BD13516STU [ONSEMI]
1.5 A, 45V NPN Power Bipolar Junction Transistor;
| 型号： | BD13516STU |
| 厂家： | 
ONSEMI |
| 描述： | 1.5 A, 45V NPN Power Bipolar Junction Transistor 局域网 开关 晶体管 |
| 文件： | 总6页 (文件大小：255K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
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regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
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subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
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BD135 / 137 / 139
NPN Epitaxial Silicon Transistor
Features
• Complement to BD136, BD138 and BD140 respectively
Applications
• Medium Power Linear and Switching
TO-126
1. Emitter 2.Collector 3.Base
1
Ordering Information
Part Number
BD13516S
Marking
BD135-16
BD135-6
Package
Packing Method
Bulk
BD1356STU
BD13510STU
BD13516STU
BD13716STU
BD13710STU
BD13716S
BD135-10
BD135-16
BD137-16
BD137-10
BD137-16
BD139-16
BD139-10
BD139-16
BD139-6
Rail
TO-126 3L
Bulk
Rail
BD13916STU
BD13910S
Bulk
Rail
BD13916S
BD1396STU
BD13910STU
BD139-10
© 2007 Semiconductor Components Industries, LLC.
November-2017, Rev. 2
Publication Order Number:
BD139/D
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
Symbol
Parameter
Value
Units
BD135
BD137
BD139
BD135
BD137
BD139
45
VCBO
Collector-Base Voltage
Collector-Emitter Voltage
60
V
80
45
VCEO
60
V
80
5
VEBO
IC
ICP
IB
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
V
A
1.5
3.0
A
0.5
A
TC = 25°C
TA = 25°C
12.5
1.25
150
W
W
°C
°C
PC
Device Dissipation
TJ
Junction Temperature
Storage Temperature
TSTG
- 55 to +150
Electrical Characteristics
Values are at TC = 25°C unless otherwise noted.
Symbol
Parameter
Test Condition
Min.
45
Typ.
Max.
Units
BD135
Collector-Emitter Sustaining
Voltage
VCEO(sus)
BD137 IC = 30 mA, IB = 0
BD139
60
V
80
ICBO
IEBO
Collector Cut-off Current
Emitter Cut-off Current
VCB = 30 V, IE = 0
VEB = 5 V, IC = 0
0.1
10
μA
μA
hFE1
VCE = 2 V, IC = 5 mA
VCE = 2 V, IC = 0.5 A
VCE = 2 V, IC = 150 mA
25
25
40
hFE2
DC Current Gain
hFE3
250
0.5
1
VCE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
IC = 500 mA, IB = 50 mA
VCE = 2 V, IC = 0.5 A
V
V
VBE(on)
hFE Classification
Classification
6
10
16
hFE3
40 ~ 100
63 ~ 160
100 ~ 250
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2
Typical Performance Characteristics
100
500
450
400
350
300
250
200
150
100
50
VCE = 2V
90
80
70
60
50
40
30
20
10
0
0
1E-3
0.01
0.1
1
10
10
100
1000
IC[A], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage
10
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
IC MAX. (Pulsed)
10us
IC MAX. (Continuous)
100us
1
0.1
0.01
1
10
100
1E-3
0.01
0.1
1
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 3. Base-Emitter Voltage
Figure 4. Safe Operating Area
20.0
17.5
15.0
12.5
10.0
7.5
5.0
2.5
0.0
0
25
50
75
100
125
150
175
TC[oC], CASE TEMPERATURE
Figure 5. Power Derating
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3
Physical Dimensions
TO-126 3L
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Figure 6. TO-126 (SOT-32) UNIFIED DRAWING (TSTU, TSSTU, STANDARD)
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4
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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