BS107KL-TR1 [VISHAY]
N-Channel 240 -V (D-S) MOSFET; N沟道240 -V （D -S ）的MOSFET
| 型号： | BS107KL-TR1 |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 240 -V (D-S) MOSFET |
| 文件： | 总5页 (文件大小：64K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TN2404K/TN2404KL/BS107KL
Vishay Siliconix
N-Channel 240-V (D-S) MOSFET
PRODUCT SUMMARY
Part Number
VDS Min (V)
rDS(on) (W)
VGS(th) (V)
ID (A)
Qg (Typ)
TN2404K
4 @ V = 10 V
0.8 to 2.0
0.8 to 2.0
0.2
0.3
GS
240
4.87
TN2404KL/BS107KL
4 @ V = 10 V
GS
FEATURES
BENEFITS
APPLICATIONS
D Low On-Resistance: 4 W
D Low Offset Voltage
D High-Voltage Drivers: Relays, Solenoids,
Lamps, Hammers, Displays,
Transistors, etc.
D Telephone Mute Switches, Ringer Circuits
D Power Supply, Converters
D Motor Control
D Secondary Breakdown Free: 260 V D Full-Voltage Operation
D Low Power/Voltage Driven
D Low Input and Output Leakage
D Excellent Thermal Stability
D Easily Driven Without Buffer
D Low Error Voltage
D No High-Temperature
“Run-Away”
TO-236
(SOT-23)
TO-226AA
(TO-92)
TO-92-18RM
(TO-18 Lead Form)
1
2
3
1
2
3
Device Marking
Front View
S
G
D
D
G
S
G
S
1
2
Device Marking
Front View
3
D
“S” TN
2404KL
xxyy
“S” BS
107KL
xxyy
“S” = Siliconix Logo
xxyy = Date Code
“S” = Siliconix Logo
xxyy = Date Code
Top View
TN2404K
Top View
Top View
BS107KL
Marking Code: K1ywl
TN2404KL
K1 = Part Number Code for TN2404K
y = Year Code
w = Week Code
l = Lot Traceability
ORDERING INFORMATION
Standard
Part Number
Lead (Pb)-Free
Part Number
Option
TN2404K-T1
TN2404K-T1—E3
TN2404KL-TR1—E3
BS107KL-TR1—E3
With Tape and Reel Folding Option
TN2404KL-TR1
BS107KL-TR1
Spool Option
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
TN2404K
TN2404KL/BS107KL
Unit
Drain-Source Voltage
Gate-Source Voltage
V
240
DS
GS
V
V
"20
T = 25_C
0.2
0.16
0.8
0.3
0.25
1.4
A
Continuous Drain Current (T = 150_C)
I
J
D
T = 70_C
A
A
a
Pulsed Drain Current
I
DM
T = 25_C
0.36
0.8
A
Power Dissipation
P
W
D
T = 70_C
A
0.23
0.51
156
b
Thermal Resistance, Junction-to-Ambient
R
thJA
350
_C/W
_C
Operating Junction and Storage Temperature Range
T , T
J
−55 to 150
stg
Notes
a. Pulse width limited by maximum junction temperature.
b. Surface mounted on an FR4 board.
Document Number: 72225
S-41761—Rev. B , 04-Oct-04
www.vishay.com
1
TN2404K/TN2404KL/BS107KL
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
A
Limits
Typa
Parameter
Symbol
Test Conditions
Min
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
V
V
= 0 V, I = 100 mA
240
0.8
257
(BR)DSS
GS
D
V
V
V
= V , I = 250 mA
1.65
2.0
"100
1
GS(th)
DS
GS D
I
V
= 0 V, V = "20 V
nA
GSS
DS
GS
V
= 192 V, V = 0 V
GS
DS
Zero Gate Voltage Drain Current
I
mA
DSS
T
J
= 55_C
10
V
= 10 V, V =10 V
0.8
0.5
DS
GS
b
On-State Drain Current
I
A
D(on)
V
= 10 V, V = 4.5 V
GS
DS
V
= 10 V, I = 0.3 A
D
2.2
2.3
2.4
1.6
0.8
4
4
6
GS
GS
b
V
= 4.5 V, I = 0.2 A
D
Drain-Source On-Resistance
r
W
DS(on)
V
= 2.5 V, I = 0.1 A
D
GS
b
Forward Transconductance
g
V
= 10 V, I = 0.3 A
S
V
fs
DS
D
Diode Forward Voltage
V
I
= 0.3 A, V = 0 V
1.2
8
SD
S
GS
Dynamica
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
4.87
0.56
1.53
5
g
Q
gs
Q
gd
V
= 192 V, V = 10 V, I = 0.5 A
nC
nS
DS
GS
D
t
10
20
60
25
d(on)
Turn-On Time
t
r
12
V
= 60 V, R = 200 W
L
DD
I
D
] 0.3 A, V
= 10 V, R = 25 W
GEN G
t
35
d(off)
turn-Off Time
Notes
t
16
r
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW v300 ms duty cycle v2%.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 72225
S-41761—Rev. B , 04-Oct-04
www.vishay.com
2
TN2404K/TN2404KL/BS107KL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
1.8
1.4
V
= 10 thru 3 V
GS
T
C
= −55_C
1.2
1.0
0.8
0.6
0.4
0.2
0.0
25_C
1.5
1.2
0.9
0.6
0.3
0.0
125_C
2.5 V
2 V
0
1
2
3
4
5
0
1
2
3
4
5
6
V
− Drain-to-Source Voltage (V)
V
− Gate-to-Source Voltage (V)
GS
DS
On-Resistance vs. Drain Current
Capacitance
5
4
3
2
1
0
300
250
200
150
100
50
C
iss
V
= 4.5 V
GS
V
= 10 V
GS
C
rss
C
oss
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
10
20
30
40
50
I
D
− Drain Current (A)
V
− Drain-to-Source Voltage (V)
DS
Gate Charge
On-Resistance vs. Junction Temperature
10
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V
I
= 10 V
V
I
= 192 V
GS
D
DS
D
= 0.3 A
= 0.5 A
8
6
4
2
0
V
D
= 4.5 V
GS
I
= 0.2 A
0
1
2
3
4
5
−50 −25
0
25
50
75
100 125 150
Q
g
− Total Gate Charge (nC)
T
J
− Junction Temperature (_C)
Document Number: 72225
S-41761—Rev. B , 04-Oct-04
www.vishay.com
3
TN2404K/TN2404KL/BS107KL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
8
7
6
5
4
3
2
1
0
10
I
= 100 mA
D
1
I
D
= 50 mA
T
J
= −55_C
0.1
T
= 25_C
J
0.01
I
D
= 10 mA
T
J
= 150_C
0.001
0
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
− Source-to-Drain Voltage (V)
V
− Gate-to-Source Voltage (V)
GS
SD
Threshold Voltage
0.3
0.2
0.1
I
D
= 250 mA
−0.0
−0.1
−0.2
−0.3
−0.4
−0.5
−50 −25
0
25
50
75
100 125 150
T
J
− Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient (TO-236, TN2404K Only)
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
t
1
t
0.02
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
=350_C/W
thJA
(t)
3. T − T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
−4
−3
−2
−1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 72225
S-41761—Rev. B , 04-Oct-04
www.vishay.com
4
TN2404K/TN2404KL/BS107KL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient
(TO-226AA, TN2404KL and TO-92-18RM, BS107KL Only)
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.05
P
DM
0.1
t
1
t
2
t
t
1
2
0.02
0.01
1. Duty Cycle, D =
2. Per Unit Base = R
= 156_C/W
thJA
(t)
3. T − T = P
Z
JM
A
DM thJA
Single Pulse
0.01
0.1
1
10
100
1 K
10 K
t
1
− Square Wave Pulse Duration (sec)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?72225.
Document Number: 72225
S-41761—Rev. B , 04-Oct-04
www.vishay.com
5
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