BC847BV [SECOS]

Plastic-Encapsulate Transistors; 塑料封装晶体管
BC847BV
型号: BC847BV
厂家: SECOS HALBLEITERTECHNOLOGIE GMBH    SECOS HALBLEITERTECHNOLOGIE GMBH
描述:

Plastic-Encapsulate Transistors
塑料封装晶体管

晶体 晶体管
文件: 总2页 (文件大小:576K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BC847BV  
Dual NPN Transistors  
Elektronische Bauelemente  
Plastic-Encapsulate Transistors  
SOT-563  
RoHS Compliant Product  
FEATURES  
.002(0.05)  
.000(0.00)  
.051(1.30)  
.043(1.10)  
.012(0.30)  
.004(0.10)  
* Epitaxial Die Construction  
Complementary PNP Type Available  
*
(BC857BV)  
.022(0.55)  
.018(0.45)  
.067(1.70)  
.059(1.50)  
Ultra-Small Surface Mount Package  
*
.011(0.27)  
.007(0.17)  
.067(1.70)  
.059(1.50)  
Marking:K4V  
.024(0.60)  
.021(0.525)  
7o REF.  
.006(0.16)  
.004(0.09)  
F
7o RE  
.
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS* TA=25. unless otherwise noted  
Symbol  
VCBO  
Parameter  
Value  
Units  
50  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
VCEO  
VEBO  
IC  
45  
6
V
A
Collector Current -Continuous  
Collector Dissipation  
0.1  
PC  
0.15  
833  
W
oC/W  
oC  
RθJA  
TJ  
Thermal Resistance. Junction to Ambient Air  
Junction Temperature  
150  
oC  
Tstg  
Storage Temperature  
-55-150  
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)  
Parameter  
Symbol  
Test  
conditions  
MIN  
TYP  
MAX  
UNIT  
V
50  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V(BR)CBO IC=10µA,IE=0  
V(BR)CEO IC=10mA,IB=0  
V(BR)EBO IE=1µA,IC=0  
45  
6
V
V
ICBO  
IEBO  
VCB=30V,IE=0  
VEB=5V,IC=0  
15  
nA  
nA  
Emitter cut-off current  
100  
450  
100  
300  
DC current gain  
hFE(1)  
VCE=5V,IC=2mA  
200  
IC=10mA,IB=0.5mA  
IC=100mA,IB=5mA  
IC=10mA,IB=0.5mA  
IC=100mA,IB=5mA  
mV  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Base-emitter voltage  
VCE(sat)  
VBE(sat)  
VBE  
700  
900  
660  
mV  
mV  
V
CE=5V,IC=2mA  
CE=5V,IC=10mA  
580  
100  
700  
770  
V
Transition frequency  
Output capacitance  
fT  
VCE=5V,IC=10mA,f=100MHz  
MHz  
pF  
Cob  
VCB=10V,IE=0,f=1MHz  
VCE=5V,Rs=2k,  
4.5  
Noise Figure  
NF  
10  
dB  
f=1kHz,BW=200Hz  
http://www.SeCoSGmbH.com  
Any changing of specification will not be informed individual  
23-Mar-2007 Rev. A  
Page 1 of 2  
BC847BV  
Dual NPN Transistors  
Elektronische Bauelemente  
Plastic-Encapsulate Transistors  
http://www.SeCoSGmbH.com  
Any changing of specification will not be informed individual  
23-Mar-2007 Rev. A  
Page 2 of 2  

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