BSS138LT1G [ONSEMI]
Power MOSFET 200 mA, 50 V; 功率MOSFET 200毫安， 50 V
| 型号： | BSS138LT1G |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET 200 mA, 50 V |
| 文件： | 总6页 (文件大小：83K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSS138LT1
Preferred Device
Power MOSFET
200 mA, 50 V
N−Channel SOT−23
Typical applications are DC−DC converters, power management in
portable and battery−powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
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Features
200 mA, 50 V
RDS(on) = 3.5 W
• Pb−Free Packages are Available
• Low Threshold Voltage (V
: 0.5 V−1.5 V) Makes it Ideal for
GS(th)
N−Channel
Low Voltage Applications
3
• Miniature SOT−23 Surface Mount Package Saves Board Space
1
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
2
Rating
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Drain Current
Symbol
Value
50
Unit
Vdc
Vdc
mA
V
DSS
V
GS
± 20
3
SOT−23
CASE 318
STYLE 21
− Continuous @ T = 25°C
I
200
800
A
D
1
− Pulsed Drain Current (t ≤ 10 ms)
I
p
DM
2
Total Power Dissipation @ T = 25°C
P
D
225
mW
A
Operating and Storage Temperature
Range
T , T
− 55 to
150
°C
J
stg
MARKING DIAGRAM & PIN ASSIGNMENT
3
Thermal Resistance − Junction−to−Ambient
R
556
260
°C/W
°C
q
JA
Drain
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
T
L
J1
M
= Device Code
= Date Code
J1M
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1
Gate
2
Source
ORDERING INFORMATION
†
Device
Package
Shipping
BSS138LT1
SOT−23
3000 Tape & Reel
3000 Tape & Reel
BSS138LT1G
SOT−23
(Pb−Free)
BSS138LT3
SOT−23 10,000 Tape & Reel
BSS138LT3G
SOT−23 10,000 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
June, 2004 − Rev. 3
BSS138LT1/D
BSS138LT1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
50
−
−
Vdc
(BR)DSS
(V = 0 Vdc, I = 250 mAdc)
GS
D
Zero Gate Voltage Drain Current
(V = 25 Vdc, V = 0 Vdc)
I
mAdc
DSS
−
−
−
−
0.1
0.5
DS
GS
(V = 50 Vdc, V = 0 Vdc)
DS
GS
Gate−Source Leakage Current (V = ± 20 Vdc, V = 0 Vdc)
I
−
−
±0.1
mAdc
GS
DS
GSS
ON CHARACTERISTICS (Note 1)
Gate−Source Threshold Voltage
V
GS(th)
0.5
−
1.5
Vdc
(V = V , I = 1.0 mAdc)
DS
GS
D
Static Drain−to−Source On−Resistance
(V = 2.75 Vdc, I < 200 mAdc, T = −40°C to +85°C)
r
Ohms
DS(on)
−
−
5.6
−
10
3.5
GS
D
A
(V = 5.0 Vdc, I = 200 mAdc)
GS
D
Forward Transconductance
(V = 25 Vdc, I = 200 mAdc, f = 1.0 kHz)
g
100
−
−
mmhos
pF
fs
DS
D
DYNAMIC CHARACTERISTICS
Input Capacitance
(V = 25 Vdc, V = 0, f = 1 MHz)
DS
C
−
−
−
40
12
50
25
GS
iss
Output Capacitance
(V = 25 Vdc, V = 0, f = 1 MHz)
DS
C
oss
GS
Transfer Capacitance
(V = 25 Vdc, V = 0, f = 1 MHz)
DG
C
rss
3.5
5.0
GS
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
t
−
−
−
−
20
20
ns
d(on)
(V = 30 Vdc, I = 0.2 Adc,)
DD
D
Turn−Off Delay Time
t
d(off)
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
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2
BSS138LT1
TYPICAL ELECTRICAL CHARACTERISTICS
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.9
V
= 3.5 V
V
DS
= 10 V
25°C
T = 25°C
GS
J
0.8
0.7
0.6
0.5
0.4
0.3
0.2
−55°C
V
= 3.25 V
= 3.0 V
GS
150°C
V
GS
V
= 2.75 V
GS
V
= 2.5 V
GS
0.1
0
0
1
2
3
4
5
6
7
8
9
10
0
0.5
V
1
1.5
2
2.5
3
3.5
4
4.5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
, GATE−TO−SOURCE VOLTAGE (VOLTS)
GS
Figure 2. Transfer Characteristics
Figure 1. On−Region Characteristics
2.2
2
1.25
I
D
= 1.0 mA
V
I
= 10 V
= 0.8 A
GS
1.8
1.6
1.4
1.2
1
1.125
1
D
V = 4.5 V
GS
= 0.5 A
I
D
0.875
0.8
0.6
−ꢀ55
0.75
−ꢀ55
−5
45
95
145
−30
−5
20
45
70
95
120
145
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 3. On−Resistance Variation with
Temperature
Figure 4. Threshold Voltage Variation
with Temperature
10
V
DS
= 40 V
T = 25°C
J
8
6
4
2
0
I
D
= 200 mA
0
500
1000
1500
2000
2500
3000
Q , TOTAL GATE CHARGE (pC)
T
Figure 5. Gate Charge
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3
BSS138LT1
TYPICAL ELECTRICAL CHARACTERISTICS
10
9
8
V
GS
= 2.5 V
V
GS
= 2.75 V
7
6
5
4
3
150°C
8
150°C
7
6
5
25°C
4
25°C
−55°C
3
2
1
−55°C
2
1
0
0.05
0.1
0.15
0.2
0.25
0
0.05
0.1
0.15
0.2
0.25
I , DRAIN CURRENT (AMPS)
D
I , DRAIN CURRENT (AMPS)
D
Figure 7. On−Resistance versus Drain Current
Figure 6. On−Resistance versus Drain Current
4.5
6
5.5
5
V
GS
= 4.5 V
V
GS
= 10 V
150°C
150°C
4
3.5
3
4.5
4
3.5
3
2.5
2
25°C
25°C
2.5
2
−55°C
−55°C
1.5
1
1.5
1
0
0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5
I , DRAIN CURRENT (AMPS)
0
0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5
I , DRAIN CURRENT (AMPS)
D
D
Figure 9. On−Resistance versus Drain Current
Figure 8. On−Resistance versus Drain Current
1
120
100
80
T = 150°C
J
25°C
−55°C
0.1
60
40
C
iss
0.01
C
oss
20
0
C
rss
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
0
5
10
15
20
25
V
SD
, DIODE FORWARD VOLTAGE (VOLTS)
Figure 10. Body Diode Forward Voltage
Figure 11. Capacitance
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4
BSS138LT1
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AH
NOTES:
ꢁꢂ1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
A
L
ꢁꢂ2. CONTROLLING DIMENSION: INCH.
ꢁꢂ3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
3
S
C
B
1
2
ꢁꢂ4. 318−03 AND −07 OBSOLETE, NEW STANDARD
318−08.
V
G
INCHES
DIM MIN MAX
MILLIMETERS
MIN
2.80
1.20
0.89
0.37
1.78
0.013
0.085
0.35
0.89
2.10
0.45
MAX
3.04
1.40
1.11
0.50
2.04
0.100
0.177
0.69
1.02
2.64
0.60
A
B
C
D
G
H
J
0.1102 0.1197
0.0472 0.0551
0.0350 0.0440
0.0150 0.0200
0.0701 0.0807
0.0005 0.0040
0.0034 0.0070
0.0140 0.0285
0.0350 0.0401
0.0830 0.1039
0.0177 0.0236
H
J
D
K
K
L
S
V
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
BSS138LT1
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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For additional information, please contact your
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BSS138LT1/D
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