BS107ARLRM [ONSEMI]

Small Signal MOSFET 250 mAmps, 200 Volts; 小信号MOSFET 250毫安, 200伏
BS107ARLRM
型号: BS107ARLRM
厂家: ONSEMI    ONSEMI
描述:

Small Signal MOSFET 250 mAmps, 200 Volts
小信号MOSFET 250毫安, 200伏

文件: 总8页 (文件大小:55K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BS107, BS107A  
Preferred Device  
Small Signal MOSFET  
250 mAmps, 200 Volts  
N–Channel TO–92  
MAXIMUM RATINGS  
http://onsemi.com  
Rating  
Drain–Source Voltage  
Symbol  
Value  
Unit  
250 mAMPS  
200 VOLTS  
V
DS  
200  
Vdc  
Gate–Source Voltage  
– Continuous  
V
±20  
±30  
Vdc  
Vpk  
GS  
R
R
= 14 (BS107)  
DS(on)  
– Non–repetitive (t 50 µs)  
V
GSM  
p
= 6.4 (BS107A)  
DS(on)  
Drain Current  
mAdc  
Continuous (Note 1.)  
Pulsed (Note 2.)  
I
250  
500  
D
N–Channel  
I
DM  
D
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
350  
mW  
A
D
Operating and Storage Junction  
Temperature Range  
T , T  
J stg  
–55 to  
150  
°C  
G
1. The Power Dissipation of the package may result in a lower continuous drain  
current.  
2. Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2.0%.  
S
TO–92  
CASE 29  
Style 30  
1
2
3
MARKING DIAGRAM  
& PIN ASSIGNMENT  
BS107  
YWW  
1
3
Drain  
Source  
2
Gate  
Y
WW  
= Year  
= Work Week  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 4 of this data sheet.  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2000  
1
Publication Order Number:  
November, 2000 – Rev. 2  
BS107/D  
BS107, BS107A  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Zero–Gate–Voltage Drain Current (V  
= 130 Vdc, V  
= 0)  
I
DSS  
200  
30  
nAdc  
Vdc  
DS  
Drain–Source Breakdown Voltage (V  
GS  
= 0, I = 100 µAdc)  
V
(BR)DSX  
GS  
= 15 Vdc, V  
D
Gate Reverse Current (V  
GS  
= 0)  
I
0.01  
10  
nAdc  
DS  
GSS  
ON CHARACTERISTICS (Note 2.)  
Gate Threshold Voltage (I = 1.0 mAdc, V  
D
= V  
)
V
1.0  
3.0  
Vdc  
DS  
GS  
GS(Th)  
Static Drain–Source On Resistance  
r
Ohms  
DS(on)  
BS107 (V  
(V  
BS107A (V  
= 2.6 Vdc, I = 20 mAdc)  
28  
14  
GS  
GS  
GS  
D
= 10 Vdc, I = 200 mAdc)  
D
= 10 Vdc)  
(I = 100 mAdc)  
D
4.5  
4.8  
6.0  
6.4  
(I = 250 mAdc)  
D
SMALL–SIGNAL CHARACTERISTICS  
Input Capacitance  
C
60  
6.0  
30  
pF  
pF  
iss  
rss  
oss  
(V  
DS  
= 25 Vdc, V  
= 0, f = 1.0 MHz)  
GS  
Reverse Transfer Capacitance  
C
(V  
DS  
= 25 Vdc, V  
= 0, f = 1.0 MHz)  
GS  
GS  
Output Capacitance  
(V = 25 Vdc, V  
C
pF  
= 0, f = 1.0 MHz)  
DS  
Forward Transconductance  
(V = 25 Vdc, I = 250 mAdc)  
g
200  
400  
mmhos  
fs  
DS  
D
SWITCHING CHARACTERISTICS  
Turn–On Time  
t
t
6.0  
12  
15  
15  
ns  
ns  
on  
Turn–Off Time  
off  
2. Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2.0%.  
RESISTIVE SWITCHING  
+25 V  
23  
TO SAMPLING SCOPE  
t
on  
t
off  
50 INPUT  
20 dB  
50 ATTENUATOR  
V
V
in  
out  
PULSE GENERATOR  
50  
90%  
10%  
90%  
40 pF  
OUTPUT V  
out  
INVERTED  
1 M  
50  
90%  
10 V  
50%  
50%  
PULSE WIDTH  
INPUT V  
in  
10%  
Figure 2. Switching Waveforms  
Figure 1. Switching Test Circuit  
http://onsemi.com  
2
BS107, BS107A  
10  
200  
180  
160  
140  
120  
100  
80  
V
GS  
= 0 V  
5.0  
2.0  
1.0  
V
GS  
= 10 V  
250 mA  
100 mA  
C
iss  
0.5  
0.2  
0.1  
60  
40  
C
oss  
20  
C
rss  
0
85 105 125 145  
40  
, DRAINā-āSOURCE VOLTAGE (VOLTS)  
50  
-55 -35 -15 +5.0 25  
45  
65  
0
10  
20  
30  
T , JUNCTION TEMPERATURE (°C)  
V
DS  
J
Figure 3. On Voltage versus Temperature  
Figure 4. Capacitance Variation  
0.7  
0.6  
0.8  
0.7  
10 V  
5.0 V  
V
GS  
= 10 V  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
0.5  
0.4  
0.3  
0.2  
0.1  
4.0 V  
3.0 V  
5.0  
, GATEā-āSOURCE VOLTAGE (VOLTS)  
9.0 10  
0
1.0 2.0 3.0 4.0  
6.0 7.0 8.0  
10  
, DRAINā-āSOURCE VOLTAGE (VOLTS)  
DS  
18  
20  
0
2.0 4.0  
6.0 8.0  
12  
14  
16  
V
GS  
V
Figure 5. Transfer Characteristic  
Figure 6. Output Characteristic  
0.7  
0.6  
0.5  
10 V  
5.0 V  
0.4  
0.3  
0.2  
0.1  
4.0 V  
3.0 V  
5.0  
1.0  
V
2.0  
3.0  
4.0  
, DRAINā-āSOURCE VOLTAGE (VOLTS)  
DS  
Figure 7. Saturation Characteristic  
http://onsemi.com  
3
BS107, BS107A  
ORDERING INFORMATION  
Device  
Package  
TO–92  
TO–92  
TO–92  
TO–92  
TO–92  
TO–92  
TO–92  
Shipping  
BS107  
1000 Unit/Box  
2000 Tape & Reel  
2000 Tape & Reel  
1000 Units/Box  
BS107RLRA  
BS107RL1  
BS107A  
BS107ARLRM  
BS107ARLRP  
BS107ARL1  
2000 Ammo Pack  
2000 Ammo Pack  
2000 Tape & Reel  
http://onsemi.com  
4
BS107, BS107A  
PACKAGE DIMENSIONS  
TO–92  
CASE 29–11  
ISSUE AL  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
A
B
2. CONTROLLING DIMENSION: INCH.  
3. CONTOUR OF PACKAGE BEYOND DIMENSION R  
IS UNCONTROLLED.  
4. LEAD DIMENSION IS UNCONTROLLED IN P AND  
BEYOND DIMENSION K MINIMUM.  
R
P
L
INCHES  
DIM MIN MAX  
MILLIMETERS  
SEATING  
PLANE  
K
MIN  
4.45  
4.32  
3.18  
0.407  
1.15  
2.42  
0.39  
12.70  
6.35  
2.04  
---  
MAX  
5.20  
5.33  
4.19  
0.533  
1.39  
2.66  
0.50  
---  
A
B
C
D
G
H
J
0.175  
0.170  
0.125  
0.016  
0.045  
0.095  
0.015  
0.500  
0.250  
0.080  
---  
0.205  
0.210  
0.165  
0.021  
0.055  
0.105  
0.020  
---  
D
X X  
G
J
H
V
K
L
---  
---  
C
N
P
R
V
0.105  
0.100  
---  
2.66  
2.54  
---  
SECTION X–X  
0.115  
0.135  
2.93  
3.43  
1
N
---  
---  
N
STYLE 30:  
PIN 1. DRAIN  
2. GATE  
3. SOURCE  
http://onsemi.com  
5
BS107, BS107A  
Notes  
http://onsemi.com  
6
BS107, BS107A  
Notes  
http://onsemi.com  
7
BS107, BS107A  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes  
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular  
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,  
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be  
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.  
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or  
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold  
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable  
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim  
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.  
PUBLICATION ORDERING INFORMATION  
NORTH AMERICA Literature Fulfillment:  
CENTRAL/SOUTH AMERICA:  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST)  
Email: ONlit–spanish@hibbertco.com  
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada  
Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada  
Email: ONlit@hibbertco.com  
Toll–Free from Mexico: Dial 01–800–288–2872 for Access –  
then Dial 866–297–9322  
ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support  
Phone: 303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time)  
Toll Free from Hong Kong & Singapore:  
Fax Response Line: 303–675–2167 or 800–344–3810 Toll Free USA/Canada  
N. American Technical Support: 800–282–9855 Toll Free USA/Canada  
001–800–4422–3781  
EUROPE: LDC for ON Semiconductor – European Support  
German Phone: (+1) 303–308–7140 (Mon–Fri 2:30pm to 7:00pm CET)  
Email: ONlit–german@hibbertco.com  
French Phone: (+1) 303–308–7141 (Mon–Fri 2:00pm to 7:00pm CET)  
Email: ONlit–french@hibbertco.com  
Email: ONlit–asia@hibbertco.com  
JAPAN: ON Semiconductor, Japan Customer Focus Center  
4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031  
Phone: 81–3–5740–2700  
Email: r14525@onsemi.com  
English Phone: (+1) 303–308–7142 (Mon–Fri 12:00pm to 5:00pm GMT)  
Email: ONlit@hibbertco.com  
ON Semiconductor Website: http://onsemi.com  
EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781  
For additional information, please contact your local  
Sales Representative.  
*Available from Germany, France, Italy, UK, Ireland  
BS107/D  

相关型号:

BS107ARLRP

Small Signal MOSFET 250 mAmps, 200 Volts
ONSEMI

BS107AT/R

TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 250MA I(D) | TO-92
ETC

BS107AZL1

250mA, 200V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
MOTOROLA

BS107B

Small Signal Field-Effect Transistor, 0.12A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
DIODES

BS107E6288

Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, TO-92, 3 PIN
INFINEON

BS107E6296

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
INFINEON

BS107G

Small Signal MOSFET 250 mAmps, 200 Volts
ONSEMI

BS107KL

N-Channel 240 -V (D-S) MOSFET
VISHAY

BS107KL-TA

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
VISHAY

BS107KL-TR1

N-Channel 240 -V (D-S) MOSFET
VISHAY

BS107KL-TR1-E3

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
VISHAY

BS107P

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ZETEX