BD136 [KEC]

EPITAXIAL PLANAR PNP TRANSISTOR; 外延平面PNP晶体管
BD136
型号: BD136
厂家: KEC(KOREA ELECTRONICS)    KEC(KOREA ELECTRONICS)
描述:

EPITAXIAL PLANAR PNP TRANSISTOR
外延平面PNP晶体管

晶体 晶体管 局域网
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中文:  中文翻译
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SEMICONDUCTOR  
BD136  
EPITAXIAL PLANAR PNP TRANSISTOR  
TECHNICAL DATA  
GENERAL PURPOSE APPLICATION.  
A
B
D
C
FEATURES  
E
High Current. (Max. : -1.5A)  
Low Voltage (Max. : -45V)  
DC Current Gain : hFE=40Min. @IC=-0.15A  
Complementary to BD135.  
F
G
H
J
DIM MILLIMETERS  
A
B
C
D
E
8.3 MAX  
5.8  
K
L
0.7  
_
+
Φ3.2 0.1  
MAXIMUM RATING (Ta=25  
CHARACTERISTIC  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
)
3.5  
_
+
F
11.0 0.3  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATING  
-45  
UNIT  
V
G
H
J
2.9 MAX  
1.0 MAX  
1.9 MAX  
M
O
_
+
0.75 0.15  
K
L
N
P
_
+
15.5 0.5  
1
2
3
-45  
V
_
+
2.3 0.1  
M
N
O
P
_
+
0.65 0.15  
-5  
V
1.6  
1. EMITTER  
2. COLLECTOR  
3. BASE  
3.4 MAX  
-1.5  
A
IB  
Base Current  
-0.5  
A
1.25  
10  
Ta=25  
Tc=25  
Collector Power  
Dissipation  
TO-126  
PC  
W
Tj  
Junction Temperature  
150  
Tstg  
Storage Temperature Range  
-55 150  
ELECTRICAL CHARACTERISTICS (Ta=25  
)
CHARACTERISTIC  
Collector Cut-off Current  
SYMBOL  
ICBO  
TEST CONDITION  
VCB=-30V, IE=0  
MIN.  
TYP.  
MAX.  
UNIT  
-
-
-
-0.1  
-10  
-
A
A
IEBO  
V(BR)CEO  
hFE (1)  
hFE (2)  
hFE (3)  
VCE(sat)  
VBE  
VEB=-5V, IC=0  
Emitter Cut-off Current  
-
IC=-30mA, IB=0  
Collector-Emitter Breakdown Voltage  
-45  
25  
40  
25  
-
-
V
IC=-5mA, VCE=-2V  
IC=-150mA, VCE=-2V  
IC=-500mA, VCE=-2V  
IC=-500mA, IB=-50mA  
VCE=-2V, IC=-500mA  
VCE=-5V, IC=-50mA  
-
-
DC Current Gain  
-
250  
-
-
-
Collector-Emitter Saturation Voltage  
Base-Emitter Voltage  
-0.5  
-1.0  
-
V
V
-
-
fT  
Transition Frequency  
-
160  
MHz  
2003. 6. 16  
Revision No : 0  
1/1  

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