BAT54CXV3T1 [ONSEMI]
Dual Series Schottky Barrier Diodes; 双肖特基势垒二极管
| 型号： | BAT54CXV3T1 |
| 厂家： | 
ONSEMI |
| 描述： | Dual Series Schottky Barrier Diodes |
| 文件： | 总4页 (文件大小：47K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAT54CXV3T1
Preferred Device
Dual Series Schottky
Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
http://onsemi.com
Features
30 VOLT
DUAL COMMON CATHODE
SCHOTTKY BARRIER
DIODES
• Extremely Fast Switching Speed
• Low Forward Voltage − 0.35 V (Typ) @ I = 10 mAdc
F
• Pb−Free Package is Available
1
2
ANODE
ANODE
MAXIMUM RATINGS (T = 125°C unless otherwise noted)
J
3
Rating
Reverse Voltage
Symbol
Value
Unit
CATHODE
V
30
V
R
Forward Power Dissipation
P
F
MARKING
DIAGRAM
@ T = 25°C
240
1.9
mW
mW/°C
A
Derate above 25°C
Forward Current (DC)
I
200 Max
−55 to 125
−55 to +150
525
mA
°C
F
Junction Temperature
T
3
J
SC−89
CASE 463C
STYLE 3
5CM G
Storage Temperature Range
T
stg
°C
G
2
1
1
Thermal Resistance,
R
ꢀ
°C/W
JA
Junction−to−Ambient (Note 1)
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
5C
M
G
= Device Code
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
1. FR−5 board with minimum mounting pad.
ORDERING INFORMATION
†
Device
Package
Shipping
BAT54CXV3T1
SC−89
3000 / Tape & Reel
3000 / Tape & Reel
BAT54CXV3T1G
SC−89
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2005
Publication Order Number:
1
October, 2005 − Rev. 1
BAT54CXV3/D
BAT54CXV3T1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (EACH DIODE)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
V
30
−
−
V
(BR)R
(I = 10 ꢁ A)
R
Total Capacitance
(V = 1.0 V, f = 1.0 MHz)
R
C
−
−
−
−
−
−
−
−
7.6
0.5
10
2.0
pF
ꢁ Adc
Vdc
Vdc
Vdc
ns
T
Reverse Leakage
(V = 25 V)
R
I
R
Forward Voltage
(I = 0.1 mAdc)
F
V
V
V
0.22
0.41
0.52
−
0.24
0.5
F
F
F
Forward Voltage
(I = 30 mAdc)
F
Forward Voltage
(I = 100 mAdc)
F
0.8
Reverse Recovery Time
t
5.0
rr
(I = I = 10 mAdc, I = 1.0 mAdc, Figure 1)
R(REC)
F
R
Forward Voltage
(I = 1.0 mAdc)
F
V
V
0.29
0.35
0.32
0.40
Vdc
Vdc
F
F
Forward Voltage
(I = 10 mAdc)
F
Forward Current (DC)
I
−
−
−
−
−
−
200
300
600
mAdc
mAdc
mAdc
F
Repetitive Peak Forward Current
I
I
FRM
FSM
Non−Repetitive Peak Forward Current
(t < 1.0 s)
820 ꢂ
+10 V
2 k
0.1 ꢁ F
I
F
t
t
T
r
p
I
F
100 ꢁ H
t
T
10%
90%
rr
0.1 ꢁ F
DUT
50 ꢂ OUTPUT
50 ꢂ INPUT
SAMPLING
OSCILLOSCOPE
i = 1 mA
R(REC)
PULSE
I
R
GENERATOR
V
R
OUTPUT PULSE
(I = I = 10 mA; measured
INPUT SIGNAL
F
R
at i
= 1 mA)
R(REC)
Notes: 1. A 2.0 kꢂ variable resistor adjusted for a Forward Current (I ) of 10 mA.
F
Notes: 2. Input pulse is adjusted so I
is equal to 10 mA.
R(peak)
Notes: 3. t » t
p
rr
Figure 1. Recovery Time Equivalent Test Circuit
http://onsemi.com
2
BAT54CXV3T1
100
10
125°C
85°C
150°C
1.0
0.1
25°C
−40°C
−55°C
0.0
0.1
0.2
0.3
0.4
0.5
0.6
V , FORWARD VOLTAGE (VOLTS)
F
Figure 2. Forward Voltage
1000
100
T = 150°C
A
T = 125°C
A
10
1.0
T = 85°C
A
0.1
0.01
T = 25°C
A
0.001
15
25
30
0
5
10
20
V , REVERSE VOLTAGE (VOLTS)
R
Figure 3. Leakage Current
14
12
10
8
6
4
2
0
0
5
10
15
20
25
30
V , REVERSE VOLTAGE (VOLTS)
R
Figure 4. Total Capacitance
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3
BAT54CXV3T1
PACKAGE DIMENSIONS
SC−89, 3−LEAD
CASE 463C−03
ISSUE C
A
−X−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
3
S
B
−Y−
1
2
4. 463C−01 OBSOLETE, NEW STANDARD 463C−02.
K
MILLIMETERS
DIM MIN NOM MAX
INCHES
MIN NOM MAX
G
2 PL
A
B
C
D
G
H
J
K
L
M
N
S
1.50
0.75
0.60
0.23
1.60
0.85
0.70
1.70 0.059 0.063 0.067
0.95 0.030 0.034 0.040
0.80 0.024 0.028 0.031
0.33 0.009 0.011 0.013
0.020 BSC
D
3 PL
M
0.08 (0.003)
X Y
0.28
0.50 BSC
0.53 REF
0.15
0.40
1.10 REF
−−−
0.021 REF
0.10
0.30
0.20 0.004 0.006 0.008
0.50 0.012 0.016 0.020
0.043 REF
−−−
−−−
1.50
10
10
−−−
−−−
−−−
−−−
10
10
_
_
_
_
−−−
1.60
N
M
1.70 0.059 0.063 0.067
J
C
STYLE 3:
PIN 1. ANODE
2. ANODE
SEATING
PLANE
−T−
3. CATHODE
SOLDERING FOOTPRINT*
0.53
0.020
1.10
0.043
0.53
0.020
0.50
0.020
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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BAT54CXV3/D
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