BSS138N [INFINEON]
SIPMOS Small-Signal-Transistor; SIPMOS小信号三极管
| 型号： | BSS138N |
| 厂家： | 
Infineon |
| 描述： | SIPMOS Small-Signal-Transistor |
| 文件： | 总9页 (文件大小：231K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSS138N
SIPMOS® Small-Signal-Transistor
Features
Product Summary
V DS
60
V
Ω
A
• N-channel
R DS(on),max
I D
3.5
• Enhancement mode
0.23
• Logic level
• dv /dt rated
SOT-23
Type
Package
SOT-23
SOT-23
Ordering Code Tape and Reel Information
Marking
SKs
BSS138N
BSS138N
Q67042-S4184
Q67042-S4190
E6327: 3000 pcs/reel
E6433: 10000 pcs/reel
SKs
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
I D
T A=25 °C
T A=70 °C
T A=25 °C
Continuous drain current
0.23
0.18
0.92
A
I D,pulse
dv /dt
V GS
Pulsed drain current
Reverse diode dv /dt
Gate source voltage
I D=0.23 A, V DS=48 V,
di /dt =200 A/µs,
T j,max=150 °C
6
kV/µs
V
±20
ESD sensitivity (HBM) as per
MIL-STD 883
Class 1
P tot
T A=25 °C
Power dissipation
0.36
W
T j, T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 ... 150
55/150/56
°C
Rev. 2.1
page 1
2004-04-15
BSS138N
Unit
Values
typ.
Parameter
Symbol Conditions
min.
max.
Thermal characteristics
Thermal resistance,
junction - minimal footprint
R thJA
-
-
350 K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS V GS= 0 V, I D=250 µA
V GS(th) V GS=V DS, I D=26 µA
Drain-source breakdown voltage
Gate threshold voltage
60
0.6
-
-
1.0
-
-
V
1.4
0.1
V DS=60 V,
I D (off)
Drain-source leakage current
µA
V GS=0 V, T j=25 °C
V DS=60 V,
V GS=0 V, T j=150 °C
-
10
100
I GSS
V GS=20 V, V DS=0 V
Gate-source leakage current
-
-
1
10
nA
R DS(on) V GS=4.5 V, I D=0.03 A
Drain-source on-state resistance
3.3
4.0
Ω
V GS=4.5 V, I D=0.19 A
V GS=10 V, I D=0.23 A
-
-
3.5
2.2
0.2
6.0
3.5
-
|V DS|>2|I D|R DS(on)max
I D=0.18 A
,
g fs
Transconductance
0.1
S
Rev. 2.1
page 2
2004-04-15
BSS138N
Unit
Values
typ.
Parameter
Symbol Conditions
min.
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
-
-
-
-
-
-
-
32
7.2
2.8
2.3
3.0
6.7
8.2
43
10
pF
ns
V GS=0 V, V DS=25 V,
C oss
Crss
t d(on)
t r
f =1 MHz
4.2
3.5
4.5
10
V DD=30 V, V GS=10 V,
I D=0.23 A, R G=6 Ω
t d(off)
t f
Turn-off delay time
Fall time
12
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
0.10
0.3
1.0
3.3
0.14 nC
0.4
Q gd
V DD=48 V, I D=0.23 A,
V GS=0 to 10 V
Q g
1.4
V plateau
Gate plateau voltage
-
V
A
Reverse Diode
I S
Diode continous forward current
Diode pulse current
-
-
-
-
0.23
0.92
T A=25 °C
I S,pulse
V GS=0 V, I F=0.23 A,
T j=25 °C
V SD
Diode forward voltage
-
0.83
1.2
V
t rr
Reverse recovery time
-
-
9.1
3.3
14.5 ns
V R=30 V, I F=0.23 A,
di F/dt =100 A/µs
Q rr
Reverse recovery charge
5
nC
Rev. 2.1
page 3
2004-04-15
BSS138N
1 Power dissipation
2 Drain current
P tot=f(T A)
I D=f(T A); V GS≥10 V
0.4
0.3
0.2
0.1
0
0.25
0.2
0.15
0.1
0.05
0
0
40
80
120
160
0
40
80
120
160
T A [°C]
T A [°C]
3 Safe operation area
I D=f(V DS); T A=25 °C; D =0
parameter: t p
4 Max. transient thermal impedance
Z thJA=f(t p)
parameter: D =t p/T
101
103
limited by on-state
resistance
10 µs
100
10-1
10-2
0.5
102
100 µs
0.2
1 ms
0.1
10 ms
0.05
0.02
101
100 ms
DC
0.01
single pulse
100
10-3
1
10-5 10-4 10-3 10-2 10-1 100 101
10
100
t p [s]
V DS [V]
Rev. 2.1
page 4
2004-04-15
BSS138N
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
0.6
10
3.2 V
2.9 V
4 V
3.5 V
10 V
7 V
5 V
4.5 V
0.5
0.4
0.3
0.2
0.1
0
8
6
4
2
0
4 V
3.5 V
4.5 V
5 V
3.2 V
2.9 V
7 V
10 V
0
1
2
3
4
5
0
0.1
0.2
0.3
0.4
0.5
V DS [V]
I D [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
0.6
0.5
0.4
0.3
0.2
0.1
0
0.4
0.35
0.3
0.25
0.2
0.15
0.1
0.05
0
0.00
0
1
2
3
4
5
0.10
0.20
I D [A]
0.30
0.40
V GS [V]
Rev. 2.1
page 5
2004-04-15
BSS138N
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
V GS(th)=f(T j); V DS=VGS; I D=26 µA
parameter: I D
R DS(on)=f(T j); I D=0.23 A; V GS=10 V
8
6
2
1.6
98 %
1.2
0.8
0.4
0
typ
98 %
4
2 %
typ
2
0
-0.4
-60
-20
20
60
100
140
-60
-20
20
60
T j [°C]
100
140
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I F=f(V SD
C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C
)
parameter: T j
102
100
150 °C, 98%
25 °C
25 °C, 98%
150 °C
Ciss
10-1
101
Coss
Crss
10-2
100
10-3
0
0
10
20
30
0.4
0.8
1.2
V SD [V]
1.6
2
2.4
V DS [V]
Rev. 2.1
page 6
2004-04-15
BSS138N
13 Typ. gate charge
V GS=f(Q gate); I D=0.23 A pulsed
parameter: V DD
14 Drain-source breakdown voltage
V BR(DSS)=f(T j); I D=250 µA
70
65
60
55
50
12
10
8
30 V
48 V
12 V
6
4
2
0
-60
-20
20
60
100
140
180
0
0.2
0.4
0.6
0.8
1
Q gate [nC]
T j [°C]
Rev. 2.1
page 7
2004-04-15
BSS138N
Package Outline:
Footprint:
Packaging:
Rev. 2.1
page 8
2004-04-15
BSS138N
Published by
Infineon Technologies AG
Bereich Kommunikation
St.-Martin-Straße 53
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as
warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices, please contact your
nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide
(see address list).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact your nearest Infineon Technologies office.
Infineon Technologies' components may only be used in life-support devices or systems with the
expressed written approval of Infineon Technologies if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 2.1
page 9
2004-04-15
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