BAS16TT1_04 [ONSEMI]
Silicon Switching Diode; 硅开关二极管型号: | BAS16TT1_04 |
厂家: | ONSEMI |
描述: | Silicon Switching Diode |
文件: | 总6页 (文件大小:64K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BAS16TT1
Preferred Device
Silicon Switching Diode
Features
• Pb−Free Package is Available*
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MAXIMUM RATINGS (T = 25°C)
A
3
1
Rating
Symbol
Max
75
Unit
V
CATHODE
ANODE
Continuous Reverse Voltage
Recurrent Peak Forward Current
V
R
I
F
200
500
mA
mA
Peak Forward Surge Current
I
FM(surge)
Pulse Width = 10 ms
THERMAL CHARACTERISTICS
Characteristic
3
CASE 463
SOT−416
STYLE 2
Symbol
Max
Unit
2
Total Device Dissipation,
FR−4 Board (Note 1)
P
D
1
225
mW
T = 25°C
A
Derated above 25°C
1.8
mW/°C
°C/W
Thermal Resistance,
R
555
q
JA
MARKING DIAGRAM
Junction−to−Ambient (Note 1)
Total Device Dissipation,
FR−4 Board (Note 2)
T = 25°C
A
P
D
360
mW
A6
Derated above 25°C
2.9
mW/°C
°C/W
Thermal Resistance,
R
345
q
JA
Junction−to−Ambient (Note 2)
Junction and Storage
Temperature Range
T , T
−55 to
+150
°C
J
stg
ORDERING INFORMATION
1. FR−4 @ Minimum Pad
†
2. FR−4 @ 1.0 × 1.0 Inch Pad
Device
Package
Shipping
BAS16TT1
SOT−416
3000 / Tape & Reel
3000 / Tape & Reel
BAS16TT1G
SOT−416
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
Preferred devices are recommended choices for future use
and best overall value.
Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
May, 2004 − Rev. 2
BAS16TT1/D
BAS16TT1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
Forward Voltage
V
F
mV
(I = 1.0 mA)
−
−
−
−
715
866
1000
1250
F
(I = 10 mA)
F
(I = 50 mA)
F
(I = 150 mA)
F
Reverse Current
I
R
mA
(V = 75 V)
−
−
−
1.0
50
30
R
(V = 75 V, T = 150°C)
R
J
(V = 25 V, T = 150°C)
R
J
Capacitance
(V = 0, f = 1.0 MHz)
R
C
−
−
−
−
2.0
6.0
45
pF
ns
PC
V
D
Reverse Recovery Time
t
rr
(I = I = 10 mA, R = 50 W) (Figure 1)
F
R
L
Stored Charge
(I = 10 mA to V = 6.0 V, R = 500 W) (Figure 2)
QS
F
R
L
Forward Recovery Voltage
(I = 10 mA, t = 20 ns) (Figure 3)
V
FR
1.75
F
r
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2
BAS16TT1
1 ns MAX
DUT
500 W
t
t
rr
10%
t
if
50 W
DUTY CYCLE = 2%
90%
V
F
I
rr
100 ns
Figure 1. Reverse Recovery Time Equivalent Test Circuit
OSCILLOSCOPE
R . 10 MW
C 3 7 pF
DUT
BAW62
243 pF
V
C
500 W
V
CM
20 ns MAX
D1
100 KW
t
10%
Qa
C
V
CM
+
DUTY CYCLE = 2%
t
90%
V
f
400 ns
Figure 2. Stored Charge Equivalent Test Circuit
V
120 ns
1 KW
450 W
V
90%
DUT
50 W
V
fr
t
10%
DUTY CYCLE = 2%
2 ns MAX
Figure 3. Forward Recovery Voltage Equivalent Test Circuit
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3
BAS16TT1
10
100
10
T = 150°C
A
T = 125°C
A
1.0
T = 85°C
A
T = 85°C
A
0.1
0.01
T = 25°C
A
T = 55°C
1.0
0.1
A
T = −ꢀ40°C
A
T = 25°C
A
0.001
50
0.2
0.4
0.6
0.8
1.0
1.2
0
10
20
30
40
V , FORWARD VOLTAGE (VOLTS)
F
V , REVERSE VOLTAGE (VOLTS)
R
Figure 4. Forward Voltage
Figure 5. Leakage Current
0.68
0.64
0.60
0.56
0.52
0
2
4
6
8
V , REVERSE VOLTAGE (VOLTS)
R
Figure 6. Capacitance
1.0
0.1
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
t, TIME (s)
1.0
10
100
1000
Figure 7. Normalized Thermal Response
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4
BAS16TT1
PACKAGE DIMENSIONS
SC−416/SC−90/SOT−75
CASE 463−01
ISSUE C
NOTES:
−A−
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
S
2. CONTROLLING DIMENSION: MILLIMETER.
2
MILLIMETERS
DIM MIN MAX
INCHES
MIN MAX
3
G
−B−
A
B
C
D
G
H
J
0.70
1.40
0.60
0.15
0.90 0.028 0.035
1.80 0.055 0.071
0.90 0.024 0.035
0.30 0.006 0.012
1
D 3 PL
0.20 (0.008)
M
B
1.00 BSC
0.039 BSC
−−− 0.004
0.20 (0.008) A
K
−−−
0.10
1.45
0.10
0.10
0.25 0.004 0.010
1.75 0.057 0.069
0.20 0.004 0.008
K
L
S
0.50 BSC
0.020 BSC
J
STYLE 2:
PIN 1. ANODE
2. N/C
C
3. CATHODE
L
H
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5
BAS16TT1
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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Phone: 81−3−5773−3850
For additional information, please contact your
local Sales Representative.
BAS16TT1/D
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