BC858BLT1G [ONSEMI]
General Purpose Transistors(PNP Silicon); 通用晶体管（ PNP硅）
| 型号： | BC858BLT1G |
| 厂家： | 
ONSEMI |
| 描述： | General Purpose Transistors(PNP Silicon) |
| 文件： | 总8页 (文件大小：112K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC856ALT1 Series
Preferred Devices
General Purpose
Transistors
PNP Silicon
Features
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• Pb−Free Packages are Available
COLLECTOR
3
1
BASE
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
2
A
EMITTER
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
BC856
BC857
V
CEO
V
CBO
V
EBO
−65
−45
−30
V
BC858, BC859
3
Collector-Base Voltage
Emitter−Base Voltage
BC856
BC857
−80
−50
−30
V
SOT−23
CASE 318
STYLE 6
1
BC858, BC859
2
−5.0
V
Collector Current − Continuous
I
C
−100
mAdc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
MARKING DIAGRAM
3
THERMAL CHARACTERISTICS
xxM
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board,
P
D
1
2
(Note 1) T = 25°C
225
1.8
mW
mW/°C
A
Derate above 25°C
xx = Device Code
M = Date Code
Thermal Resistance,
Junction−to−Ambient
R
556
°C/W
q
JA
Total Device Dissipation Alumina
P
D
Substrate, (Note 2) T = 25°C
Derate above 25°C
300
2.4
mW
mW/°C
A
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Thermal Resistance,
Junction−to−Ambient
R
417
°C/W
°C
q
JA
Junction and Storage Temperature
T , T
J
−55 to
+150
stg
Preferred devices are recommended choices for future use
and best overall value.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
June, 2004 − Rev. 8
BC856ALT1/D
BC856ALT1 Series
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
BC856 Series
BC857 Series
BC858, BC859 Series
V
−65
−45
−30
−
−
−
−
−
−
V
(BR)CEO
(I = −10 mA)
C
Collector−Emitter Breakdown Voltage
BC856 Series
BC857A, BC857B Only
BC858, BC859 Series
V
−80
−50
−30
−
−
−
−
−
−
V
V
V
(BR)CES
(BR)CBO
(BR)EBO
(I = −10 mA, V = 0)
C
EB
Collector−Base Breakdown Voltage
(I = −10 mA)
C
BC856 Series
BC857 Series
BC858, BC859 Series
V
V
−80
−50
−30
−
−
−
−
−
−
Emitter−Base Breakdown Voltage
(I = −1.0 mA)
E
BC856 Series
BC857 Series
BC858, BC859 Series
−5.0
−5.0
−5.0
−
−
−
−
−
−
Collector Cutoff Current (V = −30 V)
I
−
−
−
−
−15
−4.0
nA
mA
CB
CBO
Collector Cutoff Current (V = −30 V, T = 150°C)
CB
A
ON CHARACTERISTICS
DC Current Gain
(I = −10 mA, V = −5.0 V)
C
BC856A, BC857A, BC858A
BC856B, BC857B, BC858B
BC857C, BC858C
h
FE
−
−
−
90
150
270
−
−
−
−
CE
(I = −2.0 mA, V = −5.0 V)
BC856A, BC857A, BC858A
BC856B, BC857B, BC858B, BC859B
BC857C, BC858C, BC859C
125
220
420
180
290
520
250
475
800
C
CE
Collector−Emitter Saturation Voltage
(I = −10 mA, I = −0.5 mA)
V
V
V
V
CE(sat)
−
−
−
−
−0.3
−0.65
C
B
(I = −100 mA, I = −5.0 mA)
C
B
Base−Emitter Saturation Voltage
(I = −10 mA, I = −0.5 mA)
V
BE(sat)
−
−
−0.7
−0.9
−
−
C
B
(I = −100 mA, I = −5.0 mA)
C
B
Base−Emitter On Voltage
(I = −2.0 mA, V = −5.0 V)
V
BE(on)
−0.6
−
−
−
−0.75
−0.82
C
CE
(I = −10 mA, V = −5.0 V)
C
CE
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
f
100
−
−
−
−
MHz
pF
T
(I = −10 mA, V = −5.0 Vdc, f = 100 MHz)
C
CE
Output Capacitance
C
4.5
ob
(V = −10 V, f = 1.0 MHz)
CB
Noise Figure
NF
dB
(I = −0.2 mA, V = −5.0 Vdc, R = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
C
CE
S
BC856, BC857, BC858 Series
BC859 Series
−
−
−
−
10
4.0
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2
BC856ALT1 Series
BC857/BC858/BC859
2.0
1.5
−1.0
T = 25°C
−0.9
−0.8
−0.7
−0.6
−0.5
−0.4
−0.3
−0.2
−0.1
0
A
V
= −10 V
CE
T = 25°C
V
@ I /I = 10
C B
BE(sat)
A
1.0
0.7
0.5
V
BE(on)
@ V = −10 V
CE
0.3
0.2
V
@ I /I = 10
C B
CE(sat)
−0.2
−0.5 −1.0 −2.0
−5.0 −10 −20
−50 −100 −200
−0.1
−1.0
−10
−100
−0.2
−0.5
−2.0
−5.0
−20
−50
I , COLLECTOR CURRENT (mAdc)
C
I , COLLECTOR CURRENT (mAdc)
C
Figure 1. Normalized DC Current Gain
Figure 2. “Saturation” and “On” Voltages
1.0
1.2
1.6
2.0
2.4
2.8
−2.0
−1.6
−1.2
−0.8
−0.4
0
−55°C to +125°C
T = 25°C
A
I
=
I
= −50 mA
I
C
= −200 mA
= −100 mA
C
−10 mA
C
I
C
I
= −20 mA
C
−0.02
−0.1
−1.0
−10 −20
−0.2
−1.0
−10
−100
I , BASE CURRENT (mA)
B
I , COLLECTOR CURRENT (mA)
C
Figure 3. Collector Saturation Region
Figure 4. Base−Emitter Temperature Coefficient
10
7.0
5.0
400
300
C
ib
T = 25°C
A
200
150
V
= −10 V
CE
T = 25°C
A
100
80
C
ob
3.0
2.0
60
40
30
1.0
−0.4
20
−0.5
−0.6 −1.0
−2.0
−4.0 −6.0
−10
−20 −30 −40
−1.0
−2.0 −3.0 −5.0
−10
−20 −30 −50
V , REVERSE VOLTAGE (VOLTS)
R
I , COLLECTOR CURRENT (mAdc)
C
Figure 5. Capacitances
Figure 6. Current−Gain − Bandwidth Product
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3
BC856ALT1 Series
BC856
−1.0
T = 25°C
J
V
= −5.0 V
CE
T = 25°C
−0.8
−0.6
A
V
@ I /I = 10
C B
BE(sat)
2.0
1.0
0.5
V
@ V = −5.0 V
CE
BE
−0.4
−0.2
0
0.2
V
@ I /I = 10
C B
CE(sat)
−0.1 −0.2
−1.0 −2.0
−10 −20
−100 −200
−50
−0.2 −0.5 −1.0 −2.0
−5.0 −10 −20
−50 −100 −200
−5.0
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 7. DC Current Gain
Figure 8. “On” Voltage
−2.0
−1.6
−1.2
−0.8
−0.4
0
−1.0
−1.4
−1.8
−2.2
−2.6
−3.0
−100 mA −200 mA
I
=
−20 mA
−50 mA
C
−10 mA
q
for V
BE
VB
−55°C to 125°C
T = 25°C
J
−0.02 −0.05 −0.1 −0.2
−0.5 −1.0 −2.0
−5.0 −10 −20
−0.2 −0.5 −1.0 −2.0
−5.0 −10 −20
−50 −100 −200
I , BASE CURRENT (mA)
B
I , COLLECTOR CURRENT (mA)
C
Figure 9. Collector Saturation Region
Figure 10. Base−Emitter Temperature Coefficient
40
20
V
CE
= −5.0 V
500
T = 25°C
J
C
ib
200
100
50
10
8.0
6.0
4.0
C
ob
20
2.0
−0.1 −0.2
−0.5 −1.0 −2.0
−5.0 −10 −20
−50 −100
−1.0
−10
−100
V , REVERSE VOLTAGE (VOLTS)
R
I , COLLECTOR CURRENT (mA)
C
Figure 11. Capacitance
Figure 12. Current−Gain − Bandwidth Product
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4
BC856ALT1 Series
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
SINGLE PULSE
0.05
Z
(t) = r(t) R
q
JC
0.1
q
JC
0.1
0.07
0.05
R
Z
= 83.3°C/W MAX
(t) = r(t) R
q
JA
q
JC
P
(pk)
SINGLE PULSE
q
JA
R
qJA
= 200°C/W MAX
t
1
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
t
2
0.03
0.02
DUTY CYCLE, D = t /t
1 2
1
T
− T = P
C
R (t)
q
JC
J(pk)
(pk)
0.01
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1.0ꢁk
2.0ꢁk
5.0ꢁk 10ꢁk
t, TIME (ms)
Figure 13. Thermal Response
The safe operating area curves indicate I −V limits of
−200
C
CE
1 s
3 ms
the transistor that must be observed for reliable operation.
Collector load lines for specific circuits must fall below the
limits indicated by the applicable curve.
−100
−50
T = 25°C
T = 25°C
A
J
The data of Figure 14 is based upon T
= 150°C; T or
J(pk)
C
T is variable depending upon conditions. Pulse curves are
A
valid for duty cycles to 10% provided T
≤ 150°C. T
BC558, BC559
BC557
BC556
J(pk)
J(pk)
may be calculated from the data in Figure 13. At high case or
ambient temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by the secondary breakdown.
−10
−5.0
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
−2.0
−1.0
−5.0
−10
−30 −45 −65 −100
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 14. Active Region Safe Operating Area
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5
BC856ALT1 Series
ORDERING INFORMATION
Device
†
Marking
Package
SOT−23
SOT−23
SOT−23
Shipping
BC856ALT1
3A
3A
3B
3B
3,000 / Tape & Reel
10,000 / Tape & Reel
BC856ALT3
BC856BLT1
3,000 / Tape & Reel
BC856BLT1G
SOT−23
(Pb−Free)
BC856BLT3
BC857ALT1
BC857BLT1
BC857BLT3
BC857BLT3G
3B
3E
3F
3F
3F
SOT−23
SOT−23
SOT−23
SOT−23
10,000 / Tape & Reel
3,000 / Tape & Reel
3,000 / Tape & Reel
10,000 / Tape & Reel
SOT−23
(Pb−Free)
BC857CLT1
3G
3G
SOT−23
3,000 / Tape & Reel
3,000 / Tape & Reel
BC857CLT1G
SOT−23
(Pb−Free)
BC858ALT1
3J
3J
SOT−23
3,000 / Tape & Reel
BC858ALT1G
SOT−23
(Pb−Free)
BC858BLT1
3K
3K
SOT−23
3,000 / Tape & Reel
10,000 / Tape & Reel
BC858BLT1G
SOT−23
(Pb−Free)
BC858BLT3
BC858CLT1
BC858CLT1G
3L
3L
3L
SOT−23
SOT−23
3,000 / Tape & Reel
10,000 / Tape & Reel
SOT−23
(Pb−Free)
BC858CLT3
3L
3L
SOT−23
BC858CLT3G
SOT−23
(Pb−Free)
BC859BLT1
BC859BLT3
BC859CLT1
BC859CLT3
4B
4B
4C
4C
SOT−23
SOT−23
SOT−23
SOT−23
3,000 / Tape & Reel
10,000 / Tape & Reel
3,000 / Tape & Reel
10,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifi-
cations Brochure, BRD8011/D.
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6
BC856ALT1 Series
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−09
ISSUE AI
NOTES:
A
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
L
3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. 318−01, −02, AND −06 OBSOLETE, NEW STANDARD 318−09.
3
B
S
1
2
INCHES
MILLIMETERS
DIM
A
B
C
D
G
H
J
MIN
0.1102
MAX
0.1197
MIN
2.80
1.20
0.99
0.36
1.70
0.10
0.085
0.45
0.89
2.10
0.45
MAX
3.04
1.40
1.26
0.50
2.10
0.25
0.177
0.60
1.02
2.50
0.60
0.0472 0.0551
0.0385 0.0498
0.0140 0.0200
0.0670 0.0826
0.0040 0.0098
0.0034 0.0070
0.0180 0.0236
0.0350 0.0401
0.0830 0.0984
0.0177 0.0236
V
G
C
K
L
S
J
V
H
K
D
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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7
BC856ALT1 Series
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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Phone: 81−3−5773−3850
For additional information, please contact your
local Sales Representative.
BC856ALT1/D
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