BC847BTT1G [ONSEMI]
General Purpose Transistors NPN Silicon; 通用晶体管NPN硅
| 型号： | BC847BTT1G |
| 厂家： | 
ONSEMI |
| 描述： | General Purpose Transistors NPN Silicon |
| 文件： | 总6页 (文件大小：75K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC847ATT1, BC847BTT1,
BC847CTT1
General Purpose
Transistors
NPN Silicon
http://onsemi.com
These transistors are designed for general purpose amplifier
applications. They are housed in the SC−75/SOT−416 package which
is designed for low power surface mount applications.
COLLECTOR
3
Features
1
BASE
• Pb−Free Packages are Available*
2
EMITTER
MAXIMUM RATINGS (T = 25°C)
A
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Symbol
Max
45
Unit
V
V
CEO
V
CBO
V
EBO
3
CASE 463
SC−75/SOT−41
50
V
6.0
100
V
2
6
1
STYLE 1
Collector Current − Continuous
I
C
mAdc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
MARKING DIAGRAM
THERMAL CHARACTERISTICS
xxM
Characteristic
Symbol
Max
Unit
Total Device Dissipation,
FR−4 Board (Note 1)
P
D
200
mW
xx = Device Code
M = Date Code
T = 25°C
A
Derated above 25°C
1.6
mW/°C
°C/W
Thermal Resistance,
R
600
q
JA
Junction−to−Ambient (Note 1)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Total Device Dissipation,
FR−4 Board (Note 2)
P
D
300
mW
T = 25°C
A
Derated above 25°C
2.4
mW/°C
°C/W
Thermal Resistance,
R
400
q
JA
Junction−to−Ambient (Note 2)
Junction and Storage
Temperature Range
T , T
−55 to
+150
°C
J
stg
1. FR−4 @ min pad.
2. FR−4 @ 1.0 × 1.0 in pad.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
June, 2004 − Rev. 1
BC847ATT1/D
BC847ATT1, BC847BTT1, BC847CTT1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
V
V
V
V
V
(BR)CEO
(I = 10 mA)
C
BC847 Series
BC847 Series
BC847 Series
BC847 Series
45
50
50
6.0
−
−
−
−
−
−
−
−
Collector−Emitter Breakdown Voltage
V
(BR)CES
(BR)CBO
(BR)EBO
(I = 10 mA, V = 0)
C
EB
Collector−Base Breakdown Voltage
(I = 10 mA)
C
V
V
Emitter−Base Breakdown Voltage
(I = 1.0 mA)
E
Collector Cutoff Current (V = 30 V)
I
−
−
−
−
15
5.0
nA
mA
CB
CBO
(V = 30 V, T = 150°C)
CB
A
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(I = 10 mA, V = 5.0 V)
BC847A
BC847B
BC847C
−
−
−
90
150
270
−
−
−
C
CE
(I = 2.0 mA, V = 5.0 V)
BC847A
BC847B
BC847C
110
200
420
180
290
520
220
450
800
C
CE
Collector−Emitter Saturation Voltage (I = 10 mA, I = 0.5 mA)
V
−
−
−
−
0.25
0.6
V
V
C
B
CE(sat)
Collector−Emitter Saturation Voltage (I = 100 mA, I = 5.0 mA)
C
B
Base−Emitter Saturation Voltage (I = 10 mA, I = 0.5 mA)
V
−
−
0.7
0.9
−
−
C
B
BE(sat)
Base−Emitter Saturation Voltage (I = 100 mA, I = 5.0 mA)
C
B
Base−Emitter Voltage (I = 2.0 mA, V = 5.0 V)
V
BE(on)
580
−
660
−
700
770
mV
C
CE
Base−Emitter Voltage (I = 10 mA, V = 5.0 V)
C
CE
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
f
100
−
−
−
−
−
MHz
T
(I = 10 mA, V = 5.0 Vdc, f = 100 MHz)
C
CE
Output Capacitance (V = 10 V, f = 1.0 MHz)
C
4.5
10
pF
dB
CB
obo
Noise Figure
NF
(I = 0.2 mA, V = 5.0 Vdc, R = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
−
C
CE
S
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2
BC847ATT1, BC847BTT1, BC847CTT1
2.0
1.5
1.0
V
= 10 V
T = 25°C
A
0.9
0.8
0.7
CE
T = 25°C
A
V
@ I /I = 10
C B
BE(sat)
1.0
0.8
V
BE(on)
@ V = 10 V
CE
0.6
0.5
0.4
0.3
0.6
0.4
0.3
0.2
0.1
V
@ I /I = 10
C B
CE(sat)
0.2
0
0.1
0.2
0.5 1.0
2.0
5.0 10
20
50 100 200
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
I , COLLECTOR CURRENT (mAdc)
C
I , COLLECTOR CURRENT (mAdc)
C
Figure 1. Normalized DC Current Gain
Figure 2. “Saturation” and “On” Voltages
2.0
1.6
1.2
0.8
0.4
0
1.0
1.2
1.6
2.0
2.4
2.8
T = 25°C
−55°C to +125°C
A
I
C
= 200 mA
I
=
I
=
I
C
= 50 mA
I = 100 mA
C
C
C
10 mA 20 mA
0.02
0.1
1.0
10 20
0.2
1.0
10
100
I , BASE CURRENT (mA)
B
I , COLLECTOR CURRENT (mA)
C
Figure 3. Collector Saturation Region
Figure 4. Base−Emitter Temperature Coefficient
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3
BC847ATT1, BC847BTT1, BC847CTT1
BC847
1.0
0.1
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
t, TIME (s)
1.0
10
100
1000
Figure 5. Normalized Thermal Response
400
300
10
7.0
5.0
T = 25°C
A
200
C
ib
V
= 10 V
CE
T = 25°C
100
80
3.0
2.0
A
C
ob
60
40
30
20
1.0
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
50
0.4 0.6 0.8 1.0
2.0
4.0 6.0 8.0 10
20
40
I , COLLECTOR CURRENT (mAdc)
C
V , REVERSE VOLTAGE (VOLTS)
R
Figure 7. Current−Gain − Bandwidth Product
Figure 6. Capacitances
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4
BC847ATT1, BC847BTT1, BC847CTT1
ORDERING INFORMATION
Device
†
Marking
1E
Package
Shipping
BC847ATT1
SC−75/SOT−416
SC−75/SOT−416
3,000 / Tape & Reel
BC847BTT1
1F
3,000 / Tape & Reel
BC847BTT1G
1F
SC−75/SOT−416
(Pb−Free)
BC847CTT1
1G
1G
SC−75/SOT−416
3,000 / Tape & Reel
BC847CTT1G
SC−75/SOT−416
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifi-
cations Brochure, BRD8011/D.
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5
BC847ATT1, BC847BTT1, BC847CTT1
PACKAGE DIMENSIONS
SC−75/SOT−416
CASE 463−01
ISSUE C
NOTES:
−A−
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
S
2
MILLIMETERS
DIM MIN MAX
INCHES
MIN MAX
3
G
−B−
A
B
C
D
G
H
J
0.70
1.40
0.60
0.15
0.90 0.028 0.035
1.80 0.055 0.071
0.90 0.024 0.035
0.30 0.006 0.012
1
D 3 PL
0.20 (0.008)
M
B
1.00 BSC
0.039 BSC
−−− 0.004
0.20 (0.008) A
K
−−−
0.10
1.45
0.10
0.10
0.25 0.004 0.010
1.75 0.057 0.069
0.20 0.004 0.008
K
L
S
0.50 BSC
0.020 BSC
J
C
L
H
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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Phone: 81−3−5773−3850
For additional information, please contact your
local Sales Representative.
BC847ATT1/D
相关型号：
BC847BTTR
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, ULTRAMINI-3
CENTRAL
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