BAT54CXV3D [ONSEMI]
Dual Series Schottky Barrier Diodes; 双肖特基势垒二极管
| 型号： | BAT54CXV3D |
| 厂家： | 
ONSEMI |
| 描述： | Dual Series Schottky Barrier Diodes |
| 文件： | 总4页 (文件大小：91K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAT54CXV3T1G
Dual Series Schottky
Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
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Features
30 VOLT
DUAL COMMON CATHODE
SCHOTTKY BARRIER
DIODES
• Extremely Fast Switching Speed
• Low Forward Voltage − 0.35 V (Typ) @ I = 10 mAdc
F
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1
2
ANODE
ANODE
3
MAXIMUM RATINGS (T = 125°C unless otherwise noted)
J
CATHODE
Rating
Reverse Voltage
Symbol
Value
Unit
V
R
30
V
MARKING
DIAGRAM
Forward Power Dissipation
P
F
@ T = 25°C
240
1.9
mW
A
Derate above 25°C
mW/°C
3
SC−89
CASE 463C
STYLE 3
Forward Current (DC)
I
F
200 Max
600
mA
mA
5CM G
G
2
Non−Repetitive Peak Forward
I
FSM
1
1
Current, t < 10 msec
p
Repetitive Peak Forward Current
Pulse Wave = 1 sec, Duty Cycle =
66%
I
300
mA
FRM
5C
M
G
= Device Code
= Date Code
= Pb−Free Package
Junction Temperature
T
J
−55 to 125
−55 to +150
525
°C
°C
(Note: Microdot may be in either location)
Storage Temperature Range
T
stg
Thermal Resistance,
R
°C/W
ꢀ
JA
ORDERING INFORMATION
Junction−to−Ambient (Note 1)
†
Device
BAT54CXV3T1G
Package
Shipping
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 board with minimum mounting pad.
SC−89
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2010
Publication Order Number:
1
August, 2010 − Rev. 2
BAT54CXV3/D
BAT54CXV3T1G
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (EACH DIODE)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
V
(BR)R
30
−
−
V
(I = 10 ꢁ A)
R
Total Capacitance
(V = 1.0 V, f = 1.0 MHz)
R
C
−
−
−
−
−
−
−
−
7.6
0.5
10
2.0
pF
ꢁ Adc
Vdc
Vdc
Vdc
ns
T
Reverse Leakage
(V = 25 V)
R
I
R
Forward Voltage
(I = 0.1 mAdc)
F
V
F
V
F
V
F
0.22
0.41
0.52
−
0.24
0.5
Forward Voltage
(I = 30 mAdc)
F
Forward Voltage
(I = 100 mAdc)
F
0.8
Reverse Recovery Time
t
rr
5.0
(I = I = 10 mAdc, I
= 1.0 mAdc, Figure 1)
F
R
R(REC)
Forward Voltage
(I = 1.0 mAdc)
F
V
0.29
0.35
0.32
0.40
Vdc
Vdc
F
F
Forward Voltage
V
(I = 10 mAdc)
F
820 ꢂ
+10 V
2 k
100 ꢁ H
0.1 ꢁ F
0.1 ꢁ F
I
F
t
r
t
p
T
I
F
t
rr
T
10%
90%
DUT
50 ꢂ OUTPUT
PULSE
GENERATOR
50 ꢂ INPUT
SAMPLING
OSCILLOSCOPE
i
= 1 mA
R(REC)
I
R
V
R
OUTPUT PULSE
INPUT SIGNAL
(I = I = 10 mA; measured
F
R
at i
= 1 mA)
R(REC)
Notes: 1. A 2.0 kꢂ variable resistor adjusted for a Forward Current (I ) of 10 mA.
F
Notes: 2. Input pulse is adjusted so I
is equal to 10 mA.
R(peak)
Notes: 3. t » t
p
rr
Figure 1. Recovery Time Equivalent Test Circuit
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2
BAT54CXV3T1G
100
10
125°C
85°C
150°C
1.0
0.1
25°C
−40°C
−55°C
0.0
0.1
0.2
0.3
0.4
0.5
0.6
V , FORWARD VOLTAGE (VOLTS)
F
Figure 2. Forward Voltage
1000
100
T = 150°C
A
T = 125°C
A
10
1.0
T = 85°C
A
0.1
0.01
T = 25°C
A
0.001
15
25
30
0
5
10
20
V , REVERSE VOLTAGE (VOLTS)
R
Figure 3. Leakage Current
14
12
10
8
6
4
2
0
0
5
10
15
20
25
30
V , REVERSE VOLTAGE (VOLTS)
R
Figure 4. Total Capacitance
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3
BAT54CXV3T1G
PACKAGE DIMENSIONS
SC−89, 3−LEAD
CASE 463C−03
ISSUE C
A
−X−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
3
S
B
−Y−
1
2
4. 463C−01 OBSOLETE, NEW STANDARD 463C−02.
K
MILLIMETERS
DIM MIN NOM MAX
INCHES
MIN NOM MAX
G
A
B
C
D
G
H
J
K
L
M
N
S
1.50
0.75
0.60
0.23
1.60
0.85
0.70
1.70 0.059 0.063 0.067
0.95 0.030 0.034 0.040
0.80 0.024 0.028 0.031
0.33 0.009 0.011 0.013
0.020 BSC
2 PL
3 PL
D
M
0.08 (0.003)
X Y
0.28
0.50 BSC
0.53 REF
0.15
0.40
1.10 REF
−−−
0.021 REF
0.10
0.30
0.20 0.004 0.006 0.008
0.50 0.012 0.016 0.020
0.043 REF
−−−
−−−
1.50
10
10
−−−
−−−
−−−
−−−
10
10
_
_
−−−
1.60
N
_
_
M
1.70 0.059 0.063 0.067
J
C
STYLE 3:
PIN 1. ANODE
2. ANODE
SEATING
PLANE
−T−
3. CATHODE
SOLDERING FOOTPRINT*
0.53
0.020
1.10
0.043
0.53
0.020
0.50
0.020
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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BAT54CXV3/D
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