  
Drain-to-Source Voltage, V  
DS  
-- V  
IT14977  
D
No. A1826-3/7  
CPH6443  
V
-- Qg  
A S O  
GS  
5
10  
9
I
=24A (PW10μs)  
V
=20V  
DP  
DS  
=6A  
3
2
I
D
10  
7
5
8
I =6A  
D
7
3
2
6
1.0  
7
5
5
Operation in this area  
is limited by R (on).  
DS  
4
3
2
3
0.1  
7
5
2
Ta=25°C  
3
2
1
0
Single pulse  
When mounted on ceramic substrate (1200mm2×0.8mm)  
0.01  
0.1  
0
1
2
3
4
5
6
7
8
9
10  
2
3
5
7
2
3
5
7
2
3
5
1.0  
10  
Total Gate Charge, Qg -- nC  
IT14979  
Drain-to-Source Voltage, V  
-- V  
IT15935  
DS  
P
-- Ta  
D
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
When mounted on ceramic substrate  
(1200mm2  
×
0.8mm)  
0.2  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
Ambient Temperature, Ta -- °C  
IT15936  
No. A1826-4/7  
CPH6443  
Embossed Taping Specication  
CPH6443-TL-H  
No. A1826-5/7  
CPH6443  
Outline Drawing  
Land Pattern Example  
CPH6443-TL-H  
Mass (g) Unit  
Unit: mm  
0.015  
mm  
* For reference  
0.6  
0.95  
0.95  
No. A1826-6/7  
CPH6443  
Note on usage : Since the CPH6443 is a MOSFET product, please avoid using this device in the vicinity  
of highly charged objects.  
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to  
"standard application", intended for the use as general electronics equipment. The products mentioned herein  
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,  
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal  
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten  
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they  
grant any guarantee thereof. If you should intend to use our products for new introduction or other application  
different from current conditions on the usage of automotive device, communication device, office equipment,  
industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.)  
prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be  
solely responsible for the use.  
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate  
the performance, characteristics, and functions of the described products in the independent state, and are  
not guarantees of the performance, characteristics, and functions of the described products as mounted in the  
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an  
independent device, the customer should always evaluate and test devices mounted in the customer's  
products or equipment.  
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using  
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating  
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor  
Co.,Ltd. products described or contained herein.  
Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,  
high current, high voltage, or drastic temperature change, even if it is used within the range of absolute  
maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a  
confirmation.  
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all  
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures  
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give  
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,  
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but  
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and  
structural design.  
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are  
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Any and all information described or contained herein are subject to change without notice due to  
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the  
SANYO Semiconductor Co.,Ltd. product that you intend to use.  
Upon using the technical information or products described herein, neither warranty nor license shall be  
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any  
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third  
party's intellectual property rights which has resulted from the use of the technical information and products  
mentioned above.  
This catalog provides information as of June, 2012. Specications and information herein are subject  
to change without notice.  
PS No. A1826-7/7  

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