BSS138NL6327 [INFINEON]
Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-3;
| 型号： | BSS138NL6327 |
| 厂家： | 
Infineon |
| 描述： | Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-3 光电二极管 晶体管 |
| 文件： | 总9页 (文件大小：462K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSS138N
SIPMOS® Small-Signal-Transistor
Features
Product Summary
VDS
60
V
Ω
A
• N-channel
RDS(on),max
ID
3.5
• Enhancement mode
0.23
• Logic level
• dv /dt rated
• Pb-free lead-plating; RoHS compliant
• Qualified according to AEC Q101
• Halogen free according to IEC61249-2-21
PG-SOT-23
Type
Package
Tape and Reel
Marking
SKs
BSS138N
BSS138N
PG-SOT-23 L6327: 3000
PG-SOT-23 L6433: 10000
SKs
Value
Parameter
Symbol Conditions
Unit
I D
T A=25 °C
T A=70 °C
T A=25 °C
Continuous drain current
0.23
0.18
0.92
A
I D,pulse
dv /dt
V GS
Pulsed drain current
I D=0.23 A, V DS=48 V,
di /dt =200 A/µs,
Reverse diode dv /dt
6
kV/µs
V
T
j,max=150 °C
Gate source voltage
±20
Class 1 (<1999V)
Class 0 (<250V)
0.36
ESD sensitivity
MIL-STD 883 (HBM)
JESD22-A114 (HBM)
T A=25 °C
ESD sensitivity
P tot
Power dissipation
W
T j, T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 ... 150
°C
55/150/56
Rev. 2.85
page 1
2012-04-04
BSS138N
Unit
Values
typ.
Parameter
Symbol Conditions
min.
max.
Thermal characteristics
Thermal resistance,
junction - minimal footprint
R thJA
-
-
350 K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS V GS= 0 V, I D=250 µA
V GS(th) V GS=V DS, I D=26 µA
Drain-source breakdown voltage
Gate threshold voltage
60
0.6
-
-
1.0
-
-
V
1.4
0.1
V DS=60 V,
I D (off)
Drain-source leakage current
µA
V
GS=0 V, T j=25 °C
V
V
DS=60 V,
GS=0 V, T j=150 °C
-
-
5
I GSS
V GS=20 V, V DS=0 V
Gate-source leakage current
-
-
1
10
nA
R DS(on) V GS=4.5 V, I D=0.03 A
Drain-source on-state resistance
3.3
4.0
Ω
V
V
GS=4.5 V, I D=0.19 A
GS=10 V, I D=0.23 A
-
-
3.5
2.2
0.2
6.0
3.5
-
|V DS|>2|I D|R DS(on)max
I D=0.18 A
,
g fs
Transconductance
0.1
S
Rev. 2.85
page 2
2012-04-04
BSS138N
Unit
Values
typ.
Parameter
Symbol Conditions
min.
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
-
-
-
-
-
-
-
32
7.2
2.8
2.3
3.0
6.7
8.2
41
9.5
3.8
3.5
4.5
10
pF
ns
V
GS=0 V, V DS=25 V,
C oss
Crss
t d(on)
t r
f =1 MHz
V
DD=30 V, V GS=10 V,
I D=0.23 A, R G=6 Ω
t d(off)
t f
Turn-off delay time
Fall time
12.3
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
0.10
0.3
1.0
3.3
0.14 nC
0.4
Q gd
V
V
DD=48 V, I D=0.23 A,
GS=0 to 10 V
Q g
1.4
V plateau
Gate plateau voltage
-
V
A
Reverse Diode
I S
Diode continous forward current
Diode pulse current
-
-
-
-
0.23
0.92
T A=25 °C
I S,pulse
V GS=0 V, I F=0.23 A,
T j=25 °C
V SD
Diode forward voltage
-
0.83
1.2
V
t rr
Reverse recovery time
-
-
9.1
3.3
14.5 ns
V R=30 V, I F=0.23 A,
di F/dt =100 A/µs
Q rr
Reverse recovery charge
5
nC
Rev. 2.85
page 3
2012-04-04
BSS138N
1 Power dissipation
2 Drain current
P tot=f(T A)
I D=f(T A); V GS≥10 V
0.4
0.3
0.2
0.1
0
0.25
0.2
0.15
0.1
0.05
0
0
40
80
120
160
0
40
80
120
160
TA [°C]
TA [°C]
3 Safe operating area
I D=f(V DS); T A=25 °C; D =0
parameter: t p
4 Max. transient thermal impedance
Z thJA=f(t p)
parameter: D =t p/T
101
103
limited by on-state
resistance
10 µs
0.5
100
10-1
10-2
102
100 µs
0.2
1 ms
0.1
10 ms
0.05
0.02
101
100 ms
DC
0.01
single pulse
10-3
1
100
10-5 10-4 10-3 10-2 10-1 100 101
10
100
VDS [V]
tp [s]
Rev. 2.85
page 4
2012-04-04
BSS138N
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
0.6
10
2.9 V 3.2 V
3.5 V
4 V
10 V
7 V
5 V
4.5 V
0.5
0.4
0.3
0.2
0.1
0
8
6
4
2
0
4 V
3.5 V
4.5 V
5 V
3.2 V
2.9 V
7 V
10 V
0
1
2
3
4
5
0
0.1
0.2
0.3
0.4
0.5
VDS [V]
ID [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
0.6
0.5
0.4
0.3
0.2
0.1
0
0.4
0.35
0.3
0.25
0.2
0.15
0.1
0.05
0
0
1
2
3
4
5
0.00
0.10
0.20
ID [A]
0.30
0.40
VGS [V]
Rev. 2.85
page 5
2012-04-04
BSS138N
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
V GS(th)=f(T j); V DS=VGS; I D=26 µA
parameter: I D
R
DS(on)=f(T j); I D=0.23 A; V GS=10 V
8
2
1.6
1.2
0.8
0.4
0
6
98 %
typ
98 %
4
typ
2 %
2
0
-60
-20
20
60
100
140
-60
-20
20
60
100
140
Tj [°C]
Tj [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I F=f(V SD
C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C
)
parameter: T j
102
100
150 °C, 98%
25 °C
25 °C, 98%
150 °C
Ciss
10-1
101
Coss
Crss
10-2
100
10-3
0
0
10
20
30
0.4
0.8
1.2
VSD [V]
1.6
2
2.4
VDS [V]
Rev. 2.85
page 6
2012-04-04
BSS138N
13 Typ. gate charge
GS=f(Q gate); I D=0.23 A pulsed
14 Drain-source breakdown voltage
V
V BR(DSS)=f(T j); I D=250 µA
parameter: V DD
70
65
60
55
50
12
30 V
10
8
48 V
12 V
6
4
2
0
0
-60
-20
20
60
100
140
180
0.2
0.4
0.6
0.8
1
Qgate [nC]
Tj [°C]
Rev. 2.85
page 7
2012-04-04
BSS138N
Package Outline:
Footprint:
Packaging:
Dimensions in mm
Rev. 2.85
page 8
2012-04-04
BSS138N
Published by
Infineon Technologies AG
Bereich Kommunikation
St.-Martin-Straße 53
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as
warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices, please contact your
nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide
(see address list).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact your nearest Infineon Technologies office.
Infineon Technologies' components may only be used in life-support devices or systems with the
expressed written approval of Infineon Technologies if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 2.85
page 9
2012-04-04
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