BD135G_13 [ONSEMI]
Plastic Medium-Power Silicon NPN Transistors;
| 型号： | BD135G_13 |
| 厂家： | 
ONSEMI |
| 描述： | Plastic Medium-Power Silicon NPN Transistors |
| 文件： | 总4页 (文件大小：86K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BD135G, BD137G, BD139G
Plastic Medium-Power
Silicon NPN Transistors
This series of plastic, medium−power silicon NPN transistors are
designed for use as audio amplifiers and drivers utilizing
complementary or quasi complementary circuits.
http://onsemi.com
Features
1.5 A POWER TRANSISTORS
NPN SILICON
• High DC Current Gain
• BD 135, 137, 139 are complementary with BD 136, 138, 140
45, 60, 80 V, 12.5 W
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
COLLECTOR
2, 4
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
3
Collector−Emitter Voltage
BD135G
BD137G
V
CEO
Vdc
BASE
45
60
80
1
BD139G
EMITTER
Collector−Base Voltage
BD135G
BD137G
V
V
Vdc
CBO
45
60
100
BD139G
Emitter−Base Voltage
Collector Current
5.0
1.5
0.5
Vdc
Adc
Adc
EBO
TO−225
CASE 77−09
STYLE 1
I
C
Base Current
I
B
1
2
3
Total Device Dissipation
P
D
D
@ T = 25°C
1.25
10
Watts
mW/°C
A
Derate above 25°C
MARKING DIAGRAM
Total Device Dissipation
P
@ T = 25°C
12.5
100
Watts
mW/°C
C
Derate above 25°C
YWW
BD1xxG
Operating and Storage Junction
Temperature Range
T , T
–55 to +150
°C
J
stg
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
Y
WW
= Year
= Work Week
BD1xx = Device Code
xx = 35, 37, 39
THERMAL CHARACTERISTICS
G
= Pb−Free Package
Characteristic
Symbol
Max
10
Unit
°C/W
°C/W
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
R
q
JC
JA
ORDERING INFORMATION
R
100
q
Package
Shipping
Device
BD135G
TO−225
500 Units / Box
(Pb−Free)
BD135TG
BD137G
BD139G
TO−225
(Pb−Free)
50 Units / Rail
TO−225
(Pb−Free)
500 Units / Box
500 Units / Box
TO−225
(Pb−Free)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
December, 2013 − Rev. 17
BD135/D
BD135G, BD137G, BD139G
ELECTRICAL CHARACTERISTICS (T = 25_C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
UnIt
Collector−Emitter Sustaining Voltage*
(I = 0.03 Adc, I = 0)
BV
*
Vdc
CEO
C
B
BD135G
BD137G
BD139G
45
60
80
−
−
−
Collector Cutoff Current
(V = 30 Vdc, I = 0)
I
mAdc
CBO
−
−
0.1
10
CB
E
(V = 30 Vdc, I = 0, T = 125_C)
CB
E
C
Emitter Cutoff Current
I
−
10
mAdc
EBO
(V = 5.0 Vdc, I = 0)
BE
C
DC Current Gain
h
FE
*
−
(I = 0.005 A, V = 2 V)
25
40
25
−
250
−
C
CE
(I = 0.15 A, V = 2 V)
C
CE
(I = 0.5 A V = 2 V)
C
CE
Collector−Emitter Saturation Voltage*
(I = 0.5 Adc, I = 0.05 Adc)
V
*
Vdc
Vdc
CE(sat)
−
0.5
C
B
Base−Emitter On Voltage*
(I = 0.5 Adc, V = 2.0 Vdc)
V
*
BE(on)
−
1
C
CE
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
*Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
TYPICAL CHARACTERISTICS
1000
0.3
V
CE
= 2 V
150°C
I /I = 10
C
B
150°C
25°C
0.2
−55°C
−55°C
25°C
100
0.1
0
10
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 1. DC Current Gain
Figure 2. Collector−Emitter Saturation Voltage
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2
BD135G, BD137G, BD139G
TYPICAL CHARACTERISTICS
1.2
1.2
1.0
0.8
0.6
0.4
I /I = 10
V
CE
= 2 V
C
B
1.0
0.8
0.6
0.4
−55°C
25°C
−55°C
25°C
150°C
150°C
0.2
0
0.2
0
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 3. Base−Emitter Saturation Voltage
Figure 4. Base−Emitter On Voltage
1000
10
1
f = 1 MHz
0.1 ms
C
ib
5 ms
0.5 ms
100
T = 125°C
J
dc
C
ob
10
1
0.1
BD135
BD137
BD139
0.01
0.1
1
10
100
1
10
, COLLECTOR−EMITTER VOLTAGE (V)
80
V , REVERSE VOLTAGE (V)
V
CE
R
Figure 5. Capacitance
Figure 6. Active−Region Safe Operating Area
1.50
1.25
1.00
0.75
0.50
0.25
0
0
20
40
60
80
100
120 140 160
T , AMBIENT TEMPERATURE (°C)
A
Figure 7. Power Derating
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3
BD135G, BD137G, BD139G
PACKAGE DIMENSIONS
TO−225
CASE 77−09
ISSUE AC
4
1
3
2
2
1
3
FRONT VIEW
BACK VIEW
NOTES:
E
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. NUMBER AND SHAPE OF LUGS OPTIONAL.
A1
Q
A
MILLIMETERS
PIN 4
BACKSIDE TAB
DIM MIN
MAX
3.00
1.50
0.90
0.88
0.63
11.10
7.80
2.54
16.63
2.54
3.30
4.20
A
A1
b
2.40
1.00
0.60
0.51
0.39
10.60
7.40
2.04
14.50
1.27
2.90
3.80
D
b2
c
P
D
E
1
2
3
e
L
L1
P
Q
L1
STYLE 1:
PIN 1. EMITTER
L
2., 4. COLLECTOR
3. BASE
2X b2
e
2X
c
b
FRONT VIEW
SIDE VIEW
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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BD135/D
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